WILLAS General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • Low power loss, high efficiency. FEATURE current capability, low forward voltage drop. • High Circuit Design. ƽSimplifies surge capability. • High overvoltage protection. • Guardring ƽ RoHSfor product for packing code suffix "G" high-speed • Ultra Halogen freeswitching. product for packing code suffix "H" • Silicon epitaxial planar chip, metal silicon junction. INFORMATION Lead-free parts meet environmental standards of • ORDERING MIL-STD-19500 /228 Marking Device 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Shipping • RoHS product for packing code suffix "G" MMBT3906TT1 2A code suffix 3000/Tape Halogen free product for packing "H" & Reel SC-89 Mechanical data • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS plastic, SOD-123H • Case : MoldedRating Symbol , • Terminals :Plated Collector–Emitterterminals, Voltage solderable per MIL-STD-750 V CEO Method 2026 Collector–Base Voltage Polarity : Indicated by cathode band Emitter–Base Voltage • CollectorPosition Current — Continuous : Any • Mounting • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) Value Unit 0.031(0.8) Typ. 3 COLLECTOR 0.031(0.8) Typ. V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 200 mAdc Dimensions in inches and (millimeters) 1 BASE 2 EMITTER THERMAL CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL Characteristic SymbolCHARACTERISTICS Max Unit Total ambient Device Dissipation FR– 4 Board(1) PD Ratings at 25℃ temperature unless otherwise specified. °C 60Hz, resistive of inductive load. Single phaseThalf wave, A =25 above 25°C For capacitiveDerate load, derate current by 20% 200 mW 1.6 mW/°C Thermal Resistance R θJA FM130-MH600 °C/W FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM140-MH FM150-MH RATINGS Junction to Ambient SYMBOL FM120-MH P12D mW 13 300 14 15 16 18 10 115 120 FR-4 Board T A = Voltage 25°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak (2), Reverse Volts VRRM Derate above 25°C 2.4 mW/°C Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Junction to Ambient VDC R20 °C/W θJA Volts Maximum DCThermal BlockingResistance Voltage 30 400 40 50 60 80 100 150 200 Junction and Storage Temperature T J , T stg –55 to +150 °C Amps Maximum Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave DEVICE MARKING 30 IFSM Amps superimposed MMBT3906TT1 on rated load (JEDEC = 2Amethod) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) C J ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ Characteristic Symbol Min Max Unit - 65 to +175 Storage Temperature Range TSTG ℃ Marking CodeTotal Device Dissipation OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) CHARACTERISTICS V Vdc (BR)CEO SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT = –1.0 mAdc, (I CVoltage B = 0) Maximum Forward at 1.0AIDC VF Collector–Base Breakdown Voltage Maximum Average Reverse Current at @T A=25℃ IR (I C = –10 µAdc, I E = 0) @T A=125℃ Rated DC Blocking Voltage Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) NOTES: 1- Measured at 1 MHZ applied reverse voltage of 4.0 VDC. Baseand Cutoff Current (V CE From = –30Junction Vdc, VtoEBAmbient = –3.0 Vdc) 2- Thermal Resistance Collector Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 0.50 V (BR)CBO – 40 0.70 – 40 V (BR)EBO — 0.5 10 0.85 Vdc 0.9 0.92 Volts mAmp — Vdc – 5.0 — — – 50 — – 50 I BL nAdc I CEX nAdc 3. Pulse Width <300 µs; Duty Cycle <2.0%. 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906TT1 General Transistor FM1200-M+ 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. (T A = 25°C unless otherwise noted) (Continued) ELECTRICAL CHARACTERISTICS application in order to • Low profile surface mounted Characteristic SOD-123H Symbol optimize board space. (3) LowCHARACTERISTICS power loss, high efficiency. • ON DC Current Gain low forward voltage drop. capability, • High current (I = –0.1 mAdc, C capability. V CE = –1.0 Vdc) • High surge (I C = for –1.0 mAdc, V CE =protection. –1.0 Vdc) overvoltage • Guardring switching. • Ultra high-speed (I C = –10 mAdc, V CE = –1.0 Vdc) planar metal silicon junction. • Silicon(Iepitaxial V chip, Vdc) C = –50 mAdc, CE = –1.0 • Lead-free (I C =parts –100 meet mAdc,environmental V CE = –1.0 Vdc)standards of Min Max hFE MIL-STD-19500 /228 Collector–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc) Halogen