BAS70W 0x(SOT 323)

WILLAS
FM120-M+
BAS70W-0x
THRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage
current and thermal resistance.
SCHOKKTY
BARRIER
DIODE
• Low profile surface mounted application in order to
optimize board space.
FEATURES
• Low power loss, high efficiency.
z
Low Turn-on voltage
• High current capability, low forward voltage drop.
z
Fast
switching
surge capability.
• High
z
Also
available
in lead free
version
for overvoltage
protection.
• Guardring
z
Pb-Free
package switching.
is available
• Ultra high-speed
epitaxial
chip,
metal
silicon
• Silicon
RoHS
product
for planar
packing
code
suffix
”G”junction.
• Lead-free parts meet environmental standards of
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen
free product for packing code suffix “H”
MIL-STD-19500 /228
Moisture
Sensitivity
Level
1
for packing
code suffix
"G"
• RoHS product
z
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
BAS70W
Marking:Position
K73
BAS70W-04 Marking: K74
: Any
• Mounting
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
MAXIMUM@T
RATINGS
MAXIMUM RATINGS
A=25℃ AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Symbol
Parameter
For capacitive load, derate current by 20%
VR
DC RATINGS
Voltage
Units
70
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Forward Continuous Current
Marking
IF Code
Value
Maximum Recurrent Peak Reverse Voltage
PD
Power dissipation
T
Operating Temperature
12
20
VRRM
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
35
J
Maximum
DC Blocking Voltage
VDC
20
30
40
50
Temperature
Tstg Average Storage
Maximum
Forward Rectified
Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
70
16
60
15
50
IO
IFSM
200
42
56
70
105
140
60
80
100
150
200
Volts
-55~125
-55-150
1.0
TSymbol
J
-55
to +125conditions
Test
V(BR) R
CHARACTERISTICS
IR
@T A=125℃
VF
Diode
capacitance
IF=1mA
IF=15mA
=
=
VR 0V,f 1MHz
C
D
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
2012-06
2012-11
℃
℃
Amps
MIN
Amps
℃/W
PF
-55 to +150
MAX
UNIT
℃
℃
70
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
NOTES:
40
120
- 65 to +175
IR= 10µA
Maximum
Forward
Voltage atleakage
1.0A DC current=
V F IR
VR 50V0.50
Reverse
voltage
Rated
DC Blockingvoltage
Voltage
Forward
TSTG
Reverse breakdown voltage
Volts
30
CJ
Storage Temperature Range
120
200
Volts
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
RΘJA
Parameter
Operating Temperature
Range
mW
115
150
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
mA
10
100
18
80
trr
IF=IR=10mA,Irr=0.1xIR,
RL=100Ω
0.70
0.5
10
0.85
100
0.9
nA
0.92
Volts
410
1000
mV
2
pF
5
nS
mAmp
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS70W-0x
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Typical Characteristics
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS70W-0x
THRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.070(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.010(0.25)
18
10
.003(0.08)
80
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
.047(1.20)
VRRM
12
20
13
30
14
40
15
50
16
60
115
150
120
200
Volts
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Maximum RMS Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
.016(0.40)
.008(0.20)
@T A=125℃
0.50
.043(1.10)
.032(0.80)
VF
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.DCORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
BAS70W-0x
THRU
FM1200-M+
Pb Free Product
SOD-123+
PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape & Reel Packing switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
T
J
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.