ECH8693R D

Ordering number : ENA2208A
ECH8693R
N-Channel Power MOSFET
http://onsemi.com
24V, 14A, 7mΩ, Dual ECH8 Common Drain
Features
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Unit
24
V
±12.5
V
14
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.4
W
Total Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Symbol
Conditions
Ratings
min
typ
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
24
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=5A
0.5
RDS(on)1
RDS(on)2
ID=5A, VGS=4.5V
ID=5A, VGS=4.0V
ID=5A, VGS=3.1V
RDS(on)3
RDS(on)4
Unit
max
V
1
μA
±1
μA
1.3
8
ID=2.5A, VGS=2.5V
V
S
4.4
5.6
7
mΩ
4.6
5.8
7.5
mΩ
5.2
6.5
9.1
mΩ
6
7.5
10.5
mΩ
Turn-ON Delay Time
td(on)
545
ns
Rise Time
525
ns
Turn-OFF Delay Time
tr
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=14A
18650
ns
22200
ns
13
nC
3
nC
2.4
IS=14A, VGS=0V
0.78
nC
1.2
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
October, 2013
O1613 TKIM TC-00003055/90413 TKIM TC-00003016 No. A2208-1/5
ECH8693R
.5V
9.0
6.0
4.0
7.0
6.0
5.0
4.0
--25°C
8.0
8.0
3.0
2.0
25°C
Drain Current, ID -- A
4.0V 3
.1V
Drain Current, ID -- A
10.0
VDS=10V
10.0
=1
V GS
12.0
ID -- VGS
11.0
Ta=75
°C
1.8V
4.5V
2.5V
ID -- VDS
14.0
2.0
1.0
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
0
14
12
5A
ID=2.5A
8
6
4
2
0
2
0
4
6
8
3
2
6
A
I =5
4.5V, D
V GS=
4
2
--40
--20
0
20
40
60
80
100
120
140
160
IT17196
S/W Time -- ID
VDD=10V
VGS=4.5V
td (off)
3
2
tf
10K
7
5
3
2
1K
7
5
td(on)
tr
3
2
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Forward Source to Drain Voltage, VSD -- V
100
0.1
0.9
100
7
5
3
2
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
0.5
0
2
4
6
8
5
10
Total Gate Charge, Qg -- nC
12
14
IT17202
7
2
1.0
3
5
10
7
5
3
2
1.0
7
5
3
2
7
10
IT17166
SOA
2
3.5
0
3
Source Current, IS -- A
VDS=10V
ID=14A
4.0
2
IT17165
Qg -- VGS
4.5
Gate to Source Voltage, VGS -- V
=5A
V, I D
0
.
4
=
VGS
=2.5
VGS
100K
7
5
Switching Time, S/W Time -- ns
C
0.1
7
5
--25
°C
3
2
25°
Ta=
75°
C
Forward Source Current, IS -- A
3
2
1.0
7
5
A
=2.5
V, I D
8
Ambient Temperature, Ta -- °C
VGS=0V
10
7
5
2.5
IT17162
=5A
V, I D
1
.
=3
V GS
10
IT17195
IS -- VSD
3
2
2.0
12
0
--60
10
Gate to Source Voltage, VGS -- V
1.5
RDS(on) -- Ta
14
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
16
1.0
Gate to Source Voltage, VGS -- V
Ta=25°C
18
10
0.5
IT17194
RDS(on) -- VGS
20
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
1.0
IDP=60A(PW≤10μs)
100
μs
1m
s
ID=14A
DC
Operation in this
area is limited by RDS(on).
0.1
7 Ta=25°C
5
Single pulse
3
2 When mounted on ceramic substrate
2
0.01 (900mm ×0.8mm) 1unit
2
3
5 7 0.1 2 3 5 7 1.0
0.01
op
10
ms
10
0m
s
era
tio
n
2 3
5 7 10
2 3
Drain to Source Voltage, VDS -- V
5 7100
IT17197
No. A2208-2/5
ECH8693R
PD -- Ta
Allowable Power Dissipation, PD -- W
1.6
When mounted on ceramic substrate
(900mm2×0.8mm)
1.5
1.4
1.2
To
tal
Di
ss
ip
ati
1u
on
ni
t
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140 150
IT17169
No. A2208-3/5
ECH8693R
Package Dimensions
ECH8693R-TL-W
SOT-28FL/ECH8
CASE 318BF
ISSUE O
Unit : mm
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain
6: Drain
7: Drain
8: Drain
Land Pattern Example
2.8
0.6
0.4
0.65
PackingType: TL
Ordering & Package Information
Device
Package
ECH8693R-TL-W
ECH8
Electrical Connection
8
7
6
Shipping
memo
3,000
pcs./reel
Pb-Free
and
Halogen Free
Marking
UQ
TL
LOT No.
Switching Time Test Circuit
5
VDD=10V
VIN
4.5V
0V
ID=7A
RL=1.4Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
Rg
G
1
2
3
4
P.G
ECH8693R
50Ω
S
Rg=1kΩ
No. A2208-4/5
ECH8693R
Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A2208-5/5
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