Data Sheet

Document Number: MMZ09332B
Rev. 0, 8/2015
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMZ09332BT1
High Efficiency/Linearity Amplifier
The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE
wireless broadband applications. It provides exceptional linearity for LTE and
W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to
23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply
voltage of 3 to 5 volts. The amplifier requires minimal external matching and
offers state--of--the--art reliability, ruggedness, temperature stability and ESD
performance.
 Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
(mA)
Test Signal
748 MHz
23
30.9
–49.6
315
W--CDMA
942 MHz
22
27.1
–50.4
240
W--CDMA
130–1000 MHz, 30 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 3  3
 Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA
Pout
(dBm)
Gps
(dB)
PAE
(%)
450 MHz
32.3
30.3 @ 3.6 V
37.2
26.3 @ 3.6 V
45.5 @ 5 V
53.7 @ 3.6 V
CW
760 MHz
32.2
30.8
40.0 @ 5 V
CW
Frequency
Test Signal
Features
 Frequency: 130–1000 MHz
 P1dB: 33 dBm, 450 to 1000 MHz
 OIP3: up to 48 dBm @ 900 MHz
 Excellent Linearity
 Active Bias Control (adjustable externally)
 Single 3 to 5 V Supply
 Single--ended Power Detector
 Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package
Power
VBA1 VBA2 VBIAS Down
VCC1
ACTIVE BIAS WITH
POWER DOWN
RFin
INTERSTAGE
MATCH
INPUT
PREMATCH
OUTPUT
PREMATCH
VCC2/
RFout
OUTPUT POWER
DETECTOR
PDET
Figure 1. Functional Block Diagram
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ09332BT1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Total Supply Current
ICC
1200
mA
RF Input Power
Pin
29
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Junction Temperature
TJ
175
C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 93C, VCC1 = VCC2 = VBIAS = 5 Vdc
RJC
Stage 1
Stage 2
C/W
51
26
Table 3. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 760 MHz, TA = 25C, 50 ohm system, in Freescale PA Driver
Application Circuit)
Symbol
Min
Typ
Max
Unit
Gp
28.7
30.5
—
dB
Input Return Loss (S11)
IRL
—
–12
—
dB
Output Return Loss (S22)
ORL
—
–12
—
dB
Power Output @ 1dB Compression
P1dB
—
32.8
—
dBm
Intercept Point, Two--Tone CW
OIP3
—
43
—
dBm
Characteristic
Small--Signal Gain (S21)
Power Down Voltage
Bias “On”
Bias “Off”
0
1.4
—
—
1.0
2.0
V
Power Down Current
Bias “On”
Bias “Off”
0
0.018
—
—
0
1.38
mA
Supply Current
ICQ
88
108
128
mA
Supply Voltage
VCC
—
5
—
V
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
1
260
C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 6. Ordering Information
Device
MMZ09332BT1
Tape and Reel Information
Package
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
QFN 3  3
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Power
VBA2 VCC1 Down
12 11 10
VBA1
1
9
VCC2/RFout
VBIAS
2
8
VCC2/RFout
RFin
3
7
VCC2/RFout
4
5
6
N.C. N.C. PDET
Figure 2. Pin Connections
MMZ09332BT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION
VBIAS
C10
VCC1
C9
C14
PDC
L2
C12
C11
C7
R2
L3
12
11
C8
R1
VCC2
10
1
C15
9
RF
OUTPUT
BIAS CIRCUIT
C3
2
RF
INPUT
C1
L4
8
C4
C6
C5
7
3
L1
C16
C2
4
5
6
PDET
C13
Figure 3. MMZ09332BT1 Test Circuit Schematic
Table 7. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
6.8 pF Chip Capacitor
GJM1555C1H6R8DB01ND
Murata
C2
2.4 pF Chip Capacitor
GJM1555C1H2R4DB01ND
Murata
C3
220 pF Chip Capacitor
GRM1555C1H221GA01ND
Murata
C4
4.7 pF Chip Capacitor
GJM1555C1H4R7DB01ND
Murata
C5
8.2 pF Chip Capacitor
GJM1555C1H8R2DB01ND
Murata
C6, C7, C13
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
2.2 pF Chip Capacitor
GJM1555C1H2R2DB01ND
Murata
