SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET® Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS D2PAK-5 • Industrial D (Tab, 3) 1 2 3 4 5 (1) (2) G KELVIN (4) SENSE G D KELVIN S SENSE S (5) Ordering Information: SUM60N08-07C SUM60N08-07C-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C)d TC = 100 °C ID IDM Pulsed Drain Current d 60a 240 60 Avalanche Current IAR 60a EAR 180 Maximum Power Dissipationa TC = 25 °C PD TA = 25 °C Operating Junction and Storage Temperature Range A a Continuous Diode Current (Diode Conduction) L = 0.1 mH V 60a IS Repetitive Avalanche Energyb Unit 300c 3.75d mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.5 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd d PCB Mount Junction-to-Case °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71834 S-80273-Rev. D, 11-Feb-08 www.vishay.com 1 SUM60N08-07C Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, IDS = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 500 ID(on) VDS = 5 V, VGS = 10 V 120 VGS = 10 V, ID = 25 A Drain-Source On-State Resistancea 4 gfs µA 0.007 0.010 VGS = 10 V, ID = 25 A, TJ = 175 °C Forward Transconductancea nA A 0.0054 VGS = 10 V, ID = 25 A, TJ = 125 °C rDS(on) V Ω 0.013 VDS = 15 V, ID = 20 A 100 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 6500 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 920 400 110 VDS = 35 V, VGS = 10 V, ID = 60 A 150 nC 30 30 VDD = 35 V, RL = 0.6 Ω ID ≅ 60 A, VGEN = 10 V, RG = 2.5 Ω tf 15 20 130 200 75 115 120 180 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 60 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 60 A, VGS = 0 V 1.0 1.5 V 75 115 ns IF = 60 A, di/dt = 100 A/µs 3.5 5 A 0.13 0.29 µC 2370 2470 trr IRM(REC) A Qrr Current Sense Characteristics Current Sensing Ratio Mirror Active Resistance r ID = 3.5 A, VGSS = 10 V, RSENSE = 2.0 Ω rm(on) VGS = 10 V, ID = 10 mA 2270 10 Ω Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71834 S-80273-Rev. D, 11-Feb-08 SUM60N08-07C Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 150 5V 100 50 120 80 TC = 125 °C 40 25 °C - 55 °C 4V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 100 120 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 0.020 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 200 25 °C 150 125 °C 100 50 0 0.015 0.010 VGS = 10 V 0.005 0.000 0 15 30 45 60 75 90 0 20 40 VGS - Gate-to-Source Voltage (V) 80 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 10000 V GS - Gate-to-Source Voltage (V) Ciss 8000 C - Capacitance (pF) 60 6000 4000 Coss 2000 Crss VGS = 35 V ID = 60 A 16 12 8 4 0 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71834 S-80273-Rev. D, 11-Feb-08 75 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM60N08-07C Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 - 50 TJ = 150 °C 10 TJ = 25 °C 1 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature ( °C) 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 ID = 10 mA V (BR)DSS (V) 94 88 82 76 70 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature THERMAL RATINGS 1000 75 10 µs I D - Drain Current (A) I D - Drain Current (A) 60 45 30 100 Limited by rDS(on)* 1 ms 10 ms 100 ms DC 10 TC = 25 °C Single Pulse 1 15 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature www.vishay.com 4 100 µs 0.1 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Document Number: 71834 S-80273-Rev. D, 11-Feb-08 SUM60N08-07C Vishay Siliconix THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SENSE DIE TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 r DS(on) - On-Resistance (Ω) r DS(on) - On-Resistance (Ω) 20 15 VGS = 10 V 10 5 0 0.00 40 ID = 10 mA 30 20 10 0 0.02 0.04 0.06 ISENSE (A) 0.08 0.10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-Source Voltage On-Resistance vs. Sense Current 5000 4000 RS = 5 Ω Ratio 3000 RS = 6 Ω G RS = 2 Ω 2000 RS = 1 Ω VG 1000 SENSE S KELVIN RS 0 0 4 8 12 16 VGS - Gate-to-Source Voltage (V) 20 Current Ratio (I(MAIN)/IS) vs. Gate-Source Voltage (Figure 1) Figure 1. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71834 Document Number: 71834 S-80273-Rev. D, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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