Data Sheet

ON
8
BGA7130
HV
S
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Rev. 1 — 9 October 2012
Product data sheet
1. General description
The MMIC is a single-stage amplifier, offered in a leadless surface-mount package. It
delivers 30 dBm output power at 1 dB gain compression and a superior performance up to
2700 MHz. Its power saving features include simple quiescent current adjustment and
logic-level shutdown control to reduce the supply current to 4 A.
2. Features and benefits






400 MHz to 2700 MHz frequency operating range
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
Power-down
Excellent robustness:
 All pins ESD protected (HBM 6 kV; CDM 2 kV)
 Withstands mismatch of VSWR 50 : 1 through all phases
 Withstands electrical over-stress peaks of 7 V on the supply voltage
3. Applications
In this data sheet two base station applications are described, namely LTE at 750 MHz
and UMTS at 2140 MHz. The BGA7130 is also suited for a range of other applications:
 Wireless infrastructure (base station, repeater, backhaul systems)
 Broadband CPE / MoCA
 Industrial applications
 WLAN / ISM / RFID
 Satellite Master Antenna TV (SMATV)
4. Quick reference data
Table 1.
Quick reference data
4.75 V  VSUP  5.25 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 523  (tolerance 1 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
VSUP
ICC(tot)
Conditions
Min
Typ
Max Unit
supply voltage
[1]
4.75 -
5.25 V
total supply current
[2]
390
450
510
mA
500   R3  4.7 k
[2]
50
-
550
mA
500   R3  4.7 k; pin ENABLE = LOW
[2]
-
4
6
A
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 1.
Quick reference data …continued
4.75 V  VSUP  5.25 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 523  (tolerance 1 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Tcase
case temperature
f
frequency
Conditions
[3]
Min
Typ
Max Unit
40
+25
+85
400
-
2700 MHz
728
748
768
MHz
17
20
23
dB
C
Measured at LTE-750 MHz (see Section 14)
[4]
f
frequency
Gp
power gain
PL(1dB)
output power at 1 dB gain compression 728 MHz  f  768 MHz
27
30.5 -
dBm
IP3O
output third-order intercept point
728 MHz  f  768 MHz;
PL = 19 dBm per tone;
tone spacing = 1 MHz
39
42.5 -
dBm
728 MHz  f  768 MHz
Measured at UMTS-2140 MHz (see Section 14)
[5]
f
frequency
Gp
power gain
PL(1dB)
output power at 1 dB gain compression 2110 MHz  f  2170 MHz
IP3O
output third-order intercept point
[1]
Supply voltage on pins RF_OUT and VCC.
2110 MHz  f  2170 MHz
2110 MHz  f  2170 MHz;
PL = 19 dBm per tone;
tone spacing = 1 MHz
[2]
Current through pins RF_OUT and VCC.
[3]
Tcase is the temperature at the soldering point of the exposed die pad.
[4]
Covering downlink frequency range of eUTRAN bands 11, 13, 14 and 17.
[5]
Covering downlink frequency range of eUTRAN bands 1, 4 and 10.
2110 2140 2170 MHz
9
12
15
dB
27
30
-
dBm
40.5 44
-
dBm
5. Design support
Table 2.
Available design support
Download from the BGA7130 product page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS planned
[1]
Based on Mextram device model.
Device models for AWR Microwave Office
no
[1]
Based on Mextram device model.
Device models for ANSYS Ansoft designer no
[1]
Based on Mextram device model.
SPICE model
[1]
Based on Gummel-Poon device model.
planned
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
See Section 6 and Section 14.
Gerber files
yes
Gerber files of boards provided with the customer evaluation kit.
Solder pattern
yes
[1]
See http://www.nxp.com/models.html.
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
2 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BGA7130
HVSON8
plastic thermal enhanced very thin small outline package;
no leads; 8 terminals; body 3  3  0.85 mm
SOT908-3
OM7941/BGA7130LTE
-
Customer evaluation kit for BGA7130 in a 750 MHz LTE
application [1]
-
OM7942/BGA7130WCDMA
-
Customer evaluation kit for BGA7130 in a 2140 MHz UMTS
application [1]
-
[1]
The customer evaluation kit contains the following:
a) Fully populated and matched RF evaluation board
b) BGA7130 samples
7. Functional diagram
9683
(1$%/( 9&&
%$1'*$3
,1387
0$7&+
/
9,
&219(57(5
5)B287
5)B,1 ,&4B$'-
287387
0$7&+
*1'
5
DDD
Fig 1.