C9, C11, C15
1000 pF Chip Capacitors
GRM1555C1H102JA01ND
Murata
C10, C14
1 F Chip Capacitors
GRM188R61A105KE15ND
Murata
C12
3.9 pF Chip Capacitor
GJM1555C1H3R9DB01ND
Murata
C16
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
3.3 nH Chip Inductor
0402CS--3N3XJLU
Coilcraft
L2, L3
22 nH Chip Inductors
LL1608--FH22NK
Toko
L4
1.8 nH Chip Inductor
0402CS--1N8XJLW
Coilcraft
R1
1.1 K, 1/16 W Chip Resistor
RC0402JR--071K1P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
3
C10
VCC2
PDC
VCC1
VBIAS(1)
50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION
C14
C16
C11
C9
C15
L3
L2
R2
RFIN
C8
C12
R1
RFOUT
C7
C6
C1 L1
C2
C3
C13
C4
L4
QFN 33--12S
Rev. 2B
C5
PDET
M70506
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 4. MMZ09332BT1 Test Circuit Component Layout
Table 7. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
6.8 pF Chip Capacitor
GJM1555C1H6R8DB01ND
Murata
C2
2.4 pF Chip Capacitor
GJM1555C1H2R4DB01ND
Murata
C3
220 pF Chip Capacitor
GRM1555C1H221GA01ND
Murata
C4
4.7 pF Chip Capacitor
GJM1555C1H4R7DB01ND
Murata
C5
8.2 pF Chip Capacitor
GJM1555C1H8R2DB01ND
Murata
C6, C7, C13
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
2.2 pF Chip Capacitor
GJM1555C1H2R2DB01ND
Murata
C9, C11, C15
1000 pF Chip Capacitors
GRM1555C1H102JA01ND
Murata
C10, C14
1 F Chip Capacitors
GRM188R61A105KE15ND
Murata
C12
3.9 pF Chip Capacitor
GJM1555C1H3R9DB01ND
Murata
C16
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
3.3 nH Chip Inductor
0402CS--3N3XJLU
Coilcraft
L2, L3
22 nH Chip Inductors
LL1608--FH22NK
Toko
L4
1.8 nH Chip Inductor
0402CS--1N8XJLW
Coilcraft
R1
1.1 K, 1/16 W Chip Resistor
RC0402JR--071K1P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09332BT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION
0
32
30
–5
28
26
S21 (dB)
S11 (dB)
–10
–15
–20
24
22
20
–25
–30
700
750
800
850
900
950
1000
1050
VCC1 = VCC2 = VBIAS = 5 Vdc
18
VCC1 = VCC2 = VBIAS = 5 Vdc
16
700
1100
750
800
850
900
950
1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency
Figure 6. S21 versus Frequency
1050
1100
0
–5
S22 (dB)
–10
–15
–20
–25
–30
–35
700
VCC1 = VCC2 = VBIAS = 5 Vdc
750
800
850
900
950
1000
1050
1100
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION
–33
300
–36
–39
ACPR (dBc)
–42
ICC, COLLECTOR CURRENT (mA)
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal
3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset
–45
–48
–51
–54
–57
–60
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal
3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset
250
200
150
ICC2
100
ICC1
50
–63
–66
10
12
14
16
18
20
22
24
0
26
10
14
12
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Output Power
Figure 9. Stage Collector Current versus
Output Power
26
30
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal
3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset
Gps, POWER GAIN (dB)
29
28
27
26
25
24
23
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
MMZ09332BT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION
VBIAS
VCC1
C9
PDC
L2
C12
C11
C7
R2
L3
12
11
C8
R1
VCC2
10
1
9
RF
OUTPUT
BIAS CIRCUIT
C3
2
RF
INPUT
C1
R3
8
C4
C6
C5
7
3
L1
C14
C10
C2
4
5
6
PDET
C13
Figure 11. MMZ09332BT1 Test Circuit Schematic
Table 8. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C12
7.5 pF Chip Capacitors
04023J7R5BBS
AVX
C2
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C3
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C4
4.7 pF Chip Capacitor
04023J4R7BBS
AVX
C5
12 pF Chip Capacitor
04025A120JAT2A
AVX
C6, C7, C13
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
6.8 pF Chip Capacitor
