Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFIC901N
Rev. 0, 1/2016
RF LDMOS Wideband Integrated
Power Amplifier
The AFIC901N is a 2--stage, high gain amplifier designed to provide a high
level of flexibility to the amplifier designer. The device is unmatched even at the
interstage, allowing performance to be optimized for any frequency in the 1.8 to
1000 MHz range. The high gain, ruggedness and wideband performance of this
device make it ideal for use as a pre-- driver and driver in a wide range of
industrial, medical and communications applications.
AFIC901N
1.8–1000 MHz, 30 dBm, 7.5 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Typical Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(dBm)
520 (1)
32.2
73.0
31.2
Typical Wideband Performance (7.5 Vdc, TA = 25C, CW)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(dBm)
136–174 (2,5)
0
30.6
62.1
30.6
(3,5)
3
27.4
61.5
30.4
760–870 (4,5)
3
27.6
57.0
30.6
350–520
QFN 4  4
Gate A
Gate A
N.C.
N.C.
Drain A
Drain A
Frequency
(MHz)
Load Mismatch/Ruggedness
Signal Type
VSWR
175 (2)
CW
> 25:1 at all
Phase Angles
520 (3)
1.
2.
3.
4.
5.
Pin
(W)
Test
Voltage
3 dB
Overdrive
from rated
power
9
24 23 22 21 20 19
Result
No Device
Degradation
Measured in 520 MHz narrowband test circuit.
Measured in 136–174 MHz VHF broadband reference circuit.
Measured in 350–520 MHz UHF broadband reference circuit.
Measured in 760–870 MHz broadband reference circuit.
The values shown are the center band performance numbers across the indicated
frequency range.
Features
 Characterized for Operation from 1.8 to 1000 MHz
 Unmatched Input, Interstage and Output Allowing Wide Frequency Range
Utilization
 Integrated ESD Protection
 Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and
760–870 MHz Designs.
 24--pin, 4 mm QFN Plastic Package
Typical Applications
 Driver for Mobile Radio Power Amplifiers
 Output Stage for Low Power Handheld Radios
 Driver for Communications and Industrial Systems
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
18 GND
GND 1
Stage 1
GND
N.C.
Drain B
Drain B
2
3
4
5
Drain B 6
17
16
15
14
13
Stage 2
GND
N.C.
Gate B
Gate B
Gate B
7 8 9 10 11 12
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
Frequency
(MHz)
Note: Exposed backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
Stage 1
Stage 2
RFin
RFout
External
Interstage Match
Figure 2. Typical Application
AFIC901N
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +30
Vdc
Gate--Source Voltage
VGS
–6.0, +12
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +150
C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 30 dBm CW, 520 MHz
Stage 1, 7.5 Vdc, IDQ1 = 8 mA
Stage 2, 7.5 Vdc, IDQ2 = 24 mA
RJC
C/W
32
9.4
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A, passes 250 V
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
II, passes 200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
AFIC901N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IDSS
—
—
1
Adc
V(BR)DSS
30
37
—
Vdc
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 6 Adc)
VGS(th)
1.8
2.2
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 46 mAdc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 7.5 Vdc, ID = 0.1 Adc)
gfs
—
0.096
—
S
IDSS
—
—
1
Adc
V(BR)DSS
30
37
—
Vdc
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 Adc)
VGS(th)
1.7
2.1
2.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 380 mAdc)
VDS(on)
—
0.23
—
Vdc
gfs
—
1.1
—
S
Characteristic
Stage 1 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 Adc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Stage 1 -- On Characteristics (1)
Stage 2 -- Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 Adc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Stage 2 -- On Characteristics (1)
Forward Transconductance
(VDS = 7.5 Vdc, ID = 1.1 Adc)
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA,
Pin = –1 dBm, f = 520 MHz
Output Power
