AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) < 55mΩ (VGS = -4.5V) 100% UIS tested 100% Rg tested SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 8 7 6 5 D1 D2 D2 D1 D1 G2 G1 S2 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current F TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Avalanche Current F B Junction and Storage Temperature Range ±20 ±20 Units V V -5.3 6.2 -4.5 IDM 64 -40 2 2 1.44 1.44 9 17 A 12 43 mJ -55 to 150 -55 to 150 °C EAR TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -30 7.2 IAR B p-channel ID PD TA=70°C Repetitive avalanche energy 0.3mH S1 Symbol RθJA RθJL RθJA RθJL A W Device n-ch n-ch n-ch Typ 50 80 32 Max 62.5 100 40 Units °C/W °C/W °C/W p-ch p-ch p-ch 50 80 32 62.5 100 40 °C/W °C/W °C/W www.aosmd.com AO4620 N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V Typ Max Units 30 V 1 VDS=30V, VGS=0V TJ=55°C 5 VDS=0V, VGS= ±20V 100 nA 2.6 V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 1 V IS Maximum Body-Diode Continuous Current 2.5 A ISM Pulsed Body-Diode CurrentB 64 A 448 pF VGS=10V, ID=7.2A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 17.7 24 25 32 VGS=4.5V, ID=5A 24.8 36 VDS=5V, ID=7.2A 20 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss 2.1 µA 0.74 373 VGS=0V, VDS=15V, f=1MHz mΩ S 67 pF 41 pF Ω 1.8 2.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.2 11 Qg(4.5V) Total Gate Charge 3.5 nC 1.3 nC 1.7 nC 4.5 ns 2.7 ns 14.9 ns 2.9 ns Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz mΩ VGS=10V, VDS=15V, ID=7.2A VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7.2A, dI/dt=100A/µs 10.5 Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 4.5 Body Diode Reverse Recovery Time 12.6 nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating. Rev 8: May 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 5V 10V VDS=5V 6V 50 12 40 6V 9 4.5V ID(A) ID (A) VDS=5V 30 6 20 VGS=3.5V 10 0 25° 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 45 Normalized On-Resistance 1.8 40 VGS=4.5V 35 RDS(ON) (mΩ Ω) 25°C 125°C 125°C 3 VGS=4.5V 30 25 VGS=10V VGS=10V 20 15 10 1.6 VGS=10V Id=7.7A 1.4 1.2 1 VGS=4.5V Id=5A 0.8 0.6 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7.2A ID=7.7A 1.0E+00 1.0E-01 40 125°C 125° IS (A) RDS(ON) (mΩ Ω) 50 125°C 1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDSV=15V DS=15V ID=7.2A ID=7.7A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 Coss 200 Coss 100 0 Crss Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 100µs 0.1 TJ(Max)=150°C TA=25°C 25 RDS(ON) limited 10.0 20 15 10 0.1s DC 5 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4620 P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 Typ Max Units V -1 VDS=-30V, VGS=0V TJ=55°C -5 VDS=0V, VGS=±20V ±100 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.5A 33 gFS Forward Transconductance VDS=-5V, ID=-5.3A 19 IS=-1A,VGS=0V VGS=-10V, ID=-5.3A -1.85 nA V A 23 TJ=125°C -2.4 µA 32 31.5 mΩ S VSD Diode Forward Voltage -1 V IS Maximum Body-Diode Continuous Current -3.5 A ISM Pulsed Body-Diode CurrentB -40 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz -0.8 55 mΩ 760 pF 140 pF 95 pF 3.2 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 13.6 16 nC Qg(4.5V) Total Gate Charge (4.5V) 6.7 nC 2.5 nC 3.2 nC 8 ns 6 ns Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-5.3A VGS=-10V, VDS=-15V, RL=2.8Ω, RGEN=3Ω 17 ns 5 ns IF=-5.3A, dI/dt=100A/µs 15 Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/µs 9.7 ns nC Body Diode Reverse Recovery Time 1in 2 A: The value of R θJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev8: May 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 -10V 35 -6V -5V VDS=-5V -4.5V 25 30 -4V 20 -ID(A) -ID (A) 25 20 15 -3.5V 15 10 125°C 10 25°C 5 VGS=-3V 5 0 0 0 1 2 3 4 5 1 -VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ Ω) Normalized On-Resistance VGS=-4.5V 35 30 25 VGS=-10V 20 VGS=-10V 15 10 3 3.5 4 4.5 5 VGS=-10V ID=-5.3A 1.6 ID=-4.5A 1.4 ID=-5.6A VGS=-4.5V ID=-4.5A 1.2 1 0.8 0 5 10 15 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 1.0E+02 ID=-5.6A ID=-5.3A 60 1.0E+01 125°C 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 2.5 1.8 45 40 2 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-4.5V 50 1.5 40 25°C 20 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5.3A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 Coss 2 200 Crss 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 14 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 30 10µs RDS(ON) limited 0.1s 1ms 1.0 10s 10ms Power (W) ID (Amps) 25 100µs 10.0 TJ(Max)=150°C TA=25°C 20 15 10 DC 0.1 5 TJ(Max)=150°C TA=25°C 0 0.0 0.001 0.01 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width 0.1 (s) 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000