Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 520 (1) 20.9 74.9 4.9 136–941 MHz, 4 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 136–174 (2) 0.10 17.8 61.8 6.1 350–520 (3) 0.12 15.4 49.4 4.2 SOT--89 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 435(3) CW VSWR Pin (W) Test Voltage > 65:1 at all Phase Angles 0.24 (3 dB Overdrive) 9.0 Result No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 136–174 MHz VHF broadband reference circuit. 3. Measured in 350–520 MHz UHF broadband reference circuit. Features Characterized for Operation from 136 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band Exceptional Thermal Performance Extreme Ruggedness In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Typical Applications Source 2 1 2 3 Gate Source Drain Figure 1. Pin Connections Output Stage VHF Band Handheld Radio Output Stage UHF Band Handheld Radio Output Stage for 700–800 MHz Handheld Radio Driver for 10–1000 MHz Applications Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +30 Vdc Gate--Source Voltage VGS –6.0, +12 Vdc Operating Voltage VDD 12.5, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C TJ –40 to +150 C PD 28 0.23 W W/C Symbol Value (2,3) Unit RJC 4.4 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 4.0 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1000 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 67 Adc) VGS(th) 1.7 2.2 2.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 700 mAdc) VDS(on) — .22 — Vdc gfs — 4.0 — S Reverse Transfer Capacitance (VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.63 — pF Output Capacitance (VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 34.8 — pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 57.6 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 7.5 Vdc, ID = 4.0 Adc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT05MS004NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 16 dBm, f = 520 MHz Common--Source Amplifier Output Power Drain Efficiency Pout — 4.9 — W D — 74.9 — % AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 100 Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 10 Crss 1 0 2 6 4 10 8 12 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 109 MTTF (HOURS) VDD = 7.5 Vdc ID = 0.62 Amps 108 0.77 Amps 107 0.91 Amps 106 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 3. MTTF versus Junction Temperature — CW AFT05MS004NT1 4 RF Device Data Freescale Semiconductor, Inc. 520 MHz NARROWBAND PRODUCTION TEST FIXTURE VGG C1 B1 C3 VDD C11 C2 C10 C4 C7 C12 C9 R6 C5 C6 R1 R2 R3 R4 R5 L1 C13 C16 L2 C8 C14 C15 AFT05MS004N Rev. 0 D57923 Figure 4. AFT05MS004NT1 Narrowband Test Circuit Component Layout — 520 MHz Table 6. AFT05MS004NT1 Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair--Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C9 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 11 pF Chip Capacitor ATC100B110JT500XT ATC C6, C7 13 pF Chip Capacitors ATC100B130JT500XT ATC C8, C15 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC C12 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp C13, C14 16 pF Chip Capacitors ATC100B160JT500XT ATC C16 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC L1 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft L2 5 nH, 2 Turn Inductor A02TKLC Coilcraft R1, R2, R3, R4, R5 1.5 , 1/4 W Chip Resistors RC1206FR--071R5L Yageo R6 27 , 1/4 W Chip Resistor CRCW120627R0FKEA Vishay PCB Rogers RO4350, 0.030, r = 3.66 D57923 MTL AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 5 AFT05MS004NT1 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT VBIAS Z1 C1 + Z2 C5 Z3 C3 C7 C6 Z5 Z6 R6 Z7 R5 R4 R3 R2 R1 Z8 DUT Z9 C15 Z10 L1 C9 Z11 C10 0.160 0.320 0.620 Taper Microstrip 0.045 0.620 Microstrip 0.387 0.620 Microstrip 0.273 0.620 Microstrip Z7 Z8 0.555 0.320 Microstrip