BGA7130
Product data sheet
Functional diagram
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
3 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
8. Pinning information
8.1 Pinning
WHUPLQDO
LQGH[DUHD
QF
5)B287
,&4B$'-
5)B,1
%*$
5)B287
(1$%/(
QF
9&&
DDD
7UDQVSDUHQWWRSYLHZ
Fig 2.
Pin configuration
8.2 Pin description
BGA7130
Product data sheet
Table 4.
Pin description
Symbol
Pin
Description
n.c.
1, 4
not connected [1]
RF_OUT
2, 3
RF output and supply to the amplifier [2]
VCC
5
bias supply voltage [3]
ENABLE
6
enable
RF_IN
7
RF input [2]
ICQ_ADJ
8
quiescent collector current adjustment by an external resistor
GND
exposed die pad
ground [4]
[1]
This pin can be connected to ground.
[2]
This pin requires an external DC-blocking capacitor.
[3]
RF decoupled.
[4]
The exposed die pad of the SOT908-3 also functions as heatsink for the power amplifier.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
4 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
9. Functional description
9.1 Supply current adjustment
The supply current can be adjusted by changing the value of biasing resistor R3 which
connects pin ICQ_ADJ (pin 8) to ground (see Figure 1).
DDD
,&&WRW
P$
5ȍ
VSUP = 5 V; Tamb = 25 C.
Fig 3.
Supply current ICC(tot) as function of biasing resistor R3; typical values
9.2 Enable control
The BGA7130 can be powered down using enable pin 6 (ENABLE). In case this control
function is not needed the enable pin can be connected to the bias supply voltage pin 5
(VCC). The current through the enable pin 6 should never exceed 20 mA as this might
damage the ESD protection circuitry. This can be avoided either by preventing the voltage
on this pin to exceed the supply voltage (VSUP) or by adding a series resistor.
Table 5.
Enable truth table
Logic level on pin ENABLE (pin 6)
Status BGA7130
LOW
powered down
HIGH
powered on
10. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VSUP
supply voltage
Conditions
[1]
digital input voltage
[2][4]
II(dig)
digital input current
[3][4]
ICC(tot)
total supply current
VI(dig)
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
Min
Max
Unit
0.5
+7
V
0
VSUP
V
20
+20
mA
-
1000
mA
© NXP B.V. 2012. All rights reserved.
5 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Pi(RF)
RF input power
f = 750 MHz; switched
-
18
dBm
f = 2140 MHz; switched
-
25
dBm
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
-
6
kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-
2
kV
[1]
Absolute maximum DC voltage on pins RF_OUT, ICQ_ADJ and VCC.
[2]
Absolute maximum DC voltage on pin ENABLE.
[3]
Absolute maximum DC current through pin ENABLE.
[4]
If VI(dig) exceeds VSUP the internal ESD protection circuit can be damaged. The pin ENABLE can be connected to VCC in case the
enable control function is not used (see Section 9.2).
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-case)
thermal resistance from junction to case
Tcase < 85 C
6
K/W
12. Static characteristics
Table 8.
Static characteristics
4.75 V  VSUP  5.25 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 523  (tolerance 1 %); input
and output impedances matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise
specified.
Symbol
VSUP
ICC(tot)
Parameter
Conditions
Min
Product data sheet
Max
Unit
5.25
V
supply voltage
4.75 -
total supply current
[2]
390
450
510
mA
0   R3  5 k
[2]
30
-
550
mA
0   R3  5 k;
pin ENABLE = LOW
[2]
-
4
6
A
Tcase
case temperature
ICC
supply current
40
+25
+85
C
on pin RF_OUT
-
420
-
mA
on pin VCC
-
30
-
mA
[3]
on pin ENABLE
BGA7130
Typ
[1]
VIL
LOW-level input voltage
[4]
VIH
HIGH-level input voltage
[4]
[1]
Supply voltage on pins RF_OUT and VCC.
[2]
Current through pins RF_OUT and VCC.
[3]
Tcase is the temperature at the soldering point of the exposed die pad.
