Data Sheet

Document Number: MMZ25332B4
Rev. 0, 12/2015
Freescale Semiconductor
Technical Data
2 W High Gain Power Amplifier for
Cellular Infrastructure
InGaP GaAs HBT
The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver
and pre--driver applications for macro and micro base stations and final stage
applications for small cells. Its versatile design allows operation in any
frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB.
The device operates off a 5 V supply, and its bias currents and portions of the
matching networks are adjustable for optimum performance in any specific
application. It is housed in a QFN 4 x 4 surface mount package which allows for
maximum via hole pattern. The MMZ25332B4 offers exceptional reliability,
ruggedness and ESD performance.
 Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
(mA)
Test Signal
2140 MHz
21.7
26.5
–48
441
W--CDMA
2350 MHz
21.5
26.6
–48
446
LTE
2600 MHz
22.5
26.7
–48
453
LTE
MMZ25332B4T1
1500–2700 MHz, 26.5 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 4  4
Features
 Frequency: 1500–2700 MHz
 P1dB: 33 dBm @ 2500 MHz
 Power Gain: 26.5 dB @ 2500 MHz
 OIP3: 48 dBm @ 2500 MHz






EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
Active Bias Control (adjustable externally)
Power Down Control via VBIAS
Single 3 to 5 Volt Supply
Single--ended Power Detector
Cost--effective 24--Pin, 4 mm QFN Surface Mount Plastic Package
VCC1
PDET
VCC2/RFout
VCC2/RFout
RFin
VCC2/RFout
BIAS
CIRCUIT
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ25332B4T1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
1200
mA
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Junction Temperature
TJ
175
C
Symbol
Value (1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, VCC1 = VCC2 = VBIAS = 5 Vdc
RJC
Stage 1
Stage 2
Unit
C/W
70
22
Table 3. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
Input Return Loss (S11)
IRL
23.5
26
—
dB
—
–13
—
Output Return Loss (S22)
dB
ORL
—
–18
—
dB
Power Output @ 1dB Compression
P1dB
—
33
—
dBm
Intercept Point, Two--Tone CW
OIP3
—
48
—
dBm
Supply Current
ICQ
368
392
415
mA
Supply Voltage
VCC
—
5
—
V
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
1
260
C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 6. Ordering Information
Device
MMZ25332B4T1
Tape and Reel Information
Package
T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel
QFN 4  4
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
N.C. N.C. N.C. N.C. VCC1 PDET
24
23
22
21
20
19
N.C.
1
18
N.C.
2
17
N.C.
3
16
RFin
4
15
N.C.
5
14
N.C.
N.C.
6
13
N.C.
7
8
9
10
11
N.C.
VCC2/RFout
VCC2/RFout
VCC2/RFout
12
N.C. VBA1 VBA2 VBIAS N.C. N.C.
(Top View)
Note: Exposed backside of the package is DC and RF
ground. N.C. can be connected to GND.
Figure 2. Pin Connections
MMZ25332B4T1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
VCC1
C8
24
23
PDET
L1
C9
22
C10
C5
21
20
19
L2
1
18
2
17
3
16
4
15
VCC2
C12
RF
INPUT
C11
RF
OUTPUT
Z1
C1
C4
5
14
ACTIVE BIAS CIRCUIT
6
C2
C3
13
7
8
9
10
R1
11
12
R2
VBIAS
C6
Z1
C7
0.074  0.02 Microstrip
Figure 3. MMZ25332B4T1 Test Circuit Schematic
Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
04023J1R8BBS
AVX
C5
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C6, C9, C12
1000 pF Chip Capacitors
GCM155R71E103KA37
Murata
C7, C8
1 uF Chip Capacitors
GRM155R61A105KE15
Murata
C10
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
6.8 nH Chip Inductor
0603HC-6N8X
Coilcraft
R1
1200 , 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
VCC2
VDECT
VCC1
C11
C8
C9
C10
C12
C5
RFIN
L2
RFOUT
L1
C4
C1
C2
C3
C6
C7
R1 R2
QFN 44--24D
Rev. 0
VBIAS(1)
MG3044
PCB actual size: 1.30  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 4. MMZ25332B4T1 Test Circuit Component Layout
Table 7. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
04023J1R8BBS
AVX
C5
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C6, C9, C12
1000 pF Chip Capacitors
GCM155R71E103KA37
Murata
C7, C8
1 uF Chip Capacitors
GRM155R61A105KE15
Murata
C10
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
6.8 nH Chip Inductor
0603HC-6N8X
Coilcraft
R1
1200 , 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
32
–8
30
–10
–40C
–14
S21 (dB)
S11 (dB)
28
–12
85C
–16
–18
2400
25C
26
85C
24
–40C
25C
22
VCC1 = VCC2 = VBIAS = 5 Vdc
