SESD9D5C(SOD 923)

WILLAS
FM120-M+
SESD9D5CTHRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection-20V- 200V
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
General
Description
surface mounted application in order to
• Low profile
Features
board space.
Theoptimize
SESD9D5C
is designed to protect voltage
• Low power loss, high efficiency.
sensitive
fromlow
ESD
andvoltage
transient
voltage
current capability,
forward
drop.
• Highcomponents
surge capability.
• High
events.
Excellent
clamping capability, low leakage, and
• Guardring for overvoltage protection.
fast response time, make these parts ideal for ESD
• Ultra high-speed switching.
protection
designs
where
board
space
is at a
epitaxial
planar
chip, metal
silicon
junction.
• Siliconon
Lead-free
parts
meet
environmental
standards
of
•
premium. Because of its small size, it is suited for use
z
Small Body Outline Dimensions
z
Low Body Height
z
Peak Power up to 150 Watts @ 8 x 20 μs Pulse
z
Low Leakage current
z
Response Time is Typically < 1 ns
z
Pb-Free package is available
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
in cellular
players,
digital
product forMP3
packing
code suffix
"G" cameras and
• RoHS phones,
Halogen
free
product
for
packing
code
suffix
"H" space is
many other portable applications where
board
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix “H”
Mechanical data
0.040(1.0)
at a premium.
z Moisture Sensitivity Level 1
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
Complies
with
0.031(0.8)
Typ. the following standards
0.031(0.8) Typ.
,
Applications
• Terminals :Plated terminals, solderable per MIL-STD-750 IEC61000-4-2
z Cellular phones
Method 2026
Level 4 15 kV (air discharge)
Dimensions in inches and (millimeters)
z Portable
devices
• Polarity : Indicated by cathode band
8 kV(contact discharge)
Position : Any
• Mounting
z Digital
cameras
MIL STD 883E - Method 3015-7 Class 3
• Weightsupplies
: Approximated 0.011 gram
z Power
25 kV HBM (Human Body Model)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Functional
diagram
Ratings
at 25℃ ambient
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
SOD-923
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load (JEDEC method)
Absolute Ratings (Tamb=25°C )
Typical Thermal Resistance (Note 2)
Symbol
CJ
Typical Junction Capacitance (Note 1)
PPPTemperature
Peak
Pulse
Operating
Range
Parameter
Power (tp = 8/20μs)
TJ
Storage Temperature Range
RΘJA
1.0
30
-55 to +125
Tstg
Storage Temperature
CHARACTERISTICS
VF
Range
Maximum Average Reverse Current at @T A=25℃
Tj
IR
Maximum junction temperature
Rated DC Blocking Voltage
NOTES:
- 65 to +175
@T A=125℃
IEC61000-4-2 (ESD)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
0.70
0.5
10
air discharge
contact discharge
IEC61000-4-4 (EFT)
2- Thermal Resistance From Junction to Ambient
2012-09
ESD Voltage
Per Human Body Model
Per Machine Model
2012-06
℃
Units
-55 to +150
150
W
260
°C
Range
-55 toFM1100-MH
+155 FM1150-MH
°C FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Maximum
at 1.0A Temperature
DC
T Forward Voltage
Operating
op
Value
TSTG
Maximum lead temperature for soldering during 10s
40
120
TL
-400.85
to +125
0.9
°C
150
°C
±15
±8
kV
40
A
25
kV
400
V
U
0.92
m
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD9D5CTHRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
Electrical
Parameter
optimize board space.
• Low power loss, high efficiency.
low forward voltage drop.
• High current capability,Parameter
Symbol
capability.
• High surge
Maximum Reverse Peak Pulse
I•PPGuardring for overvoltage protection.
Current
• Ultra high-speed switching.