[4]
On digital input pin ENABLE.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
-
-
3
A
0
-
0.7
V
2.5
-
VSUP
V
© NXP B.V. 2012. All rights reserved.
6 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
13. Dynamic characteristics
Table 9.
Dynamic characteristics
4.75 V  VSUP  5.25 V; 40 C  Tcase  85 C; Pi < 20 dBm; R3 = 523  (tolerance 1 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
f
Conditions
Min
Typ
Max
400
-
2700 MHz
728
748
768
MHz
728 MHz  f  768 MHz
17
20
23
dB
728 MHz  f  768 MHz; pin ENABLE = LOW
-
18
-
dB
728 MHz  f  768 MHz
27
30.5
-
dBm
frequency
Unit
Measured at LTE-750 MHz (see Section 14)
[1]
f
frequency
Gp
power gain
PL(1dB)
output power at 1 dB gain
compression
IP3O
output third-order intercept point 728 MHz  f  768 MHz; PL = 15 dBm per tone;
tone spacing = 1 MHz
39
42.5
-
dBm
EVM
error vector magnitude
E-UTRA Test Model (E-TM) 3.1 LTE;
PL(AV) = 20 dBm
-
2
-
%
NF
noise figure
728 MHz  f  768 MHz
-
5
-
dB
RLin
input return loss
728 MHz  f  768 MHz
-
6
-
dB
728 MHz  f  768 MHz; pin ENABLE = LOW
-
1
-
dB
728 MHz  f  768 MHz
-
10
-
dB
728 MHz  f  768 MHz; pin ENABLE = LOW
-
0.5
-
dB
RLout
ISL
output return loss
isolation
728 MHz  f  768 MHz
-
29
-
dB
728 MHz  f  768 MHz; pin ENABLE = LOW
-
18
-
dB
td(pu)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
-
3
-
s
td(pd)
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
-
0.5
-
s
Measured at UMTS-2140 MHz (see Section 14)
f
frequency
Gp
power gain
[2]
2110 2140 2170 MHz
2110 MHz  f  2170 MHz
9
12
15
dB
2110 MHz  f  2170 MHz; pin ENABLE = LOW
-
15
-
dB
2110 MHz  f  2170 MHz
27
30
-
dBm
41
44
-
dBm
-
60
-
dBc
PL(1dB)
output power at 1 dB gain
compression
IP3O
output third-order intercept point 2110 MHz  f  2170 MHz;
PL = 15 dBm per tone; tone spacing = 1 MHz
ACPR
adjacent channel power ratio
2110 MHz  f  2170 MHz
NF
noise figure
2110 MHz  f  2170 MHz
-
5
-
dB
RLin
input return loss
2110 MHz  f  2170 MHz
-
6
-
dB
2110 MHz  f  2170 MHz; pin ENABLE = LOW
-
3
-
dB
2110 MHz  f  2170 MHz
-
10
-
dB
2110 MHz  f  2170 MHz; pin ENABLE = LOW
-
1
-
dB
RLout
output return loss
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
[3]
© NXP B.V. 2012. All rights reserved.
7 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 9.
Dynamic characteristics …continued
4.75 V  VSUP  5.25 V; 40 C  Tcase  85 C; Pi < 20 dBm; R3 = 523  (tolerance 1 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ISL
isolation
2110 MHz  f  2170 MHz
-
24
-
dB
2110 MHz  f  2170 MHz; pin ENABLE = LOW
-
15
-
dB
td(pu)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
-
3
-
s
td(pd)
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
-
0.5
-
s
[1]
Covering downlink frequency range of eUTRAN bands 11, 13, 14 and 17.
[2]
Covering downlink frequency range of eUTRAN bands 1, 4 and 10.
[3]
Two carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7 dB; 5 MHz carrier spacing.
14. Application information
The BGA7130 can be used for a wide variety of applications. This section describes two
example base station applications: LTE at 750 MHz and UMTS at 2140 MHz. It serves as
a pre-driver for the high-power amplifier in the Base Transceiver Station (BTS), see
Figure 4.
,402'
/3)
PL[HU
6(5,'$&
3//
9&2
&/2&.
