BGU6102 Wideband silicon low-noise amplifier MMIC Rev. 3 — 13 July 2012 Product data sheet 1. Product profile 1.1 General description The BGU6102 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6102 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 2 mA operation. 1.2 Features and benefits Supply voltage range from 1.5 V to 5 V Current range up to 20 mA at 3 V and 40 mA at 5 V supply voltage NFmin of 0.7 dB Applicable between 40 MHz and 4 GHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 6 A ESD protection on all pins up to 3 kV HBM Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm 1.3 Applications FM radio Mobile TV, CMMB ISM Wireless security RKE, TPMS AMR, ZigBee, Bluetooth WiFi, WLAN (2.4 GHz) Low current applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 3.0 mA; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit s212 insertion power gain f = 450 MHz - - NFmin minimum noise figure 18.5 dB f = 900 MHz - 16.5 - dB f = 2400 MHz; ICC(tot) = 6 mA - 14.0 - dB f = 450 MHz - 0.7 - dB f = 900 MHz - 0.8 - dB f = 2400 MHz; ICC(tot) = 6 mA - 1.2 - dB BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 1. Quick reference data …continued Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 3.0 mA; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions PL(1dB) output power at 1 dB gain f = 450 MHz compression f = 900 MHz output third-order intercept point IP3O Min Typ - 5.0 Max Unit - dBm - 5.5 - dBm f = 2400 MHz; ICC(tot) = 6 mA - 0 - dBm f = 450 MHz - 5.5 - dBm f = 900 MHz - 6.0 - dBm f = 2400 MHz; ICC(tot) = 6 mA - 11.5 - dBm 2. Pinning information 2.1 Pinning 1 6 2 5 3 4 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description VCC 1 supply voltage n.c. 2 not connected RF_IN 3 RF in RF_OUT 4 RF out ENABLE 5 enable CUR_ADJ 6 current adjust GND GND ground pad; RF and DC ground 3. Ordering information Table 3. BGU6102 Product data sheet Ordering information Type number Package Name Description BGU6102 HXSON6 plastic thermal enhanced super thin small outline SOT1209 package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm OM7809 - 50 LNA evaluation board - OM7810 - high-ohmic LNA evaluation board - All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 Version © NXP B.V. 2012. All rights reserved. 2 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 4. Marking Table 4. Marking Type number Marking Description BGU6102 1B* * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC supply voltage RF input, AC coupled Min Max Unit - 5.5 V [1] 0.5 VCC + 1.8 V [2] 0.5 +0.9 V VENABLE voltage on pin ENABLE VRF_IN voltage on pin IN DC VRF_OUT voltage on pin RF_OUT DC 0.5 VCC + 1.8 V ICC(tot) total supply current VCC = 5.0 V - 40 mA Tstg storage temperature 55 +150 C Tj junction temperature - 150 C VESD electrostatic discharge voltage Human Body Model (HBM); according to JEDEC standard 22-A114E - 3000 V Charged Device Model (CDM); according to JEDEC standard 22-C101B - 500 V [1] Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current. [2] The RF input is directly coupled to the base of the RF transistor. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 110 K/W 7. Static characteristics Table 7. Static characteristics Symbol Parameter Conditions VCC supply voltage RF input, AC coupled ICC(tot) total supply current VCC = 3.0 V VENABLE 0.4 V Tamb BGU6102 Product data sheet ambient temperature [1] ICC(tot) = ICC + IRF_OUT + IR_BIAS. [2] Configurable with external resistor. All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 [1][2] [1] Min Typ Max Unit 1.5 - 5.0 V 2.1 - 21 mA - - 0.01 mA 40 +25 +85 C © NXP B.V. 2012. All rights reserved. 