free product for packing code suffix "H" (I C = –50 mAdc, I B = –5.0 mAdc) Mechanical data Base–Emitter Saturation Voltage rated flame retardant • Epoxy(I: UL94-V0 C = –10 mAdc, I B = –1.0 mAdc) plastic, SOD-123H • Case :(IMolded C = –50 mAdc, I B = –5.0 mAdc) Unit 0.146(3.7) 0.130(3.3) –– 0.012(0.3) Typ. 60 80 100 60 30 –– –– 300 –– –– –– –– – 0.25 – 0.4 – 0.65 –– – 0.85 – 0.95 0.071(1.8) 0.056(1.4) VCE(sat) • RoHS product for packing code suffix "G" V • Terminals :Plated terminals, solderable per MIL-STD-750 Vdc Vdc 0.031(0.8) Typ. , 0.040(1.0) 0.024(0.6) BE(sat) 0.031(0.8) Typ. Method CHARACTERISTICS 2026 SMALL–SIGNAL • Polarity : Indicated — byBandwidth cathode band Current–Gain Product (I = –10 mAdc, V = –20 Vdc, f = 100 MHz) C CE • Mounting Position : Any Output Capacitance • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MHz fT 250 pF (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) –– Input Capacitance C ibo MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) –– Ratings at 25℃ ambient temperature unless otherwise specified. Input Impedance h ie Single phase half wave, 60Hz, resistive of inductive load. (V = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 2.0 For capacitive load,CEderate current by 20% Voltage Feedback Ratio h re FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH (V CE=RATINGS –10 Vdc, I C = –1.0 mAdc, f = SYMBOL 1.0 kHz) FM120-MH 0.1 Marking Code 12 13 14 15 h fe 16 18 Small–Signal Current Gain 20 30 40 50 60 Maximum Recurrent Peak Reverse Voltage V RRM (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 100 80 14 21 28 35 * h oe 42 56 Maximum RMS Voltage VRMS Output Admittance Maximum DC Blocking VDC (V CE=Voltage –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 20 30 40 Noise Figure Maximum Average Forward Rectified Current 50 60 NF IO (V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM SWITCHING CHARACTERISTICS Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1)(V CC = – 3.0 Vdc, V C Delay Time BEJ= 0.5 Vdc, Operating Temperature Rise TimeRange Storage Temperature Range Storage Time IC TJ–1.0 mAdc) = –10 mAdc, I B1 = TSTG (V CC = –3.0 Vdc, I C = –10 mAdc, t d -55 to +125 td ts — — — 3.0 80 40 120 4.5 pF 10 kΩ 12 X 10 –4 FM1100-MH FM1150-MH FM1200-MH UNI 10 10 100 400 70 60100 — 115 150 105 µmhos 150 120 200 Volts 140 Volts 200 Volts dB 1.0 –– 30 superimposed on rated load (JEDEC method) –– C obo 4.0 Amp Amp 35 35 - 65 to +175 225 ℃/W -55 to +150 PF ns ns ℃ ℃ t f FM140-MH FM150-MH — FM160-MH FM180-MH 75 Fall Time I B1 = I B2 = –1.0 mAdc) FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL FM120-MH FM130-MH Volts 0.9 0.92 VF 0.50 0.70 0.85 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage Maximum Forward Voltage at 1.0A DC NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906TT1 General Transistor FM1200-M+ 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in 3 Vorder to + 9.1 V optimize board space. Low power loss, high efficiency. 275 High current capability, low forward voltage drop. <1 ns + 0.5 V 10 k High surge capability. • • • 0 0 for overvoltage protection. • Guardring • Ultra high-speed switching. C S < 4.0 pF* – 10.6 Vepitaxial planar300ns chip, metal silicon junction. • Silicon 10 < t 1 < 500 µs environmental standards of • Lead-free parts DUTYmeet CYCLE = 2% DUTY CYCLE = 2% 3V <1ns 0.146(3.7) 0.130(3.3) 275 0.012(0.3) Typ. 10 k 1N916 t1 C < 4.0 pF* 0.071(1.8) S 0.056(1.4) 10.9 V MIL-STD-19500 /228 RoHS product for packing code suffix "G" *Total shunt capacitance of test jig and connectors Halogen free product for packing code suffix "H" • Figure 1. Delay and Rise Time Mechanical data Figure 2. Storage and Fall Time Test Circuit rated flame retardant • Epoxy : UL94-V0Equivalent Equivalent Test Circuit 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 TYPICAL TRANSIENT CHARACTERISTICS Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 10.0 Dimensions in inches and (millimeters) T J = 25°C T J = 125°C 5000 V CC = 40 V 3000 7.