BC856CW-G

Small Signal Transistor
BC856AW-G Thru. BC858CW-G (PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
-Power dissipation
PCM: 0.15W (@TA=25°C)
-Collector current
ICM: -0.1A
-Collector-base voltage
VCBO: BC856W= -80V
BC857W= -50V
BC858W= -30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C
SOT-323
0.087 (2.20)
0.079 (2.00)
3
0.053(1.35)
0.045(1.15)
1
2
0.006 (0.15)
0.003 (0.08)
0.055 (1.40)
0.047 (1.20)
0.096 (2.45)
0.085 (2.15)
0.039 (1.00)
0.035 (0.90)
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
0.004 (0.10) max
0.016 (0.40)
0.008 (0.20)
0.018 (0.46)
0.010 (0.26)
Circuit diagram
3
-1.BASE
-2.EMITTER
-3.COLLECTOR
1
Dimensions in inches and (millimeter)
2
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base Voltage
BC856W-G
BC857W-G
BC858W-G
VCBO
-80
-50
-30
V
Collector-Emitter Voltage
BC856W-G
BC857W-G
BC858W-G
VCEO
-65
-45
-30
V
VEBO
-5
V
Collector Current -Continuous
IC
-0.1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
TSTG
-65 to +150
Emitter-Base Voltage
Storage Temperature Range
Company reserves the right to improve product design , functions and reliability without notice.
O
C
O
C
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Page 1
QW-BTR36
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics (TA= 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
MIN
MAX
Units
BC856W-G
BC857W-G
BC858W-G
VCBO
IC = -10μA , IE=0
-80
-50
-30
V
BC856W-G
BC857W-G
BC858W-G
VCEO
IC = -10mA , IB=0
-65
-45
-30
V
Emitter-Base Breakdown Voltage
VEBO
IE = -1μA , IC=0
-5
V
Collector Cut-off Current
ICBO
VCB= -30V , IE=0
hFE
VCE = -5V , IC= -2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC =-100mA , IB=-5mA
-0.65
V
Base-Emitter Saturation Voltage
VBE(sat)
IC =-100mA , IB=-5mA
-1.1
V
Transition Frequency
fT
VCE=-5V , IC=-10mA
f=100MHZ
Collector Capacitance
Cob
VCB =-10V , f=1MHZ
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
BC856AW,857AW,858AW
BC856BW,857BW,858BW
BC857CW,858CW
Company reserves the right to improve product design , functions and reliability without notice.
-15
125
220
420
nA
250
475
800
100
MHZ
4.5
pF
REV:B
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QW-BTR36
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
Fig.1- DC current gain as a function fo
collector current ;typical values.
Fig.2- Base-Emitter Voltage as a function
of collector current;typical values
-1200
500
BC857AW;VCE= -5V
-1000
400
-800
hFE
VBE (mV)
Tamb=150°C
300
°C
=-55
Tamb
-600
b=2
Tam
5°C
200
-400
Tamb=25°C
b=1
Tam
100
C
50 °
-200
Tamb=-55°C
BC857AW;VCE= -5V
0
-10-2
-10-1
-10
-1
-102
0
-10-2
3
-10
-10-1
-102
3
-10
IC (mA)
IC (mA)
Fig.3- Collector-emitter saturation voltage
as a function of collector current;
typical values.
-104
-10
-1
Fig.4- Base-emitter saturation voltage
as a function of collector current;
typical values
-1200
BC857AW;IC/IB= 20
-1000
-103
VBEsat (mV)
VCEsat (mV)
Tamb=150°C
°C
=-55
-800
Tamb
°C
=150
Tamb
-400
-102
C
=25°
Tamb
-600
-200
Tamb=25°C
BC857AW;IC/IB= 20
Tamb=-55°C
-10
-10-1
2
-10
-1
0
-10-1
3
-10
-10
2
-10
-1
IC (mA)
-10
3
-10
IC (mA)
Fig.5- DC current gain as a function fo
collector current ;typical values.
Fig.6- Base-emitter voltage as a function
of collector current;typical values.
-1200
1000
BC857BW;VCE= -5V
-1000
800
Tamb=150°C
VBE (mV)
-800
hFE
600
°C
=-55
Tamb
-600
b
Tam
°C
=2 5
400
Tamb=25°C
-400
Tam
200
b=1
C
5 0°
-200
Tamb=-55°C
0
-10-2
-10-1
-1
BC857BW;VCE=-5V
-10
-102
3
-10
0
-10-2
-10-1
-1
-10
-102
3
-10
IC (mA)
IC (mA)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 3
QW-BTR36
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
Fig.7- Collector-ernitter saturation voltage
as a function of collector current
typical values.
-104
Fig.8- Base-Emitter Saturation Voltage as
a function of collector current;typical
values
-1200
BC857BW;IC/IB= 20
-1000
-103
VBEsat (mV)
VCEsat (mV)
Tamb=150°C
°C
=-55
-800
Tamb
C
=25°
Tamb
-600
°C
=150
Tamb
-400
-102
-200
Tamb=25°C
BC857BW;IC/IB= 20
Tamb=-55°C
-10
-10-1
-1
2
-10
0
-10-1
3
-10
-10
2
-10
-1
3
-10
-10
IC (mA)
IC (mA)
Fig.9- DC current gain as a function fo
collector current ;typical values.
Fig.10- Base-Emitter Voltage as a function
of collector current;typical values
-1200
1000
BC857CW;VCE= -5V
-1000
Tam
b
800
=150
°C
-800
°C
=-55
Tamb
VBE (mV)
hFE
600
-600
b
Tam
°C
=25
400
-400
Tamb=25°C
b =1
Tam
Tamb=-55°C
200
C
5 0°
-200
BC857CW;VCE= -5V
0
-10-2
-10-1
-102
-10
-1
0
-10-2
3
-10
-10-1
-102
3
-10
IC (mA)
IC (mA)
Fig.11- Collector-ernitter saturation voltage
as a function of collector current;
typical values.
-104
-10
-1
Fig.12- Base-Emitter Saturation Voltage as
a function of collector current;typical
values
-1200
BC857CW;IC/IB= 20
-1000
-103
Tamb=150°C
VBEsat (mV)
VCEsat (mV)
-102
Tamb=25°C
°C
=-55
-800
Tamb
C
=25°
Tamb
-600
°C
=150
Tamb
-400
-200
Tamb=-55°C
-10
-10-1
-1
-10
BC857CW;IC/IB= 20
2
-10
3
-10
0
-10-1
IC (mA)
-1
-10
2
-10
3
-10
IC (mA)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 4
QW-BTR36
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-323
SOT-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25 ± 0.10
2.55 ± 0.10
1.19 ± 0.10
1.55 + 0.10
178 ± 1.00
54.40 ± 0.40
13.0 ± 0.20
(inch)
0.089 ± 0.004
0.100 ± 0.004
0.047 ± 0.004
0.061 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138± 0.002
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004
0.315 + 0.012 /–0.004
0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 5
QW-BTR36
Comchip Technology CO., LTD.
Small Signal Transistor
Marking Code
3
Marking Code
Part Number
BC856AW-G
3A
BC857AW-G
3E
BC858AW-G
3J
BC856BW-G
3B
BC857BW-G
3F
BC858BW-G
3K
BC857CW-G
3G
BC858CW-G
3L
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-323
A
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.30
0.051
C
1.94
0.076
D
2.74
0.108
C
D
B
Standard Packaging
REEL PACK
Case Type
SOT-323
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 6
QW-BTR36
Comchip Technology CO., LTD.
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