CJ2301-HF

Comchip
MOSFET
SMD Diode Specialist
CJ2301-HF
P-Channel
RoHS Device
Halogen Free
SOT-23
RDS(on)MAX
V(BR)DSS
0.118(3.00)
0.110(2.80)
ID
D
112mΩ @ -4.5V
-20V
0.055(1.40)
0.047(1.20)
-2.3A
142mΩ @ -2.5V
G
S
0.079(2.00)
0.071(1.80)
Features
0.006(0.15)
0.003(0.08)
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
- P-Channel 20-V(D-S) MOSFET
- Trench FET Power MOSFET.
- Load Switch for Portable Devices.
- DC/DC Converter.
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Mechanical data
Circuit diagram
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- G : Gate
- S : Source
- D : Drain
- Weight: 0.008 grams(approx.).
D
G
S
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Symbol
Value
Units
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGS
±8
V
ID
-2.3
IDM
-10
Continuous source-drain diode current
IS
-0.72
Maximum power dissipation
PD
400
mW
RΘJA
312.5
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
Continuous drain current
Pulsed drain current
Thermal resistance from junction to ambient (t<5s)
A
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
V(BR) DSS
VGS =0V , ID=-250µA
-20
VGS(th)
VDS =VGS , ID=-250µA
-0.4
V
Gate-source threshold voltage
-1
Gate-source leakage
IGSS
VDS =0V , VGS=±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-20V , VGS=0V
-1
µA
Drain-source on-state
resistance (Note a)
Forward transconductance (Note a)
VGS=-4.5V , ID=-2.8A
0.090
0.112
VGS=-2.5V , ID=-2.0A
0.110
0.142
RDS(on)
gfs
Ω
VDS=-5V , ID=-2.8A
6.5
S
Dynamic (Note b)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
405
VDS=-10V , VGS=0V, f=1MHZ
55
VDS=-10V , VGS=-4.5V,ID=-3A
Gate-soutce charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
VDS=-10V , VGS=-2.5V,ID=-3A
5.5
10
3.3
6
nC
0.7
1.3
f=1MHz
td(on)
tr
pF
75
VDD=-10V ,
6.0
Ω
11
20
35
60
30
50
10
20
RL=10Ω , ID=-1A
Turn-off delay time
Fall time
td(off)
VGEN=-4.5V Rg=1Ω
tf
nS
Drain-source body diode characteristics
Continuous souce-drain diode current
IS
Pulse diode forward current (Note a)
ISM
Body diode voltage
VSD
-1.3
TC=25°C
-10
IS=-0.7A
-0.8
-1.2
A
V
Notes:
a. Pulse test: Pulse width <300µs, Duty cycle < 2%
b. Guaranteed by design, not subject to production testing.
Company reserves the right to improve product design , functions and reliability without notice.
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MOSFET
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES ( CJ2301-HF )
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-10
-10
Ta=25°C
VGS=-4.5V,-3.5V,-2.5V
Ta=25°C
Pulsed
Pulsed
-8
VGS=-2.0V
Drain Current, ID (A)
Drain Current, ID (A)
-8
-6
-4
VGS=-1.5V
-2
-6
-4
-2
VGS=-1.0V
-0
-0
-0
-1
-3
-2
-0
-4
-0.5
-1.0
-1.5
-2.0
Gate to Source Voltage, VGS (V)
Drain to Soruce Voltage, VDS (A)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
150
250
Ta=25°C
Pulsed
Ta=25°C
ON-Resistance, RDS(ON) ( mΩ )
Pulsed
ON-Resistance, RDS(ON) ( mΩ )
-2.5
120
VGS=-2.5V
90
VGS=-4.5V
60
30
0
200
150
100
ID=-2.8A
50
0
-2
-0
-4
-6
-8
-10
-0
Drain Current, ID (A)
-2
-4
-6
-8
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
-10
Ta=25°C
Source Current, Is ( A)
Pulsed
-1
-0.1
-0.01
-1E-3
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Source to Drain Voltage, VSD (V)
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
Reel Taping Specification
P1
F
E
d
P0
B
XX
12
o
0
D2
D1 D
W1
Trailer Tape
50±2 Empty Pockets
SOT-23
SOT-23
Leader Tape
100±2 Empty Pockets
Components
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 / - 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 / - 0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
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Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
Marking Code
3
Part Number
Marking Code
CJ2301-HF
S1
XX
1
2
xx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.60
0.024
C
1.90
0.075
D
2.02
0.080
E
2.82
0.111
A
D
E
C
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
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Comchip Technology CO., LTD.
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