WILLAS FM120-M+ BAT54x THRU FM1200-M SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features process design, excellent power dissipation offers • Batch SCHOTTKY BARRIER DIODE better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to optimize board z Extremely Fast space. Switching Speed • Low power loss, high efficiency. package is low available z Pb-Free capability, forward voltage drop. • High current High surge capability. • RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free product for packing code suffix “H” switching. • Ultra high-speed planar chip, metal • Silicon epitaxial z Moisture Sensitivity Level 1 silicon junction. • Lead-free parts meet environmental standards of SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , :Plated terminals, solderable per MIL-STD-750 BAT54 MARKING:• Terminals KL1 L4P/JV3 / 0.031(0.8) Typ. 0.031(0.8) Typ. BAT54A MARKING: KL2/L42/B6 BAT54C MARKING: KL3/ L43/5C BAT54S MARKING: KL4/L44/LD3 Method 2026 • Polarity : Indicated by cathode band Mounting Position : Any • Maximum Ratings @Ta=25℃ • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Limit Unit 30 V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. VRWM load. Working Peak Reverse Voltage Single phase half wave, 60Hz, resistive of inductive For capacitive load, derate current by 20% VR DC Blocking Voltage RATINGS Forward Continuous Current IFM Power Dissipation Maximum Recurrent Peak Reverse Voltage PD VRRM 12 20 13 30 Maximum RMS Voltage Thermal Resistance Junction to Ambient RθJA VRMS 14 21 20 30 Marking Code Maximum DC Blocking Voltage Operating temperature Maximum Average Forward Rectified Current Tj SYMBOL FM120-MH FM130-MH FM140-MH 200 FM150-MH FM160-MH FM180-MH FM1100-MH mA FM1150-MH FM1200-MH VDC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Characteristics @Ta=25℃ Typical Junction Capacitance (Note 1) Parameter CJ TJ V (BR)TSTG Storage Temperaturevoltage Range Reverse breakdown CHARACTERISTICS 16 60 18 80 10 mW 100 115 150 120 200 35 42 56 70 ℃/W 105 140 50 60 80 100 150 -55~+125 VF1 SYMBOL Typ -55 to +125 Max 30 Unit 40 120 Conditions -55 to +150 - 65 to = +175 IR 100μA V 0.24 V IF=0.1mA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.40 V 0.50 V IF=30mA VF5 1 V IF=100mA Reverse current IR 2 μA VR= 25V Diode capacitance CD 10 pF VR=1V,f=1MHz Reverse recovery time trr 5 ns Forward Ratedvoltage DC Blocking Voltage VF3 @T A=125℃ NOTES: VF4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 IR V VF2 Maximum Average Reverse Current at @T A=25℃ 200 ℃ 0.50 0.32 Maximum Forward Voltage at 1.0A DC VF Min ℃ 1.0 30 IFSM Symbol Operating Temperature Range 15 50 -55~+150 RΘJA Typical Thermal Resistance (Note 2) 28500 40 IO TSTG Storage Temperature 14 40200 0.70 0.85 0.5 10 IF=1mA 0.9 0.92 IF=10mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to o C (mA) =1 00 MIL-STD-19500 /228 o C a T 10 T= a 2 5 Halogen free product for packing code suffix "H" Mechanical data Method 2026 • Polarity : Indicated by cathode band • 0.01 Mounting Position : Any 0 200 400 600 • Weight : Approximated 0.011 gram FORWARD VOLTAGE VF 0.012(0.3) Typ. Characteristics 0.071(1.8) 0.056(1.4) o Ta=100 C 10 1 • Epoxy : UL94-V0 rated flame retardant 1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.146(3.7) 0.130(3.3) Reverse 100 REVERSE CURRENT IR • RoHS product for packing code suffix "G" IF FORWARD CURRENT Typical Characteristics (uA) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. capability.Characteristics • High surge Forward 1000 • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 100 • Lead-free parts meet environmental standards of 0.040(1.0) 0.024(0.6) o Ta=25 C 0.031(0.8) Typ. 0.031(0.8) Typ. 0.1 Dimensions in inches and (millimeters) 800 0.01 1000 0 5 (mV) 10 15 20 REVERSE VOLTAGE 25 VR 30 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH FM130-MH FM1200-MH VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage f=1MHz 16 IO 12 Average Forward Rectified Current Maximum Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 8 RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ 4 Temperature Range Operating Storage Temperature Range 0 0 5 TSTG CHARACTERISTICS 10 15 20 Maximum Forward Voltage at 1.0A DC REVERSE VOLTAGE VR (V) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IFSM 13 30250 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30200 40 50 60 80 100 150 200 (mW) Ta=25℃ PD RATINGS Marking Code Power Derating Curve Capacitance Characteristics 20 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 150 100 40 120 -55 to +125 50 -55 to +150 - 65 to +175 0 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH SYMBOL 25 30 0 25 50 75 100 125 150 VF @T A=125℃ IR 0.50 0.70 0.85 AMBIENT TEMPERATURE Ta (℃) 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54x THRU FM1200-M SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .122(3.10) .106(2.70) • Epoxy : UL94-V0 rated flame retardant .063(1.60) .047(1.20) Halogen free product for packing code suffix "H" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .083(2.10) .110(2.80) Dimensions in inches and (millimeters) .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M .080(2.04) Maximum Recurrent Peak Reverse Voltage .070(1.78) Maximum RMS Voltage Maximum DC Blocking Voltage Marking Code Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range .004(0.10)MAX. Storage Temperature Range 10 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) 18 80 100 .003(0.08) 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .012(0.30) NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 2- Thermal Resistance From Junction to Ambient 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.5 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.D WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. Ordering loss, high efficiency. • Low powerInformation: 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (1) (2) Part Number ‐T ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltageGprotection. • Guardring Ultra high-speed switching. • Note: (1) Packing code, Tape & Reel Packing • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratingsspecification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures . 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.