Amplifier Transistor NPN

MMBT6521LT1G,
SMMBT6521LT1G
Amplifier Transistor
NPN Silicon
http://onsemi.com
Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO −236)
CASE 318 −08
STYLE 6
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
25
Vdc
Collector −Base Voltage
VCBO
40
Vdc
Emitter −Base Voltage
VEBO
4.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
−55 to +150
C
Collector Current — Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
RO M G
G
1
RO
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT6521LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBT6521LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMBT6521LT1/D
MMBT6521LT1G, SMMBT6521LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristic
Min
Max
25
−
4.0
−
−
0.5
−
10
150
300
−
600
−
0.5
−
3.5
−
3.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100mAdc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
Vdc
SMALL−SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz,
3.0 dB points @ = 10 Hz and 10 kHz)
RS
NF
pF
dB
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+3.0 V
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+10.9 V
10 k
-0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
-9.1 V
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−On Time
Figure 3. Turn−Off Time
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2
CS < 4.0 pF*
MMBT6521LT1G, SMMBT6521LT1G
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 mA
10
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
100 mA
7.0
5.0
10 mA
3.0
20
300 mA
100 mA
10
5.0
2.0
1.0
30 mA
0.5
30 mA
BANDWIDTH = 1.0 Hz
RS  
IC = 1.0 mA
10 mA
0.2
2.0
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10
10k
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10k
Figure 5. Noise Current
Figure 4. Noise Voltage
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
500k
1M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
8.0 dB
10
20
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
Figure 7. Narrow Band, 1.0 kHz
Figure 6. Narrow Band, 100 Hz
RS , SOURCE RESISTANCE (OHMS)
3.0 dB
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF + 20 log10
10k
5k
1.0 dB
2k
1k
500
en
In
K
T
RS
2.0 dB
3.0 dB
5.0 dB
200
100
50
20
30
50 70 100
200 300
500 700
1k
IC, COLLECTOR CURRENT (mA)
Figure 8. Wideband
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3
Ǔ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10−23 j/K)
= Temperature of the Source Resistance (K)
= Source Resistance (Ohms)
8.0 dB
10
ǒ
MMBT6521LT1G, SMMBT6521LT1G
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125C
25C
200
-55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25C
PULSE WIDTH = 300 ms
80 DUTY CYCLE  2.0%
300 mA
200 mA
40
100 mA
20
0
5.0 10
0
20
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/C)
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
40
Figure 11. Collector Characteristics
1.4
0.1
400 mA
60
Figure 10. Collector Saturation Region
0.8
IB = 500 mA
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)
- 55C to 25C
-0.8
25C to 125C
-1.6
qVB for VBE
-2.4
0.1
100
*APPLIES for IC/IB  hFE/2
Figure 12. “On” Voltages
0.2
- 55C to 25C
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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4
50
100
MMBT6521LT1G, SMMBT6521LT1G
TYPICAL DYNAMIC CHARACTERISTICS
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
20 30
5.0 7.0 10
3.0
IC, COLLECTOR CURRENT (mA)
50 70
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Current−Gain — Bandwidth Product
Figure 17. Capacitance
hfe  200 @ IC = 1.0 mA
7.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hoe, OUTPUT ADMITTANCE (m mhos)
10
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50
200
20
hie , INPUT IMPEDANCE (k  )
50
Figure 15. Turn−Off Time
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 14. Turn−On Time
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe  200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 18. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MMBT6521LT1G, SMMBT6521LT1G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 21
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 20. Thermal Response
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
A train of periodical power pulses can be represented by
the model as shown in Figure 21. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 20 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 20
by the steady state value RqJA.
Example:
The MPS6521 is dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10-1
10-2
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (C)
Figure 21.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
2.0
10 ms
1.0 s
TA = 25C
20
4.0
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 22 is based upon TJ(pk) = 150C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk)  150C. TJ(pk)
may be calculated from the data in Figure 20. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
100 ms
4.0
6.0 8.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 22.
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6
MMBT6521LT1G, SMMBT6521LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT6521LT1/D
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