技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P PrimePACK™3模块采用第四代沟槽栅/场终止IGBT4和发射极控制二极管 PrimePACK™3modulewithTrench/FieldstopIGBT4andEmitterControlleddiode VCES = 1700V IC nom = 1000A / ICRM = 2000A 典型应用 • 大功率变流器 • 电机传动 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • Windturbines 电气特性 • 高短路能力 • 高冲击电流能力 • 高电流密度 • 低开关损耗 • Tvjop=150°C • VCEsat带正温度系数 ElectricalFeatures • Highshort-circuitcapability • Highsurgecurrentcapability • Highcurrentdensity • Lowswitchinglosses • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient 机械特性 • 4kV交流1分钟绝缘 • 封装的CTI>400 • 高爬电距离和电气间隙 • 集成NTC温度传感器 • 符合RoHS • 预涂导热介质 MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearancedistances • IntegratedNTCtemperaturesensor • RoHScompliant • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 60°C, Tvj max = 175°C IC nom 1000 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 2000 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 1000 A, VGE = 15 V IC = 1000 A, VGE = 15 V IC = 1000 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 2,00 2,35 2,45 2,45 2,80 3,00 V V V 5,80 6,40 V 栅极阈值电压 Gatethresholdvoltage IC = 36,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 10,0 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,5 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 81,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 2,60 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 1000 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 1000 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 1000 A, VCE = 900 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 1000 A, VCE = 900 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 8000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,2 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,20 0,55 0,60 0,60 µs µs µs 0,10 0,12 0,12 µs µs µs 1,00 1,25 1,30 µs µs µs 0,29 0,50 0,59 µs µs µs Eon 265 390 415 mJ mJ mJ IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,8 Ω Tvj = 150°C Eoff 200 295 330 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 4000 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJH Tvj op preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 2 37,1 K/kW -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C 最大损耗功率 Maximumpowerdissipation Tvj = 125°C VRRM 1700 V IF 1000 A IFRM 2000 A I²t 140 kA²s PRQM 1000 kW 特征值/CharacteristicValues min. typ. max. VF 1,85 1,95 1,95 2,25 2,40 2,40 IF = 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 1050 1200 1250 A A A 恢复电荷 Recoveredcharge IF = 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 245 410 480 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 115 205 245 mJ mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 正向电压 Forwardvoltage IF = 1000 A, VGE = 0 V IF = 1000 A, VGE = 0 V IF = 1000 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op V V V 68,5 K/kW -40 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 3 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 33,0 33,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 19,0 19,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 10 nH RCC'+EE' 0,20 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 端子联接扭距 Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M 重量 Weight G Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 4 max. LsCE Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 3,00 125 °C 125 °C 6,00 Nm 1,8 - 2,1 Nm 8,0 - 10 Nm 1200 g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 2000 2000 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1800 1400 1400 1200 1200 IC [A] 1600 IC [A] 1600 1000 1000 800 800 600 600 400 400 200 200 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.2Ω,RGoff=1.8Ω,VCE=900V 2000 1100 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1800 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 1000 900 1600 800 1400 700 IC [A] E [mJ] 1200 1000 800 600 500 400 600 300 400 200 200 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 1800 100 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 5 0 200 400 600 800 1000 1200 1400 1600 1800 2000 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=1000A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 1200 100 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 1100 1000 ZthJH: IGBT 900 800 10 ZthJH [K/kW] E [mJ] 700 600 500 400 1 300 200 i: 1 2 3 4 ri[K/kW]: 2,98 10,4 15,9 7,77 τi[s]: 0,000794 0,0294 0,117 0,795 100 0 0 1 2 3 4 5 RG [Ω] 6 7 8 0,1 0,001 9 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.8Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 2200 2000 IC, Modul IC, Chip 2000 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1800 1800 1600 1600 1400 1400 1200 IF [A] IC [A] 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.2Ω,VCE=900V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1000A,VCE=900V 350 350 Erec, Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C Erec, Tvj = 125°C 250 250 200 200 E [mJ] 300 E [mJ] 300 150 150 100 100 50 50 0 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 IF [A] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 1 2 3 4 5 RG [Ω] 6 7 8 9 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 100 2400 ZthJH: Diode IR, Modul 2000 IR [A] ZthJH [K/kW] 1600 10 1200 800 400 i: 1 2 3 4 ri[K/kW]: 4,99 21,9 30,8 10,8 τi[s]: 0,00115 0,0259 0,105 0,778 1 0,001 0,01 0,1 t [s] 1 0 10 preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 7 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TNTC [°C] 120 140 160 preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P 接线图/Circuitdiagram 封装尺寸/Packageoutlines 1 232 60 6,5 restricted area for Thermal Interface Material 36 0,2 screwing depth max. 16 (6x) 18 0,2 (4x) 22 +- 0,6 0 3 0,1 36,5 0,3 screwing depth max. 8 (7x) A 250 0,5 224 187 150 113 103 92 recommeded design height lower side PCB to baseplate 76 58 8 0,1 (7x) 25,9 0,25 + 5,5 - 00,1 0,25 A B C (10x) 0,4 A (7x) 37,7 0,25 recommeded design height B lower side bus bar to baseplate 10 25 28 0,1 5,5 39 M8 0,6 A B C (6x) 17 0,1 5,5 24,5 0,5 39 14 20 0,1 12,3 0,3 4,3 89 0,5 73 21 0,3 M4 0,6 A B C (7x) 10 21,5 0,3 1 MAX C 64 78 117 156 195 234 preparedby:SM dateofpublication:2016-03-08 approvedby:RN revision:V3.1 9 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1000R17IE4P Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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