Z4 Z6 0.055 0.320 Microstrip Z3 Z5 0.490 0.120 Microstrip Z2 Description 0.328 0.080 Microstrip Z1 Microstrip Z12 C13 C11 C14 Z13 0.055 0.320 Microstrip 0.587 0.120 Microstrip 0.078 0.120 Microstrip 0.238 0.080 Microstrip Z13 Z14 Z15 Z16 0.162 0.620 0.320 Taper Microstrip 0.377 0.320 Microstrip Z12 0.062 0.620 Microstrip Z14 VSUPPLY Z11 Z10 Description 0.708 0.620 Microstrip Z9 Microstrip L2 C12 + Figure 5. AFT05MS004NT1 Narrowband Test Circuit Schematic — 520 MHz Z4 C4 Table 7. AFT05MS004NT1 Narrowband Test Circuit Microstrips — 520 MHz C2 B1 C8 Z15 C16 Z16 RF OUTPUT TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND REFERENCE CIRCUIT Pout, OUTPUT POWER (WATTS) 6 VDD = 7.5 Vdc, f = 520 MHz 5 4 Pin = 0.04 W 3 2 Pin = 0.02 W 1 0 1.5 1 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage 24 90 80 Gps 18 70 15 60 12 50 9 40 D 6 30 Pout 3 VDD = 7.5 Vdc, IDQ = 100 mA f = 520 MHz 0 0.02 0 0.04 0.08 0.06 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) 21 20 10 0.1 Pin, INPUT POWER (WATTS) Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W f MHz Zsource Zload 520 1.35 + j2.15 2.10 + j1.70 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 7 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Table 8. 136–174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 100 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 135 0.10 17.8 62.3 6.0 155 0.06 20.2 69.1 6.0 175 0.10 17.9 61.8 6.0 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 155 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.2 (3 dB Overdrive) Test Voltage, VDD Result 9.0 No Device Degradation AFT05MS004NT1 8 RF Device Data Freescale Semiconductor, Inc. 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT J1 C11 C12 C1 C10 L4 C13 C14 C15 C9 C16 C17 C18 L6 C2 C3 R1 L1 C4 C8 Q1 L2 L5 L3 C7 C5 C6 D61839 AFT05MS004N Rev. 0 (136–174 MHz) Figure 9. AFT05MS004NT1 VHF Broadband Reference Circuit Component Layout — 136–174 MHz Table 10. AFT05MS004NT1 VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz Part Description Part Number Manufacturer C1, C10, C14, C17 1 nF Chip Capacitors 2012X7R2E102M TDK C2 39 pF Chip Capacitor ATC600F390JT250XT ATC C3, C8 56 pF Chip Capacitors ATC600F560JT250XT ATC C4, C5 68 pF Chip Capacitors ATC600F680JT250XT ATC C6, C15, C16 100 pF Chip Capacitors ATC600F101JT250XT ATC C7 150 pF Chip Capacitor ATC600F151JT250XT ATC C9 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C11, C12 10 F, 50 V Electrolytic Capacitors UVR1H100MDD Nichicon C13, C18 1 F Chip Capacitors GRM21BR71H105KA12L Murata J1 Breakaway Header, Right--Angle 3 Pins 22-28-8360 Molex L1 13.7 nH Inductor 0807SQ14N Coilcraft L2 12.3 nH Inductor 0806SQ12N Coilcraft L3, L4 25.0 nH Inductors 0908SQ25N Coilcraft L5 15.7 nH Inductor 0806SQ16N Coilcraft L6 27.3 nH Inductor 0908SQ27N Coilcraft Q1 RF Power LDMOS Transistor AFT05MS004NT1 Freescale R1 33 , 1/10 W Chip Resistor CRCW080533R0JNEA Vishay PCB 0.020, r = 4.8, FR4 (S--1000) D61839 MTL AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 9 AFT05MS004NT1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 C2 Z3 Z5 C4 Z6 C5 Z7 C6 Z8 C13 L2 C14 Z9 C15 Z10 Z11 R1 DUT Z12 Z13 Z16 L3 Z14 C7 Z17 L5 C17 Z18 C18 C8 0.010 0.050 Microstrip 0.012 0.050 Microstrip 0.010 0.050 Microstrip 0.010 0.050 Microstrip 0.012 0.040 Microstrip 0.265 0.040 Microstrip Z3 Z4 Z5 Z6* Z7 Z8 * Line length includes microstrip bends 0.142 0.050 Microstrip Z2 Description 0.120 0.050 Microstrip Microstrip Z1 Microstrip Description Microstrip 0.030 0.084 Microstrip 0.040 0.040 Microstrip Z14 Z15 Z22 Z21 Z20 0.015 0.170 Microstrip Z13 Z18 Z17* Z16 Z19 0.070 0.140 Microstrip 0.032 0.300 Microstrip 0.070 0.300 Microstrip 0.070 0.140 Microstrip Z12 Z11 Z10 Z9 Z20 C9 Z21 0.120 0.050 Microstrip 0.010 0.050 Microstrip 0.010 0.050 Microstrip 0.010 0.050 Microstrip 0.010 0.050 Microstrip 