BAW56W(SOT 323)

WILLAS
SOT-323 Plastic-Encapsulate Diodes
FM120-M+
BAW56W
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
SWITCHING
DIODE
Features
• Batch process design, excellent power dissipation offers
FEATURES
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
z• Low
Fast
Switching
Speedapplication in order to
profile
surface mounted
optimize
board space.
For General
Purpose Switching Applications
• Low power loss, high efficiency.
z• High
High
Conductance
current
capability, low forward voltage drop.
z• High
surge capability.
Pb-Free
package is available
for overvoltage
protection.
• Guardring
RoHS product
for packing
code suffix ”G”
• Ultra high-speed switching.
Halogen
free product for packing code suffix “H”
epitaxial planar chip, metal silicon junction.
• Silicon
z
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
Moisture
Sensitivity
Level 1 standards of
z• Lead-free
parts
meet environmental
3
MIL-STD-19500 /228
2
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MARKING:
KJC
Mechanical data
Maximum Ratings @Ta=25℃
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case : Molded
Parameter
Symbol
,
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
VRM
Non-Repetitive Peak Reverse Voltage
0.040(1.0)
0.024(0.6)
Unit
0.031(0.8) Typ.
100
V
ina
ry
Limit
0.031(0.8) Typ.
Method 2026
Peak Repetitive Peak Reverse Voltage
VRRM
• Polarity : Indicated by cathode band
Working
Peak Reverse
Voltage
Position : Any
• Mounting
DC Blocking
• Weight : Voltage
Approximated 0.011 gram
Dimensions in inches and (millimeters)
VRWM
75
V
VR
RMS Reverse Voltage
VR(RMS)
53
V
300
mA
150
mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
Forward Continuous Current
IFM
Ratings at 25℃ ambient temperature unless otherwise specified.
Average
Current
Single
phaseRectified
half wave,Output
60Hz, resistive
of inductive load. IO
For
capacitive
load,Surge
derate Current
current [email protected]=1.0μs
20%
Peak
Forward
Marking Code
@t =1.0s
Power Dissipation
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Thermal Resistance Junction to Ambient
Junction
Maximum
DC Temperature
Blocking Voltage
Operating/Storage
Temperature
Maximum
Average Forward
Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Electrical Ratings @Ta=25℃
superimposed on rated load (JEDEC method)
Reverse breakdown voltage
TJ
Storage Temperature Range
Forward voltage
CHARACTERISTICS
15
50
16
60
18
80
10
mW
100
115
150
120
200
Volts
14
21
28
35
42
56
70
105
140
Volts
Tj 20
30
40 150 50
60
80
100℃
150
200
Volts
Min
625
-55~+150
Typ
Max
75-55 to +125
℃/W
℃
1.0
30
Amps
Conditions
Unit 40
V 120
0.715
V - 65 to +175
IF=1mA
VF2
0.855
V
IF=10mA
V
V
I =50mA
V
0.5
IF=150mA
IR1
2.5
μA
10
VR=75V
IR2
25
nA
VR=20V
CT
2
pF
VR=0V,f=1MHz
trr
4
ns
@T A=125℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-06
2012-1
IR
0.50
1.0
1.25
Reverse recovery time
℃
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF4
Capacitance between terminals
PF
I =2.5μA
Maximum Average Reverse Current at @T A=25℃
2- Thermal Resistance From Junction to Ambient
℃/W
-55Rto +150
VFF3
Reverse current
Amps
VF1
TSTG
NOTES:
14 200
40
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
IO
IFSM
13
30
TSTG
V (BR)
Operating Temperature Range
A
20
RθJA
VDC
CJ
Typical Junction Capacitance (Note 1)
Pd 12
RΘJA
Symbol
Typical Thermal Resistance
(Note 2)
Parameter
2.0
SYMBOL FM120-MH FM130-MH FM140-MH
1.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Pr
el
RATINGS
IFSM
0.70
F
0.85
0.9
0.92
Volts
mAmps
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323 Plastic-Encapsulate Diodes
FM120-M+
BAW56W
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ina
Method 2026
0.040(1.0)
0.024(0.6)
ry
.054(1.35)
.045(1.15)
Mechanical data
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant
.070(1.80)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.056(1.40)
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
.010(0.25)
18
10
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
.047(1.20)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
80
100
115
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.008(0.20)
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.DCORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAW56W
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
capability. (1)G(2)‐WS • High surgeBAW56W‐T
Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Packing code, Tape&Reel Packing
Ultra high-speed switching.
•Note: (1)
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
***Disclaimer***
im
Ratings at 25℃ ambient temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive
load, derate current by 20%
Pr
el
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
contained are intended to provide a product description only. "Typical" parameters Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Amps
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposedWILLAS does not assume any liability arising out of the application or on rated load (JEDEC method)
℃/W
40
Typical Thermal
Resistance (Note 2)
RΘJA
use of any product or circuit. PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
65
to
+175
Storage Temperature
Range
TSTG
℃
WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
1- Measured at
1 MHZ and applied reverse voltage of 4.0 VDC.
such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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