Pout
—
31.2
—
dBm
Power Gain
Gps
—
32.2
—
dB
Drain Efficiency
D
—
73.0
—
%
Table 6. Ordering Information
Device
AFIC901NT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
QFN 4  4
1. Each side of device measured separately.
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
3
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
Table 7. 136–174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(dBm)
135
–0.8
30.8
65.9
30.0
155
–1.3
31.3
59.6
30.0
175
–1.1
31.1
61.4
30.0
Table 8. Load Mismatch/Ruggedness (In Freescale 136–174 MHz Reference Circuit, 50 ohm system) IDQ1 = 10 mA, IDQ2 = 30 mA
Frequency
(MHz)
Signal Type
VSWR
Pin
(W)
175
CW
> 25:1 at all
Phase Angles
3 dB Overdrive
from rated power
Test Voltage, VDD
Result
9
No Device
Degradation
AFIC901N
4
RF Device Data
Freescale Semiconductor, Inc.
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.11 cm  4.72 cm)
J1
R1
C1
C3 C4
C9
R9
R8
C11 C12
C15
C10
R4
L2
P2
R6
L4
R2
L1
C17
L3
P1
C5 C6
C2
R7
VG2
C13 C14
C8
R3
C7
R5
D75372
VG1
B1
Q1
L5
R10
L6
C16
Rev. 0
Figure 3. AFIC901N VHF Broadband Reference Circuit Component Layout — 136–174 MHz
Table 9. AFIC901N VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz
Part
Description
Part Number
Manufacturer
B1
RF Bead
2508051107Y0
Fair-Rite
C1, C5, C9, C12, C14,
C17
1000 pF Chip Capacitors
C2012X7R2E102M085AA
TDK
C2, C16
15 pF Chip Capacitors
GQM2195C2E150FB12D
Murata
C3
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C4, C6, C7, C8, C11,
C13
100 pF Chip Capacitors
GQM2195C2E101GB12D
Murata
C10
6.2 pF Chip Capacitor
GQM2195C2E6R2BB12D
Murata
C15
10 F Chip Capacitor
GRM31CR61H106KA12L
Murata
J1
Right-Angle Breakaway Headers (3 Pins)
22-28-8360
Molex
L1, L4
56 nH Inductors
LL1608-FSL56NJ
TOKO
L2
180 nH Inductor
LL1608-FSLR18J
TOKO
L3
120 nH Inductor
LL1608-FSLR12J
TOKO
L5
180 nH Inductor
1008CS-181XJLB
Coilcraft
L6
15.7 nH Inductor
0806SQ15N
Coilcraft
P1, P2
5.0 k Multi-turn Cermet Trimmer Potentiometer
3224W-1-502E
Bourns
Q1
RF Power LDMOS Amplifier
AFIC901NT1
Freescale
R1, R7
15 k, 1/10 W Chip Resistors
RR1220P-153-B-T5
Susumu
R2, R8
10 k, 1/8 W Chip Resistors
CRCW080510K0FKEA
Vishay
R3
200 , 1/8 W Chip Resistor
CRCW0805200RJNEA
Vishay
R4, R6
1.2 k, 1/8 W Chip Resistors
CRCW08051K20FKEA
Vishay
R5
510 , 1/10 W Chip Resistor
RR1220P-511-B-T5
Susumu
R9, R10
0 , 2.5 A Chip Resistors
CWCR08050000Z0EA
Vishay
PCB
FR4 (S--1000), 0.020, r = 4.8
D75372
MTL
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
35
34
33
60
50
32
31
Gps
40
30
32
29
31
Pout
30
28
27
26
29
VDD = 7.5 V, Pin = 0 dBm, IDQ1 = 10 mA, IDQ2 = 30 mA
135
140
145
150
155
160
165
170
Pout, OUTPUT
POWER (dBm)
Gps, POWER GAIN (dB)
70
D
D, DRAIN
EFFICIENCY (%)
80
28
175
FREQUENCY (MHz)
Figure 4. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power
2.5
0.5
2
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
VDD = 7.5 V, IDQ1 = 10 mA, f = 155 MHz
1.5
1
Pin = 0 dBm
Pin = –3 dBm
0.5
0.25
Detail A
0
1.5
2.0
2.5
3.0
VDD = 7.5 V, IDQ1 = 10 mA, f = 155 MHz
Pin = 0 dBm
Pin = –3 dBm
0
1.5
3.5
4.0
2.0
2.5
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
Detail A
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
80
70
60
50
40
30
20
32
30
28
26
24
22
20
D, DRAIN
EFFICIENCY (%)
36
D
35
135 MHz
34
175 MHz
33
155 MHz 175 MHz
32
31
Gps
155 MHz
30
135 MHz
29
175 MHz
28
Pout
27 135 MHz
26
25
155 MHz
VDD = 7.5 Vdc, lDQ1 = 10 mA, lDQ2 = 30 mA
24
23
–8
–6
–4
–2
0
2
Pout, OUTPUT
POWER (dBm)
Gps, POWER GAIN (dB)
Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage
4
Pin, INPUT POWER (dBm)
Figure 6. Power Gain, Drain Efficiency and Output Power
versus Input Power and Frequency
AFIC901N
6
RF Device Data
Freescale Semiconductor, Inc.
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
Zo = 75 
f = 135 MHz
Zinterstage_out
f = 175 MHz
Zsource
f = 135 MHz
f = 175 MHz
f = 135 MHz
f = 175 MHz
Zinterstage_in
f = 135 MHz
Zload
f = 175 MHz
f
MHz
Zsource1

