BC846A/BWT1 FM120-M+ THRU BC847A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE WILLAS Pb Free Product Package outline NPNFeatures Silicon • Batch process design, excellent power dissipation offers better reversethat leakage and resistance. We declare the current material ofthermal product compliance with • Low profile surface mounted application in order to RoHS requirements. RoHS product for packing code suffix "G" optimize board space. Halogen free product forefficiency. packing code suffix "H" loss, high • Low power Moisture Sensitivity Level capability, low1forward voltage drop. • High current ORDERING INFORMATION capability. • High surge • Guardring for overvoltage protection. Device Package Shipping high-speed switching. • Ultra BC84xxWT1 SOT-323 3000/Tape&Reel chip, metal silicon junction. • Silicon epitaxial planar • Lead-free parts meet environmental standards of SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT–323 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for packing code suffix "G" • RoHS product MAXIMUM RATINGS Halogen free product for packing code suffix "H" Symbol BC846 Rating Mechanical data BC847 BC848 Unit 30 V Collector–Emitter Voltage CEO rated flameVretardant • Epoxy : UL94-V0 65 45 Collector–Base Voltage V CBO plastic, SOD-123H • Case : Molded 80 50 30 • Terminals :Plated per Emitter–Base Voltage terminals, solderable V EBO 6.0 MIL-STD-750 6.0 Method 2026 100 100 Collector Current — Continuous IC • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram , 0.040(1.0) 0.024(0.6) V 0.031(0.8) Typ. 5.0 V 100 mAdc 0.031(0.8) Typ. Dimensions in inches and (millimeters) THERMAL CHARACTERISTICS Characteristic Symbol MAXIMUM Total Device Dissipation RATINGS FR– 5 Board,AND (1) ELECTRICAL PD = 25°C T Ratings Aat 25℃ ambient temperature unless otherwise specified. Resistance, Junction to Ambient Single Thermal phase half wave, 60Hz, resistive of inductive load. R θJA Total Device Dissipation PD For capacitive load, derate current by 20% Junction and Storage Temperature T J , T stg RATINGS Maximum Recurrent Peak Reverse Voltage DEVICE MARKING VRRM °C/W mW/°C °C 12 20 13 30 14 40 14 21 28 VRMS BC846AWT1= 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1= 1F 20 30 40 VDC BC847CWT1 = 1G ; BC848AWT1 = 1J ; BC848BWT1 = 1K; BC848CWT1 = 1L Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave (TA = 25°C unless otherwise noted.) ELECTRICAL CHARACTERISTICS IFSM 2 EMITTER 15 50 16 60 18 80 10 100 115 150 120 200 35 42 56 70 105 140 50 60 80 100 150 200 Characteristic TypicalOFF Junction Capacitance (Note 1) CHARACTERISTICS RΘJA CJ Symbol Min 1.0 30 Typ Max 40 120 -55 to +125 Unit -55 to +150 65 — — - 65 Storage (ICTemperature = 10 mA) Range V (BR)CEO 45 — — to +175 v 30 — — FM150-MH FM160-MH CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH Collector–Emitter Breakdown Voltage 80 — — FM180-MH FM1100-MH FM1150-MH FM1200-MH BC846 Series 0.9 Maximum Voltage at 1.0A DC 0.92 VF 0.5050 0.70 — BC847 Series (IC =Forward 10 µA, V = 0) V — v 0.85 EB (BR)CES BC848 Series 0.5 Maximum Average Reverse Current at @T A=25℃ 30 — — IR @T A=125℃ Rated Collector–Base DC Blocking Voltage Breakdown Voltage 80 — —10 BC846 Series Operating TemperatureBreakdown Range Voltage Collector–Emitter TJ BC846 Series BC847 Series TSTG BC848 Series (IC = 10 µA) BC847 Series BC848 Series 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. BC846 Series Emitter–Base Breakdown Voltage 2- Thermal Resistance From Junction to Ambient BC847 Series (IE = 1.0 µA) BC848 Series NOTES: 833 2.4 –55 to +150 1 BASE Maximum DC Blocking Voltage Typical Thermal Resistance (Note 2) CHARACTERISTICS 150 mW Maximum RMS Voltage superimposed on rated load (JEDEC method) 3 COLLECTOR Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Max Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) V (BR)CBO V (BR)EBO I CBO 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — 15 5.0 v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC846A/BWT1 FM120-M+ THRU BC847A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE WILLAS Pb Free Produc Package ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Features power dissipation offers • Batch process design, excellent Characteristic better reverse leakage current and thermal resistance. ON profile CHARACTERISTICS surface mounted application in order to • Low optimize board space. DC Current Gain BC846A, BC847A, BC848A • Low power loss, high efficiency. BC846B, BC847B, BC848B (I C = 10 µA, V CE = 5.0 V) • High current capability, low forward voltage drop. BC847C, BC848C • High surge capability. BC846A, BC847A, BC848A (I C = 2.0 mA, V CE = 5.0 V) for overvoltage protection. • Guardring BC846B, BC847B, BC848B • Ultra high-speed switching. BC847C, BC848C • Silicon epitaxial planar chip, metal silicon junction. Collector–Emitter Saturation Voltage (I Cstandards = 10 mA, I Bof= 0.5 mA) parts meet environmental • Lead-free MIL-STD-19500 /228 Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) product Saturation for packingVoltage code suffix • RoHS Base–Emitter (I C ="G" 10 mA, I B = 0.5 mA) Halogen free product for packing code suffix "H"I = 5.0 mA) Base–Emitter Saturation Voltage (I C = 100 mA, B Mechanical data Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) : UL94-V0 rated retardant • Epoxy Base–Emitter Voltage (I Cflame = 10 mA, V CE = 5.0 V) plastic, SOD-123H • Case : MoldedCHARACTERISTICS SMALL–SIGNAL • Terminals :Plated terminals, solderable per MIL-STD-750 Current–Gain — Bandwidth Product Symbol Min Typ h FE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — V CE(sat) V f = 1.0 kHz, BW = 200 Hz) BE(sat) V BE(on) Max SOD-123H Unit — — — 220 450 800 0.25 0.6 — — 700 770 — 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) V V mV 0.031(0.8) Typ. , fT 2026 (I C = 10 mA,Method V CE = 5.0 Vdc, f = 100 MHz) Polarity : Indicated by CB cathode Output Capacitance (V = 10 V, band f = 1.0 MHz) • Noise Figure (I C = 0.2 mA, Position : Any • Mounting V CE = 5.0 Vdc, R S = 2.0 kΩ, • Weight : Approximated 0.011 gram outline 0.031(0.8) Typ. 100 — — MHz — Dimensions — in inches 4.5and (millimeters) pF dB — — 10 — — 4.0 Cobo NF BC846A, BC847A, BC848A 0.040(1.0) 0.024(0.6) BC846B, BC847B, BC848B BC847C, BC848C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS hFE, NORMALIZED DC CURRENT GAIN 0.9 0.8 V BE(sat) @ I C /I B=10 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS 1.0 0.8 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 0.6 Voltage Maximum RMS VRMS 14 21 VDC 20 30 Maximum DC Blocking Voltage 0.4 Maximum Average Forward Rectified Current 0.3 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed 0.2 on rated load (JEDEC method) 0.2 0.5 1.0 2.0 5.0 IO IFSM 20 50 100 200 VCE, COLLECTOR– EMITTER VOLTAGE (V) T A = 25°CTSTG CHARACTERISTICS I C= 200 mA VF 1.2 I C = ICurrent Maximum Average Reverse = I Cat = 50@T mAA=25℃I C = 100 mA C NOTES: @T A=125℃ IR 0.8 1- Measured0.4 at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 0.02 0.1 1.0 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region 2012-06 2012- 0.4 0.3 15 50 16 18 10 V BE(on) @ V CE = 10 V 60 80 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 0.2 V CE(sat) @ I C /I B = 10 0.1 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 CURRENT (mAdc) I C , COLLECTOR40 50 70 100 120and “On” Voltages Figure 2. “Saturation” -55 to +150 - 65 to +175 –55°C to +125°C 1.2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 0.5 -55 to +125 1.0 TJ Operating Temperature Range 2.0 10 mA 20 mA Rated DC Blocking Voltage 14 40 0.6 θVB , TEMPERATURE COEFFICIENT (mV/ °C) Typical Junction Capacitance 1) Figure 1. (Note Normalized DC Current Gain CJ 1.6 0.7 C Storage Temperature Range 13 30 0 10 Typical Thermal Resistance (Note 2) CURRENT (mAdc)RΘJA I , COLLECTOR T A = 25°C T A = 25°C Marking Code 1.0 V, VOLTAGE (VOLTS) Ratings at 25℃ ambient temperature unless otherwise specified. 2.0 Single phase half wave, 60Hz, resistive of inductive load. V CE = 10 V 1.5 For capacitive load, derate current by 20% 10 20 1.6 0.50 0.70 0.85 0.9 0.92 0.5 10 2.0 2.4 2.8 0.2 1.0 10 100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. FM120-M+ BC846A/BWT1 THRU BC847A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE Pb Free Produc WILLAS Package outline Features • Batch process design, excellent power dissipation offers BC847 / BC848 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H drop. • High current capability, low forward voltage T A = 25°C • High surge capability. protection. • Guardring for overvoltage 5.0 C ib • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 3.0 • Lead-free parts meet environmental standards of 7.0 C ob MIL-STD-19500 /228 RoHS product for packing code suffix "G" • 2.0 Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 1.0 Case Molded plastic, SOD-123H • 0.4 0.6: 0.81.0 2.0 4.0 6.0 8.010 20 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS) optimize board space. 10.0 • Low power loss, high efficiency. 