0.357 0.050 Microstrip 0.015 0.170 Microstrip Description L6 VSUPPLY Z19 C12 + Figure 10. AFT05MS004NT1 VHF Broadband Reference Circuit Schematic — 136–174 MHz L1 C11 + C16 Table 11. AFT05MS004NT1 VHF Broadband Reference Circuit Microstrips — 136–174 MHz C3 Z4 VBIAS L4 Z15 C10 Z22 RF OUTPUT TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT 22 21 80 D 20 70 19 60 18 50 Gps 17 8 16 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) D, DRAIN EFFICIENCY (%) 90 7 15 VDD = 7.5 Vdc Pin = 0.1 W IDQ = 100 mA 14 13 135 140 150 145 155 6 Pout 165 160 170 5 4 175 f, FREQUENCY (MHz) Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin f = 155 MHz 1 5 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 6 VDD = 7.5 Vdc, Pin = 0.1 W 4 3 VDD = 7.5 Vdc, Pin = 0.05 W 2 1 0 0 0.5 1 1.5 2 3 2.5 0.8 3.5 VDD = 7.5 Vdc Pin = 0.1 W 0.6 VDD = 7.5 Vdc Pin = 0.05 W 0.4 0.2 0 Detail A f = 155 MHz 0 0.5 1 1.5 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A D, DRAIN EFFICIENCY (%) 80 25 D 70 155 MHz 24 VDD = 7.5 Vdc 60 23 IDQ = 100 mA 50 22 175 MHz 135 MHz 40 21 20 30 19 20 155 MHz 10 18 175 MHz 17 Pout 8 135 MHz 16 7 Gps 6 15 5 14 155 MHz 4 13 175 MHz 3 12 11 2 135 MHz 10 1 9 0 0.1 0.01 0.3 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) Figure 12. Output Power versus Gate--Source Voltage Pin, INPUT POWER (WATTS) Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 11 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Zo = 25 f = 175 MHz f = 135 MHz Zsource Zload f = 175 MHz f = 135 MHz VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W f MHz Zsource Zload 135 7.02 + j13.05 2.24 - j1.21 140 8.07 + j13.00 2.42 - j0.87 145 9.05 + j12.43 2.56 - j0.54 150 9.68 + j11.26 2.79 - j0.24 155 9.16 + j9.82 3.08 - j0.07 160 7.39 + j9.21 3.23 - j0.03 165 5.83 + j10.15 3.52 - j0.09 170 5.09 + j11.62 3.77 - j0.01 175 5.06 + j12.97 3.40 - j0.27 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 14. VHF Broadband Series Equivalent Source and Load Impedance — 136–174 MHz AFT05MS004NT1 12 RF Device Data Freescale Semiconductor, Inc. 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 12. 350–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 50 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 350 0.11 15.5 48.7 4.0 470 0.04 19.8 67.7 4.0 520 0.09 16.3 71.1 4.0 Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 435 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.24 (3 dB Overdrive) Test Voltage, VDD Result 9.0 No Device Degradation AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 13 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT J1 B1 B2 C6 C7 C1 C12 R1 C11 C8 C5 L1 C2 R2 L2 L5 L3 C10 Q1 L4 C9 C4 C3 D56664 AFT05MS004N Rev. 0 (350–520 MHz) Figure 15. AFT05MS004NT1 UHF Broadband Reference Circuit Component Layout — 350–520 MHz Table 14. AFT05MS004NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz Part Description Part Number Manufacturer B1, B2 RF Beads 2743019447 Fair--Rite C1, C10 18 pF Chip Capacitors GQM2195C2E180FB12D Murata C5, C8, C12 100 pF Chip Capacitors GQM2195C2E101GB12D Murata C2, C3 15 pF Chip Capacitors GQM2195C2E150FB12D Murata C4 56 pF Chip Capacitor GQM2195C2E560GB12D Murata C6 1 F Chip Capacitor GRM31CR72A105KA01L Murata C7 10 F Chip Capacitor GRM31CR61H106KA12L Murata C9 39 pF Chip Capacitor GQM2195C2E390GB12D Murata C11 5.1 pF Chip Capacitor GQM2195C2E5R1BB12D Murata J1 Breakaway Header, Right--Angle 3 Pins 22-28-8360 Molex L1, L2 5.5 nH Inductors 0806SQ5N5 Coilcraft L3 16.6 nH Inductor 0908SQ17N Coilcraft L4 2.55 nH Inductor 0906--3JLC Coilcraft L5 8.1 nH Inductor 0908SQ8N1 Coilcraft Q1 RF Power LDMOS Transistor AFT05MS004NT1 Freescale R1, R2 22 , 1/10 W Chip Resistors RR1220Q--220--D Susumu PCB 0.020, r = 4.8, FR4 (S--1000) D56664 MTL AFT05MS004NT1 14 RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 15 RF INPUT Z1 