Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和发射极控制二极管
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlleddiode
初步数据/PreliminaryData
VCES = 1700V
IC nom = 650A / ICRM = 1300A
典型应用
• 大功率变流器
• 电机传动
• 风力发电机
TypicalApplications
• Highpowerconverters
• Motordrives
• Windturbines
电气特性
• 高短路能力
• 高冲击电流能力
• 高电流密度
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• Highshort-circuitcapability
• Highsurgecurrentcapability
• Highcurrentdensity
• Tvjop=150°C
• VCEsatwithpositivetemperaturecoefficient
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高爬电距离和电气间隙
• 集成NTC温度传感器
• 符合RoHS
• 预涂导热介质
MechanicalFeatures
• 4kVAC1mininsulation
• PackagewithCTI>400
• Highcreepageandclearancedistances
• IntegratedNTCtemperaturesensor
• RoHScompliant
• Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TH = 65°C, Tvj max = 175°C
IC nom 650
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1300
A
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
2,00
2,35
2,45
2,45
2,90
3,00
V
V
V
5,80
6,40
V
栅极阈值电压
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
7,00
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,3
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
54,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,70
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,20
0,55
0,60
0,60
µs
µs
µs
0,09
0,11
0,12
µs
µs
µs
1,00
1,25
1,30
µs
µs
µs
0,29
0,49
0,57
µs
µs
µs
Eon
205
300
320
mJ
mJ
mJ
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,7 Ω
Tvj = 150°C
Eoff
140
205
230
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
2700
A
???
Thermalresistance,junctiontoheatsink
每个IGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
RthJH
Tvj op
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
2
54,3 K/kW
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
VRRM 1700
V
IF
650
A
IFRM
1300
A
I²t
70,5
kA²s
PRQM 650
kW
特征值/CharacteristicValues
min.
typ.
max.
VF
1,85
1,95
1,95
2,25
2,35
2,35
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
695
760
805
A
A
A
恢复电荷
Recoveredcharge
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
160
265
310
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
76,0
135
160
mJ
mJ
mJ
???
Thermalresistance,junctiontoheatsink
每个二极管/perdiode
validwithIFXpre-appliedthermalinterfacematerial
RthJH
正向电压
Forwardvoltage
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
V
V
V
105 K/kW
-40
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TNTC = 25°C
R100偏差
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TNTC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
3
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 4,0
kV
Cu
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
19,0
19,0
mm
> 400
相对电痕指数
Comperativetrackingindex
CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TH=25°C,每个开关/perswitch
储存温度
Storagetemperature
18
nH
RCC'+EE'
0,30
mΩ
-40
TBPmax
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
端子联接扭距
Terminalconnectiontorque
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
重量
Weight
G
Lagerung und Transport von Modulen mit TIM: siehe AN2012-07
Storage and shipment of modules with TIM: see AN2012-07
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
4
max.
LsCE
Tstg
最高基板工作温度
Maximumbaseplateoperationtemperature
typ.
3,00
125
°C
125
°C
6,00
Nm
1,8
-
2,1
Nm
8,0
-
10
Nm
825
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1300
1300
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1000
1000
900
900
800
800
700
700
IC [A]
1100
IC [A]
1100
600
600
500
500
400
400
300
300
200
200
100
100
0
0,0
0,5
1,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
1200
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.8Ω,RGoff=2.7Ω,VCE=900V
1300
550
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
Eon, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
500
1100
450
1000
400
900
350
700
E [mJ]
IC [A]
800
600
500
300
250
200
400
150
300
100
200
50
100
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
5
0
200
400
600
800
IC [A]
1000
1200
5,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=650A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
1000
100
Eon, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
900
ZthJH : IGBT
800
700
10
ZthJH [K/kW]
E [mJ]
600
500
400
1
300
200
i:
1
2
3
4
ri[K/kW]: 4,95
13,5
24,1 11,7
τi[s]:
0,000949 0,0278 0,105 0,664
100
0
0
2
4
6
8
10
12
0,1
0,001
14
0,01
0,1
t [s]
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.7Ω,Tvj=150°C
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1400
1300
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1200
1100
1000
1000
900
800
IF [A]
IC [A]
800
600
700
600
500
400
400
300
200
200
100
0
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.8Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=650A,VCE=900V
220
220
Erec, Tvj = 150°C
Erec, Tvj = 125°C
180
180
160
160
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
200
400
Erec, Tvj = 150°C
Erec, Tvj = 125°C
200
E [mJ]
E [mJ]
200
600
IF [A]
800
1000
0
1200
0
2
4
6
8
10
12
14
RG [Ω]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150°C
1000
ZthJH : Diode
1400
IR, Modul
1200
1000
IR [A]
ZthJH [K/kW]
100
800
600
10
400
i:
1
2
3
4
ri[K/kW]: 12,1
34
43,9 15,1
τi[s]:
0,000926 0,0278 0,111 0,766
1
0,001
0,01
0,1
t [s]
1
200
0
10
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
7
0
200
400
600
800 1000 1200 1400 1600 1800
VR [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TNTC [°C]
120
140
160
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
接线图/Circuitdiagram
封装尺寸/Packageoutlines
154
restricted area for Thermal Interface Material
60
6,5
1
36 0,2
screwing depth
max. 16 (4x)
18 0,2 (2x)
22 +- 0,6
0
3 0,1
36,5 0,3
screwing depth
max. 8 (7x)
A
172 0,5
150
113
103
recommeded design height
lower side PCB to baseplate
92
76
58
8 0,1 (7x)
25,9 0,25
+
5,5 - 00,1
0,25 A B C
(10x)
10
20 0,1
37,7 0,25
B
recommeded design height
lower side bus bar to baseplate
28 0,1
5,5
17 0,1
0,6 A B C
(4x)
C
39
64
78
117
156
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
9
M8
5,5
4,3
24,5 0,5
14
39
25
21,5 0,3
10
45,5 0,5
21 0,3
M4
0,6 A B C
(7X)
12,3 0,3
89 0,5
73
0,4 A
(7x)
1 MAX
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF650R17IE4P
初步数据
PreliminaryData
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
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applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany
applicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologies
incustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.
preparedby:SM
dateofpublication:2016-03-17
approvedby:RN
revision:V2.0
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