DMN6066SSD

DMN6066SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V(BR)DSS
Features and Benefits
RDS(on)
ID
TA = +25°C
66mΩ @ VGS = 10V
4.4A
97mΩ @ VGS = 4.5V
3.6A
60V

Low on-resistance

Fast switching speed

100% Unclamped Inductive Switch (UIS) test in production




Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

Motor Control

Moisture Sensitivity: Level 1 per J-STD-020
Backlighting

Terminals Connections: See Diagram Below

DC-DC Converters


Power Management Functions
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (Approximate)

UL Flammability Classification Rating 94V-0
SO-8
Top View
Equivalent Circuit
Top View
Ordering Information (Notes 4 & 5)
Part Number
DMN6066SSD-13
DMN6066SSDQ-13
Notes:
Compliance
Commercial
Automotive
Case
SO-8
SO-8
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www. diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
N6066SD
YY
WW
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
= Manufacturer’s Marking
N6066SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
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ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 13)
(Note 13)
(Note 8)
TA = +70°C (Note 8)
(Note 7)
(Note 9)
(Note 8)
(Note 9)
Symbol
VDSS
VGS
EAS
IAS
ID
IDM
IS
ISM
Value
60
20
37.5
5.0
4.4
3.5
3.3
17.0
3.2
17.0
Unit
V
V
mJ
A
Value
1.25
10
1.8
14.3
2.14
17.2
100
70
58
55
-55 to 150
Unit
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Notes 7 & 10)
Power Dissipation
Linear Derating Factor
(Notes 7 & 11)
PD
(Notes 8 & 10)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 10 & 12)
RJA
RJL
TJ, TSTG
W
mW/°C
°C/W
°C
6. AEC-Q101 VGS maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t  10 sec.
9. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
10. For a dual device with one active die.
11. For a device with two active die running at equal power.
12. Thermal resistance from junction to solder-point (at the end of the drain lead).
13. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = +25°C.
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
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DMN6066SSD
2.0
RDS(on) Limited
Max Power Dissipation (W)
ID Drain Current (A)
10
1
100m
DC
1s
100ms
10m
1m
100m
10ms
Single Pulse
T amb=25°C
1ms
100µs
One active die
1
10
VDS Drain-Source Voltage (V)
1.8
1.6
1.4
Two active die
1.2
1.0
0.8
0.6
One active die
0.4
0.2
0.0
0
20
Single Pulse
D=0.05
D=0.1
1
10
100 120 140 160
100
1k
Single Pulse
T amb=25°C
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32109 Rev. 4 - 2
80
100
Pulse Width (s)
DMN6066SSD
60
Derating Curve
Maximum Power (W)
110
T amb=25°C
100
One
active die
90
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m 10m 100m
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics
Pulse Power Dissipation
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ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60






0.5
100
V
µA
nA
ID = 250µA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= 20V, VDS= 0V
VGS(th)
1.0
RDS (ON)

Forward Transconductance (Notes 14 & 15)
Diode Forward Voltage (Note 14)
Reverse recovery time (Note 15)
Reverse recovery charge (Note 15)
DYNAMIC CHARACTERISTICS (Note 15)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 16)
Total Gate Charge (Note 16)
Gate-Source Charge (Note 16)
Gate-Drain Charge (Note 16)
Turn-On Delay Time (Note 16)
Turn-On Rise Time (Note 16)
Turn-Off Delay Time (Note 16)
Turn-Off Fall Time (Note 16)
gfs
VSD
trr
Qrr




3.0
0.066
0.097

1.15


V
Static Drain-Source On-Resistance (Note 14)

0.048
0.068
19.2
0.89
22.2
16.9
S
V
ns
nC
ID= 250µA, VDS= VGS
VGS= 10V, ID= 4.5A
VGS= 4.5V, ID= 3.5A
VDS= 15V, ID= 6A
IS= 4.5A, VGS= 0V
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf











502
45.7
27.1
5.4
10.3
1.7
3.2
2.7
2.4
14.7
5.4











pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Notes:
Ω
Test Condition
IS= 1.9A, di/dt= 100A/µs
VDS= 30V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 4.5A
VDD= 30V, VGS= 10V
ID= 1A, RG  6.0Ω
14. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
15. For design aid only, not subject to production testing.
16. Switching characteristics are independent of operating junction temperatures.
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
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DMN6066SSD
10V
T = 150°C
4.5V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
4V
3.5V
1
0.1
3V
VGS
0.01
3.5V
1
3V
2.5V
0.1
VGS
2V
1
10
0.1
T = 150°C
T = 25°C
0.01
1E-3
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised R DS(on) and V GS(th)
1
1
10
Output Characteristics
VDS = 10V
0.1
1
VDS Drain-Source Voltage (V)
Output Characteristics
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
0
VGS(th)
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
VGS
10
3.5V
1
4V
4.5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
4.5V
4V
10
VDS Drain-Source Voltage (V)
10
10V
0.01
0.1
RDS(on) Drain-Source On-Resistance ()
ADVANCE INFORMATION
Typical Characteristics
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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DMN6066SSD
VGS = 0V
600
400
f = 1MHz
CISS
COSS
CRSS
200
0
0.1
1
10
VGS Gate-Source Voltage (V)
10
C Capacitance (pF)
ADVANCE INFORMATION
Typical Characteristics (continued)
8
6
4
0
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
VDS = 30V
2
ID = 4.5A
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
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ADVANCE INFORMATION
Test Circuits
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
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DMN6066SSD
Package Outline Dimensions
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
Θ
0
8
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN6066SSD
Document Number DS32109 Rev. 4 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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