Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S7120N
Rev. 0, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S7120NR3
Designed for CDMA base station applications with frequencies from 728 to
768 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz
19.2
36.6
6.3
--38.3
748 MHz
19.2
37.1
6.4
--38.2
768 MHz
19.2
38.1
6.3
--37.6
728--768 MHz, 32 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 125 Watts CW
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 31.5 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz
Case Temperature 80°C, 120 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz
RθJC
0.65
0.55
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S7120NR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 460 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.0
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., f = 768 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.2
21.0
dB
Drain Efficiency
ηD
35.0
38.1
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.7
6.3
—
dB
ACPR
—
--37.6
--36.0
dBc
IRL
—
--18
--9
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.2
36.6
6.3
--38.3
--13
748 MHz
19.2
37.1
6.4
--38.2
--15
768 MHz
19.2
38.1
6.3
--37.6
--18
1. Part internally matched both on input and output.
(continued)
MRF8S7120NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 728--768 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
125
—
—
12
—
W
IMD Symmetry @ 111 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
45
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.016
—
dB/°C
∆P1dB
—
0.0047
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MRF8S7120NR3
RF Device Data
Freescale Semiconductor
3
B1
C25
C27
C22 C23
C20 C21
C7
C8
R1
C4 C5
R2
C10
CUT OUT AREA
C2
C1
C26
C12
C15
C11
C13
C14
C9
C3 C6
C16 C17
C18 C19
MRF8S7120N
Rev. 0
C24
Figure 1. MRF8S7120NR3 Test Circuit Component Layout
Table 6. MRF8S7120NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Ferrite Bead
MPZ2012S300AT000
TDK
C1, C3, C4
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C2, C7
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C5, C6, C11, C12
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C8
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
C9, C10
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C13
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C14
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C15, C16, C17, C20, C21
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C18, C19, C22, C23
10 μF, 50 V Chip Capacitors
C5750X7R1H106KT
TDK
C24, C25
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C26
1 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C27
4.7 μF, 50 V Chip Capacitor
C4532X7R1H475MT
TDK
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061K00FKEA
Vishay
R2
6.2 Ω, 1/4 W Chip Resistor
CRCW12066R20JNEA
Vishay
PCB
0.030″, εr = 3.5
TC350
Arlon
MRF8S7120NR3
4
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
20.2
36
19.8
34
Gps
19.4
32
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
19
18.6
18.2
17
710
--10
--38.5
IRL
720
--37
--38
ACPR
17.4
--7
--37.5
PARC
17.8
--36.5
730
740
--39
750
760
770
780
--13
--16
--19
--22
790
0
--0.5
--1
--1.5
PARC (dB)
38
IRL, INPUT RETURN LOSS (dB)
40
ηD
20.6
ACPR (dBc)
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 32 Watts Avg.
--10
VDD = 28 Vdc, Pout = 111 W (PEP), IDQ = 600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
IM7--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
18
17
16
15
--1 dB = 28 W
--1
--2 dB = 40 W
--2
ηD
--20
60
--25
50
--3 dB = 55 W
40
--3
--4
Gps
VDD = 28 Vdc, IDQ = 600 mA, f = 748 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
--5
--6
70
ACPR
20
40
60
80
PARC
100
30
--30
--35
ACPR (dBc)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
20
0
ηD, DRAIN EFFICIENCY (%)
21
--40
20
--45
10
--50
120
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S7120NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
19
728 MHz
--20
59
--27
48
768 MHz
18
70
748 MHz
37
17
Gps
768 MHz
748 MHz
16
15
728 MHz
4
300
15
1
26
100
10
--34
--41
--48
ACPR (dBc)
VDD = 28 Vdc, IDQ = 600 mA, Single--Carrier W--CDMA
ACPR
3.84 MHz Channel Bandwidth, Input Signal PAR =
20 7.5 dB @ 0.01% Probability
ηD
on CCDF
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
21
--55
--62
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
22
Gain
--5
18
--10
16
--15
14
IRL (dB)
GAIN (dB)
20
--20
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 600 mA
12
10
600
650
700
IRL
750
800
--25
850
900
950
--30
1000
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S7120NR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
710
0.83 -- j1.35
2.23 -- j1.62
720
0.93 -- j1.28
2.18 -- j1.47
730
1.01 -- j1.25
2.16 -- j1.37
740
1.08 -- j1.25
2.15 -- j1.29
750
1.11 -- j1.28
2.12 -- j1.24
760
1.10 -- j1.29
2.06 -- j1.18
770
1.06 -- j1.28
2.00 -- j1.09
780
1.02 -- j1.24
1.95 -- j0.97
790
0.99 -- j1.18
1.94 -- j0.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S7120NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
64
62
Pout, OUTPUT POWER (dBm)
60
Ideal
58
56
728 MHz
54
Actual
748 MHz
768 MHz
52
50
768 MHz
48
748 MHz
46
44
42
25
27
29
31
33
37
35
39
41
43
45
47
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
728
185
52.7
200
53.0
748
189
52.8
232
53.7
768
165
52.2
215
53.3
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
728
P1dB
0.87 -- j2.04
1.25 -- j1.39
748
P1dB
1.05 -- j2.23
1.16 -- j1.88
768
P1dB
1.07 -- j2.05
1.15 -- j2.58
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S7120NR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S7120NR3
RF Device Data
Freescale Semiconductor
9
MRF8S7120NR3
10
RF Device Data
Freescale Semiconductor
MRF8S7120NR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2010
Description
• Initial Release of Data Sheet
MRF8S7120NR3
12
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFr[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2010. All rights reserved.
MRF8S7120NR3
Document
Number:
RF
Device
Data MRF8S7120N
Rev. 0, 5/2010
Freescale
Semiconductor
13