BSZ100N06NS Data Sheet (692 KB, EN)

Type
BSZ100N06NS
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
VDS
60
V
RDS(on),max
10
mW
ID
40
A
QOSS
14
nC
QG(0V..10V)
12
nC
• Pb-free lead plating; RoHS compliant
PG-TSDSON-8
(Fused Leads)
• Halogen-free according to IEC61249-2-21
Type
BSZ100N06NS
Package
Marking
PG-TSDSON-8 (Fused Leads)
100N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
40
V GS=10 V, T C=100 °C
29
V GS=10 V, T C=25 °C,
R thJA =60K/W 2)
11
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
160
Avalanche energy, single pulse4)
E AS
I D=20 A, R GS=25 W
19
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev.2.0
page 1
2013-10-17
BSZ100N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
36
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.1
R thJA=60 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
-
-
3.5
Device on PCB
R thJA
6 cm2 cooling area2)
-
-
60
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=14 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=20 A
-
8.5
10
mW
V GS=6 V, I D=5 A
-
12.4
15
-
1.1
1.7
W
16
33
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.0
|V DS|>2|I D|R DS(on)max,
I D=20 A
page 2
2013-10-17
BSZ100N06NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
860
1075
-
210
263
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
16
32
Turn-on delay time
t d(on)
-
6
-
Rise time
tr
-
2
-
Turn-off delay time
t d(off)
-
10
-
Fall time
tf
-
2
-
Gate to source charge
Q gs
-
4.1
-
Gate charge at threshold
Q g(th)
-
2.4
-
Gate to drain charge
Q gd
-
2.5
3.7
Switching charge
Q sw
-
4.2
-
Gate charge total
Qg
-
12
15
Gate plateau voltage
V plateau
-
4.8
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
10
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
14
-
-
-
30
-
-
160
-
0.92
1.2
V
-
33
53
ns
-
30
-
nC
V DD=30 V, V GS=10 V,
I D=20 A, R G,ext=1.6 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=20 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=20 A,
T j=25 °C
V R=30 V, I F=20 A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.0
page 3
2013-10-17
BSZ100N06NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
40
30
ID [A]
Ptot [W]
30
20
20
10
10
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
10
103
limited by on-state
resistance
0.5
102
1 µs
1
ZthJC [K/W]
ID [A]
10 µs
100 µs
101
1 ms
DC
10 ms
0.1
0.05
0.02
0.1
0.01
single pulse
100
10-1
10-1
100
101
102
VDS [V]
Rev.2.0
0.2
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
tp [s]
page 4
2013-10-17
BSZ100N06NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
25
140
10 V
5V
20
120
5.5 V
7V
RDS(on) [mW]
ID [A]
100
80
6V
60
6V
15
7V
10
10 V
5.5 V
40
5
5V
20
0
0
0.0
0.5
1.0
1.5
2.0
0
40
80
VDS [V]
120
160
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
160
80
140
120
60
gfs [S]
ID [A]
100
80
40
60
40
20
20
150 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.0
0
20
40
60
ID [A]
page 5
2013-10-17
BSZ100N06NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
5
18
16
4
max
12
3
VGS(th) [V]
RDS(on) [mW]
14
10
typ
8
140 mA
14 µA
2
6
4
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
103
10000
102
1000
IF [A]
C [pF]
Ciss
Coss
102
101
100
25 °C
150 °C
Crss
101
100
10
0
20
40
60
VDS [V]
Rev.2.0
0
0.5
1
1.5
2
VSD [V]
page 6
2013-10-17
BSZ100N06NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=20 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
48 V
10
8
VGS [V]
IAV [A]
25 °C
100 °C
125 °C
1
6
4
2
0.1
1
10
100
0
1000
0
5
tAV [µs]
10
15
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.0
page 7
2013-10-17
BSZ100N06NS
PG-TSDSON-8 (Fused Leads): Outline
Rev.2.0
page 8
2013-10-17
BSZ100N06NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 9
2013-10-17
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