3 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 8. Dynamic characteristics Table 8. Dynamic characteristics Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 16.0 - dB ICC(tot) = 3 mA - 19.5 - dB ICC(tot) = 6 mA - 24.5 - dB ICC(tot) = 10 mA - 28.0 - dB ICC(tot) = 20 mA - 31.5 - dB 100 MHz frequency s212 MSG NFmin PL(1dB) IP3O BGU6102 Product data sheet insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression output third-order intercept point f = 100 MHz f = 100 MHz ICC(tot) = 2 mA - 29.0 - dB ICC(tot) = 3 mA - 31.0 - dB ICC(tot) = 6 mA - 33.5 - dB ICC(tot) = 10 mA - 35.5 - dB ICC(tot) = 20 mA - 37.5 - dB ICC(tot) = 2 mA - 0.8 - dB ICC(tot) = 3 mA - 0.7 - dB ICC(tot) = 6 mA - 0.8 - dB ICC(tot) = 10 mA - 0.8 - dB ICC(tot) = 20 mA - 1.0 - dB ICC(tot) = 2 mA - 6.0 - dBm ICC(tot) = 3 mA - 4.5 - dBm ICC(tot) = 6 mA - 0.5 - dBm ICC(tot) = 10 mA - 4.0 - dBm ICC(tot) = 20 mA - 9.5 - dBm ICC(tot) = 2 mA - 3.0 - dBm ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 10.5 - dBm ICC(tot) = 10 mA - 14.5 - dBm ICC(tot) = 20 mA - 19.5 - dBm f = 100 MHz f = 100 MHz f = 100 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 4 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 16.0 - dB ICC(tot) = 3 mA - 19.0 - dB ICC(tot) = 6 mA - 24.5 - dB ICC(tot) = 10 mA - 27.5 - dB ICC(tot) = 20 mA - 31.0 - dB ICC(tot) = 2 mA - 27.5 - dB ICC(tot) = 3 mA - 29.0 - dB ICC(tot) = 6 mA - 32.0 - dB ICC(tot) = 10 mA - 34.0 - dB ICC(tot) = 20 mA - 36.0 - dB ICC(tot) = 2 mA - 0.8 - dB ICC(tot) = 3 mA - 0.7 - dB ICC(tot) = 6 mA - 0.8 - dB ICC(tot) = 10 mA - 0.8 - dB ICC(tot) = 20 mA - 1.0 - dB - 6.5 - dBm 150 MHz frequency s212 MSG NFmin PL(1dB) insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression f = 150 MHz f = 150 MHz f = 150 MHz f = 150 MHz ICC(tot) = 2 mA IP3O BGU6102 Product data sheet output third-order intercept point ICC(tot) = 3 mA - 4.5 - dBm ICC(tot) = 6 mA - 0.0 - dBm ICC(tot) = 10 mA - 3.5 - dBm ICC(tot) = 20 mA - 9.0 - dBm ICC(tot) = 2 mA - 3.0 - dBm ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 10.5 - dBm ICC(tot) = 10 mA - 14.5 - dBm ICC(tot) = 20 mA - 19.5 - dBm f = 150 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 5 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 15.5 - dB ICC(tot) = 3 mA - 18.5 - dB ICC(tot) = 6 mA - 23.0 - dB ICC(tot) = 10 mA - 26.0 - dB ICC(tot) = 20 mA - 29.0 - dB ICC(tot) = 2 mA - 22.5 - dB ICC(tot) = 3 mA - 24.5 - dB ICC(tot) = 6 mA - 27.0 - dB ICC(tot) = 10 mA - 29.0 - dB ICC(tot) = 20 mA - 31.0 - dB ICC(tot) = 2 mA - 0.8 - dB ICC(tot) = 3 mA - 0.7 - dB ICC(tot) = 6 mA - 0.8 - dB ICC(tot) = 10 mA - 0.8 - dB ICC(tot) = 20 mA - 1.0 - dB ICC(tot) = 2 mA - 7.0 - dBm ICC(tot) = 3 mA - 5.0 - dBm ICC(tot) = 6 mA - 0.5 - dBm ICC(tot) = 10 mA - 3.0 - dBm ICC(tot) = 20 mA - 9.0 - dBm ICC(tot) = 2 mA - 3.0 - dBm ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 10.5 - dBm ICC(tot) = 10 mA - 14.5 - dBm ICC(tot) = 20 mA - 19.5 - dBm 450 MHz frequency s212 MSG NFmin PL(1dB) IP3O BGU6102 Product data sheet insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression output third-order intercept point f = 450 MHz f = 450 MHz f = 450 MHz f = 450 MHz f = 450 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 6 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 14.0 - dB ICC(tot) = 3 mA - 16.5 - dB ICC(tot) = 6 mA - 20.5 - dB ICC(tot) = 10 mA - 23.0 - dB ICC(tot) = 20 mA - 25.0 - dB ICC(tot) = 2 mA - 19.5 - dB ICC(tot) = 3 mA - 21.5 - dB ICC(tot) = 6 mA - 24.0 - dB ICC(tot) = 10 mA - 26.0 - dB ICC(tot) = 20 mA - 28.0 - dB ICC(tot) = 2 mA - 0.8 - dB ICC(tot) = 3 mA - 0.8 - dB ICC(tot) = 