APTDF60H1201G Fast Diode Full Bridge Power Module 3 4 Application CR1 1 2 Features CR3 5 6 CR2 7 VRRM = 1200V IC = 60A @ Tc = 80°C CR4 8 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 9 10 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 1200 V TC = 25°C 82 TC = 80°C TJ = 45°C 60 A 500 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTDF60H1201G – Rev 1 October, 2012 Absolute maximum ratings APTDF60H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 60A IF = 120A Tj = 125°C IF = 60A Tj = 25°C VR = 1200V Tj = 125°C Min Typ 2.5 3 1.8 Max 3 V 100 500 VR = 200V Unit 70 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 60A VR = 800V di/dt = 200A/µs IF = 60A VR = 800V di/dt=1000A/µs Min Typ Tj = 25°C 265 Tj = 125°C 350 Tj = 25°C Tj = 125°C 560 2890 Tj = 25°C 5 Tj = 125°C 13 Tj = 125°C Max Unit ns nC A 150 ns 4700 nC 40 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Typ Max 0.9 175 125 100 3 80 Unit °C/W V °C N.m g 2-5 APTDF60H1201G – Rev 1 October, 2012 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF60H1201G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) 125 100 TJ=125°C 75 50 TJ=25°C 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 400 TJ=125°C VR=800V 300 120 A 200 60 A 30 A 100 0 0 3.5 200 TJ=125°C VR=800V 6 60 A 4 30 A 3 2 1 0 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 800 1000 1200 50 TJ=125°C VR=800V 40 120 A 60 A 30 A 30 20 10 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 400 Max. Average Forward Current vs. Case Temp. 100 Duty Cycle = 0.5 TJ=175°C 80 300 IF(AV) (A) C, Capacitance (pF) 120 A 5 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 7 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 200 100 60 40 20 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-5 APTDF60H1201G – Rev 1 October, 2012 IF, Forward Current (A) 150 APTDF60H1201G SP1 Package outline (dimensions in mm) www.microsemi.com 4-5 APTDF60H1201G – Rev 1 October, 2012 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTDF60H1201G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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