AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications). n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 38mΩ (VGS = -10V) < 60mΩ (VGS = -4.5V) D2 D2 D2 D1 D1 D1 G2 SOIC-8 G1 S2 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 7.2 TA=25°C F Current TA=70°C 6.2 ID B Pulsed Drain Current IDM 30 TA=25°C F Power Dissipation TA=70°C Avalanche Current B B Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 2 1.44 17 43 A mJ -55 to 150 -55 to 150 °C IAR Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead -5.3 -4.5 -30 Units V 2 1.44 13 25 PD EAR TJ, TSTG Max p-channel -30 ±20 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 50 80 32 50 80 32 W Max 62.5 100 40 62.5 100 40 Units °C/W °C/W °C/W °C/W °C/W °C/W www.aosmd.com AO4620 N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.2A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 3 V A 24 VGS=4.5V, ID=5A 29 36 VDS=5V, ID=7.2A 24 DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 32 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.6 0.77 660 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=7.2A µA 100 20 Forward Transconductance Reverse Transfer Capacitance 5 26 TJ=125°C VSD Crss V TJ=55°C gFS Units 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS IS Typ mΩ mΩ S 1 V 2.5 A 792 pF 110 pF 87 pF 0.8 1.5 Ω 11.3 14.125 nC 5.7 nC 2.1 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω 3.1 ns 15.1 ns 2.7 trr Body Diode Reverse Recovery Time IF=7.2A, dI/dt=100A/µs 15.5 Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 7.1 ns 20 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating. Rev 1:Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V VDS=5V 25 16 4.5V 6V 12 4V ID(A) ID (A) 20 15 8 10 125°C 3.5V 4 5 25°C VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 35 4 4.5 1.6 VGS=10V Normalized On-Resistance VGS=4.5V 30 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics ID=7.2A 1.4 VGS=10V, VDS=15V, ID=7.4A 25 VGS=4.5V 1.2 ID=5A 1 VGS =10V V =15V, R =2.0Ω, VGS =10V, RGEN=3Ω DS L 20 15 0 5 10 IF=7.4A, dI/dt=100A/µs 15 0.8 0.6 20 IF=7.4A, dI/dt=100A/µs -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=7.2A 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ) 50 125°C 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=7.2A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 2 200 0 0 0 2 4 6 8 10 12 Crss 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 30 10µs 0.1s 10ms 10s TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 Power (W) ID (Amps) 1ms RDS(ON) limited DC ZθJA Normalized Transient Thermal Resistance 20 15 10 5 1 VDS (Volts) 10 0 0.001 100 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=100°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 25 100µs 10.0 1.0 30 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4620 P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5.3A 15 Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -0.77 980 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz ±100 nA -3 V 38 42 VDS=-5V, ID=-5.3A DYNAMIC PARAMETERS Ciss Input Capacitance µA A 48 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss -2 VGS=-4.5V, I D=-4.5A Forward Transconductance Coss -5 31 TJ=125°C VSD Units V TJ=55°C gFS Max -1 VDS=-30V, VGS=0V IDSS IS Typ 60 mΩ mΩ S -1 V -2.5 A 1225 pF 150 pF 115 pF 2.2 3.3 Ω 18.7 24 nC 9.6 nC 3.2 nC Gate Drain Charge 4.8 nC Turn-On DelayTime 7.7 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, ID=-5.3A VGS=-10V, VDS=-15V, RL=2.8Ω, RGEN=3Ω 6 ns 20 ns 7 trr Body Diode Reverse Recovery Time IF=-5.3A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/µs 13 ns 26 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating. Rev1:Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -4.5V -10V -4V -6V 20 15 -ID(A) 20 -ID (A) VDS=-5V 25 25 -3.5V 15 10 10 VGS=-3V 5 125°C 5 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 60 2.00 Normalized On-Resistance VGS=-4.5V RDS(ON) (mΩ) 50 40 30 VGS=-10V 20 10 0 5 10 15 20 25 1.80 VGS=-4.5V 1.60 ID=-5.6A 1.20 1.00 0.80 -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 1.0E+00 ID=-5.6A 60 1.0E-01 125°C 50 125°C -IS (A) RDS(ON) (mΩ) VGS=-10V 1.40 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 ID=-4.5A 40 30 25°C 20 1.0E-02 1.0E-03 1.0E-04 25°C 10 1.0E-05 0 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-5.6A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss Crss 250 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 30 10µs RDS(ON) limited 0.1s 1m 1.0 10s 10ms TJ(Max)=150°C TA=25°C 20 15 10 DC 0.1 5 TJ(Max)=150°C TA=25°C 0.0 0.01 Power (W) ID (Amps) 25 100µs 10.0 0 0.001 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000