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I C / I B = 10 2000 Ratings 5.0 at 25℃ ambient temperature C obo unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate currentCby 20% Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Q, CHARGE (pC) CAPACITANCE (pF) Maximum DC Blocking Voltage VDC 20 ibo 3.0 RATINGS 1000 700 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 2.0 1.0 Maximum Average Forward Rectified Current 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IO REVERSE BIAS (VOLTS) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 13 30 300 200 14 40 15 Q T 50 16 60 18 80 21 100 28 35 42 30 70 40 50 60 50 20 30 40 1.0 Range Storage Temperature Range CHARACTERISTICS TIME (ns) Maximum 30 Average NOTES: t d@V of =0V 1- Measured 7at 1 MHZ and applied reverse voltage OB 4.0 VDC. 2- Thermal Resistance From to Ambient 1.0 2.0 3.0Junction 5.0 7.0 10 20 2012-06 2014-01 30 15 V IR @T A=125℃ 10 5 140 Volt 80 100 150 200 Volt 20 30 50 70 100 Amp 200 Amp 300 ℃/W PF V CC = 40 V -55 to +150 I B1 = I B2 ℃ - 65 to +175 I C /I B = 20 100 ℃ 70 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI t r @V CC=3.0V VF Reverse Current at @T A=25℃ 20 Rated DC Blocking Voltage t r , FALL TIME (ns) 50 Volt 105 40 120 500 -55 to +125 200 100 70 1.0 5.0 7.0 10 120 200 I C , COLLECTOR CURRENT (mA) 30 TSTG Maximum Forward Voltage at 1.0A DC CIJC /I B = 10 TJ Typical Junction Capacitance (Note 1) 300 Operating200 Temperature RΘJA Typical Thermal Resistance (Note 2) 500 2.0 3.0 115 150 56 10 100 QA 70 Figure 4. Charge Data Figure 3. Capacitance superimposed on rated load (JEDEC method) 0.031(0.8) Typ. 40 V 2.0 V 50 70 100 50 0.50 0.70 0.9 0.85 30 0.5 20 I C /I B = 10 10 0.92 Volt mAm 10 7 200 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Fall Time 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906TT1 General Transistor FM1200-M+ 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS • Batch process design, excellent power dissipation offers NOISE FIGURE VARIATIONS better reverse leakage current and thermal resistance. SOD-123H in order to • Low profile surface mounted application (V CE = – 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) optimize board space. 14 C MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) f = 1.0 kHz product for packing code suffix "G" • RoHS 4 Halogen free product for packing code suffix "H" SOURCE RESISTANCE= 500Ω Mechanical data 2 I C = 100 µA • Epoxy : UL94-V0 rated flame retardant 0 : Molded plastic, SOD-123H • Case 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. I C = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) Low power loss, high efficiency. • 12 SOURCEcapability, RESISTANCE= low200Ω forward voltage drop. • High current I = 1.0 mA High surge capability. • 10 C protection. • Guardring for overvoltage SOURCE RESISTANCE= 200 Ω high-speed Iswitching. • Ultra 8 = 0.5 mA C metal silicon junction. • Silicon epitaxial planar chip,SOURCE RESISTANCE =1.0kΩ parts meet environmental standards of • Lead-free 6 I = 50 µA I C = 0.5 mA 10 0.071(1.8) 0.056(1.4) 8 6 4 I C = 50 µA 2 I C = 100 µA 0.040(1.0) 0.024(0.6) 0 0.031(0.8) Typ. 0.1 0.2 0.4 f, FREQUENCY (kHz) Method 2026 1.0 2.0 4.0 10 20 0.031(0.8) Typ. 40 100 R g, SOURCE RESISTANCE (kΩ) Figure 7. Noiseband Figure • Polarity : Indicated by cathode Figure 8.inNoise Figure Dimensions inches and (millimeters) h PARAMETERS • Mounting Position : Any • Weight : Approximated 0.011 gram (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) 300 RATINGS 70 Maximum RMS Voltage 50 Blocking Voltage Maximum DC VRRM 12 20 VRMS 14 VDC 20 IO Peak Forward0.1 Surge Current 8.3 ms 0.2 0.3 0.5single half 1.0 sine-wave 2.0 3.0 IFSM5.0 superimposed on rated load method)CURRENT (mA) I C , (JEDEC COLLECTOR Typical Thermal ResistanceFigure (Note 2)9. Current Gain RΘJA Maximum Average Forward Rectified Current 30 Typical Junction Capacitance (Note 1) CJ 20 Operating Temperature Range TJ Storage Temperature Range h ie, INPUT IMPEDANCE (kΩ) CHARACTERISTICS 5.0 NOTES: IR @T A=125℃ 0.5 2- Thermal Resistance From Junction to Ambient 0.2 2012-06 2014-01 0.2 0.3 0.5 1.0 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1 0.1 1.0 0.2 0.3 0.5 30 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) 40 Figure 10. Output Admittance 120 -55 to +150 Amp 10 Amp ℃/W -55 to +125 10 1.0 0.1 2 15 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 30 5 14 40 VF Maximum Average Reverse Current at @T A=25℃ 2.0 21 10 PF ℃ - 65 to +175 7.0 ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH5.0 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 20 10 TSTG 10 13 30 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Maximum