32:(5$03/,),(5
9*$
7;%3)
%*$ +3$
LVRODWRU
DQWHQQD
7;5;
',*,7$/%$6(%$1'$1'&21752/
/3)
6(54'$&
PL[HU
%3)
9*$
,)PL[HU
DWWHQXDWRU
PL[HU
6(5$'&
GXSOH[HU
3//
9&2
—&
9*$
/3)
,)PL[HU
PL[HU
5;%3)
/1$
/1$
6(5'$&
DQWHQQD
5;
—&
72:(5
02817('
$03/,),(5
3//
9&2
&/2&.
/3)
5;%3)
/1$
/1$
6(5'$&
PL[HU
DDD
Fig 4.
Simplified schematic representation of a Base Transceiver Station (BTS)
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
8 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
The LTE 750 MHz circuit described here is matched for the downlink frequency range of
band 12, 13, 14 and 17 as defined in the evolved UMTS Terrestrial Radio Access Network
(eUTRAN) air interface of Long Term Evolution (LTE) mobile networks. These bands are
used in the United States and are expected to be used in Canada in the future. Band 12,
13 and 14 are commonly referred to as SMH bands.
Table 10.
Covered LTE downlink bands
eUTRAN band
Uplink
Downlink
Region
XII (12) - SMH
698 MHz to 716 MHz
728 MHz to 746 MHz
United States, Canada
XIII (13) - SMH
776 MHz to 787 MHz
746 MHz to 757 MHz
United States, Canada
XIV (14) - SMH
788 MHz to 798 MHz
758 MHz to 768 MHz
United States, Canada
XVII (17)
704 MHz to 716 MHz
734 MHz to 746 MHz
United States, Canada
The UMTS 2140 MHz circuit described here is matched for the downlink frequency range
of band 1, 4 and 10 as defined in the evolved UMTS Terrestrial Radio Access Network
(eUTRAN) air interface of the Universal Mobile Telecommunications System (UMTS)
mobile networks.
Table 11.
Covered UMTS bands
eUTRAN band
Uplink
Downlink
Region
I (1) - UMTS
1920 MHz to 1980 MHz
2110 MHz to 2170 MHz
Japan, Europe, Asia
IV (4) - AWS
1710 MHz to 1755 MHz
2110 MHz to 2155 MHz
United States, Canada,
Latin America
X (10) - UMTS
1710 MHz to 1770 MHz
2110 MHz to 2170 MHz
Uruguay, Ecuador, Peru
14.1 Application board
Customer evaluation boards are available from NXP (see Section 6 “Ordering
information”). The BGA7130 shall be decoupled and matched as depicted in Figure 5. The
ground leads and exposed paddle should be connected directly to the ground plane.
Enough via holes should be provided to connect top and bottom ground planes in the final
application board. Sufficient cooling should be provided preventing the temperature of the
exposed die pad from exceeding 85 C.
The LTE-750 and UMTS-2140 application boards differ in input and output matching
topology have the same input and output matching topology.
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
9 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
,&
(1$%/( 9&&
5
&
&
9,
&219(57(5
%$1'*$3
/
&
;
06/
&
06/
06/
9683
&
5
5)B287
5)B,1 5
/
06/
06/
&
06/
06/
;
,&4B$'-
&
*1'
&
5
DDD
See Table 12 for list of components.
Fig 5.
Application diagram of customer evaluation board for LTE-750 application
(1$%/( 9&&
,&
9683
&
5
%$1'*$3
5
&
&
9,
&219(57(5
/
;
06/
&
06/
5)B287
5)B,1 06/
06/
&
06/
;
,&4B$'-
&
*1'
&
&
5
DDD
See Table 12 for list of components.
Fig 6.
Application diagram of customer evaluation board for UMTS-2140 application
The Printed-Circuit Board (PCB) is a four metal layer substrate board as described in
Figure 7. The width and the gap between the strip-line and ground plane are configured
such that a 50 ohm transmission line is obtained.
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
10 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
WKURXJKYLD
5)DQGDQDORJURXWLQJ
—P&X—P$X
PP52&
5)DQGDQDORJJURXQG
—P&X
PPSUHSHJ
DQDORJURXWLQJ
—P&X
PP)5
5)DQGDQDORJJURXQG
—P&X—P$X
DDD
*1'
*1'
9FF
9VHQVH
(QDEOH
Printed-Circuit Board (PCB) stack build
*1'
Fig 7.