Zload1

Zsource2

Zload2

135
129.8 + j62.2
93.0 + j49.5
27.8 + j35.9
34.3 + j2.85
140
123.1 + j54.4
92.5 + j42.5
29.4 + j35.1
33.4 + j1.92
145
117.3 + j49.7
91.6 + j37.2
30.7 + j34.1
32.5 + j1.00
150
112.5 + j47.8
91.0 + j33.3
31.8 + j33.1
31.7 + j0.08
155
109.1 + j47.7
90.9 + j30.7
32.7 + j32.2
30.9 – j0.83
160
107.1 + j49.6
91.9 + j29.2
33.2 + j31.4
30.0 – j1.66
165
106.3 + j53.5
93.9 + j28.6
33.6 + j31.0
29.1 – j2.41
170
106.8 + j59.2
97.4 + j28.7
33.9 + j30.9
28.2 – j3.03
175
108.3 + j67.5
102.6 + j29.4
34.1 + j31.1
27.4 – j3.49
Zsource = Test circuit impedance as measured from gate to gate.
Zload
= Test circuit impedance as measured from drain to drain.
50 
Input
Matching
Network
Interstage
Matching
Network
Stage 1
Zsource1
Zload1
Output
Matching
Network
Stage 2
Zsource2
50 
Zload2
Figure 7. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
7
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 10. 350–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(dBm)
350
2.3
27.7
52.8
30.0
435
2.1
27.9
59.6
30.0
520
2.4
27.6
66.3
30.0
Table 11. Load Mismatch/Ruggedness (In Freescale 350–520 MHz Reference Circuit, 50 ohm system) IDQ1 = 100 mA, IDQ2 = 30 mA
Frequency
(MHz)
Signal Type
VSWR
Pin
(W)
520
CW
> 25:1 at all
Phase Angles
3 dB Overdrive
from rated power
Test Voltage, VDD
Result
9
No Device
Degradation
AFIC901N
8
RF Device Data
Freescale Semiconductor, Inc.
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.11 cm  4.72 cm)
J1
R2
L1
C1
C4 C5
C18
L4
P1
R3
C2
C16
C7 C11
R4
R5
L2
R10
C14 C15
C9
R6
L3
R9
C12 C13
C6
R1
P2
R7
C10
L5
C3
R8
VG2
D75372
VG1
B1
Q1
L6
C8
R11
L7
C17
Rev. 0
Figure 8. AFIC901N UHF Broadband Reference Circuit Component Layout — 350–520 MHz
Table 12. AFIC901N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz
Part
Description
Part Number
Manufacturer
B1
RF Bead
2508051107Y0
Fair-Rite
C1, C5, C7, C9, C10,
C12, C14, C18
100 pF Chip Capacitors
GQM2195C2E101GB12D
Murata
C2
10 pF Chip Capacitor
GQM2195C2E100FB12D
Murata
C3
12 pF Chip Capacitor
GQM2195C2E120FB12D
Murata
C4
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C6, C13, C15
1000 pF Chip Capacitors
C2012X7R2E102M085AA
TDK
C8
39 pF Chip Capacitor
GQM2195C2E390GB12D
Murata
C11
4.7 pF Chip Capacitor
GQM2195C2E4R7BB12D
Murata
C16
10 F Chip Capacitor
GRM31CR61H106KA12L
Murata
C17
6.8 pF Chip Capacitor
GQM2195C2E6R8BB12D
Murata
J1
Right-Angle Breakaway Headers (3 Pins)