Recurrent Peak Reverse Voltage 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 100 h oe , OUTPUT ADMITTANCE ( µmhos) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase 200 half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% h fe, DC CURRENT GAIN 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2.0 3.0 5.0 10 0.50 0.70 3.0 0.9 0.85 0.92 0.5 mAm 10 2.0 Volts 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906TT1 General Transistor FM1200-M+ 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers STATIC CHARACTERISTICS better reverse leakage current andTYPICAL thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. 2.0 power loss, high efficiency. • Low T J drop. = +125°C • High current capability, low forward voltage • High surge capability. 1.0 +25°C • Guardring for overvoltage protection. high-speed switching. • Ultra 0.7 • Silicon epitaxial planar chip, metal silicon junction.–55°C 0.5 parts meet environmental standards of • Lead-free h FE , DC CURRENT GAIN (NORMALIZED) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. V CE = 1.0 V 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS 0.3 product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.2 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 : Molded plastic, SOD-123H • Case 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0, • Terminals :Plated terminals, solderable per MIL-STD-750 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 10 20 30 50 0.031(0.8) Typ. 70 100 T J = 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.8 30 mA mA =1.0 mA Ratings at 25℃ Iambient temperature unless otherwise 10 specified. C Single phase half wave, 60Hz, resistive of inductive load. 0.6 For capacitive load, derate current by 20% RATINGS 0.4 200 Dimensions in inches and (millimeters) 100 mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volt Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volt 0.2 0 Maximum Average Forward Rectified Current 0.01 0.02 0.03 0.05 0.07 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating Temperature Range T J = 25°C 1.0 Storage Temperature Range V, VOLTAGE ( VOLTS ) VF IR @T A=125℃ V CE(sat) @ I C /I B =10 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 10 5.0 7.0 Amp 10 Amp 40 120 ℃/W PF -55 to +150 θ VC for V CE(sat) 3.0 ℃ - 65 to +175 +25°C TO +125°C ℃ 0.50 0.70 – 0.5 0.85 –55°C TO +25°C 0.5 0.92 Volt mAm +25°C TO +125°C 10 –1.0 0.9 –55°C TO +25°C –1.5 θ VB for V BE(sat) –2.0 0 5.0 2.0 0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SYMBOL FM120-MH FM130-MH FM140-MH 1- Measured0.2at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.0 1.0 30 1.0 1.0 0.5 V BE @ V CE =1.0 V 0.6 Maximum Average Reverse Current at @T A=25℃ 1.0 0.7 -55 to +125 TSTG Maximum Forward Voltage at 1.0A DC 0.4 V BE(sat) @ I C /I B =10 TJ NOTES: 0.5 CJ CHARACTERISTICS Rated DC Blocking Voltage 0.3 I B , BASE CURRENT (mA) RΘJA 0.8 0.2 Figure 14. Collector Saturation Region Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 1.2 IO 0.1 IFSM COEFFICIENT (mV/ °C) 0.031(0.8) Typ. Figure 13. DC Current Gain • Polarity : Indicated by cathode band • Mounting Position : Any 1.0 • Weight : Approximated 0.011 gram 7.0 I C , COLLECTOR CURRENT (mA) Method 2026 5.0 20 50 100 200 0 20 40 60 80 100 120 140 160 180 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. “ON” Voltages Figure 16. Temperature Coefficients 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SC-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" Mechanical data .067(1.70) .059(1.50) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .067(1.70) .059(1.50) MIL-STD-19500 /228 .012(0.30)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .040(0.95) .030(0.75) 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .008(0.20) 13 14 .004(0.10) 30 40 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 VDC 20 30 .043(1.10) Maximum DC Blocking Voltage .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 .031(0.80) .024(0.60) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 Volts mAmps 10 .013(0.33) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .009(0.23) 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2014-01 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) capability. • High surge MMBT3906TT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.