06033J6R8BBS
Murata
C9, C11
1 F Chip Capacitors
GRM155R61A105KE15ND
Murata
C10
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
C14
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
5.6 nH Chip Inductor
LL1005--FHL5N6S
Toko
L2
22 nH Chip Inductor
LL1608--FH22N0K
Toko
L3
18 nH Chip Inductor
0603HC--18NXJLW
Coilcraft
R1
1.1 K Chip Resistor
RC0402JR--071K1P
Yageo
R2
2.0 K Chip Resistor
RC0402JR--072KP
Yageo
R3
0  Chip Resistor
RC0402JR--070RP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
7
VCC2
PDC
VCC1
VBIAS(1)
50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION
C11
C14
C10
C9
L2
L3
R2
RFIN
C12
R1
RFOUT
C7
C8
C6
C1 L1 C2
C3
C13
C4
C5
R3
QFN 33--12S
Rev. 2B
PDET
M70506
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 12. MMZ09332BT1 Test Circuit Component Layout
Table 8. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C12
7.5 pF Chip Capacitors
04023J7R5BBS
AVX
C2
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C3
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C4
4.7 pF Chip Capacitor
04023J4R7BBS
AVX
C5
12 pF Chip Capacitor
04025A120JAT2A
AVX
C6, C7, C13
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
6.8 pF Chip Capacitor
06033J6R8BBS
Murata
C9, C11
1 F Chip Capacitors
GRM155R61A105KE15ND
Murata
C10
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
C14
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
5.6 nH Chip Inductor
LL1005--FHL5N6S
Toko
L2
22 nH Chip Inductor
LL1608--FH22N0K
Toko
L3
18 nH Chip Inductor
0603HC--18NXJLW
Coilcraft
R1
1.1 K Chip Resistor
RC0402JR--071K1P
Yageo
R2
2.0 K Chip Resistor
RC0402JR--072KP
Yageo
R3
0  Chip Resistor
RC0402JR--070RP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
(Test Circuit Component Designations and Values table repeated for reference.)
MTL
MMZ09332BT1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION
0
34
–5
32
–10
30
S21 (dB)
S11 (dB)
–15
–20
–25
26
24
–30
22
–35
–40
600
28
VCC1 = VCC2 = VBIAS = 5 Vdc
650
700
750
800
850
20
600
900
VCC1 = VCC2 = VBIAS = 5 Vdc
650
700
750
800
850
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 13. S11 versus Frequency
Figure 14. S21 versus Frequency
900
–3
–6
S22 (dB)
–9
–12
–15
–18
–21
600
VCC1 = VCC2 = VBIAS = 5 Vdc
650
700
750
800
850
900
f, FREQUENCY (MHz)
Figure 15. S22 versus Frequency
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
9
50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION
–39
400
ACPR (dBc)
–42
ICC, COLLECTOR CURRENT (mA)
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz
10 MHz LTE 3GPP TM1.1 Unclipped Test Signal
9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset
–45
–48
–51
–54
10
12
14
16
18
20
22
24
300
250
ICC2
200
150
ICC1
100
50
0
26
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz
10 MHz LTE 3GPP TM1.1 Unclipped Test Signal
9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset
350
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 16. ACPR versus Output Power
Figure 17. Stage Collector Current versus
Output Power
26
33
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz
10 MHz LTE 3GPP TM1.1 Unclipped Test Signal
9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset
Gps, POWER GAIN (dB)
32
31
30
29
28
27
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Figure 18. Power Gain versus Output Power
MMZ09332BT1
10
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION
VBIAS
VCC1
C9
PDC
L2
C12
C11
C7
R2
L3
12
11
VCC2
10
1
9
RF
OUTPUT
BIAS CIRCUIT
C2
2
RF
INPUT
L4
8
C3
C6
C4
7
3
L1
C1
C10
C8
R1
L5
4
5
6
PDET
C5
Figure 19. MMZ09332BT1 Test Circuit Schematic