22-28-8360
Molex
L1, L4
120 nH Inductors
LL1608-FSLR12J
TOKO
L2
12 nH Inductor
LL1608-FSL12NJ
TOKO
L3
39 nH Inductor
LL1608-FSL39NJ
TOKO
L5
15 nH Inductor
LL1608-FSL15NJ
TOKO
L6
25 nH Inductor
0908SQ25N
Coilcraft
L7
8.1 nH Inductor
0908SQ8N1
Coilcraft
P1, P2
5.0 k Multi-turn Cermet Trimmer Potentiometer
3224W-1-502E
Bourns
Q1
RF Power LDMOS Amplifier
AFIC901NT1
Freescale
R1
51 , 1/4 W Chip Resistor
SG73P2ATTD51R0F
KOA Speer
R2, R8
15 k, 1/10 W Chip Resistors
RR1220P-153-B-T5
Susumu
R3, R9
10 k, 1/8 W Chip Resistors
CRCW080510K0FKEA
Vishay
R4
200 , 1/8 W Chip Resistor
CRCW0805200RJNEA
Vishay
R5, R7
1.2 k, 1/8 W Chip Resistors
CRCW08051K20FKEA
Vishay
R6
2.2 k, 1/8 W Chip Resistor
CRCW08052K20JNEA
Vishay
R10, R11
0 , 2.5 A Chip Resistors
CWCR08050000Z0EA
Vishay
PCB
FR4 (S--1000), 0.020, r = 4.8
D75372
MTL
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
80
31
60
29
50
Gps
28
40
27
33
26
32
Pout
25
24
23
340
31
30
VDD = 7.5 V, Pin = 3.0 dBm, lDQ1 = 10 mA, lDQ2 = 30 mA
360
380
400
420
440
460
Pout, OUTPUT
POWER (dBm)
Gps, POWER GAIN (dB)
70
D
30
D, DRAIN
EFFICIENCY (%)
32
480
500
520
29
540
FREQUENCY (MHz)
Figure 10. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power
VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz
0.5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
2.5
2
1.5
1
Pin = 3 dBm
Pin = 0 dBm
0.5
0
1.5
2.5
3.0
0.25
Pin = 3 dBm
Pin = 0 dBm
0
1.0
Detail A
2.0
VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz
3.5
4.0
1.5
2.0
2.5
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
DETAIL A
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
D, DRAIN
EFFICIENCY (%)
36
80
520 MHz
35
70
D
60
34
435 MHz 50
33
350 MHz
40
32
30
31
520 MHz
20
30
Gps
10
29 350 MHz
32
28
435 MHz
27
30
26
28
Pout
520 MHz
26
25
24
24 350 MHz
435 MHz
22
23
22
VDD = 7.5 Vdc, lDQ1 = 10 mA, lDQ2 = 30 mA 20
21
18
--8
–6
6
8
–4
–2
0
2
4
Pout, OUTPUT
POWER (dBm)
Gps, POWER GAIN (dB)
Figure 9. Output Power versus Gate--Source Voltage, 2nd Stage
Pin, INPUT POWER (dBm)
Figure 11. Power Gain, Drain Efficiency and Output Power
versus Input Power and Frequency
AFIC901N
10
RF Device Data
Freescale Semiconductor, Inc.
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
f = 350 MHz
Zsource
Zo = 75 
f = 520 MHz
f = 520 MHz
Zload
Zinterstage_out
f = 350 MHz
f = 520 MHz
f = 350 MHz
f = 350 MHz
Zinterstage_in
f = 520 MHz
f
MHz
Zsource1

