1416GN-600V

1416GN-600V
600 Watts - 50 Volts, 300 s, 10%
Broad Band 1400 - 1600 MHz
GENERAL DESCRIPTION
The 1416GN-600V is an internally matched, COMMON SOURCE, class
AB GaN on SiC HEMT transistor capable of providing over 16.8dB gain,
600 Watts of pulsed RF output power at 300μs pulse width, 10% duty
factor across the 1400 to 1600 MHz band. The transistor has internal
pre-match for optimal performance. This hermetically sealed transistor
can be used for broadband avionics data link applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
1200 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
150 V
Gate-Source Voltage (VGS)
-8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions
Min
Typ
Max
Units
Pout
Output Power
Pout=600W, Freq=1400, 1500, 1600 MHz
600
Gp
Power Gain
Pout=600W, Freq=1400, 1500, 1600 MHz
16.8
17.4
dB
d
Drain Efficiency
Pout=600W, Freq=1400, 1500, 1600 MHz
58
62
%
Dr
Droop
Pout=600W, Freq=1400, 1500, 1600 MHz
0.9
VSWR-T
Load Mismatch Tolerance
Pout=600W, Freq=1600 MHz
3:1
Өjc
Thermal Resistance
Pulse Width=300uS, Duty=10%
0.28

W
dB
°C/W
Constant Gate Bias Condition: Vdd=+50V, Idq=100mA average current (Vgs= -2.0 ~ -4.5V )
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VgS = -8V, VD = 50V
64
mA
IG(Off)
Gate leakage current
VgS = -8V, VD = 0V
20
mA
BVDSS
Drain-source breakdown voltage
Vgs =-8V, ID = 64mA
150
Issue August 2014
Export Classification: EAR-99
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
V
1416GN-600V
600 Watts - 50 Volts, 300 s, 10%
Broad Band 1400 - 1600 MHz
TYPICAL BROAD BAND PERFORMACE DATA
Freq(GH)
Pin (W)
Pout (W)
Id (A)
RL (dB)
Eff(%)
G (dB)
Droop (dB)
1.4
12
667
2.25
-24.8
62%
17.44
0.5
1.5
12
658
2.22
-13.6
62%
17.38
0.5
1.6
12
664
2.09
-11.1
66%
17.42
0.3
Test Fixture Available Upon Request
TRANSISTOR IMPEDANCE INFORMATION
Note: Zsource is looking into the input circuit;
Z Load is looking into the output circuit.
Impedance Data
Freq (GHz)
Zs
Zl
1.4
1.1-j2.1
1.8-j1.1
1.5
1.1-j1.6
1.76-j1.5
1.6
1.1-j1.1
1.3-j1.7
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1416GN-600V
600 Watts - 50 Volts, 300 s, 10%
Broad Band 1400 - 1600 MHz
55-KR PACKAGE DIMENSION
Dimension
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min (mil)
370
498
700
830
1030
86
136
385
130
003
120
100
080
065
Min (mm)
9.40
12.65
17.78
21.08
26.16
2.18
3.45
9.78
3.30
.076
3.04
2.54
2.03
1.65
Max (mil)
372
500
702
832
1032
116
166
387
132
004
144
114
90
66
Max (mm)
9.44
12.7
17.83
21.13
26.21
2.946
4.22
9.83
3.35
0.10
3.66
2.90
2.29
1.68
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1416GN-600V
600 Watts - 50 Volts, 300 s, 10%
Broad Band 1400 - 1600 MHz
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such
Agreement will also apply . This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is
granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels
or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and
conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision Level / Date
0.3 / August 5, 2014
Para. Affected
-
Description
Initial Preliminary Release
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
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