2480
2560
2640
2720
20
2400
2800
VCC1 = VCC2 = VBIAS = 5 Vdc
2480
2560
2640
2720
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2800
–8
S22 (dB)
–12
–16
–40C
–20
85C
–24
25C
–28
2400
2480
2560
VCC1 = VCC2 = VBIAS = 5 Vdc
2640
2720
2800
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
450
–33
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz
–36 Single--Carrier W--CDMA 3GPP TM1 Unclipped
–39
ICC, COLLECTOR CURRENT (mA)
–45
–48
–51
–40C
–57
85C
–60
–63
10
32
30
25C
12
14
16
18
20
22
24
26
Gps, POWER GAIN (dB)
300
25C
ICC2
85C
ICC1
25C
–40C
250
200
150
100
--40C
85C
12
14
16
18
22
20
24
26
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Output Power
versus Temperature
Figure 9. Stage Collector Current versus Output
Power versus Temperature
2
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
28
25C
26
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
1.8
–40C
85C
24
22
20
10
350
50
10
PDET, POWER DETECTOR (V)
ACPR (dBc)
–42
–54
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
400
1.6
Minimum Temperature Variation
1.4
1.2
–40C
1
85C
0.8
25C
0.6
0.4
0.2
12
14
16
18
20
22
24
26
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
versus Temperature
Figure 11. Power Detector versus Output Power
versus Temperature
MMZ25332B4T1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
VCC1
C8
24
23
PDET
L1
C9
22
C6
C5
21
20
19
L2
1
18
2
17
3
16
4
15
VCC2
C10
RF
INPUT
C11
RF
OUTPUT
Z1
C1
C4
5
C2
14
ACTIVE BIAS CIRCUIT
6
C3
13
7
8
9
R1
10
11
12
R2
VBIAS
C7
Z1
0.12  0.02 Microstrip
Figure 12. MMZ25332B4T1 Test Circuit Schematic
Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C3
2.2 pF Chip Capacitor
04023J2R2BBS
AVX
C5
6.8 pF Chip Capacitor
04023J6R8BBS
AVX
C6
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C7, C8
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C9, C10
1000 pF Chip Capacitors
GCM155R71E102KA37
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
5.6 nH Chip Inductor
LL1608-FSL5N6S
Toko
R1
1.2 k, 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
VCC2
VDECT
VCC1
C11
C8
C9
C6
C10
C5
RFIN
L2
RFOUT
L1
C4
C1
C2
C3
C7
R1 R2
QFN 44--24D
Rev. 0
VBIAS(1)
MG3044
PCB actual size: 1.30  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 13. MMZ25332B4T1 Test Circuit Component Layout
Table 8. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2.4 pF Chip Capacitor
04023J2R4BBS
AVX
C3
2.2 pF Chip Capacitor
04023J2R2BBS
AVX
C5
6.8 pF Chip Capacitor
04023J6R8BBS
AVX
C6
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C7, C8
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C9, C10
1000 pF Chip Capacitors
GCM155R71E102KA37
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
5.6 nH Chip Inductor
LL1608-FSL5N6S
Toko
R1
1.2 k, 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
–12
29
–13
28
S21 (dB)
S11 (dB)
–14
–15
27
26
–16
25
–17
–18
1900
VCC1 = VCC2 = VBIAS = 5 Vdc
VCC1 = VCC2 = VBIAS = 5 Vdc
2100
2000
2200
24
1900
2300
2000
2100
2200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 14. S11 versus Frequency
Figure 15. S21 versus Frequency
2300
–8
–12
S22 (dB)
–16
–20
–24
VCC1 = VCC2 = VBIAS = 5 Vdc
–28
1900
2000
2100
2200
2300
f, FREQUENCY (MHz)
Figure 16. S22 versus Frequency
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
9
–40
–42 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz
–44 Single--Carrier W--CDMA 3GPP TM1 Unclipped
–46
–48
–50
–52
–54
–56
–58
–60
–62
–64
–66
10
12
14
16
18
20
28
500
22
24
400
350
ICC2
300
250
200
150
ICC1
100
50
0
10
26
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 17. ACPR versus Output Power
Figure 18. Stage Collector Current versus
Output Power
26
2
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
1.8
PDET, POWER DETECTOR (V)
27
Gps, POWER GAIN (dB)
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
450
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
26
25
24
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
23
10
12
14
16
18
20
22
24
26
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 19. Power Gain versus Output Power
Figure 20. Power Detector versus Output Power
MMZ25332B4T1
10
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
VCC1
C8
24
23
PDET
L1
C9
22
C6
C5
21
20
19
L2
1
18
2
17
3
16
4
15
VCC2
C10
RF
INPUT
C11
