Amplifier Transistor NPN

MPS6507
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
20
Vdc
Collector −Base Voltage
VCBO
30
Vdc
Emitter −Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
http://onsemi.com
TO−92 (TO−226AA)
CASE 29−04
STYLE 1
1
2
3
COLLECTOR
3
2
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Ambient
RqJA
Thermal Resistance, Junction−to−Case
(1)
RqJC
Max
Unit
200
°C/W
83.3
°C/W
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
—
—
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
30
—
—
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
3.0
—
—
Vdc
—
—
—
—
50
1.0
nAdc
mAdc
hFE
25
75
—
—
fT
700
800
—
MHz
Cobo
—
1.25
2.5
pF
hfe
20
—
—
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60°C)
ICBO
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 2.0 mAdc, VCE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
MPS6507/D
MPS6507
PACKAGE DIMENSIONS
CASE 029−04
(TO−226AA)
ISSUE AD
A
B
R
P
L
F
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
K
D
X X
J
G
H
V
C
1
SECTION X−X
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2
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