DTC114ECA(SOT 23)Rev.B

WILLAS
FM120-M+
DTC114ECATHRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT-23
better reverse leakage current and thermal resistance.
Features
• Low profile surface mounted application in order to
Pb-Free
package
is space.
available
optimize
board
power
high efficiency.
RoHS• Low
product
forloss,
packing
code suffix ”G”
• High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
• High surge capability.
Epoxy
meets ULfor94overvoltage
V-0 flammability
rating
protection.
• Guardring
Moisure
Sensitivity
Level
1
• Ultra high-speed switching.
Built-in
bias resistors
enable the configuration of an inverter circuit
epitaxial planar chip, metal silicon junction.
• Silicon
without
connecting
external
input resistors
standards of
• Lead-free parts meet environmental
The bias
resistors
consist
of
thin-film resistors with complete
MIL-STD-19500 /228
isolation
to allow
negative
biasing
of the
product
for packing
code suffix
"G"input. They also have the
• RoHS
advantage
of almost
completely
eliminating
parasitic effects.
Halogen
free product
for packing
code suffix "H"
Only the
on/off conditions
need to be set for operation, making
Mechanical
data
device design easy
• Epoxy : UL94-V0 rated flame retardant
•
• Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Absolute• maximum
ratings @ 25к
•
•
•
Method 2026
Parameter
Polarity
: Indicated by cathode band
Supply voltage
Input voltage
Mounting Position : Any
Output current
Weight
: Approximated 0.011 gram
Power dissipation
Junction temperature
Storage
temperature RATINGS AND
MAXIMUM
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.008(0.20)
Electrical
Characteristics @ 25к
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.055(1.40)
.035(0.89)
FM130-MH
SYMBOL
FM120-MH
Min
Typ
Max
UnitFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
--- 12 --- 13 V
0.5
14
15
16
18
10
115
120
--40
50
60
80
100
150
200
VRRM --- 20 3.0 30 V
.004(0.10)MAX.
--0.1
0.3
V
14
21
28
35
42
56
70
105
140
V
RMS
----0.88
mA
20
30
40
50
60
80
100
150
200
­A
---VDC --0.5
30 IO ----1.0
.020(0.50)
7.0
10
K¡
13
.012(0.30)
0.8
1.0
1.2
30
IFSM
--250
--MHz
Dimensions in inches
and (millimeters)
40
RΘJA
120
CJ
-55 to +125
-55 to +150
TJ
- 65 to +175
Suggested Solder
Pad
LayoutFM1100-MH FM1150-MH FM1200-MH
FM180-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
MARKING:VF24
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.003(0.08)
TSTG
@T A=125℃
IR
0.50
0.70
0.85
.031
.800
0.9
0.92
0.5
.035
.900
10
.079
2.000
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.031(0.8) Typ.
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
--50
--V
-10
--40
V
--50
100
mA
--200
--mW
ć
--150
---55
--150
ć
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Symbol
Parameter
VI(off)
Input voltage (VCC=5V, IO=100­A)
Marking
Code
VI(on)
(VOReverse
=0.3V, IOVoltage
=10mA)
Maximum
Recurrent Peak
VO(on)
Output voltage (I=
O/II 10mA/0.5mA)
Maximum
RMS
InputVoltage
current (VI 5V)
II =
Maximum
DC
Blocking
Voltage
IO(off)
Output
current
(VCC
=
=50V, VI 0)
G
DC
current
gain
=
ICurrent
I
O=5V,
O 5mA)
Maximum Average Forward (V
Rectified
R1
Input resistance
R
Resistance
ratio8.3 ms single half sine-wave
2/R1Forward
Peak
Surge Current
Transition
frequency
superimposed
on rated load (JEDEC method)
fT
(VO=10V, IO=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
1,1
*1'
287
1
.110(2.80)
Symbol
VCC
VIN
IO
Pd
Tj
Tstg
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
•
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
•
•
•
0.146(3.7)
0.130(3.3)
.083(2.10)
•
SOD-123H
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
2012-06
2012-0
.037
.950
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114ECA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
• Batch process design, excellent power dissipation offers
INPUT VOLTAGE
VI(ON)
3
1
0.3
VCC=5V
Ta=100℃
25℃
3
(mA)
10
OFF Characteristics
SOD-123H
10
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
IO
(V)
30
ON Characteristics
better reverse leakage current and thermal resistance.
order to
• Low profile surface mounted application inVO=0.3V
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
=25℃
a
chip, metal silicon junction.
• Silicon epitaxialTplanar
100℃
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
OUTPUT CURRENT
100
0.3
0.1
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0.1 • Case : Molded plastic, SOD-123H
0.1
1
10
100
3
30
0.3
,
• Terminals :Plated
per MIL-STD-750
OUTPUT terminals,
CURRENT I solderable
(mA)
0.01
0.0
0.031(0.8)
Typ.
0.4
O
0.8
1.2
INPUT VOLTAGE
VI(OFF)
1.6
0.031(0.8)
2.0 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON)
: Any—— IO
• Mounting Position
• Weight : Approximated 0.011 gram
1
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
Ta=100℃
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
25℃
RATINGS
0.1
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
0.03
Maximum DC Blocking Voltage
Peak
Forward Surge Current 8.3 ms single half sine-wave
0.01
10
30
superimposed on rated load (JEDEC method)
OUTPUT CURRENT
IO
Typical Thermal Resistance (Note 2)
(mA)
GI
15
50
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
40
50
60
80
100
150
200
10
30
3
IFSM
1
0.1
100
RΘJA
Operating Temperature Range
C
Storage
Temperature Range O
10
TJ
-55 to +125
TSTG
400
VR
30
(mA)
100
-55 to +150
PD - 65
——
Ta
to +175
(pF)
0.50
IR
6
300
250
POWER DISSIPATION
NOTES:
(mW)
VF
@T A=125℃
CO
OUTPUT CAPACITANCE
10
IO
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
350
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
40
120
f=1MHz
Ta=25℃
CHARACTERISTICS
1
CJ
——
0.3
1.0
3 30
OUTPUT CURRENT
Typical Junction Capacitance (Note 1)
Maximum
Forward Voltage at 1.0A DC
8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
PD
13
30
IO
Maximum Average Forward Rectified Current
1
100
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
30
Marking Code
3
DC CURRENT GAIN
OUTPUT VOLTAGE
VO(ON)
(V)
Ratings
at 25℃ ambient temperature unless otherwise specified.
0.3
Single phase half wave, 60Hz, resistive
of inductive load.
Ta=100℃
For capacitive load, derate current by 20%
25℃
2- Thermal
Resistance From Junction to Ambient
4
2
0.70
0.9
0.85
0.5
0.92
10
DTC114ECA
200
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114ECA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC114ECA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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