Table 9. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
5.6 pF Chip Capacitor
GJM1555C1H5R6JB01ND
Murata
C2
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C3
4.7 pF Chip Capacitor
GJM1555C1H4R7DB01ND
Murata
C4
10 pF Chip Capacitor
GJM1555C1H100JB01ND
Murata
C5, C6, C7
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
C9, C11
1 F Chip Capacitors
GRM188R61A105KA61ND
Murata
C10
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
C12
3.3 pF Chip Capacitor
GJM1555C1H3R3CB01ND
Murata
L1
4.7 nH Chip Inductor
LL1005--FHL4N7S
Toko
L2
12 nH Chip Inductor
LL1608--FH12N0K
Toko
L3
22 nH Chip Inductor
0603HC--22NXJLW
Coilcraft
L4
2.2 nH Chip Inductor
LL1608--FH2N2K
Toko
L5
5.6 nH Chip Inductor
LL1005--FHL5N6S
Toko
R1
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
11
VCC2
PDC
VCC1
VBIAS(1)
50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION
C11
C10
C8
C9
L2
L3
R2
RFIN
RFOUT
R1
C7
C12
C6
L5
C1 L1
C5
C2 C3 L4 C4
QFN 33--12S
Rev. 2B
PDET
M70506
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, BA2 and VBIAS [Device].
Figure 20. MMZ09332BT1 Test Circuit Component Layout
Table 9. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
5.6 pF Chip Capacitor
GJM1555C1H5R6JB01ND
Murata
C2
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C3
4.7 pF Chip Capacitor
GJM1555C1H4R7DB01ND
Murata
C4
10 pF Chip Capacitor
GJM1555C1H100JB01ND
Murata
C5, C6, C7
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
C9, C11
1 F Chip Capacitors
GRM188R61A105KA61ND
Murata
C10
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
C12
3.3 pF Chip Capacitor
GJM1555C1H3R3CB01ND
Murata
L1
4.7 nH Chip Inductor
LL1005--FHL4N7S
Toko
L2
12 nH Chip Inductor
LL1608--FH12N0K
Toko
L3
22 nH Chip Inductor
0603HC--22NXJLW
Coilcraft
L4
2.2 nH Chip Inductor
LL1608--FH2N2K
Toko
L5
5.6 nH Chip Inductor
LL1005--FHL5N6S
Toko
R1
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09332BT1
12
RF Device Data
Freescale Semiconductor, Inc.
–2
36
–6
34
–10
32
–14
30
S21 (dB)
S11 (dB)
50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION
–40C
–18
–22
–26
–30
700
85C
28
24
VCC1 = VCC2 = VBIAS = 5 Vdc
750
25C
26
25C
85C
–40C
800
850
900
22
700
950
VCC1 = VCC2 = VBIAS = 5 Vdc
750
800
850
900
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 21. S11 versus Frequency
versus Temperature
Figure 22. S21 versus Frequency
versus Temperature
950
–6
S22 (dB)
–8
–10
–12
25C
85C
–40C
–14
–16
700
VCC1 = VCC2 = VBIAS = 5 Vdc
750
800
850
900
950
f, FREQUENCY (MHz)
Figure 23. S22 versus Frequency
versus Temperature
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
13
50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION
38
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz
900
800
700
85C
600
500
25C
400
–40C
300
ICC2
200
25C
18
20
22
24
–40C
26
28
30
–40C
34
25C
32
85C
30
28
26
85C
ICC1
100
0
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz
CW Signal
36
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
1000
24
34
32
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 24. Stage Collector Current versus
Output Power versus Temperature
Figure 25. Power Gain versus Output Power
versus Temperature
34
4
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz
CW Signal
PDET, POWER DETECTOR (V)
3.6
3.2
2.8
2.4
85C
2
25C
1.6
–40C
1.2
0.8
0.4
0
18
20
22
24
26
28
30
32
34
Pout, OUTPUT POWER (dBm)
Figure 26. Power Detector versus Output
Power versus Temperature
MMZ09332BT1
14
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION
VBIAS
VCC1
C3
PDC
L2
C5
C4
C7
R2
L3
12
11
VCC2
10
1
9
RF
OUTPUT
BIAS CIRCUIT
C1
2
RF
INPUT
C10
C9
R1
L5
8
L4
C6
7
3
L1
C2
4
5
6
