Data Sheet

62
1
BGU7258
+;
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Rev. 2 — 30 October 2014
Product data sheet
1. Product profile
1.1 General description
The BGU7258 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiver
applications in the 5 GHz to 6 GHz ISM band. Manufactured in NXP’s high performance
SiGe:C technology, the BGU7258 couples best-in-class gain, noise figure, linearity and
efficiency with the process stability and ruggedness that are the hallmarks of SiGe
technology. The BGU7258 features a robust temperature-compensated internal bias
network and an integral bypass / shutdown feature that stabilizes the DC operating point
over temperature and enables operation in the presence of high input signals, while
minimizing current consumption in bypass (standby) mode. The 1.6 mm  1.6 mm
footprint coupled with only two external components, makes the circuit board
implementation of the BGU7258 LNA the smallest IEEE 802.11ac LNA with bypass
solution on the market, ideal for space sensitive applications.
1.2 Features and benefits
 Fully integrated, high performance LNA with built-in bypass
 Integrated DC blocking at RF input and RF output, with only two external components
needed.
 Low 1.6 dB noise figure with 13 mA current consumption
 Low bypass current of 1 A (typical)
 Single supply 3.0 V to 3.6 V operation
 Integrated concurrent 2.4 GHz notch filter and temperature stabilized bias network
 High IP3i and low EVM
 High ESD protection of 2 kV (HBM) on all pins
 Small, 0.5 mm pitch, 1.6  1.6  0.5 mm QFN-style package, MSL 1 at 260 C
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS) following NXP’s RHF-2006 indicator D (dark green)
1.3 Applications






IEEE 802.11a/n/ac WiFi, WLAN
Smartphones, tablets, netbooks and other portable computing devices
Access points, routers, gateways
Wireless video
LTE advanced in unlicensed spectrum (LTE-U)
General purpose ISM applications
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C; VCC = 3.3 V; ZS = ZL = 50 ; Pi = 30 dBm; f = 5.5 GHz unless otherwise specified. All
measurements done on application board (with a DC-decoupling capacitor of 4.7 nF placed close to
VCC [pin 6] and a 0.3 pF matching shunt capacitor at RF_IN) with SMA connectors as reference
plane.
Symbol
Parameter
Conditions
Min Typ Max Unit
ICC
supply current
gain mode
-
13
-
mA
bypass mode
-
1
-
A
power gain
Gp
gain mode
f = 5.1 GHz
[1]
12
14
16
dB
f = 5.9 GHz
[1]
11
13
15
dB
f = 5.1 GHz
[1]
-
7
-
dB
f = 5.9 GHz
[1]
-
7
-
dB
-
4
-
dBm
-
1.6
-
dB
bypass mode
Pi(1dB)
NF
[1]
input power at 1 dB gain compression
noise figure
gain mode
[1]
gain mode
Printed-Circuit Board (PCB) and connector losses excluded.
2. Pinning information
Table 2.
Pinning
Pin Symbol
Description
1
gain control, switch between
gain and bypass mode
CTRL
2
RF_IN
RF in
3
GND
ground
4
GND
ground
5
RF_OUT
RF out
Simplified outline
Graphic symbol
6
VCC
supply voltage
7
GND
ground pad
DDD
7UDQVSDUHQWWRSYLHZ
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
BGU7258
Product data sheet
Description
Version
BGU7258
HXSON6 plastic thermal enhanced extremely thin small outline
package; no leads; 6 terminals; body 1.6 x 1.6 x 0.5 mm
SOT1189-1
OM7870
-
-
5 GHz WLAN evaluation board
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
4. Marking
Table 4.
Marking
Type number
Marking
BGU7258
258
5. Block diagram
9&&
%*8
&75/
%,$6&21752/
*+]QRWFK
5)B,1
5)B287
DDD
Fig 1.
Block diagram
6. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as limiting
values of stress conditions during operation, that must not be exceeded under the worst case conditions.
Symbol
VCC
VI(RF_IN)
Parameter
Conditions
supply voltage
Max
Unit
0.5 +5.0
V
DC
[1][2][3]
0.5 +5.0
V
DC
[1][2][3]
0.5 +5.0
V
[1][2]
0.5 +5.0
V
RF input AC coupled
input voltage on pin RF_IN
Min
[1]
VI(RF_OUT)
input voltage on pin RF_OUT
VI(CTRL)
input voltage on pin CTRL
Tstg
storage temperature
40
+150 C
Tj
junction temperature
-
150
C
VESD
electrostatic discharge voltage
Human Body Model (HBM); according to the
joint JEDEC/ESDA standard JS-001-2012
-
2
kV
Charged Device Model (CDM); according to
JEDEC standard JESD22-C101
-
1
kV
BGU7258
Product data sheet
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as limiting
values of stress conditions during operation, that must not be exceeded under the worst case conditions.