-
5
&
5
&
&
-
-
/
06/
3 210 /
06/
&
&
06/
5
06/
&
. - , +*) ('&% $
06/ 06/
/
& &
06/
5)LQ
5)RXW
5
1;36(0,&21'8&7256
%*$6275HY
DDD
Fig 8.
Top view of populated LTE-750 Printed-Circuit Board (PCB)
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
11 of 27
BGA7130
NXP Semiconductors
*1'
*1'
9FF
9VHQVH
(QDEOH
*1'
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
-
5
&
5
&
&
-
-
/
06/
3 210 /
&
06/
06/
&
&
. - , +*) ('&% $
&
06/
06/
&
5)LQ
5)RXW
5
1;36(0,&21'8&7256
%*$6275HY
Fig 9.
Top view of populated LTE-2140 Printed-Circuit Board (PCB)
Table 12. List of components
See Figure 5 for schematics.
Component
BGA7130
Product data sheet
Description
Value
Remarks
LTE-750
UMTS-2140
C1, C5
capacitor
47 pF
15 pF
C2
capacitor
12 pF
3.3 pF
C3
capacitor
47 pF
0.82 pF
C4
capacitor
10 pF
2.2 pF
C6
capacitor
1 nF
10 nF
C7
capacitor
100 nF
1 F
C8
capacitor
10 F
10 F
IC1
BGA7130
-
-
NXP
MSL1
micro stripline
10.95 mm
10.95 mm
[1]
MSL2
micro stripline
1.5 mm
11.2 mm
[1]
MSL3
micro stripline
8.0 mm
3.3 mm
[1]
MSL4
micro stripline
6.3 mm
8.6 mm
[1]
MSL5
micro stripline
1.9 mm
10.95 mm
[1]
MSL6
micro stripline
2.0 mm
-
[1]
MSL7
micro stripline
10.95 mm
-
[1]
R1
resistor
47 
-
R2
resistor
240 
240 
R3
resistor
523 
523 
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
12 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 12. List of components …continued
See Figure 5 for schematics.
Component
Description
Value
Remarks
LTE-750
UMTS-2140
0
R4
resistor
0
L1
RF choke
68 nH
18 nH
L2
inductor
1.5 nH
-
X1, X2
SMA connector
-
-
[1]
length (L) is specified, width (W) = 1.14 mm and spacing (S) = 0.8 mm.
14.2 Characteristics LTE-750
*S
G%
DDD
DDD
,6/
G%
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGA7130
Product data sheet
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
Fig 10. Power gain as a function of frequency for
LTE-750 application; typical values
Fig 11. Isolation as a function of frequency for
LTE-750 application; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
13 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
_V_
G%
DDD
_V_
G%
DDD
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
,32
G%P
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
Fig 12. Input return loss as a function of frequency for
LTE-750 application; typical values
Fig 13. Output return loss as a function of frequency
for LTE-750 application; typical values
DDD
,32
G%P
I0+]
VSUP = 5 V; ICC(tot) = 450 mA; PL = 19 dBm per tone;
f = 748 MHz; f = 1 MHz; matched for LTE-750.
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
BGA7130
Product data sheet
I0+]
Tamb = 25 C; ICC(tot) = 450 mA; PL = 19 dBm per tone;
f = 748 MHz; f = 1 MHz; matched for LTE-750.
(1) Tamb = 40 C
Fig 14. Output third order intercept point as a function
of frequency for LTE-750 application; different
temperatures; typical values
Fig 15. Output third order intercept point as a function
of frequency for LTE-750 application; different
supply voltages; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
14 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
DDD
,32
G%P
DDD
,32
G%P
3/G%PSHUWRQH
VSUP = 5 V; ICC(tot) = 450 mA; f = 748 MHz; f = 1 MHz;
matched for LTE-750.
3/G%PSHUWRQH
Tamb = 25 C; ICC(tot) = 450 mA; f = 748 MHz; f = 1 MHz;
matched for LTE-750.