C1 Z2 L1 Z3 L2 Z5 C3 C6 Z6 B1 C4 Z7 C5 Z10 Z8 Z11 R2 Z9 R1 Z12 DUT Z13 Z14 Z17 Z15 L3 Z18 Z16 C9 Z19 C8 L4 B2 Z20 C7 C10 Z21 0.160 0.050 Microstrip 0.260 0.050 Microstrip 0.095 0.300 Microstrip Z6* Z7 Z8 * Line length includes microstrip bends 0.070 0.050 Microstrip 0.090 0.050 Microstrip Z5* 0.070 0.050 Microstrip Z3 Z4 0.090 0.050 Microstrip Z2 Description 0.150 x 0.050 Microstrip Z1 Microstrip 0.065 0.034 Microstrip 0.057 0.300 Microstrip 0.070 0.140 Microstrip 0.070 0.140 Microstrip 0.057 0.170 Microstrip 0.140 0.060 Microstrip 0.200 0.034 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Description 0.140 0.060 Microstrip Z9 Microstrip Z24 Z23 Z22 Z21 Z20 Z19* Z18 Z17 Microstrip Description Z22 C11 Z23 0.150 0.050 Microstrip 0.050 0.050 Microstrip 0.050 0.050 Microstrip 0.070 0.050 Microstrip 0.070 0.050 Microstrip 0.270 0.050 Microstrip 0.150 0.050 Microstrip 0.190 0.170 Microstrip Table 15. AFT05MS004NT1 UHF Broadband Reference Circuit Microstrips — 350–520 MHz L5 VSUPPLY Figure 16. AFT05MS004NT1 UHF Broadband Reference Circuit Schematic — 350–520 MHz C2 Z4 VBIAS C12 RF Z24 OUTPUT TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT 20 70 18 60 17 50 16 40 Gps 15 7 14 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 19 D, DRAIN EFFICIENCY (%) 80 D 6 13 VDD = 7.5 Vdc Pin = 0.12 W IDQ = 50 mA 12 11 340 360 380 400 420 440 5 Pout 460 480 500 520 4 3 540 f, FREQUENCY (MHz) Figure 17. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant at a Constant Pin f = 435 MHz 1.0 5 4 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 6 VDD = 7.5 Vdc, Pin = 0.12 W 3 VDD = 7.5 Vdc, Pin = 0.06 W 2 1 0.8 0 0.5 1 1.5 2 2.5 VDD = 7.5 Vdc Pin = 0.06 W 0.6 VDD = 7.5 Vdc Pin = 0.12 W 0.4 0.2 0 Detail A 0 f = 435 MHz 0 1 0.5 1.5 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 3 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 7 Pout 6 5 Gps 4 3 2 1 0 0.3 D 435 MHz 350 MHz 520 MHz 435 MHz 435 MHz 350 MHz 520 MHz 0.1 D, DRAIN EFFICIENCY (%) 25 24 VDD = 7.5 Vdc 23 IDQ = 50 mA 22 21 20 19 18 17 520 MHz 16 15 350 MHz 14 13 12 11 10 0.01 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) Figure 18. Output Power versus Gate--Source Voltage Pin, INPUT POWER (WATTS) Figure 19. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS004NT1 16 RF Device Data Freescale Semiconductor, Inc. 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT f = 520 MHz Zsource Zo = 5 f = 350 MHz f = 520 MHz Zload f = 350 MHz VDD = 7.5 Vdc, IDQ = 50 mA, Pout = 4 W f MHz Zsource Zload 350 2.27 - j1.72 3.55 + j1.20 360 2.41 - j1.91 3.61 + j0.92 370 2.55 - j2.11 3.66 + j0.64 380 2.68 - j2.31 3.71 + j0.36 390 2.74 - j2.38 3.71 + j0.15 400 2.76 - j2.36 3.69 + j0.02 410 2.77 - j2.35 3.66 + j0.18 420 2.78 - j2.35 3.67 + j0.34 430 2.78 - j2.43 3.82 + j0.48 440 2.79 - j2.50 3.97 + j0.62 450 2.79 - j2.57 4.13 + j0.76 460 2.44 - j2.70 4.00 + j0.95 470 2.02 - j2.84 3.80 + j1.15 480 1.59 - j2.98 3.61 + j1.36 490 1.37 - j3.20 3.53 + j1.46 500 1.45 - j3.53 3.62 + j1.41 510 1.52 - j3.86 3.71 + j1.36 520 1.60 - j4.19 3.80 + j1.31 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 20. UHF Broadband Series Equivalent Source and Load Impedance — 350–520 MHz AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 17 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 21. PCB Pad Layout for SOT--89A AFT504 AWLYWZ Figure 22. Product Marking AFT05MS004NT1 18 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 19 AFT05MS004NT1 20 RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 RF Device Data Freescale Semiconductor, Inc. 21 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2014 Description Initial Release of Data Sheet AFT05MS004NT1 22 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. AFT05MS004NT1 Document Number: RF Device Data AFT05MS004N Rev. 0, 7/2014 Freescale Semiconductor, Inc. 23