Symbol
Parameter
Conditions
Pi
input power
f = 5500 MHz; CW
Min
Max
Unit
gain mode; VCC = 3.3 V
[1]
-
10
dBm
bypass mode; VCC = 3.3 V
[1]
-
10
dBm
[1]
Stressed with pulses of 200 ms in duration in an application circuit as depicted in Figure 34.
[2]
Warning: due to internal ESD diode protection, the applied DC voltage should not exceed VCC + 0.6 V and shall not exceed 5.0 V in
order to avoid excess current.
[3]
The RF input and RF output are AC-coupled through an internal DC blocking capacitor.
7. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-case)
thermal resistance from junction to case
Conditions
Typ
Unit
250
K/W
8. Static characteristics
Table 7.
BGU7258
Product data sheet
Static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
RF input, AC coupled
3.0
3.3
3.6
V
ICC
supply current
Pi = 30 dBm
II(CTRL)
input current on pin CTRL
Tamb
ambient temperature
gain mode
-
13
-
mA
bypass mode
-
1
-
A
-
50
-
A
40
+25
+85
C
gain mode
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
9. Dynamic characteristics
Table 8.
Dynamic characteristics
Tamb = 25 C; VCC = 3.3 V; ZS = ZL = 50 ; Pi = 30 dBm; f = 5.5 GHz unless otherwise specified. All measurements done on
application board (with a DC-decoupling capacitor of 4.7 nF placed close to VCC [pin 6] and a 0.3 pF matching shunt capacitor
at RF_IN) with SMA connectors as reference plane.
Symbol
Parameter
f
frequency
Gp
power gain
Conditions
Min
[1]
12
14
16
dB
11
13
15
dB
f = 5.1 GHz
-
7
-
dB
f = 5.9 GHz
-
7
-
dB
f = 5.9 GHz
[2]
bypass mode
RLout
output return loss
gain mode
-
17
-
dB
bypass mode
-
10
-
dB
gain mode
-
18
-
dB
bypass mode
-
16
-
dB
-
20
-
dB
gain mode
-
0.2 -
dB
bypass mode
-
0.2 -
dB
-
4
-
dBm
-
8
-
dBm
ISL
isolation
gain mode
Gflat
gain flatness
bandwidth across 80 MHz channel
Pi(1dB)
input power at 1 dB gain compression
gain mode
IP3I
input third-order intercept point
two-tone; 5 MHz spacing
Pi = 20 dBm; gain mode
Pi = 5 dBm; bypass mode
-
27
-
dBm
[2]
-
1.6
-
dB
gain mode
[3]
-
150
-
ns
bypass mode
[4]
-
20
-
ns
-
>1
-
NF
noise figure
gain mode
tsw(G)
gain switch time
VI(CTRL) = 0 V to 3.3 V
K
Rollett stability factor
Unit
[2]
gain mode
input return loss
Max
5925 MHz
f = 5.1 GHz
RLin
Typ
4900 -
0 GHz  f  20 GHz; gain mode
[1]
ISM 5 GHz (in band).
[2]
Printed-Circuit Board (PCB) and connector losses excluded.
[3]
measured from 50 % of VI(CTRL) control signal to 90% of maximum RF output signal.
[4]
measured from 50 % of VI(CTRL) control signal to 10% of maximum RF output signal.
10. Gain control
Table 9.
Gain control (pin CTRL)
Tamb = 25 C; VCC = 3.3 V.
BGU7258
Product data sheet
VI(CTRL) (V)
Mode
 0.5
bypass
 2.5
gain
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
11. Application information
Please contact your local sales representative for more information. Application note
AN11453 is available on the NXP website.
11.1 Graphs
Typical performance measured on the application board.
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; gain mode
(1) VCC = VI(CTRL) = 3.0 V
(1) VCC = VI(CTRL) = 3.0 V
(2) VCC = VI(CTRL) = 3.3 V
(3) VCC = VI(CTRL) = 3.6 V
(3) VCC = VI(CTRL) = 3.6 V
Input reflection coefficient as a function of
frequency at different supply voltages
BGU7258
Product data sheet
I*+]
Tamb = 25 C; gain mode
(2) VCC = VI(CTRL) = 3.3 V
Fig 2.
Fig 3.