RF
OUTPUT
Z1
C1
C4
5
C2
14
ACTIVE BIAS CIRCUIT
6
C3
13
7
8
9
R1
10
11
12
R2
VBIAS
C7
Z1
0.074  0.02 Microstrip
Figure 21. MMZ25332B4T1 Test Circuit Schematic
Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2.0 pF Chip Capacitor
04023J2R4BBS
AVX
C3
2.2 pF Chip Capacitor
04023J2R2BBS
AVX
C5
8.2 pF Chip Capacitor
04023J6R8BBS
AVX
C6
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C7, C8
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C9, C10
1000 pF Chip Capacitors
GCM155R71E102KA37
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
6.8 nH Chip Inductor
LL1608-FSL5N6S
Toko
R1
1.2 k, 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
11
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
VCC2
VDECT
VCC1
C11
C8
C9
C6
C10
C5
RFIN
L2
RFOUT
L1
C4
C1
C2
C3
C7
R1 R2
QFN 44--24D
Rev. 0
VBIAS(1)
MG3044
PCB actual size: 1.30  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 22. MMZ25332B4T1 Test Circuit Component Layout
Table 9. MMZ25332B4T1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023J22R0BBS
AVX
C2
2.0 pF Chip Capacitor
04023J2R4BBS
AVX
C3
2.2 pF Chip Capacitor
04023J2R2BBS
AVX
C5
8.2 pF Chip Capacitor
04023J6R8BBS
AVX
C6
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C7, C8
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C9, C10
1000 pF Chip Capacitors
GCM155R71E102KA37
Murata
C11
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
L1
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L2
6.8 nH Chip Inductor
LL1608-FSL5N6S
Toko
R1
1.2 k, 1/16 W Chip Resistor
RC0402JR--071K2L
Yageo
R2
330 , 1/16 W Chip Resistor
RC0402JR--07330L
Yageo
PCB
Rogers RO4350B, 0.010, r = 3.66
MG3044
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25332B4T1
12
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
–12
29
–13
28
S21 (dB)
S11 (dB)
–14
–15
27
26
–16
25
–17
–18
2200
VCC1 = VCC2 = VBIAS = 5 Vdc
VCC1 = VCC2 = VBIAS = 5 Vdc
2250
2300
2350
2400
2450
2500
24
2200
2250
2300
2350
2400
2450
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 23. S11 versus Frequency
Figure 24. S21 versus Frequency
2500
–12
–16
S22 (dB)
–20
–24
–28
VCC1 = VCC2 = VBIAS = 5 Vdc
–32
2200
2300
2400
2500
f, FREQUENCY (MHz)
Figure 25. S22 versus Frequency
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
13
50 OHM APPLICATION CIRCUIT: 2300–2400 MHz, 5 VOLT OPERATION
500
–40
–42 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
–44
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
–46
–48
–50
–52
–54
–56
–58
–60
–62
10
12
14
16
18
20
22
ICC2
300
250
200
150
ICC1
100
50
12
14
16
18
20
22
Pout, OUTPUT POWER (dBm)
Figure 26. ACPR versus Output Power
Figure 27. Stage Collector Current versus
Output Power
24
1.6
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
25
24
12
14
16
18
20
22
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
1.4
PDET, POWER DETECTOR (V)
Gps, POWER GAIN (dB)
350
Pout, OUTPUT POWER (dBm)
26
23
10
400
0
10
24
28
27
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2350 MHz
Single--Carrier LTE--20 MHz 3GPP TM1.1, PAR = 9.8 dB
450
24
1.2
1
0.8
0.6
0.4
0.2
0
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 28. Power Gain versus Output Power
Figure 29. Power Detector versus Output Power
MMZ25332B4T1
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RF Device Data
Freescale Semiconductor, Inc.
0.50
3.00
4.40
0.30
2.6  2.6 solder pad with thermal
via structure. All dimensions in mm.
Figure 30. PCB Pad Layout for 24--Lead QFN 4  4
MA11
WLYW
Figure 31. Product Marking
MMZ25332B4T1
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Freescale Semiconductor, Inc.
15
PACKAGE DIMENSIONS
MMZ25332B4T1
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RF Device Data
Freescale Semiconductor, Inc.
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
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MMZ25332B4T1
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RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2015
Description
 Initial Release of Data Sheet
MMZ25332B4T1
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2015 Freescale Semiconductor, Inc.
MMZ25332B4T1
Document Number: MMZ25332B4
Rev. 0, 12/2015
20
RF Device Data
Freescale Semiconductor, Inc.
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