2SB1073(SOT 89)

WILLAS
FM120-M+
2SB1073 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
TRANSISTOR
better(PNP)
reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATURES
SOT-89
SOD-123H
optimize board space.
Low
collector-emitter
power loss, high saturation
efficiency. voltage VCE(sat)
• Low
High
current
capability,
low forward
•
Large peak collector current
IC voltage drop.
• High surge capability.
Pb-Free
package is available
• Guardring for overvoltage protection.
RoHS
product
for packing
high-speed
switching.code suffix ”G”
• Ultra
Silicon
epitaxial
planar
metal silicon
•
Halogen free product forchip,
packing
code junction.
suffix “H”
Lead-free parts meet environmental standards of
•
Moisture Sensitivity Level 1
z
z
z
z
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
1
0.071(1.8)
0.056(1.4)
2
3. EMITTER
MIL-STD-19500 /228
0.012(0.3) Typ.
3
product for(T
packing
code
suffix "G"
• RoHS
MAXIMUM
RATINGS
unless
otherwise noted)
a=25℃
Halogen free product for packing code suffix "H"
SymbolMechanical
Parameter
data
VCEO
VEBO
PC
TJ
Tstg
0.040(1.0)
0.024(0.6)
V
: UL94-V0 rated
flame retardant -30
• Epoxy
Collector-Base
Voltage
• Case : Molded plastic, SOD-123H
Collector-Emitter Voltage
-20
V ,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
Method 2026
Collector
Currentby
-Continuous
• Polarity
: Indicated
cathode band
CollectorPosition
Power :Dissipation
Any
• Mounting
• Weight
: Approximated
Junction
Temperature0.011 gram
IC
Unit
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
VCBO
Value
-7
V
-4
A
0.5
W
150
℃
Dimensions in inches and (millimeters)
℃
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Storage Temperature
-55-150
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half
wave, 60Hz, resistive of inductive
load.
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
unless otherwise specified)
For capacitive load, derate current by 20%
Parameter RATINGS
Marking Code
FM130-MH FM140-MH FM150-MH FM160-MH
Symbol
Test conditions
MinFM180-MH
Typ FM1100-MH
Max FM1150-MH
Unit FM1200-MH
SYMBOL FM120-MH
Collector-base
breakdown
voltage
Maximum Recurrent
Peak Reverse
Voltage
Maximum RMS Voltage
Collector-emitter breakdown voltage
Maximum DC Blocking Voltage
Maximum Average
Forward Rectified
Emitter-base
breakdown
voltageCurrent
12
13
14
40
15
50
16
60 -30
18
80
10
100
115
150V
120
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
Pr
el
=
0
V(BR)CBO
E 30
20
VRRM IC=-10μA,I
=
V(BR)CEO IC=-1mA,IB 0
IO
=
IE=-10μA,IC 0
V(BR)EBO
1.0
-7
30
Peak Forward Surge Current 8.3 ms single half sine-wave
=
ICBOIFSM VCB=-30V,IE 0
Collector
cut-off current
superimposed on rated load (JEDEC method)
=
IEBORΘJA VEB=-7V,IC 0 Typicalcut-off
Thermalcurrent
Resistance (Note 2)
Emitter
CJ
Typical Junction Capacitance (Note 1)
hFE TJ
DCOperating
currentTemperature
gain
Range
Storage Temperature Range
Collector-emitter
saturation voltage
V
V
-0.1
μA
-0.1
μA
40
120
120
-55 to +150
315
- 65 to +175
-1
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
fT V F
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55
to +125
VCE=-2V,I
=
C -2A
=
IC=-3A,IB -100mA
VCE(sat)
Transition
frequency
Maximum Forward
Voltage at 1.0A DC
Collector output capacitance
TSTG
CHARACTERISTICS
-20
@T A=125℃
Cob IR
V=
=
-50mA,f
CE=-6V,IC
0.50 200MHz
VCB=-20V,I
=
=
E 0,f 1MHz
120
0.85
0.70
0.5
40
10
MHz
0.9
0.92
pF
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION
OF hFE
2- Thermal Resistance From Junction to Ambient
Rank
Range
Marking
2012-06
2012-0
Q
R
120-205
180-315
IQ
IR
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1073THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-89
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
Dimensions in inches and (millimeters)
ina
• Epoxy : UL94-V0 rated flame retardant
.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.061REF
• Polarity : Indicated by cathode band
(1.55)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.167(4.25)
Marking Code
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH FM140-MH
.102(2.60)
.154(3.91)
Maximum
Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
.023(0.58)
14
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
.016(0.40)
20
Peak Forward
Surge Current 8.3 ms single half sine-wave
.047(1.2)
superimposed on rated load (JEDEC method)
.031(0.8)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
13
30
14
15
.091(2.30)
40
50
16
60
18
80
10
100
115
150
120
200
Vo
21
28
35
42
56
70
105
140
Vo
30
40
50
60
80
100
150
200
Vo
1.0
30
40
120
-55 to +125
Am
℃
P
-55 to +150
℃
- 65 to +175
.197(0.52)
.017(0.44)
.013(0.32)
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
.014(0.35)
.118TYP
0.9
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
(3.0)TYP
Rated DC Blocking Voltage
Am
@T A=125℃
IR
10
℃
UN
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC
Rev.C CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1073 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Packing capability, low forward voltage drop.
• High current Device PN (3)
(1)
(2)
surge capability.
• High
2SB1073 x
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
high-speed switching.
• Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product im
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Marking for any errors or inaccuracies. Data sheet specifications and its information Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
V
V
RRM
contained are intended to provide a product description only. "Typical" parameters V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum
Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
A
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
Pr
el
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
-55 to +125
Operating
Temperature Range
TJ
WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature Range
TSTG
-55 to +150
- 65 to +175
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
applications where a failure or malfunction of component or circuitry may directly V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
@T
A=125℃
Rated DC
Blocking
Voltage
of WILLAS. Customers using or selling WILLAS components for use in 10
NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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