Input reflection coefficient as a function of
frequency at different supply voltages
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; gain mode
(1) VCC = VI(CTRL) = 3.0 V
(2) VCC = VI(CTRL) = 3.3 V
(2) VCC = VI(CTRL) = 3.3 V
(3) VCC = VI(CTRL) = 3.6 V
(3) VCC = VI(CTRL) = 3.6 V
Forward transmission coefficient as a function
of frequency at different supply voltages
Fig 5.
Forward transmission coefficient as a function
of frequency at different supply voltages
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; gain mode
(1) VCC = VI(CTRL) = 3.0 V
(1) VCC = VI(CTRL) = 3.0 V
(2) VCC = VI(CTRL) = 3.3 V
(3) VCC = VI(CTRL) = 3.6 V
(3) VCC = VI(CTRL) = 3.6 V
Output reflection coefficient as a function of
frequency at different supply voltages
BGU7258
Product data sheet
I*+]
Tamb = 25 C; gain mode
(2) VCC = VI(CTRL) = 3.3 V
Fig 6.
Tamb = 25 C; gain mode
(1) VCC = VI(CTRL) = 3.0 V
Fig 4.
I*+]
Fig 7.
Output reflection coefficient as a function of
frequency at different supply voltages
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Input reflection coefficient as a function of
frequency at different ambient temperatures
Fig 9.
DDD
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(1) Tamb = 40 C
Fig 8.
6
G%
Input reflection coefficient as a function of
frequency at different ambient temperatures
DDD
6
G%
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 10. Forward transmission coefficient as a function
of frequency at different ambient temperatures
Product data sheet
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(2) Tamb = +25 C
BGU7258
Fig 11. Forward transmission coefficient as a function
of frequency at different ambient temperatures
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
8 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 12. Output reflection coefficient as a function of
frequency at different ambient temperatures
Fig 13. Output reflection coefficient as a function of
frequency at different ambient temperatures
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
(1) VCC = 3.0 V
(2) VCC = 3.3 V
(2) VCC = 3.3 V
(3) VCC = 3.6 V
(3) VCC = 3.6 V
Fig 14. Input reflection coefficient as a function of
frequency at different supply voltages
Product data sheet
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
(1) VCC = 3.0 V
BGU7258
Fig 15. Input reflection coefficient as a function of
frequency at different supply voltages
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
9 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
(1) VCC = 3.0 V
(1) VCC = 3.0 V
(2) VCC = 3.3 V
(2) VCC = 3.3 V
(3) VCC = 3.6 V
(3) VCC = 3.6 V
Fig 16. Forward transmission coefficient as a function
of frequency at different supply voltages
Fig 17. Forward transmission coefficient as a function
of frequency at different supply voltages
DDD
6
G%
DDD
6
G%
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
(1) VCC = 3.0 V
(2) VCC = 3.3 V
(2) VCC = 3.3 V
(3) VCC = 3.6 V
(3) VCC = 3.6 V
Fig 18. Output reflection coefficient as a function of
frequency at different supply voltages
Product data sheet
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; bypass mode
(1) VCC = 3.0 V
BGU7258
Fig 19. Output reflection coefficient as a function of
frequency at different supply voltages
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
10 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 20. Input reflection coefficient as a function of
frequency at different ambient temperatures
Fig 21. Input reflection coefficient as a function of
frequency at different ambient temperatures
DDD
6
G%
DDD
6
G%
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 22. Forward transmission coefficient as a function
of frequency at different ambient temperatures
Product data sheet
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
(2) Tamb = +25 C
BGU7258
Fig 23. Forward transmission coefficient as a function
of frequency at different ambient temperatures
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
6
G%
DDD
6
G%
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; bypass mode
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 24. Output reflection coefficient as a function of
frequency at different ambient temperatures
DDD
Fig 25. Output reflection coefficient as a function of
frequency at different ambient temperatures
DDD
1)
G%
1)
G%
I*+]
Tamb = 25 C; gain mode
(1) VCC = VI(CTRL) = 3.0 V
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) VCC = VI(CTRL) = 3.6 V
(3) Tamb = +85 C
Fig 26. Noise figure as a function of frequency at
different supply voltages
Product data sheet
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(2) VCC = VI(CTRL) = 3.3 V
BGU7258
Fig 27. Noise figure as a function of frequency at
different ambient temperatures
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
12 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
,3,
G%P
DDD
,3,
G%P
I*+]
Tamb = 25 C; two tone; 5 MHz spacing; Pi = 20 dBm;
gain mode
(1) VCC = VI(CTRL) = 3.0 V