Zload1

Zsource2

Zload2

350
57.4 + j77.2
60.5 – j16.5
36.3 + j5.69
22.0 + j6.12
360
60.6 + j94.9
62.7 – j20.6
37.2 + j6.57
21.7 + j6.35
370
69.0 + j100.2
65.1 – j24.8
38.3 + j8.07
21.5 + j6.92
380
79.2 + j105.3
66.5 – j29.4
39.4 + j9.66
21.2 + j7.57
390
91.5 + j109.9
65.1 – j30.7
39.2 + j11.6
20.3 + j8.45
400
106.3 + j113.5
65.3 – j28.6
38.6 + j14.6
19.4 + j9.81
410
124.0 + j115.1
65.3 – j26.2
38.0 + j17.3
18.6 + j11.0
420
144.6 + j113.6
64.3 – j23.4
37.3 + j19.2
17.8 + j11.9
430
167.9 + j107.3
62.6 – j21.0
36.7 + j20.1
17.2 + j12.5
440
192.4 + j94.1
60.6 – j19.3
36.7 + j20.3
16.9 + j12.7
450
196.1 + j89.7
58.9 – j18.6
36.8 + j20.4
16.7 + j12.6
460
197.5 + j86.7
57.6 – j19.1
36.8 + j20.5
16.6 + j12.2
470
198.8 + j83.7
56.8 – j20.8
36.8 + j20.6
16.5 + j11.7
480
199.9 + j80.6
56.3 – j23.7
36.8 + j20.7
16.3 + j11.3
490
201.0 + j77.5
55.8 – j27.6
36.9 + j20.8
15.9 + j11.1
500
202.0 + j74.3
54.9 – j32.3
36.9 + j20.9
15.5 + j11.2
510
202.8 + j71.2
53.4 – j36.9
36.9 + j21.0
15.0 + j11.7
520
206.6 + j70.1
51.5 – j40.8
37.7 + j23.5
14.6 + j12.5
Zsource = Test circuit impedance as measured from gate to gate.
Zload
50 
= Test circuit impedance as measured from drain to drain.
Input
Matching
Network
Interstage
Matching
Network
Stage 1
Zsource1
Zload1
Output
Matching
Network
Stage 2
Zsource2
50 
Zload2
Figure 12. UHF Broadband Series Equivalent Source and Load Impedance — 350--520 MHz
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
11
520 MHz NARROWBAND TEST FIXTURE
Table 13. 520 MHz Narrowband Performance VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, Pin = –1 dBm, f = 520 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Output Power
Pout
—
32.2
—
dBm
Power Gain
Gps
—
31.2
—
dB
Drain Efficiency
D
—
73.0
—
%
AFIC901N
12
RF Device Data
Freescale Semiconductor, Inc.
520 MHz NARROWBAND TEST FIXTURE — 3  5 (7.6 cm  12.7 cm)
C7
C14
C12
C19
D67108
C13
C10
C18
C2
L4
L3
C3
R3
R4
C20
L8
L7
C5
L1
C1
R1
L2 R2
L5
AFIC901N
Rev. 0
C17
C15
C16
C6
C4
C11
C8
C23
C21
C22
C9
Figure 13. AFIC901N Narrowband Test Circuit Component Layout — 520 MHz
Table 14. AFIC901N Narrowband Test Circuit Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
C1
8.2 pF Chip Capacitor
ATC600F8R2BT250XT
ATC
C2
240 pF Chip Capacitor
ATC600F241JT250XT
ATC
C3
39 pF Chip Capacitor
ATC600F390JT250XT
ATC
C4
15 pF Chip Capacitor
ATC600F150JT250XT
ATC
C5
4.7 pF Chip Capacitor
ATC600F4R7BT250XT
ATC
C6
12 pF Chip Capacitor
ATC600F120JT250XT
ATC
C7, C8, C9, C10, C11
240 pF Chip Capacitors
ATC600F241JT250XT
ATC
C12, C15
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C13, C16, C19, C22
0.1 F Chip Capacitors
C0805C104K1RACTU
Kemet
C14, C17, C18, C21
0.01 F Chip Capacitors
C0805C103K5RACTU
Kemet
C20, C23
330 F, 35 V Electrolytic Capacitors
MCGPR35V337M10X16-RH
Multicomp
L1, L7, L8
5.5 nH Inductors
0806SQ5N5
Coilcraft
L2
12.3 nH Inductor
0806SQ12N
Coilcraft
L3, L4
22 nH Inductors
0807SQ22N
Coilcraft
L5
8.9 nH Inductor
0806SQ8N9
Coilcraft
R1
8.2 , 1/3 W Chip Resistor
RL1220S-8R2-F
Susumu
R2
100 , 1/4 W Chip Resistor
CRCW1206100RFKEA
Vishay
R3
1.0 , 1/3 W Chip Resistor
RL1220S-1R0-F
Susumu
R4
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
Rogers R04350B, 0.030, r = 3.66
D67108
MTL
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND TEST FIXTURE
2.5
Pout, OUTPUT POWER (WATTS)
VDD = 7.5 Vdc, f = 520 MHz, VGS1 = 3 Vdc
Pin = 0 dBm
2
1.5
Pin = –3 dBm
1
0.5
0
0
1
3
2
4
5
VGS2’, GATE--SOURCE VOLTAGE (VOLTS)
33
70
50
32
Gps, POWER GAIN (dB)
90
Gps
D
31
30
30
10
29
35
30
Pout
28
25
27
26
25
--13
20
VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, f = 520 MHz
--11
–9
--7
--5
--3
--1
1
3
5
7
Pout OUTPUT
POWER (dBm)
34
D, DRAIN
EFFICIENCY (%)
Figure 14. Output Power versus Gate--Source
Voltage, 2nd Stage
15
Pin, INPUT POWER (dBm)
Figure 15. Power Gain, Drain Efficiency and Output Power
versus Input Power
f
MHz
Zsource1

