SPN04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances 3 2 • Improved transconductance Type SPN04N60S5 Package SOT-223 1 Ordering Code Q67040-S4211 VPS05163 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TA = 25 °C 0.8 TA = 70 °C 0.65 3 Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T A = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C Rev. 2.2 Page 1 V 2005-02-21 SPN04N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 4.5 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. - 20 - @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 - - 260 Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=4.5A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=200µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.2 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2.8A, Tj=25°C - 0.8 0.95 Tj=150°C - 2.3 - f=1MHz, open Drain - 20 - Page 2 nA 2005-02-21 SPN04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=0.65A Input capacitance Ciss V GS=0V, V DS=25V, - 600 - Output capacitance Coss f=1MHz - 325 - Reverse transfer capacitance Crss - 15 - - 20 - - 35 - Effective output capacitance,2) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance,3) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 40 - Rise time tr ID=0.8A, RG=18Ω - 20 - Turn-off delay time t d(off) - 130 - Fall time tf - 30 - - 4.1 - - 9.2 - - 17 - - 8 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg pF VDD=350V, ID=0.8A VDD=350V, ID=0.8A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=0.8A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.2 Page 3 2005-02-21 SPN04N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous Symbol IS Conditions TA=25°C Values Unit min. typ. max. - - 0.8 - - 3 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 0.85 1.05 V Reverse recovery time trr VR=350V, IF =IS , - 200 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 1.2 - µC Rev. 2.2 Page 4 2005-02-21 SPN04N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TA) ID = f ( V DS ) parameter : D = 0 , T A=25°C 1.9 10 1 SPN04N60S5 W A 1.6 10 0 1.2 ID Ptot 1.4 1 10 -1 0.8 0.6 10 -2 0.4 0.2 0 0 20 40 60 80 100 °C 120 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -3 0 10 160 10 1 2 10 10 V VDS TA 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 2 10 14 K/W A 10 1 11V 11 10 ID Z thJC 13V 12 10 0 9 8 9V 7 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -2 6 5 4 3 2 7V 1 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp Rev. 2.2 0 0 4 8 12 16 20 V 26 VDS Page 5 2005-02-21 3 SPN04N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 8 5 20V 12V 10V 9.5V RDS(on) 9V 8.5V ID A mΩ 8V 4 3.5 4 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 7.5V 2.5 7V 2 2 6.5V 6V 0 0 5 10 1.5 V 15 1 0 25 1 2 3 4 5 6 7 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 0.65 A, VGS = 10 V parameter: tp = 10 µs 5.5 SPN04N60S5 8.5 16 Ω A 12 4 3.5 ID RDS(on) 4.5 10 3 8 2.5 6 2 1.5 4 98% 1 typ 2 0.5 0 -60 -20 20 60 100 °C 180 Tj Rev. 2.2 Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2005-02-21 SPN04N60S5 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 0.8 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPN04N60S5 V SPN04N60S5 A 0.2 VDS max 10 0 10 IF VGS 12 0.8 V DS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 0 0 4 8 12 16 20 nC 10 -2 0 28 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Drain-source breakdown voltage 12 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 4 SPN04N60S5 pF V Ciss 660 C V(BR)DSS 10 3 680 10 2 640 Coss 620 10 1 600 580 Crss 10 0 560 540 -60 -20 20 60 100 °C 180 Tj Rev. 2.2 10 -1 0 10 20 30 40 50 60 70 80 V 100 VDS Page 7 2005-02-21 SPN04N60S5 13 Typ. Coss stored energy Eoss=f(VDS) 3.5 µJ Eoss 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 2.2 Page 8 2005-02-21 SPN04N60S5 Rev. 2.2 Page 9 2005-02-21 SPN04N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 10 2005-02-21