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) VCC = VI(CTRL) = 3.6 V
(3) Tamb = +85 C
DDD
,3,
G%P
DDD
,3,
G%P
I*+]
Fig 29. Input third-order intercept point as a function
of frequency at different ambient temperatures
VCC = VI(CTRL) = 3.3 V; two tone; 5 MHz spacing;
Pi = 20 dBm; gain mode
(2) VCC = VI(CTRL) = 3.3 V
Fig 28. Input third-order intercept point as a function
of frequency at different supply voltages
I*+]
Tamb = 25 C; VI(CTRL) = 0 V; two tone; 5 MHz spacing;
Pi = 5 dBm; bypass mode
(1) Tamb = 40 C
(2) VCC = VI(CTRL) = 3.3 V
(2) Tamb = +25 C
(3) VCC = VI(CTRL) = 3.6 V
(3) Tamb = +85 C
BGU7258
Product data sheet
I*+]
VCC = 3.3 V; VI(CTRL) = 0 V; two tone; 5 MHz spacing;
Pi = 5 dBm; bypass mode
(1) VCC = VI(CTRL) = 3.0 V
Fig 30. Input third-order intercept point as a function
of frequency at different supply voltages
Fig 31. Input third-order intercept point as a function
of frequency at different ambient temperatures
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
13 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
DDD
3LG%
G%P
DDD
3LG%
G%P
I*+]
Tamb = 25 C; gain mode
(1) Tamb = 40 C
(2) VCC = VI(CTRL) = 3.3 V
(2) Tamb = +25 C
(3) VCC = VI(CTRL) = 3.6 V
(3) Tamb = +85 C
Fig 32. Input power at 1 dB gain compression as a
function of frequency at different supply
voltages
Product data sheet
I*+]
VCC = VI(CTRL) = 3.3 V; gain mode
(1) VCC = VI(CTRL) = 3.0 V
BGU7258
Fig 33. input power at 1 dB gain compression as a
function of frequency at different ambient
temperatures
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Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
14 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
11.2 Application circuit
In Figure 34 the application diagram as supplied on the evaluation board is given.
9&&
/1$JDLQE\SDVV
&75/
PP
5)B,1
5)B,1
ȍ
%*8 &
9&&
5)B287
ȍ
5)B287
ȍ
*1'
VKXQW
FDSDFLWRU
*1'
*1'
DDD
Fig 34. Evaluation board schematic
Note that in Figure 34 the schematic for the BGU7258 evaluation board is shown using
only two external components. A DC-decoupling capacitor placed close to VCC (pin 6) and
a matching shunt capacitor at RF_IN.
The BGU7258 can also be used without the matching capacitor at RF_IN. However, in this
case the gain will be 0.5 dB lower, the noise figure 0.1 dB higher and the input return loss
less than 10 dB (approximately 8 dB) over the whole 5 GHz ISM band (5 GHz to 6 GHz).
Table 10. List of components
See Figure 34 for evaluation board schematic.
Preferred vendors different from the ones listed can be chosen, but be aware that the performance
could be affected.
Component
Description
Value
Remarks
C1
capacitor
4.7 nF
Murata GRM155 series
shunt capacitor
capacitor
0.3 pF
Murata GJM155 series
RF_IN, RF_OUT
SMA connector
-
Emerson Network Power
VCC, LNA gain/bypass
3-pin connector
-
Molex
For more details or information please see application note AN11453.
BGU7258
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
15 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
12. Package outline
+;621SODVWLFWKHUPDOHQKDQFHGH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGV
WHUPLQDOVERG\[[PP
627
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BGU7258
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
16 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
13. Soldering
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BGU7258
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
17 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
14. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
EVM
Error Vector Magnitude
HBM
Human Body Model
IEEE
Institute of Electrical and Electronics Engineers
ISM
Industrial Scientific Medical
LTE
Long Term Evolution
LTE-U
Long Term Evolution Unlicensed
MMIC
Monolithic Microwave Integrated Circuit
MSL
Moisture Sensitivity Level
RHF
RoHS Halogen Free
QFN
Quad-Flat No-leads
SiGe:C
Silicon Germanium Carbon
SMA
SubMiniature version A
WLAN
Wireless Local Area Network
15. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU7258 v.2
20141030
Product data sheet
-
BGU7258 v.1
Modifications:
BGU7258 v.1
BGU7258
Product data sheet
•
The status of this document has been changed to Product data sheet.
20141023
Preliminary data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
-
© NXP Semiconductors N.V. 2014. All rights reserved.
18 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU7258
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
19 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU7258
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
20 of 21
BGU7258
NXP Semiconductors
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
18. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Gain control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 6
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application circuit . . . . . . . . . . . . . . . . . . . . . . 15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 October 2014
Document identifier: BGU7258
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