PDET
C8
Figure 27. MMZ09332BT1 Test Circuit Schematic
Table 10. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C2
18 pF Chip Capacitor
06033J180GBT2A
AVX
C3, C4
1 uF Chip Capacitors
GRM188R61A105KE15ND
Murata
C5
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C6, C7, C8
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C9
1000 pF Chip Capacitor
GRM1555C1H102JA01ND
Murata
C10
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
3.9 nH Chip Inductor
LL1608--FH3N9K
Toko
L2
5.6 nH Chip Inductor
LL1608--FH5N6K
Toko
L3
12 nH Chip Inductor
LL1608--FH12NK
Toko
L4
22 nH Chip Inductor
LL1608--FH22NK
Toko
L5
5.6 nH Chip Inductor
LL1608--FH5N6K
Toko
R1
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
15
VCC2
PDC
VCC1
VBIAS(1)
50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION
C10
C9
C4
C3
L3
L2
R2
RFIN
C5
R1
C7
RFOUT
C6
L1
C8 C1 L4 L5 C2
QFN 33--12S
Rev. 2B
PDET
M70506
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 28. MMZ09332BT1 Test Circuit Component Layout
Table 10. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C2
18 pF Chip Capacitor
06033J180GBT2A
AVX
C3, C4
1 uF Chip Capacitors
GRM188R61A105KE15ND
Murata
C5
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C6, C7, C8
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C9
1000 pF Chip Capacitor
GRM1555C1H102JA01ND
Murata
C10
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
L1
3.9 nH Chip Inductor
LL1608--FH3N9K
Toko
L2
5.6 nH Chip Inductor
LL1608--FH5N6K
Toko
L3
12 nH Chip Inductor
LL1608--FH12NK
Toko
L4
22 nH Chip Inductor
LL1608--FH22NK
Toko
L5
5.6 nH Chip Inductor
LL1608--FH5N6K
Toko
R1
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
R2
2.0 K, 1/16 W Chip Resistor
RC0402JR--072KP
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09332BT1
16
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION
0
40
38
–5
36
34
S21 (dB)
S11 (dB)
–10
–15
–20
30
28
26
24
–25
350
400
450
500
550
VCC1 = VCC2 = VBIAS = 5 Vdc
22
VCC1 = VCC2 = VBIAS = 5 Vdc
–30
300
32
20
300
600
350
400
450
500
550
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 29. S11 versus Frequency
Figure 30. S21 versus Frequency
600
0
–5
S22 (dB)
–10
–15
–20
–25
–30
–35
300
VCC1 = VCC2 = VBIAS = 5 Vdc
350
400
450
500
550
600
f, FREQUENCY (MHz)
Figure 31. S22 versus Frequency
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
17
50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION
40
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz
CW Signal
900
800
700
600
500
400
ICC2
300
200
100
0
22
24
26
30
28
38
37
36
35
34
33
ICC1
20
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz
CW Signal
39
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
1000
32
34
32
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 32. Stage Collector Current versus
Output Power
Figure 33. Power Gain versus Output Power
34
4
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz
CW Signal
PDET, POWER DETECTOR (V)
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
20
22
24
26
28
30
32
34
Pout, OUTPUT POWER (dBm)
Figure 34. Power Detector versus Output Power
MMZ09332BT1
18
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION
VBIAS
VCC1
C8
PDC
L2
C10
C9
C7
R2
L3
12
11
VCC2
10
1
9
RF
OUTPUT
BIAS CIRCUIT
C3
2
RF
INPUT
L4
8
L5
C6
C4
7
3
L1
C1
C12
C11
R1
C2
4
5
6
PDET
C5
Figure 35. MMZ09332BT1 Test Circuit Schematic
Table 11. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
15 pF Chip Capacitor
GJM1555C1H150JB01ND
Murata
C2
27 pF Chip Capacitor
GJM1555C1H270JB01ND
Murata
C3
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C4
33 pF Chip Capacitor