(1) Tamb = 40 C
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
Fig 16. Output third order intercept point as a function
of output power for LTE-750 application;
different temperatures; typical values
DDD
3/G%
G%
Fig 17. Output third order intercept point as a function
of output power for LTE-750 application;
different supply voltages; typical values
DDD
3/G%
G%
I0+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
BGA7130
Product data sheet
I0+]
Tamb = 25 C; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
Fig 18. Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different temperatures; typical values
Fig 19. Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different supply voltages; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
15 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
1)
G%
DDD
1)
G%
DDD
I*+]
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
9,GLJ
9
DDD
WȝV
Fig 22. Power-on delay time; typical values
Product data sheet
DDD
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
BGA7130
9,GLJ
9
9,5)287
P9
9,GLJ
Fig 21. Noise figure as a function of frequency for
LTE-750 application; different supply voltages;
typical values
9,5)287
9,GLJ
9,5)287
P9
I*+]
Tamb = 25 C; ICC(tot) = 450 mA; matched for LTE-750.
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
(1) Tamb = 40 C
Fig 20. Noise figure as a function of frequency for
LTE-750 application; different temperatures;
typical values
9,5)287
WȝV
VSUP = 5 V; ICC(tot) = 450 mA; matched for LTE-750.
Fig 23. Power-down delay time; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
16 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
DDD
*S,6/
G%
DDD
_V
_V__V_
G%
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW;
matched for LTE-750.
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW;
matched for LTE-750.
(1) Gp
(1) s112
(2) ISL
(2) s222
Fig 24. Isolation in power-down mode; typical values
Fig 25. Return loss in power-down mode; typical
values
14.3 Characteristics UMTS-2140
*S
G%
DDD
,6/
G%
DDD
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGA7130
Product data sheet
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
Fig 26. Power gain as a function of frequency for
UMTS-2140 application; typical values
Fig 27. Isolation as a function of frequency for
UMTS-2140 application; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
17 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
_V_
G%
DDD
_V_
G%
DDD
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
,32
G%P
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
Fig 28. Input return loss as a function of frequency for
UMTS-2140 application; typical values
Fig 29. Output return loss as a function of frequency
for UMTS-2140 application; typical values
DDD
,32
G%P
I0+]
VSUP = 5 V; ICC(tot) = 450 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for UMTS-2140.
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
BGA7130
Product data sheet
I0+]
Tamb = 25 C; ICC(tot) = 450 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for UMTS-2140.
(1) Tamb = 40 C
Fig 30. Third order intermodulation distortion as a
function of frequency for UMTS-2140
application; different temperatures; typical
values
Fig 31. Third order intermodulation distortion as a
function of frequency for UMTS-2140
application; different supply voltages; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
18 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
DDD
,32
G%P
DDD
,32
G%P
3/G%PSHUWRQH
VSUP = 5 V; ICC(tot) = 450 mA; f = 1 MHz; matched for
UMTS-2140.
(1) VSUP = 4.75 V
(2) Tamb = +25 C
(2) VSUP = 5 V
(3) Tamb = +85 C
(3) VSUP = 5.25 V
DDD
3/G%
G%
Tamb = 25 C; ICC(tot) = 450 mA; f = 1 MHz; matched for
UMTS-2140.
(1) Tamb = 40 C
Fig 32. Third order intermodulation distortion as a
function of output power for UMTS-2140
application; different temperatures;
typical values
3/G%PSHUWRQH
Fig 33. Third order intermodulation distortion as a
function of output power for UMTS-2140
application; different supply voltages;
typical values
DDD
3/G%
G%
I0+]
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
I0+]
Tamb = 25 C; ICC(tot) = 450 mA; matched for
UMTS-2140.
(2) Tamb = +25 C
(1) VSUP = 4.75 V
(3) Tamb = +85 C
(2) VSUP = 5 V
(3) VSUP = 5.25 V
Fig 34. Output power at 1 dB gain compression as a
function of frequency for UMTS-2140
application; different temperatures; typical
values
BGA7130
Product data sheet
Fig 35. Output power at 1 dB gain compression as a
function of frequency for UMTS-2140
application; different supply voltages; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
19 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
1)
G%
DDD
1)
G%
DDD
I*+]
I*+]
Tamb = 25 C; ICC(tot) = 450 mA; matched for
UMTS-2140.