Zload1

Zsource2

Zload2

520
50.3 + j30.9
84.4 + j93.6
3.5 + j17.8
12.3 + j11.4
Zsource = Test circuit impedance as measured from gate to gate.
Zload
50 
= Test circuit impedance as measured from drain to drain.
Input
Matching
Network
Interstage
Matching
Network
Stage 1
Zsource1
Zload1
Output
Matching
Network
Stage 2
Zsource2
50 
Zload2
Figure 16. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFIC901N
14
RF Device Data
Freescale Semiconductor, Inc.
0.50
3.00
4.40
0.30
2.6  2.6 solder pad with thermal
via structure. All dimensions in mm.
Figure 17. PCB Pad Layout for 24--Lead QFN 4  4
A901
WLYW
Figure 18. Product Marking
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
15
PACKAGE DIMENSIONS
AFIC901N
16
RF Device Data
Freescale Semiconductor, Inc.
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
17
AFIC901N
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
 Electromigration MTTF Calculator
 RF High Power Model
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.nxp.com/RF
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2016
Description
 Initial Release of Data Sheet
AFIC901N
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2016 Freescale Semiconductor, Inc.
AFIC901N
Document Number: AFIC901N
Rev. 0, 1/2016
20
RF Device Data
Freescale Semiconductor, Inc.
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