6 mA - 0.7 - dB ICC(tot) = 10 mA - 0.8 - dB ICC(tot) = 20 mA - 1.0 - dB ICC(tot) = 2 mA - 7.5 - dBm ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 0.5 - dBm ICC(tot) = 10 mA - 3.5 - dBm ICC(tot) = 20 mA - 10.0 - dBm ICC(tot) = 2 mA - 3.5 - dBm ICC(tot) = 3 mA - 6.0 - dBm ICC(tot) = 6 mA - 11.5 - dBm ICC(tot) = 10 mA - 15.0 - dBm ICC(tot) = 20 mA - 21.0 - dBm 900 MHz frequency s212 MSG NFmin PL(1dB) IP3O BGU6102 Product data sheet insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression output third-order intercept point f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 7 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 11.5 - dB ICC(tot) = 3 mA - 14.0 - dB ICC(tot) = 6 mA - 17.5 - dB ICC(tot) = 10 mA - 19.5 - dB ICC(tot) = 20 mA - 21.0 - dB ICC(tot) = 2 mA - 18.0 - dB ICC(tot) = 3 mA - 19.5 - dB ICC(tot) = 6 mA - 22.0 - dB ICC(tot) = 10 mA - 24.0 - dB ICC(tot) = 20 mA - 25.5 - dB ICC(tot) = 2 mA - 1.0 - dB ICC(tot) = 3 mA - 1.0 - dB ICC(tot) = 6 mA - 0.9 - dB ICC(tot) = 10 mA - 0.9 - dB ICC(tot) = 20 mA - 1.0 - dB - 7.5 - dBm 1500 MHz frequency s212 MSG NFmin PL(1dB) insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression f = 1500 MHz f = 1500 MHz f = 1500 MHz f = 1500 MHz ICC(tot) = 2 mA IP3O BGU6102 Product data sheet output third-order intercept point ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 0.0 - dBm ICC(tot) = 10 mA - 4.0 - dBm ICC(tot) = 20 mA - 10.5 - dBm ICC(tot) = 2 mA - 3.5 - dBm ICC(tot) = 3 mA - 6.5 - dBm ICC(tot) = 6 mA - 12.5 - dBm ICC(tot) = 10 mA - 16.5 - dBm ICC(tot) = 20 mA - 21.5 - dBm f = 1500 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 8 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 10.5 - dB ICC(tot) = 3 mA - 12.5 - dB ICC(tot) = 6 mA - 16.0 - dB ICC(tot) = 10 mA - 17.5 - dB ICC(tot) = 20 mA - 19.0 - dB ICC(tot) = 2 mA - 17.0 - dB ICC(tot) = 3 mA - 18.5 - dB ICC(tot) = 6 mA - 21.5 - dB ICC(tot) = 10 mA - 23.0 - dB ICC(tot) = 20 mA - 24.5 - dB ICC(tot) = 2 mA - 1.1 - dB ICC(tot) = 3 mA - 1.1 - dB ICC(tot) = 6 mA - 1.0 - dB ICC(tot) = 10 mA - 1.0 - dB ICC(tot) = 20 mA - 1.1 - dB - 7.5 - dBm 1900 MHz frequency s212 MSG NFmin PL(1dB) insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression f = 1900 MHz f = 1900 MHz f = 1900 MHz f = 1900 MHz ICC(tot) = 2 mA IP3O BGU6102 Product data sheet output third-order intercept point ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 0.0 - dBm ICC(tot) = 10 mA - 4.5 - dBm ICC(tot) = 20 mA - 10.5 - dBm ICC(tot) = 2 mA - 3.0 - dBm ICC(tot) = 3 mA - 6.5 - dBm ICC(tot) = 6 mA - 12.0 - dBm f = 1900 MHz ICC(tot) = 10 mA - 16.0 - dBm ICC(tot) = 20 mA - 21 - dBm All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 9 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 8.5 - dB ICC(tot) = 3 mA - 11.0 - dB ICC(tot) = 6 mA - 14.0 - dB ICC(tot) = 10 mA - 15.5 - dB ICC(tot) = 20 mA - 17.0 - dB ICC(tot) = 2 mA - 16.5 - dB ICC(tot) = 3 mA - 18.0 - dB ICC(tot) = 6 mA - 20.5 - dB ICC(tot) = 10 mA - 22.0 - dB ICC(tot) = 20 mA - 23.0 - dB ICC(tot) = 2 mA - 1.5 - dB ICC(tot) = 3 mA - 1.3 - dB ICC(tot) = 6 mA - 1.2 - dB ICC(tot) = 10 mA - 1.2 - dB ICC(tot) = 20 mA - 1.3 - dB - 7.5 - dBm 2400 MHz frequency s212 MSG NFmin PL(1dB) insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression f = 2400 MHz f = 2400 MHz f = 2400 MHz f = 2400 MHz ICC(tot) = 2 mA IP3O BGU6102 Product data sheet output third-order intercept point ICC(tot) = 3 mA - 5.0 - dBm ICC(tot) = 6 mA - 0.0 - dBm ICC(tot) = 10 mA - 4.5 - dBm ICC(tot) = 20 mA - 10.5 - dBm ICC(tot) = 2 mA - 2.5 - dBm ICC(tot) = 3 mA - 6.0 - dBm ICC(tot) = 6 mA - 11.5 - dBm ICC(tot) = 10 mA - 16.0 - dBm ICC(tot) = 20 mA - 20.0 - dBm f = 2400 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 10 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 8. Dynamic characteristics …continued Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit ICC(tot) = 2 mA - 5.5 - dB ICC(tot) = 3 mA - 7.5 - dB ICC(tot) = 6 mA - 10.5 - dB ICC(tot) = 10 mA - 12.0 - dB ICC(tot) = 20 mA - 13.5 - dB ICC(tot) = 2 mA - 16.0 - dB ICC(tot) = 3 mA - 17.5 - dB ICC(tot) = 6 mA - 19.0 - dB ICC(tot) = 10 mA - 18.5 - dB ICC(tot) = 20 mA - 18.5 - dB ICC(tot) = 2 mA - 2.3 - dB ICC(tot) = 3 mA - 2.2 - dB ICC(tot) = 6 mA - 1.9 - dB ICC(tot) = 10 mA - 1.8 - dB ICC(tot) = 20 mA - 1.9 - dB ICC(tot) = 2 mA - 7.5 - dBm ICC(tot) = 3 mA - 5.5 - dBm ICC(tot) = 6 mA - 0.5 - dBm ICC(tot) = 10 mA - 4.5 - dBm ICC(tot) = 20 mA - 9.5 - dBm ICC(tot) = 2 mA - 2.5 - dBm ICC(tot) = 3 mA - 6.0 - dBm ICC(tot) = 6 mA - 11.5 - dBm ICC(tot) = 10 mA - 16.5 - dBm ICC(tot) = 20 mA - 20.0 - dBm 3500 MHz frequency s212 MSG NFmin PL(1dB) IP3O BGU6102 Product data sheet insertion power gain maximum stable gain minimum noise figure output power at 1 dB gain compression output third-order intercept point f = 3500 MHz f = 3500 MHz f = 3500 MHz f = 3500 MHz f = 3500 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 11 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 9. Enable control Table 9. ENABLE (pin 5) 40 C Tamb +85 C. VENABLE (V) State 0.4 OFF 1.2 ON aaa-001682 30 aaa-001683 30 Icc (mA) (4) ICC (mA) (2) (3) 20 20 10 10 (3) (2) (1) (1) 0 10 102 103 104 0 105 1 2 Rbias (Ω) Tamb = 25 C. 3 4 5 6 VCC, Vctrl (V) Tamb = 25 C. (1) VCC = 1.5 V (1) Rbias = OPEN (2) VCC = 3 V (2) Rbias = 12 k (3) VCC = 5 V (3) Rbias = 4.7 k (4) Rbias = 2.4 k Fig 2. Supply current as a function of bias resistor; typical values BGU6102 Product data sheet Fig 3. Supply current as a function of supply voltage and control voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 12 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC aaa-001684 40 aaa-001685 25 IP3O (dBm) lS21l2 (dB) 20 (1) 30 (3) (2) 15 (3) 10 (4) 20 (5) (6) 5 (2) (7) 0 10 (1) -5 -10 0 0 8 16 24 0 10 Icc(tot) (mA) Tamb = 25 C; VCC = 3 V; Pi = 30 dBm. 20 30 40 ICC (tot) (mA) Tamb = 25 C; f1 = 900 MHz; f2 = 900.2 MHz; Pi = 30 dBm. (1) f = 150 MHz (2) f = 450 MHz (1) VCC = 1.5 V (3) f = 900 MHz (2) VCC = 3 V (4) f = 1500 MHz (3) VCC = 5 V (5) f = 1900 MHz (6) f = 2400 MHz (7) f = 3500 MHz Fig 4. Insertion power gain (s212) as a function of total supply current; typical values BGU6102 Product data sheet Fig 5. Output third-order intercept point as a function of total supply current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 13 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC aaa-001686 20 PL(1dB) (dBm) 15 aaa-001687 25 lS21l2 (dB) 20 10 (3) 15 5 (2) 0 10 -5 5 -10 (1) -15 0 0 10 20 30 40 ICC(tot) (mA) 0 1000 2000 3000 4000 f (MHz) Tamb = 25 C; f = 900 MHz. Tamb = 25 C; ICC(tot) = 3 mA; VCC = 3 V; Pi = 30 dBm. (1) VCC = 1.5 V (2) VCC = 3 V (3) VCC = 5 V Fig 6. Output power at 1 dB gain compression as a function of total supply current; typical values Fig 7. Insertion power gain (s212) as a function of frequency; typical values aaa-001688 3 NFmin (dB) 2 1 0 0 1000 2000 3000 4000 f (MHz) Tamb = 25 C; ICC(tot) = 3 mA; VCC = 3 V. Fig 8. BGU6102 Product data sheet Minimum noise figure as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 14 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 10. Application information Other applications available. Please contact your local sales representative for more information. Application note(s) available on the NXP web site. All measurements are done with the SAM connector as reference plane. 