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
(1) Tamb = 40 C
(2) Tamb = +25 C
(1) VSUP = 4.75 V
(3) Tamb = +85 C
(2) VSUP = 5 V
(3) VSUP = 5.25 V
Fig 36. Noise figure as a function of frequency for
UMTS-2140 application; different
temperatures; typical values
9,GLJ
9
DDD
9,GLJ
WȝV
9,5)287
P9
9,GLJ
Fig 38. Power-on delay time; typical values
Product data sheet
DDD
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
BGA7130
9,GLJ
9
9,5)287
9,5)287
P9
Fig 37. Noise figure as a function of frequency for
UMTS-2140 application; different supply
voltages; typical values
9,5)287
WȝV
VSUP = 5 V; ICC(tot) = 450 mA; matched for UMTS-2140.
Fig 39. Power-down delay time; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
20 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
DDD
*S,6/
G%
DDD
_V
_V__V_
G%
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW;
matched for UMTS-2140.
(1) s112
(2) ISL
(2) s222
BGA7130
Product data sheet
I*+]
VSUP = 5 V; ICC(tot) = 450 mA; pin ENABLE = LOW;
matched for UMTS-2140.
(1) Gp
Fig 40. Isolation in power-down mode; typical values
Fig 41. Return loss in power-down mode; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
21 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
15. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3 x 3 x 0.85 mm
SOT908-3
X
A
B
D
A
E
A1
c
detail X
terminal 1
index area
e1
terminal 1
index area
e
C
1
C A B
v
w
b
4
y1 C
y
L
k
Eh
8
5
Dh
0
1
Dimensions (mm are the original dimensions)
Unit
mm
A(1)
A1
b
max 1.00 0.05 0.30
nom 0.85 0.03 0.25
min 0.80 0.00 0.20
2 mm
scale
c
D(1)
Dh
E(1)
Eh
e
e1
0.2
3.1
3.0
2.9
2.45
2.40
2.35
3.1
3.0
2.9
1.75
1.70
1.65
0.5
1.5
k
L
0.30 0.45
0.25 0.40
0.20 0.35
v
0.1
w
y
0.05 0.05
y1
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
References
Outline
version
IEC
JEDEC
JEITA
SOT908-3
---
MO-229
---
sot908-3_po
European
projection
Issue date
11-12-18
12-06-18
Fig 42. Package outline SOT908-3 (HVSON8)
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
22 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
16. Soldering
)RRWSULQWLQIRUPDWLRQIRUUHIORZVROGHULQJRI+9621SDFNDJH
627
*[
3
'
&
Q63[
+\
63\
*\
6/\
%\
$\
Q63\
63[
6/[
VROGHUODQG
VROGHUSDVWHGHSRVLW
VROGHUODQGSOXVVROGHUSDVWH
RFFXSLHGDUHD
',0(16,216LQPP
3
$\
%\
&
'
6/[
6/\
63[
63\
*[
*\
+\
Q63[
Q63\
,VVXHGDWH
VRWBIU
Fig 43. Reflow soldering footprint
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
23 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
17. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CPE
Customer-Premises Equipment
ESD
ElectroStatic Discharge
E-UTRA
Evolved Universal Terrestrial Radio Access
eUTRAN
evolved UMTS Terrestrial Radio Access Network
HBM
Human Body Model
ISM
Industrial, Scientific and Medical
LTE
Long Term Evolution
MMIC
Monolithic Microwave Integrated Circuit
MoCA
Multimedia over Coax Alliance
PAR
Peak-to-Average power Ratio
RFID
Radio Frequency IDentification
SMA
Sub-Miniature version A
UMTS
Universal Mobile Telecommunications System
VSWR
Voltage Standing-Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
WLAN
Wireless Local Area Network
18. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA7130 v.1
20121009
Product data sheet
-
-
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
24 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGA7130
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
25 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA7130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
26 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
21. Contents
1
2
3
4
5
6
7
8
8.1
8.2
9
9.1
9.2
10
11
12
13
14
14.1
14.2
14.3
15
16
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Supply current adjustment . . . . . . . . . . . . . . . . 5
Enable control. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 8
Application board . . . . . . . . . . . . . . . . . . . . . . . 9
Characteristics LTE-750 . . . . . . . . . . . . . . . . . 13
Characteristics UMTS-2140 . . . . . . . . . . . . . . 17
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Contact information. . . . . . . . . . . . . . . . . . . . . 26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 October 2012
Document identifier: BGA7130
Similar pages