NTMFS4841N D

NTMFS4841N
Power MOSFET
30 V, 57 A, Single N−Channel, SO−8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
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V(BR)DSS
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
RDS(ON) MAX
7.0 mW @ 10 V
30 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
13.1
A
Continuous Drain
Current RqJA
(Note 1) Steady
State
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJA −
t = 10 sec
TA = 25°C
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
TA = 25°C
PD
TC = 25°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
ID
PD
Operating Junction and Storage
Temperature
Source Current (Body Diode)
A
8.3
W
0.87
A
57
41
PD
W
41.7
IDM
171
A
TJ,
TSTG
−55 to
+150
°C
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4841N
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
IS
35
A
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W)
EAS
180
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
May, 2012 − Rev. 8
D
21.7
Drain to Source dV/dt
© Semiconductor Components Industries, LLC, 2012
MARKING
DIAGRAM
W
5
0.45
ID
TC = 85°C
TA = 25°C
A
19.9
6
TC = 85°C
tp=10ms
N−CHANNEL MOSFET
2.6
TA = 85°C
Continuous Drain
Current RqJC
(Note 1)
S (1,2,3)
W
2.17
14.4
TA = 85°C
TA = 25°C
G (4)
1.13
ID
TA = 85°C
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
PD
TA = 85°C
TA = 25°C
D (5,6)
9.5
TA = 85°C
Steady
State
57 A
11.4 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
Device
Package
Shipping†
NTMFS4841NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4841NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4841N/D
NTMFS4841N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3
Junction−to−Ambient – Steady State (Note 1)
RqJA
57.7
Junction−to−Ambient – Steady State (Note 2)
RqJA
143.4
Junction−to−Ambient − t = 10 sec
RqJA
25
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.5
5.6
VGS = 10 V to
11.5 V
ID = 30 A
4.7
ID = 15 A
4.6
VGS = 4.5 V
ID = 30 A
9.2
ID = 15 A
8.5
gFS
VDS = 15 V, ID = 15 A
mV/°C
7.0
11.4
16
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
1436
VGS = 0 V, f = 1 MHz, VDS = 12 V
348
CRSS
177
Total Gate Charge
QG(TOT)
11.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2.0
5.0
pF
17
nC
5.1
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
25.4
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
13.5
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
66.5
15.5
7.5
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4841N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.1
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24.2
ns
22.8
5.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
20.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
11.6
ns
8.9
QRR
10.7
nC
Source Inductance
LS
0.93
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.005
1.84
3.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
W
NTMFS4841N
5.5 V to 10 V
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 5 V
4.5 V
4V
3.8 V
3.6 V
3.4 V
0
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
1.8
1.7
1.6
1
2
4
3
5
VDS = 10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
2
1
3
4
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
3
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
4
6
7
8
9
10
11
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.017
TJ = 25°C
0.014
VGS = 4.5 V
0.011
0.008
VGS = 11.5 V
0.005
0.002
10
15
20
25
30
35
40
45
50
55
60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1000
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
TYPICAL PERFORMANCE CURVES
1.4
1.3
1.2
1.1
1.0
0.9
0.8
TJ = 125°C
100
10
TJ = 25°C
1
0.7
0.6
−55 −35 −15
0.1
5
25
45
65
85
105 125 145
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4841N
TYPICAL PERFORMANCE CURVES
C, CAPACITANCE (pF)
TJ = 25°C
Ciss
1800
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2200
2000
1600
Ciss
1400
1200
1000
800
Crss
600
Coss
400
200
0
10
Crss
5
0
5
VGS
VDS
10
15
20
30
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
100
tr
td(off)
1
td(on)
tf
1
9
8
7
6
5
4
10
RG, GATE RESISTANCE (W)
VDD = 15 V
VGS = 11.5 V
ID = 30 A
TJ = 25°C
3
2
1
0
0
0.1
I D, DRAIN CURRENT (AMPS)
TJ = 25°C
15
10
5
0.6
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
100 ms
1 ms
10 ms
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
6 8 10 12 14 16 18 20 22 24 26
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10 ms
10
4
20
0
0.5
100
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
2
VGS = 0 V
25
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
QGD
QGS
30
VDD = 15 V
ID = 15 A
VGS = 11.5 V
10
QT
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
12
11
10
180
160
ID = 19 A
140
120
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4841N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
10
100
PULSE WIDTH (ms)
1
1000
Figure 13. EAS vs. Pulse Width
RqJA, EFFECTIVE TRANSIENT
THERMAL RESPONSE
1.0
0.1
Normalized to RqJA at Steady State (1 inch)
0.01
0.001
1E−04
0.0086 W 0.026 W 0.078 W 0.748 W
Single Pulse
1E−03
0.00004
1E−02
0.0002
1E−01
0.0006
0.004
1E+00
t, time (s)
Figure 14. FET Thermal Response
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6
4.92 W
0.033
7.46 W
0.139
1E+01
15.76 W
1.03
23 W
2.4
1E+02
51 W
57
Ambient
1E+03
NTMFS4841N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4841N/D