Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
2010 Sep 13
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
FEATURES
PINNING
• Low current
PIN
DESCRIPTION
• Very high power gain
1
GND
• Low noise figure
2
RF in
• Integrated temperature compensated biasing
3
CTRL (bias current control)
• Control pin for adjustment bias current
4
VS + RF out
• Supply and RF output pin combined.
APPLICATIONS
CTRL
handbook, halfpage
• RF front end
3
4
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
VS+RFout
BIAS
CIRCUIT
• Low noise amplifiers
• Satellite television tuners (SATV)
2
• High frequency oscillators.
Top view
1
RFin
Marking code: A3*
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
GND
MAM427
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
−
4.5
V
IS
DC supply current
VVS-OUT = 2.5 V; ICTRL = 1 mA;
RF input AC coupled
11
−
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1800 MHz;
Tamb = 25 °C
16
−
dB
NF
noise figure
VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt
1.8
−
dB
2010 Sep 13
2
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VS
supply voltage
RF input AC coupled
VCTRL
voltage on control pin
IS
supply current (DC)
ICTRL
control current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
forced by DC voltage on RF input
or ICTRL
Ts ≤ 100 °C
MIN.
MAX.
UNIT
−
4.5
V
−
2
V
−
30
mA
−
3
mA
−
135
mW
−65
+150
°C
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
350
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
MSG
|s21|2
s12
NF
IP3(in)
PARAMETER
supply current
maximum stable gain
insertion power gain
isolation
noise figure
input intercept point; note 1
CONDITIONS
TYP.
MAX.
UNIT
VVS-OUT = 2.5 V; ICTRL = 0.4 mA
3
4.5
6
mA
VVS-OUT = 2.5 V; ICTRL = 1.0 mA
8
11
15
mA
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
−
24
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
−
16
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
18
19
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
13
14
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 900 MHz
−
26
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 1800 MHz
−
20
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz; ΓS = Γopt
−
1.8
2
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz; ΓS = Γopt
−
1.8
2
dB
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;
f = 900 MHz
−
−6.5
−
dBm
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;
f = 1800 MHz
−
−4.8
−
dBm
Note
1. See application note RNR-T45-99-B-0514.
2010 Sep 13
MIN.
3
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS537
200
handbook, halfpage
handbook, halfpage
100 pF
Ptot
(mW)
R1
VS
150
L1
C
RF out
RCTRL
VCTRL
3
100
4
BGA2003
50
2
1
C
0
0
RF in
50
100
150
MGS536
Fig.2 Typical application circuit.
Ts (°C)
200
Fig.3 Power derating.
MGS538
MGS539
30
2.5
handbook, halfpage
handbook, halfpage
I CTRL
(mA)
I VS-OUT
(mA)
2
20
1.5
1
10
0.5
0
0
0
0.5
1
1.5
2
VCTRL (V)
0
ICTRL = (VCTRL − 0.83)/296.
VS-OUT = 2.5 V.
Fig.4
Fig.5
Control current as a function of the control
voltage on pin 3; typical values.
2010 Sep 13
4
0.5
1
1.5
2
I CTRL (mA)
2.5
Bias current as a function of the control
current; typical values.
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS540
30
I VS-OUT
(mA)
25
MGS541
20
handbook, halfpage
handbook, halfpage
(6)
I VS-OUT
(mA)
(5)
15
20
(4)
15
10
(3)
10
5
5
(2)
(1)
0
−40
VS-OUT = 2.5 V.
(1) ICTRL = 0.2 mA.
(2) ICTRL = 0.4 mA.
(3) ICTRL = 1.0 mA.
Fig.6
0
0
40
80
120
Tamb (°C)
0
(4) ICTRL = 1.5 mA.
(5) ICTRL = 2.0 mA.
(6) ICTRL = 2.5 mA.
2
3
4
VVS-OUT (V)
5
ICTRL = 1 mA.
Bias current (IVS-OUT) as a function of the
ambient temperature with ICTRL as
parameter; typical values.
Fig.7
MGS542
25
1
Bias current (IVS-OUT) as a function of the
voltage at the output pin (VVS-OUT); typical
values.
