DMN3024LSD

A Product Line of
Diodes Incorporated
DMN3024LSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
24mΩ @ VGS= 10V
7.2A
36mΩ @ VGS= 4.5V
5.8A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
30V
Mechanical Data
•
Case: SO-8
Description and Applications
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
•
Motor control
•
Backlighting
•
DC-DC Converters
•
Power management functions
S1
D1
G1
D1
S2
D2
G2
D2
TOP VIEW
Ordering Information
Product
DMN3024LSD-13
Note:
D1
G1
D2
G2
S1
S2
Top view
(Note 1)
Marking
N3024LD
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N3024LD
YY WW
DMN3024LSD
Document Revision: 3
N3024LD = Product Type Marking Code
= Manufacturer’s Marking
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
(Notes 3 & 5)
TA = 70°C (Notes 3 & 5)
Continuous Drain current
VGS = 10V
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 4 & 5)
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
(Notes 3 & 5)
Pulsed Source current (Body diode)
(Notes 4 & 5)
ID
IDM
IS
ISM
Value
30
±20
7.2
5.8
5.7
6.8
34
3.3
34
Unit
V
V
Value
1.3
10.0
1.8
14.3
2.0
15.9
100
70
63
53
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 2 & 5)
Power dissipation
Linear derating factor
(Notes 2 & 6)
PD
(Notes 3 & 5)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
(Notes 5 & 7)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C/W
°C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
DMN3024LSD
Document Revision: 3
2 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Thermal Characteristics
ID Drain Current (A)
RDS(on) Limited
10
1
DC
100m
1s
100ms
10m
1m
100m
10ms
Single Pulse
Tamb=25°C
1ms
100µs
One active die
1
10
VDS Drain-Source Voltage (V)
Max Power Dissipation (W)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
110
Tamb=25°C
100
One active die
90
80
70
D=0.5
60
50
40
Single Pulse
D=0.2
30
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Maximum Power (W)
Thermal Resistance (°C/W)
80
100 120 140 160
Derating Curve
Single Pulse
Tamb=25°C
100
One active die
10
1
100µ
Pulse Width (s)
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Revision: 3
60
Temperature (°C)
Safe Operating Area
DMN3024LSD
40
3 of 8
www.diodes.com
Pulse Power Dissipation
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
ID = 250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS= 30V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
3.0
V
ID= 250μA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
0.024
VGS= 10V, ID= 7.0A
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 8 & 9)
gfs
⎯
16.5
⎯
S
VDS= 15V, ID= 7.1A
Diode Forward Voltage (Note 8)
VSD
⎯
0.82
1.2
V
IS= 1.7A, VGS= 0V
Reverse recovery time (Note 9)
trr
12
⎯
ns
Reverse recovery charge (Note 9)
Qrr
⎯
4.8
⎯
nC
Input Capacitance
Ciss
⎯
608
⎯
pF
Output Capacitance
Coss
⎯
132
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
71
⎯
pF
Total Gate Charge
Qg
⎯
6.3
⎯
nC
Static Drain-Source On-Resistance (Note 8)
0.036
Ω
VGS= 4.5V, ID= 6.0A
IS= 2.2A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
⎯
12.9
⎯
nC
Gate-Source Charge
Qgs
⎯
2.5
⎯
nC
Gate-Drain Charge
Qgd
⎯
2.5
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
2.9
⎯
ns
Turn-On Rise Time (Note 10)
tr
⎯
3.3
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
16
⎯
ns
tf
⎯
8
⎯
ns
Turn-Off Fall Time (Note 10)
Notes:
VDS= 15V, VGS= 0V
f= 1MHz
VDS= 15V, VGS= 4.5V
ID= 7A
VDS= 15V, VGS= 10V
ID= 7A
VDD= 15V, VGS= 10V
ID= 1A, RG ≅ 6.0Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN3024LSD
Document Revision: 3
4 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Typical Characteristics
5V
ID Drain Current (A)
T = 150°C
4V
3.5V
3V
1
0.1
2.5V
VGS
T = 25°C
10V
VGS
4V
3.5V
10
ID Drain Current (A)
10V
10
3V
2.5V
1
2V
0.1
1.5V
0.01
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
ID Drain Current (A)
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2
3
4
VGS Gate-Source Voltage (V)
DMN3024LSD
Document Revision: 3
1000
2.5V
VGS
T = 25°C
100
3V
10
3.5V
1
4V
0.1
0.01
0.01
4.5V
10V
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
VGS = 10V
1.4
ID = 7A
RDS(on)
1.2
1.0
0.8
VGS(th)
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (W)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1.6
10
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = -3V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Typical Characteristics - continued
VGS = 0V
C Capacitance (pF)
800
f = 1MHz
700
600
CISS
500
COSS
400
CRSS
300
200
100
0
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
900
10
9
8
7
6
5
4
3
2
1
0
ID = 7A
VDS = 15V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN3024LSD
Document Revision: 3
Switching time test circuit
6 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
h x 45°
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
DMN3024LSD
Document Revision: 3
7 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN3024LSD
Document Revision: 3
8 of 8
www.diodes.com
July 2009
© Diodes Incorporated
Similar pages