Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD6604-H
Power MOSFET
20V COMPLEMENTARY
MOSFET

DESCRIPTION
The UTC UD6604-H is a 20V complementary MOSFET, it uses
UTC’s advanced technology to provide the customers a minimum on
state resistance, etc.
The UTC UD6604-H is suitable for load switch and battery
protection applications.

FEATURES
* 3.4A, 20V, RDS(ON) < 36 mΩ @ VGS=4.5V, ID=3.4A
RDS(ON) < 45 mΩ @ VGS=2.5V, ID=3A
RDS(ON) < 55 mΩ @ VGS=1.8V, ID=2A
-2.5A, -20V, RDS(ON) < 66mΩ @ VGS=-4.5V, ID=-2.5A
RDS(ON) < 83 mΩ @ VGS=-2.5V, ID=-2A
RDS(ON) < 93 mΩ @ VGS=-1.8V, ID=-1A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UD6604G-AG6-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-26
Pin Assignment
1 2 3 4 5 6
G1 S2 G2 D2 S1 D1
Packing
Tape Reel
S: Source
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UD6604-H

Power MOSFET
MARKING
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UD6604-H
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
RATINGS
UNIT
N-CHANNEL P-CHANNEL
Drain-Source Voltage
VDSS
20
-20
V
Gate-Source Voltage
VGSS
±8
±8
V
TA=25°C
3.4
-2.5
A
ID
Continuous Drain Current
TA=70°C
2.5
-2
A
Pulsed Drain Current (Note 3)
IDM
13
-13
A
TA=25°C
1.1
1.1
W
Power Dissipation (Note 2)
PD
TA=70°C
0.7
0.7
W
Operating Temperature Range
TJ
-55~150
°C
Storage Temperature Range
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL CHARACTERISTICS
PARAMETER
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 1, 4)
SYMBOL
t ≤10s
Steady-State
UNISONIC TECHNOLOGIES CO., LTD
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θJA
TYP
78
106
MAX
110
150
UNIT
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55°C
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
20
VDS=VGS, ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3.4A
VGS=4.5V, ID=3.4A, TJ=125°C
VGS=2.5V, ID=3A
VGS=1.8V, ID=2A
VDS=5V, ID=3.4A
0.4
13
1
5
+100
-100
0.7
1
36
85
45
55
V
µA
µA
nA
nA
V
A
mΩ
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
16
DYNAMIC PARAMETERS
Input Capacitance
CISS
315
pF
VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance
COSS
50
pF
Reverse Transfer Capacitance
CRSS
40
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
2.9
ns
Turn-ON Rise Time
tR
8.4
ns
VDS=10V, VGS=4.5V, ID=1A
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
19.2
ns
Turn-OFF Fall-Time
tF
5.6
ns
Total Gate Charge
QG
5.8
nC
VGS=4.5V, VDS=10V, ID=4A
Gate to Source Charge
QGS
0.6
nC
Gate to Drain Charge
QGD
1.5
nC
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.7
1
V
Maximum Body-Diode Continuous Current
IS
1.5
A
Body Diode Reverse Recovery Time
trr
14
19
ns
IF=3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
3.8
nC
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board
design.
2. The power dissipation PD is based on TJ(MAX)=150°C, using≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient.
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UD6604-H
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Forward
Reverse
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-20
VDS=VGS, ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-2.5A
VGS=-4.5V, ID=-2.5A, TJ=125°C
VGS=-2.5V, ID=-2A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-2.5A
-0.4 -0.65
-13
-1
-5
+100
-100
-1
66
105
83
93
V
µA
µA
nA
nA
V
A
mΩ
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
13
DYNAMIC PARAMETERS
Input Capacitance
CISS
515
pF
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
20
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
5
ns
Turn-ON Rise Time
tR
17.4
ns
VDS=-10V, VGS=-4.5V, ID=1A
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
40.7
ns
Turn-OFF Fall-Time
tF
11.4
ns
Total Gate Charge
QG
6.4
nC
VGS=-4.5V, VDS=-10V, ID=-3A
Gate to Source Charge
QGS
0.9
nC
Gate to Drain Charge
QGD
1.6
nC
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-0.7
-1
V
Maximum Body-Diode Continuous Current
IS
-1.5
A
Body Diode Reverse Recovery Time
trr
37
49
ns
IF=-2.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
27
nC
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board
design.
2. The power dissipation PD is based on TJ(MAX)=150°C, using≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient.
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UD6604-H
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
N-CHANNEL
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
P-CHANNEL
VGS
Same Type
as DUT
12V
QG
-10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
-10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Power MOSFET
TYPICAL CHARACTERISTICS
N-Channel:
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Power MOSFET
TYPICAL CHARACTERISTICS
P-Channel
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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