MGS543
30
gain
(dB)
25
handbook, halfpage
handbook, halfpage
fT
(GHz)
20
MSG
Gmax
GUM
20
15
15
10
10
5
5
0
0
0
10
0
20
30
I VS-OUT (mA)
5
10
VVS-OUT = 2.5 V; f = 1000 MHz.
VVS-OUT = 2.5 V; f = 900 MHz.
Fig.8
Fig.9
Transition frequency as a function of the
bias current (IVS-OUT); typical values.
2010 Sep 13
5
15
20
25
I VS-OUT (mA)
Gain as a function of the bias current
(IVS-OUT); typical values.
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS544
25
gain
(dB)
MGS545
40
handbook, halfpage
handbook, halfpage
gain
(dB)
MSG
20
30
Gmax
15
20
G UM
GUM
Gmax
10
10
5
0
102
0
0
5
10
15
20
25
IVS-OUT (mA)
103
f (MHz)
104
VVS-OUT = 2.5 V; f = 1800 MHz.
VVS-OUT = 2.5 V; IVS-OUT = 10 mA.
Fig.10 Gain as a function of the bias current
(IVS-OUT); typical values.
Fig.11 Gain as a function of frequency; typical
values.
MGS546
3
min
(dB)
2.5
handbook,
NF halfpage
2
(1)
(3)
(2)
(4)
1.5
1
0.5
0
1
(1)
(2)
(3)
(4)
10
I VS-OUT (mA)
102
f = 2400 MHz.
f = 1800 MHz.
f = 1000 MHz.
f = 900 MHz.
Fig.12 Minimum noise figure as a function of the
bias current (IVS-OUT); typical values.
2010 Sep 13
6
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
handbook, full pagewidth
90°
unstable region
source
135°
1.0
+1
45°
+2
+ 0.5
unstable
region load
0.6
(1)
(2)
+ 0.2
180°
0
0.5
0.4
+5
(3)
Γopt
0.2
1
0.8
0.2
2
5
0°
0
(4)
− 0.2
(1)
(2)
(3)
(4)
(5)
(6)
−5
(5)
f = 900 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(6)
G = 23 dB.
G = 22 dB.
G =21 dB.
NF = 1.8 dB.
NF = 2 dB.
NF = 2.2 dB.
−135°
− 0.5
−2
− 45°
−1
1.0
− 90°
MGS547
Fig.13 Noise, stability and gain circles; typical values.
handbook, full pagewidth
90°
unstable region
source
135°
+1
+ 0.5
(3)
+2
(4)
unstable
region load
1.0
45°
0.8
(2)
0.6
(1)
+ 0.2
0.4
+5
0.2
180°
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Gmax = 16.1 dB.
G = 16 dB.
G = 15 dB.
G = 14 dB.
NF = 1.9 dB.
NF = 2.1 dB.
NF = 2.3 dB.
0.2
0
0.5
1
2
5
0°
Γopt
(5)
− 0.2
−5
(6)
(7)
−135°
− 0.5
−2
− 45°
−1
1.0
− 90°
MGS548
Fig.14 Noise, stability and gain circles; typical values.
2010 Sep 13
0
7
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
2 GHz
5
1 GHz
3 GHz
0
200 MHz
500 MHz
−0.2
−0.5
−135°
0°
100 MHz
−5
−2
−45°
−1
1.0
−90°
MGS549
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
500 MHz
900 MHz
1 GHz
200 MHz
1.8 GHz
100 MHz
180°
20
16
12
8
3 GHz
4
0°
−135°
− 45°
− 90°
MGS550
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
2010 Sep 13
8
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
handbook, full pagewidth
135°
45°
3 GHz
180°
0.5
0.4
0.3
0.2
0.1
0°
100 MHz
−135°
− 45°
− 90°
MGS551
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
100 MHz
900 MHz
1 GHz
−0.2
−135°
3 GHz
−0.5
1.8 GHz 500 MHz
−2
0°
0
200 MHz
−5
−45°
−1
1.0
−90°
MGS552
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
2010 Sep 13
9
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
2010 Sep 13
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability ⎯ Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
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charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
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products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2010 Sep 13
11
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
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Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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may be interpreted or construed as an offer to sell products
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
2010 Sep 13
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provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for the marking codes
and the package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/05/pp13
Date of release: 2010 Sep 13
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