GJM1555C1H330JB01ND
Murata
C5, C6, C7
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8, C9
1 F Chip Capacitors
GRM188R61A105KA61ND
Murata
C10
3.3 pF Chip Capacitor
GJM1555C1H3R3CB01ND
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
C12
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
L1
22 nH Chip Inductor
LL1005--FH22NK
Toko
L2, L3
33 nH Chip Inductors
LL1608--FH33NK
Toko
L4
33 nH Chip Inductor
LL1608--FSL33NJ
Toko
L5
33 nH Chip Inductor
LL1005--FH33NK
Toko
R1
2.2 K, 1/16 W Chip Resistor
RC0402JR--072K2P
Yageo
R2
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
19
VCC2
PDC
VCC1
VBIAS(1)
50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION
C11
C12
C9
C8
L2
L3
R2
RFIN
C10
R1
RFOUT
C7
C6
C1 L1 C2
C5 C3 L5
L4
QFN 33--12S
Rev. 2B
C4
PDET
M70506
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 36. MMZ09332BT1 Test Circuit Component Layout
Table 11. MMZ09332BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
15 pF Chip Capacitor
GJM1555C1H150JB01ND
Murata
C2
27 pF Chip Capacitor
GJM1555C1H270JB01ND
Murata
C3
220 pF Chip Capacitor
GRM1555C1H221JA01ND
Murata
C4
33 pF Chip Capacitor
GJM1555C1H330JB01ND
Murata
C5, C6, C7
100 pF Chip Capacitors
GRM1555C1H101JA01ND
Murata
C8, C9
1 F Chip Capacitors
GRM188R61A105KA61ND
Murata
C10
3.3 pF Chip Capacitor
GJM1555C1H3R3CB01ND
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19ND
Murata
C12
1000 pF Chip Capacitor
GRM155R71H102KA01ND
Murata
L1
22 nH Chip Inductor
LL1005--FH22NK
Toko
L2, L3
33 nH Chip Inductors
LL1608--FH33NK
Toko
L4
33 nH Chip Inductor
LL1608--FSL33NJ
Toko
L5
33 nH Chip Inductor
LL1005--FH33NK
Toko
R1
2.2 K, 1/16 W Chip Resistor
RC0402JR--072K2P
Yageo
R2
1.8 K, 1/16 W Chip Resistor
RC0402JR--071K8P
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09332BT1
20
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION
0
34
–5
31
28
S21 (dB)
S11 (dB)
–10
–15
–20
22
19
–25
16
VCC1 = VCC2 = VBIAS = 5 Vdc
–30
25
50
90
130
170
210
250
13
VCC1 = VCC2 = VBIAS = 5 Vdc
50
90
130
170
210
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 37. S11 versus Frequency
Figure 38. S21 versus Frequency
250
0
–5
S22 (dB)
–10
–15
–20
–25
VCC1 = VCC2 = VBIAS = 5 Vdc
–30
50
90
130
170
210
250
f, FREQUENCY (MHz)
Figure 39. S22 versus Frequency
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
21
50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION
34
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 155 MHz
CW Signal
600
500
400
ICC2
300
200
100
0
20
22
32
31
30
29
28
27
ICC1
18
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 155 MHz
CW Signal
33
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
700
24
26
28
30
26
18
20
22
24
26
28
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 40. Stage Collector Current versus
Output Power
Figure 41. Power Gain versus Output Power
30
MMZ09332BT1
22
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 42. PCB Pad Layout for QFN 3  3
MA06
WLYW
Figure 43. Product Marking
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
23
PACKAGE DIMENSIONS
MMZ09332BT1
24
RF Device Data
Freescale Semiconductor, Inc.
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
25
MMZ09332BT1
26
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2015
Description
 Initial Release of Data Sheet
MMZ09332BT1
RF Device Data
Freescale Semiconductor, Inc.
27
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E 2015 Freescale Semiconductor Inc.
MMZ09332BT1
Document Number: MMZ09332B
Rev. 0, 8/2015
28
RF Device Data
Freescale Semiconductor, Inc.
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