400 300 0.146(3.7) 0.130(3.3) 200 0.071(1.8) V CE =0.056(1.4) 10V T A = 25°C 100 80 60 40 30 0.040(1.0) 0.024(0.6) 20 0.5 0.7 1.0 40 • Terminals terminals, solderable V R ,:Plated REVERSE VOLTAGE (VOLTS) per MIL-STD-750 I C , COLLECTOR CURRENT (mAdc) T A = 25°C 12 20 0.2 RMS Voltage Maximum VRMS VDC Maximum DC Blocking Voltage 0.2 Forward 1.0 Rectified Current 10 Maximum0.1 Average I C , COLLECTOR (mA) Peak Forward Surge Current 8.3 ms singleCURRENT half sine-wave Figure 7. DC Current superimposed on rated load (JEDEC method) Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 14 40 14 21 28 V 20 30 0 CJ T TAJ= 25°C 50mA 100mA IR @T A=125℃ 0.4 2- Thermal Resistance From Junction to Ambient 2012-06 2012- 0.2 0.5 1.0 2.0 120 200 @ I35 /I B= 10 42 C 56 70 105 140 100 150 50 100 200 200 50 1.0 2.0 60 80 5.0 1.0 10 20 40 120 –1.0 -55 to +125 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.05 0.1 115 150 NOTES: 0 0.02 10 100 -55 to +150 - 65 to +175 –1.4 200mA SYMBOL FM120-MH FM130-MH –1.8 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse at @T A=25℃ I Current = 18 80 Figure 8.30 “On” Voltage VF Maximum Forward Voltage at 1.0A DC 16 60 I C , COLLECTOR CURRENT (mA) TSTG CHARACTERISTICS 40 0.5 IFSM Operating Temperature Range Storage Temperature Range 1.6 15 50 CE(sat) 0.2 Typical2.0 Junction Capacitance (Note 1) Rated DC Blocking Voltage10 mA VBE @ VCE = 5.0 V 13 30 0.2 RΘJA Typical Thermal Resistance (Note 2) 0.6 IO 100 C V BE(sat) @ I C /I B = 10 0.4 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VRRM 0.8 V, VOLTAGE (VOLTS) RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage 1.2 50 0.031(0.8) Typ. 0.8 RATINGS 20mA 30 1.0 Marking Code 20 Dimensions in inches and (millimeters) Ratings 2.0at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 1.0 For capacitive load, derate current by 20% 0.5 5.0 7.010 Figure 6. Current–Gain – Bandwidth Product • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram θVB , TEMPERATURE COEFFICIENT (mV/°C) hFE , DC CURRENT GAIN (NORMALIZED) 2.0 3.0 0.031(0.8) Typ. , Method5.2026 Figure Capacitances V CE = 5V T AMAXIMUM = 25°C 0.012(0.3) Typ. 5.0 10 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region 20 0.50 θ VB for V 0.70 BE –2.2 0.85 –55°C to 125°C 0.5 0.9 0.92 10 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. FM120-M+ BC846A/BWT1 THRU BC847A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE Pb Free Produc WILLAS Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. application in order to • Low profile surface mounted BC846 SOD-123H 10 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 6.0 Mechanical data • Epoxy : UL94-V0 rated flameCretardant 4.0 ob 0.146(3.7) 0.130(3.3) fT, CURRENT– GAIN – BANDWIDTH PRODUCT T C, CAPACITANCE (pF) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. 40 • High surge capability. • Guardring for overvoltage protection. T A= 25°C • Ultra high-speed switching. 20 • Silicon epitaxial planar chip, metal silicon junction. C ib standards of • Lead-free parts meet environmental • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 2.0 Method 0.5 1.02026 2.0 5.0 10 20 V , REVERSE VOLTAGE (VOLTS) Polarity : Indicated by cathode band R 0.1 0.2 50 500 0.012(0.3) Typ. V CE= 5 V T A= 25°C 0.071(1.8) 0.056(1.4) 200 100 50 0.040(1.0) 0.024(0.6) 20 0.031(0.8) Typ. 1.0 100 0.031(0.8) Typ. 5.0 10 50 100 I C , COLLECTOR CURRENT (mA) • Figure: Any 11. Capacitance • Mounting Position • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Figure 12. Current–Gain – Bandwidth Product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC846A/BWT1 FM120-M+ THRU BC847A/B/CWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- BC848A/B/CWT1 200V General Purpose Transistors SOD-123+ PACKAGE WILLAS Pb Free Produc Package outline Features offers • Batch process design, excellent power dissipation SOT-323 better reverse leakage current and thermal resistance. SOD-123H .004(0.10)MIN. • Low profile surface mounted application in order to optimize board space. .054(1.35) .045(1.15) • Low power loss, high efficiency. .087(2.20) drop. • High current capability, low forward voltage • High surge capability. .070(1.80) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) .056(1.40) Method 2026 • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM .016(0.40) VRMS .008(0.20) VDC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 12 20 14 20 13 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 14 40 15 50 16 60 18 80 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 120 200 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 IO IFSM RΘJA 115 150 21 1.0 30 Dimensions in inches and (millimeters) Typical Thermal Resistance (Note 2) 10 100 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. BC846A/BWT1 FM120-M+ THRU BC847A/B/CWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE WILLAS Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low power Device PN 0.130(3.3) Packing low forward voltage drop. • High current capability,(1) ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • HighPart Number G Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage which may be included on WILLAS data sheets and/ or specifications can VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.