WILLAS FM120-M+ SESD5ZxxVTHRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H General Description optimize board space. Features power loss, highare efficiency. • Low The SESD5Z Series designed to protect voltage • High current capability, low forward voltage drop. sensitive from ESD and transient voltage surge capability. • Highcomponents events. Excellentforclamping capability, low leakage, and overvoltage protection. • Guardring Ultra high-speed switching. • fast response time, make these parts ideal for ESD • Silicon epitaxial planar chip, metal silicon junction. protection on designs board standards space is parts meetwhere environmental of at a • Lead-free z 0.146(3.7) Small Body Outline Dimensions 0.130(3.3) z Low Body Height z Stand−off Voltage: 3 V − 12.0 V z µs Peak Power up to 200 Watts @ 8 x 200.056(1.4) z Low Leakage z Response Time is Typically < 1 ns z Pb-Free package is available 0.040(1.0) 0.024(0.6) RoHS product for packing code suffix ”G” Halogen freeTyp.product for packing code suffix “H”Typ. 0.031(0.8) 0.031(0.8) MIL-STD-19500 /228 premium. • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Applications • Epoxy : UL94-V0 rated flame retardant z z z z Digital cameras • Polarity : Indicated by cathode band Power supplies • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) Pulse Cellular phonesplastic, SOD-123H • Case : Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 z Portable devices Method 2026 0.012(0.3) Typ. Moisture Sensitivity Level 1 Complies with the following standards Dimensions in inches and (millimeters) IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MIL STD 883E - Method 3015-7 Class 3 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Functional For capacitive load,diagram derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave SOD-523 superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note (T 1) =25°C Absolute Ratings Operating Temperature Range amb Symbol Storage Temperature Range PPP TL ) CJ TJ Parameter TSTG CHARACTERISTICS 16 60 18 80 Rated DC TopBlocking Voltage Operating VF IR @T A=125℃Range Temperature 35 42 50 60 IEC61000-4-2 (ESD) -55 to +125 2012-06 56 70 105 140 80 100 150 200 -55 to +150 - 65 to +175 0.50 Value Units 200 W 260 °C 0.5 -55 to +155 °C 10 -40 to +125 °C 150 °C ±15 ±8 kV 40 A 25 kV 400 V 0.70 0.85 air discharge contact discharge Per Human Body Model Per Machine Model 2012-09 120 200 IEC61000-4-4 (EFT) ESD Voltage 115 150 40 120 Maximum junction temperature 2- Thermal Resistance From Junction to Ambient 10 100 1.0 30 Maximum lead temperature for soldering during 10s 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 15 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH TstgAverage Reverse Storage Temperature Range Maximum Current at @T A=25℃ NOTES: Tj 14 40 Peak Pulse Power (tp = 8/20μs) Maximum Forward Voltage at 1.0A DC 25 kV HBM (Human Body Model) 0.9 0.92 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5ZxxVTHRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Electrical Parameter Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Symbol Parameter • Low profile surface mounted application in order to board space. IPPoptimizeMaximum Reverse Peak Pulse Current • Low power loss, high efficiency. V•CHigh current Clamping Voltage @ IPP voltage drop. capability, low forward High surge capability. • VRWM Working Peak Reverse Voltage • Guardring for overvoltage protection. Maximum Reverse Leakage Current @ I•R Ultra high-speed switching. VRWM planar chip, metal silicon junction. • Silicon epitaxial I•T Lead-free Test Current parts meet environmental standards of SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 V•BRRoHS product Breakdown Voltage @ I"G" T for packing code suffix Halogen free product for packing code suffix "H" IF Forward Current Mechanical data 0.040(1.0) VF Forward Voltage @ IF 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA Part Numbers Method 2026 VBR • Polarity : Indicated by cathode band • Mounting Position : Any Min. Typ. Max. • Weight : Approximated 0.011 gram VF Dimensions in inches and (millimeters) IT VRWM IR MAXIMUM ANDVELECTRICAL CHARACTERISTICS V RATINGS V mA V µA Ratings at 25℃ ambient temperature unless otherwise specified. SESD5Z3V3 5.0 resistive 6.0of inductive 7.0 load. 1 Single phase half wave, 60Hz, For capacitive load, derate current by 20% SESD5Z5V 6.0 6.6 7.1 7.5 8.1 8.6 RATINGS SESD5Z7V Marking Code Maximum Recurrent Peak Reverse SESD5Z12V 13.5 Voltage 14.2 Maximum RMS Voltage 1 Maximum DC Blocking Voltage 1 VRMS bias V mA pF 3.0 1 1.25 200 35 5.0 1 1.25 200 30 VDC 1 12 20 1.25 16 18200 80 200 10 100 14 56 70 20 80 100 7.0 13 30 12.0 14 40 21 28 30 40 1 1 15 50 35 60 1.25 42 50 60 1. VBR is measured with a pulse test current IT at an ambient temperature of 25℃． IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Characteristics Typical Thermal Resistance (Note 2) RΘJA CJ Operating Temperature Range TJ 25115 25150 120 200 105 140 150 200 1.0 30 IFSM Typical Junction Capacitance (Note 1) Storage Temperature Range Typ. 0v SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 15.0 VRRM *Surge current waveform per Figure 1. IF Max. C 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Fig1. Pulse Waveform 2012-09 2012-06 Fig2.Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5ZxxVTHRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch process Application Note better reverse leakage current and thermal resistance. SOD-123H Electrostatic discharge (ESD) is a major of failure in electronic systems. Transient Voltage mounted application in ordercause to • Low profile surface optimize board space. Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming 0.146(3.7) loss, high efficiency. • Low power 0.130(3.3) 0.012(0.3) Typ. transient to current a low enough level such that damage capability, low forward voltage drop. to the protected semiconductor is prevented. • High capability. • High surge Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection • Guardring for overvoltage protection. 0.071(1.8) of elements, high-speed between switching.the signal line to ground. As the transient rises above the operating voltage • Ultraconnected 0.056(1.4) Silicon epitaxial planar chip, metal silicon junction. • the device, the TVS becomes a low impedance path diverting the transient current to ground. The SESD5Z • Lead-free parts meet environmental standards of Series MIL-STD-19500 is the ideal board /228evel protection of ESD sensitive semiconductor components. RoHS product for packing code suffix "G"design flexibility in the design of high density boards where the space • The tiny SOD-523 package allows Halogen free product for packing code suffix "H" saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , SOD-523 Mechanical Data • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. .035(0.90) .028(0.70) .014(0.35) .009(0.25) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .051(1.30) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .043(1.10) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .067(1.70) CHARACTERISTICS .059(1.50) Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 16 60 18 80 10 100 115 150 120 200 42 56 70 .028(0.70) 80 100 .020(0.50) 1.0 105 140 60 150 200 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 0.50 Maximum Average Reverse Current at @T A=25℃ 14 40 RΘJA Typical Thermal Resistance (Note 2) .008(0.20) .002(0.05) Maximum Recurrent Peak Reverse Voltage IR in inches and (millimeters) Dimensions @T A=125℃ 0.70 0.85 0.5 0.9 0.92 10 Marking NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Type number 2- Thermal Resistance From Junction to Ambient 2012-09 Marking code SESD5Z3V3 ZE SESD5Z5V ZF ZH 12V SESD5Z7V SESD5Z12V 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD5ZxxV Transient Voltage Suppressors for ESD Protection Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09 WILLAS ELECTRONIC CORP.