WILLAS FM120-M+ DTC114ECATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. Features • Low profile surface mounted application in order to Pb-Free package is space. available optimize board power high efficiency. RoHS• Low product forloss, packing code suffix ”G” • High current capability, low forward voltage drop. Halogen free product for packing code suffix “H” • High surge capability. Epoxy meets ULfor94overvoltage V-0 flammability rating protection. • Guardring Moisure Sensitivity Level 1 • Ultra high-speed switching. Built-in bias resistors enable the configuration of an inverter circuit epitaxial planar chip, metal silicon junction. • Silicon without connecting external input resistors standards of • Lead-free parts meet environmental The bias resistors consist of thin-film resistors with complete MIL-STD-19500 /228 isolation to allow negative biasing of the product for packing code suffix "G"input. They also have the • RoHS advantage of almost completely eliminating parasitic effects. Halogen free product for packing code suffix "H" Only the on/off conditions need to be set for operation, making Mechanical data device design easy • Epoxy : UL94-V0 rated flame retardant • • Case : Molded plastic, SOD-123H , Terminals :Plated terminals, solderable per MIL-STD-750 Absolute• maximum ratings @ 25к • • • Method 2026 Parameter Polarity : Indicated by cathode band Supply voltage Input voltage Mounting Position : Any Output current Weight : Approximated 0.011 gram Power dissipation Junction temperature Storage temperature RATINGS AND MAXIMUM .080(2.04) .070(1.78) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) .008(0.20) Electrical Characteristics @ 25к Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC .055(1.40) .035(0.89) FM130-MH SYMBOL FM120-MH Min Typ Max UnitFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH --- 12 --- 13 V 0.5 14 15 16 18 10 115 120 --40 50 60 80 100 150 200 VRRM --- 20 3.0 30 V .004(0.10)MAX. --0.1 0.3 V 14 21 28 35 42 56 70 105 140 V RMS ----0.88 mA 20 30 40 50 60 80 100 150 200 A ---VDC --0.5 30 IO ----1.0 .020(0.50) 7.0 10 K¡ 13 .012(0.30) 0.8 1.0 1.2 30 IFSM --250 --MHz Dimensions in inches and (millimeters) 40 RΘJA 120 CJ -55 to +125 -55 to +150 TJ - 65 to +175 Suggested Solder Pad LayoutFM1100-MH FM1150-MH FM1200-MH FM180-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH MARKING:VF24 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .003(0.08) TSTG @T A=125℃ IR 0.50 0.70 0.85 .031 .800 0.9 0.92 0.5 .035 .900 10 .079 2.000 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.031(0.8) Typ. Min Typ Max Unit Dimensions in inches and (millimeters) --50 --V -10 --40 V --50 100 mA --200 --mW ć --150 ---55 --150 ć ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Symbol Parameter VI(off) Input voltage (VCC=5V, IO=100A) Marking Code VI(on) (VOReverse =0.3V, IOVoltage =10mA) Maximum Recurrent Peak VO(on) Output voltage (I= O/II 10mA/0.5mA) Maximum RMS InputVoltage current (VI 5V) II = Maximum DC Blocking Voltage IO(off) Output current (VCC = =50V, VI 0) G DC current gain = ICurrent I O=5V, O 5mA) Maximum Average Forward (V Rectified R1 Input resistance R Resistance ratio8.3 ms single half sine-wave 2/R1Forward Peak Surge Current Transition frequency superimposed on rated load (JEDEC method) fT (VO=10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) 1,1 *1' 287 1 .110(2.80) Symbol VCC VIN IO Pd Tj Tstg 0.071(1.8) 0.056(1.4) .006(0.15)MIN. • 0.012(0.3) Typ. .122(3.10) .106(2.70) .063(1.60) .047(1.20) • • • 0.146(3.7) 0.130(3.3) .083(2.10) • SOD-123H inches mm 2- Thermal Resistance From Junction to Ambient .037 .950 2012-06 2012-0 .037 .950 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers INPUT VOLTAGE VI(ON) 3 1 0.3 VCC=5V Ta=100℃ 25℃ 3 (mA) 10 OFF Characteristics SOD-123H 10 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 IO (V) 30 ON Characteristics better reverse leakage current and thermal resistance. order to • Low profile surface mounted application inVO=0.3V optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. =25℃ a chip, metal silicon junction. • Silicon epitaxialTplanar 100℃ • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) OUTPUT CURRENT 100 0.3 0.1 Mechanical data 0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 • Case : Molded plastic, SOD-123H 0.1 1 10 100 3 30 0.3 , • Terminals :Plated per MIL-STD-750 OUTPUT terminals, CURRENT I solderable (mA) 0.01 0.0 0.031(0.8) Typ. 0.4 O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 0.031(0.8) 2.0 Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) : Any—— IO • Mounting Position • Weight : Approximated 0.011 gram 1 Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V Ta=100℃ 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 25℃ RATINGS 0.1 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 0.03 Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave 0.01 10 30 superimposed on rated load (JEDEC method) OUTPUT CURRENT IO Typical Thermal Resistance (Note 2) (mA) GI 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 40 50 60 80 100 150 200 10 30 3 IFSM 1 0.1 100 RΘJA Operating Temperature Range C Storage Temperature Range O 10 TJ -55 to +125 TSTG 400 VR 30 (mA) 100 -55 to +150 PD - 65 —— Ta to +175 (pF) 0.50 IR 6 300 250 POWER DISSIPATION NOTES: (mW) VF @T A=125℃ CO OUTPUT CAPACITANCE 10 IO FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 350 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 f=1MHz Ta=25℃ CHARACTERISTICS 1 CJ —— 0.3 1.0 3 30 OUTPUT CURRENT Typical Junction Capacitance (Note 1) Maximum Forward Voltage at 1.0A DC 8 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 PD 13 30 IO Maximum Average Forward Rectified Current 1 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH 30 Marking Code 3 DC CURRENT GAIN OUTPUT VOLTAGE VO(ON) (V) Ratings at 25℃ ambient temperature unless otherwise specified. 0.3 Single phase half wave, 60Hz, resistive of inductive load. Ta=100℃ For capacitive load, derate current by 20% 25℃ 2- Thermal Resistance From Junction to Ambient 4 2 0.70 0.9 0.85 0.5 0.92 10 DTC114ECA 200 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTC114ECA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.