V
Clamping
Voltage
IPPsilicon junction.
planar
chip, @
metal
• CSilicon epitaxial
Lead-free
parts
meet
environmental
standards of
•
V
Working Peak Reverse Voltage
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
RWM
MIL-STD-19500 /228
Maximum
Reverse
Leakage
Current
for packing
code suffix
"G"
•I RoHS product
R
Halogen@
freeVproduct
for packing code suffix "H"
RWM
Mechanical
data
IT
Test Current
Epoxy : UL94-V0 rated flame retardant
V•BR
Breakdown Voltage @ IT
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Position : Any
• Mounting
Electrical
Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
• Weight
: Approximated 0.011 gram
Part
Numbers
VBR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
I
I
Ratings at 25℃ ambient temperature unless otherwise specified.
Min.
Typ.
Max.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SESD9D5C
V
V
5.6
6.7
RATINGS
Marking Code
V
R
RWM
R
C
Typ. 0v
bias
mA
V
µA
pF
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
7.8
1 13
30
14
40
5.0
15
50
16
60
18
80
1
10
100
115
150
11
120
200
V
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
*Surge
waveform
Maximumcurrent
DC Blocking
Voltage per Figure 1.
VDC
20
30
40
50
60
80
100
150
200
V
is measured
a pulse
1.
VBR Average
Maximum
Forwardwith
Rectified
Currenttest currentIOIT at an ambient temperature of 25℃. 1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
A
IFSM
30
40
120
-55 to +125
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1. Pulse Waveform
2012-09
2012-06
Fig2. Power Derating Curve
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD9D5CTHRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection-20V- 200V
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Application
Note
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
SOD-123HTransient Voltage
Electrostatic discharge (ESD) is a major cause of failure in electronic systems.
• Low profile surface mounted application in order to
optimize(TVS)
board are
space.
Suppressors
an ideal choice for ESD protection. They are capable of clamping the incoming transient
0.146(3.7)
• Low power loss, high efficiency.
to a low enough level such that damage to the protected semiconductor is prevented. 0.130(3.3)
0.012(0.3) Typ.
• High current capability, low forward voltage drop.
Surface
mount
TVS offers the best choice for minimal lead inductance. They serve as parallel protection
capability.
• High surge
for overvoltage
• Guardring
elements,
connected
betweenprotection.
the signal lines to ground. As the transient rises above the operating0.071(1.8)
voltage of
• Ultra high-speed switching.
0.056(1.4)
the device,
TVS becomes
a metal
low impedance
path diverting the transient current to ground. The SESD9D5C
epitaxial
planar chip,
silicon junction.
• Siliconthe
Lead-free
parts
meet
environmental
standards
of semiconductor components.
•
is the ideal board evel protection of ESD sensitive
MIL-STD-19500 /228
The
tinyproduct
SOD-923
package
allows
for packing
code suffix
"G" design flexibility in the design of high density boards where the space
• RoHS
Halogen
free
product
for
packing
code
suffix
"H"
saving is at a premium. This enables to
shorten
the routing and contributes to hardening against ESD.
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Molded plastic, SOD-123H
• Case :Mechanical
SOD-923
Data
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.006(0.15)
.010(0.25)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
.030(0.75)
.033(0.85)
• Weight : Approximated
0.011 gram
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
.017(0.43)
Peak Forward Surge
Current 8.3 ms single half sine-wave
.013(0.34)
superimposed on
rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
.003(0.07)
.007(0.17)
.022(0.55)
.026(0.65)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
CHARACTERISTICS
.037(0.95)
Maximum Forward Voltage at 1.0A DC
.041(1.05)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50
0.85
0.5
IR
Dimensions in inches and (millimeters)
0.70
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Marking
Type number
6ESD'&
2012-09
2012-06
Marking code
&
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
SESD9D5C
Transient Voltage Suppressors for ESD Protection
Ordering Information: Device PN SESD9D5C ‐T(1)G(2)‐WS Packing Tape&Reel: 8 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09
WILLAS ELECTRONIC CORP.