MOTOROLA PBF493RS

Order this document
by PBF493RS/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–300
Vdc
Collector – Base Voltage
VCBO
–300
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–300
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–300
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
ICBO
—
–0.25
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc)
IEBO
—
–20
nAdc
Collector Cutoff Current
(VCE = –10 Vdc)
ICEO
—
–250
nAdc
Characteristic
OFF CHARACTERISTICS
(Replaces PBF493R/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
PBF493RS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
40
40
25
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
PBF493RS
All Types
All Types
—
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.5
Vdc
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
—
–0.9
Vdc
fT
50
—
MHz
Cobo
—
6.0
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PBF493RS
200
hFE, DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT (mA)
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
VR, REVERSE VOLTAGE (VOLTS)
100
200
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
70
50
30
20
10
1.0
Figure 2. Capacitances
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
500
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
2.0
Figure 3. Current–Gain — Bandwidth Product
1.4
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
1.0
TJ = 25°C
VCE = 20 V
f = 20 MHz
VCE(sat) @ IC/IB = 10
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
100
10 µs
100 µs
TA = 25°C
1.0 ms
TC = 25°C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
PBF493RS
10
20
50
100
200
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
3
PBF493RS
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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4
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*PBF493RS/D*
PBF493RS/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data