BAT54x(SOT 23)

WILLAS
FM120-M+
BAT54x THRU
FM1200-M
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
process design, excellent power dissipation offers
• Batch
SCHOTTKY
BARRIER
DIODE
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
optimize board
z Extremely
Fast space.
Switching Speed
• Low power loss, high efficiency.
package
is low
available
z Pb-Free
capability,
forward voltage drop.
• High current
High
surge
capability.
•
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
free product
for packing code suffix “H”
switching.
• Ultra high-speed
planar chip,
metal
• Silicon epitaxial
z Moisture
Sensitivity
Level
1 silicon junction.
• Lead-free parts meet environmental standards of
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
:Plated terminals, solderable per MIL-STD-750
BAT54 MARKING:• Terminals
KL1 L4P/JV3
/
0.031(0.8) Typ.
0.031(0.8) Typ.
BAT54A MARKING: KL2/L42/B6 BAT54C MARKING: KL3/ L43/5C BAT54S MARKING: KL4/L44/LD3
Method 2026
• Polarity : Indicated by cathode band
Mounting
Position : Any
•
Maximum Ratings
@Ta=25℃
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Parameter
Symbol
Peak Repetitive Peak Reverse Voltage
VRRM
Limit
Unit
30
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
VRWM load.
Working
Peak
Reverse
Voltage
Single
phase
half wave,
60Hz, resistive of inductive
For capacitive
load, derate current by 20%
VR
DC Blocking
Voltage
RATINGS
Forward Continuous Current
IFM
Power
Dissipation
Maximum
Recurrent Peak Reverse Voltage
PD VRRM
12
20
13
30
Maximum
RMS Voltage
Thermal
Resistance
Junction to Ambient
RθJA VRMS
14
21
20
30
Marking Code
Maximum DC Blocking Voltage
Operating temperature
Maximum Average Forward Rectified Current
Tj
SYMBOL FM120-MH FM130-MH FM140-MH
200 FM150-MH FM160-MH FM180-MH FM1100-MH
mA FM1150-MH FM1200-MH
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Electrical
Characteristics @Ta=25℃
Typical Junction Capacitance (Note 1)
Parameter
CJ
TJ
V (BR)TSTG
Storage
Temperaturevoltage
Range
Reverse
breakdown
CHARACTERISTICS
16
60
18
80
10
mW
100
115
150
120
200
35
42
56
70
℃/W
105
140
50
60
80
100
150
-55~+125
VF1 SYMBOL
Typ
-55 to +125
Max
30
Unit
40
120
Conditions
-55 to +150
- 65 to =
+175 IR 100μA
V
0.24
V
IF=0.1mA
FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
0.40
V
0.50
V
IF=30mA
VF5
1
V
IF=100mA
Reverse
current
IR
2
μA
VR= 25V
Diode capacitance
CD
10
pF
VR=1V,f=1MHz
Reverse recovery time
trr
5
ns
Forward
Ratedvoltage
DC Blocking Voltage
VF3
@T A=125℃
NOTES:
VF4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
IR
V
VF2
Maximum Average Reverse Current at @T A=25℃
200
℃
0.50
0.32
Maximum Forward Voltage at 1.0A DC
VF
Min
℃
1.0
30
IFSM
Symbol
Operating Temperature Range
15
50
-55~+150
RΘJA
Typical Thermal Resistance (Note 2)
28500
40
IO
TSTG Storage
Temperature
14
40200
0.70
0.85
0.5
10
IF=1mA
0.9
0.92
IF=10mA
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54x THRU
FM1200-M+
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
o
C
(mA)
=1
00
MIL-STD-19500 /228
o
C
a
T
10
T=
a 2
5
Halogen free product for packing code suffix "H"
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
•
0.01 Mounting Position : Any
0
200
400
600
• Weight : Approximated 0.011 gram
FORWARD VOLTAGE
VF
0.012(0.3) Typ.
Characteristics
0.071(1.8)
0.056(1.4)
o
Ta=100 C
10
1
• Epoxy : UL94-V0 rated flame retardant
1
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0.146(3.7)
0.130(3.3)
Reverse
100
REVERSE CURRENT IR
• RoHS product for packing code suffix "G"
IF
FORWARD CURRENT
Typical Characteristics
(uA)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
capability.Characteristics
• High surge
Forward
1000
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
100
• Lead-free parts meet environmental standards of
0.040(1.0)
0.024(0.6)
o
Ta=25 C
0.031(0.8) Typ.
0.031(0.8) Typ.
0.1
Dimensions in inches and (millimeters)
800
0.01
1000
0
5
(mV)
10
15
20
REVERSE VOLTAGE
25
VR
30
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
SYMBOL FM120-MH FM130-MH
FM1200-MH
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Maximum Recurrent Peak Reverse Voltage
f=1MHz
16
IO
12 Average Forward Rectified Current
Maximum
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
8
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
4 Temperature Range
Operating
Storage Temperature Range
0
0
5
TSTG
CHARACTERISTICS
10
15
20
Maximum Forward Voltage at 1.0A DC
REVERSE VOLTAGE VR (V)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IFSM
13
30250
14
40
15
50
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30200
40
50
60
80
100
150
200
(mW)
Ta=25℃
PD
RATINGS
Marking Code
Power Derating Curve
Capacitance Characteristics
20
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
30
150
100
40
120
-55 to +125
50
-55 to +150
- 65 to +175
0 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM120-MH FM130-MH
SYMBOL
25
30
0
25
50
75
100
125
150
VF
@T A=125℃
IR
0.50
0.70
0.85
AMBIENT TEMPERATURE Ta (℃)
0.5
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54x THRU
FM1200-M
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produ
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-23
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.122(3.10)
.106(2.70)
• Epoxy : UL94-V0 rated flame retardant
.063(1.60)
.047(1.20)
Halogen free product for packing code suffix "H"
Mechanical data
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.080(2.04)
Maximum Recurrent Peak Reverse Voltage
.070(1.78)
Maximum RMS Voltage
Maximum DC Blocking Voltage
Marking Code
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
12
20
13
30
14
40
15
50
16
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
IO
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
.004(0.10)MAX.
Storage Temperature Range
10
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
18
80
100
.003(0.08)
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
.020(0.50)
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
.012(0.30)
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
2- Thermal Resistance From Junction to Ambient
0.50
.055(1.40)
.035(0.89)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.5
0.92
10
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.D
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Ordering
loss, high efficiency.
• Low powerInformation:
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
Device PN Packing • High surge capability.
(1) (2)
Part Number ‐T
‐WS Tape&Reel: 3 Kpcs/Reel for overvoltageGprotection.
• Guardring
Ultra high-speed switching.
•
Note: (1) Packing code, Tape & Reel Packing • Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratingsspecification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
V
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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