10.1 High-ohmic FM radio characteristics Table 10. AC characteristics[1] Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 3.1 mA; f = 100 MHz; measurements done on high-ohmic FM radio application board. Symbol Parameter s212 Conditions Min Typ Max Unit insertion power gain - 13 - dB RLin input return loss - 1 - dB RLout output return loss ZS = 50 - 20 - dB - 1.0 - dB NF noise figure Pi(1dB) input power at 1 dB gain compression - 23 - dBm IP3I input third-order intercept point - 15 - dBm [1] See application note AN11091 for details. 10.2 50 ohm FM radio characteristics Table 11. AC characteristics[1] Tamb = 25 C; VCC = 2.8 V; ICC(tot) = 4.3 mA; f = 100 MHz; measurements done on 50 application board. Symbol Parameter s212 RLin Min Typ Max Unit insertion power gain - 15 - dB input return loss - 10 - dB RLout output return loss - 14 - dB NF noise figure - 1.3 1.8 dB Pi(1dB) input power at 1 dB gain compression - 20 - dBm IP3I input third-order intercept point - 12 - dBm [1] BGU6102 Product data sheet Conditions ZS = 50 See application note AN11090 for details. All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 15 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 11. Package outline HXSON6: plastic thermal enhanced super thin small outline package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm SOT1209 shape optional (4×) X D terminal 1 index area A E A1 detail X e1 b L 3 4 e 2 5 E2 E1 e 1 6 terminal 1 index area shape optional (6×) D1 0 1.5 mm scale Dimensions Unit mm A A1 b max 0.15 nom min 0.35 0.04 0.25 D D1 E E1 1.9 1.0 1.2 1.2 2.1 1.2 1.4 E2 e e1 1.0 0.5 1.7 L 0.15 1.4 0.25 Note 1. Dimension A is including plating thickness. Outline version sot1209_po References IEC JEDEC JEITA Issue date 11-06-10 11-09-15 SOT1209 Fig 9. European projection Package outline SOT1209 BGU6102 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 16 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 12. Abbreviations Table 12. Abbreviations Acronym Description AMR Automated Meter Reading CMMB China Mobile Multimedia Broadcasting ESD ElectroStatic Discharge FM Frequency Modulation ISM Industrial Scientific Medical LNA Low-Noise Amplifier MMIC Monolithic Microwave Integrated Circuit RKE Remote Keyless Entry TPMS Tire-Pressure Monitoring System WLAN Wireless Local Area Network 13. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU6102 v.3 20120713 Product data sheet - BGU6102 v.2 Modifications: • • Table 3 on page 2: swapped the descriptions of OM7809 and OM7810. Table 5 on page 3: changed the layout in order to remove the white gap on the next page and to reduce the page count with one page. BGU6102 v.2 20120203 Product data sheet - BGU6102 v.1 BGU6102 v.1 20110921 Preliminary data sheet - - BGU6102 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 17 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGU6102 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 18 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGU6102 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 July 2012 © NXP B.V. 2012. All rights reserved. 19 of 20 BGU6102 NXP Semiconductors Wideband silicon low-noise amplifier MMIC 16. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 9 10 10.1 10.2 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Enable control . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 15 High-ohmic FM radio characteristics . . . . . . . 15 50 ohm FM radio characteristics. . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 July 2012 Document identifier: BGU6102