BC84xxWT1(SOT 323)

BC846A/BWT1
FM120-M+
THRU
BC847A/B/CWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
BC848A/B/CWT1
SOD-123+ PACKAGE
WILLAS
Pb Free Product
Package outline
NPNFeatures
Silicon
• Batch process design, excellent power dissipation offers
better
reversethat
leakage
and
resistance.
We declare
the current
material
ofthermal
product
compliance with
• Low profile surface mounted application in order to
RoHS
requirements. RoHS product for packing code suffix "G"
optimize board space.
Halogen
free product
forefficiency.
packing code suffix "H"
loss, high
• Low power
Moisture
Sensitivity
Level
capability,
low1forward voltage drop.
• High current
ORDERING
INFORMATION
capability.
• High surge
• Guardring for overvoltage protection.
Device
Package
Shipping
high-speed switching.
• Ultra
BC84xxWT1
SOT-323
3000/Tape&Reel
chip, metal silicon
junction.
• Silicon epitaxial planar
• Lead-free parts meet environmental standards of
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT–323
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
for packing code suffix "G"
• RoHS product
MAXIMUM
RATINGS
Halogen free product for packing code suffix "H"
Symbol
BC846
Rating
Mechanical
data
BC847
BC848
Unit
30
V
Collector–Emitter
Voltage
CEO
rated flameVretardant
• Epoxy : UL94-V0
65
45
Collector–Base
Voltage
V CBO
plastic, SOD-123H
• Case : Molded
80
50
30
• Terminals :Plated
per
Emitter–Base
Voltage terminals, solderable
V EBO
6.0 MIL-STD-750
6.0
Method 2026
100
100
Collector Current — Continuous
IC
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
,
0.040(1.0)
0.024(0.6)
V
0.031(0.8) Typ.
5.0
V
100
mAdc
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
THERMAL CHARACTERISTICS
Characteristic
Symbol
MAXIMUM
Total Device
Dissipation RATINGS
FR– 5 Board,AND
(1)
ELECTRICAL
PD
=
25°C
T
Ratings Aat 25℃ ambient temperature unless otherwise specified.
Resistance,
Junction
to Ambient
Single Thermal
phase half
wave, 60Hz,
resistive
of inductive load. R θJA
Total
Device
Dissipation
PD
For capacitive load, derate current by 20%
Junction and Storage Temperature
T J , T stg
RATINGS
Maximum
Recurrent
Peak Reverse Voltage
DEVICE
MARKING
VRRM
°C/W
mW/°C
°C
12
20
13
30
14
40
14
21
28
VRMS
BC846AWT1= 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1= 1F
20
30
40
VDC
BC847CWT1 = 1G ; BC848AWT1 = 1J ; BC848BWT1 = 1K; BC848CWT1 = 1L
Maximum Average Forward Rectified Current
IO
Peak
Forward Surge Current
8.3 ms single half sine-wave
(TA = 25°C
unless otherwise noted.)
ELECTRICAL
CHARACTERISTICS
IFSM
2
EMITTER
15
50
16
60
18
80
10
100
115
150
120
200
35
42
56
70
105
140
50
60
80
100
150
200
Characteristic
TypicalOFF
Junction
Capacitance (Note 1)
CHARACTERISTICS
RΘJA
CJ
Symbol Min
1.0
30
Typ
Max
40
120
-55 to +125
Unit
-55 to +150
65
—
—
- 65
Storage
(ICTemperature
= 10 mA) Range
V (BR)CEO
45
—
— to +175 v
30
—
—
FM150-MH
FM160-MH
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH
Collector–Emitter
Breakdown Voltage
80
—
— FM180-MH FM1100-MH FM1150-MH FM1200-MH
BC846 Series
0.9
Maximum
Voltage
at 1.0A DC
0.92
VF
0.5050
0.70 —
BC847
Series
(IC =Forward
10 µA, V
=
0)
V
—
v 0.85
EB
(BR)CES
BC848
Series
0.5
Maximum Average Reverse Current at @T A=25℃
30
—
—
IR
@T A=125℃
Rated Collector–Base
DC Blocking Voltage
Breakdown Voltage
80
—
—10
BC846 Series
Operating
TemperatureBreakdown
Range Voltage
Collector–Emitter
TJ
BC846 Series
BC847 Series
TSTG
BC848 Series
(IC = 10 µA)
BC847 Series
BC848 Series
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
BC846 Series
Emitter–Base Breakdown Voltage
2- Thermal Resistance From Junction to Ambient
BC847 Series
(IE = 1.0 µA)
BC848 Series
NOTES:
833
2.4
–55 to +150
1
BASE
Maximum DC Blocking Voltage
Typical Thermal Resistance (Note 2)
CHARACTERISTICS
150
mW
Maximum RMS Voltage
superimposed on rated load (JEDEC method)
3
COLLECTOR
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Max
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V (BR)CBO
V (BR)EBO
I CBO
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
v
v
nA
µA
1.FR–5=1.0 x 0.75 x 0.062in
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC846A/BWT1
FM120-M+
THRU
BC847A/B/CWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
BC848A/B/CWT1
SOD-123+ PACKAGE
WILLAS
Pb Free Produc
Package
ELECTRICAL
CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Features
power dissipation offers
• Batch process design, excellent
Characteristic
better reverse leakage current and thermal resistance.
ON profile
CHARACTERISTICS
surface mounted application in order to
• Low
optimize board space.
DC Current Gain
BC846A, BC847A, BC848A
• Low power loss, high efficiency.
BC846B, BC847B, BC848B
(I C = 10 µA, V CE = 5.0 V)
• High current capability, low forward voltage drop.
BC847C, BC848C
• High surge capability.
BC846A, BC847A, BC848A
(I C = 2.0 mA, V CE = 5.0 V)
for overvoltage protection.
• Guardring
BC846B, BC847B, BC848B
• Ultra high-speed switching.
BC847C, BC848C
• Silicon epitaxial planar chip, metal silicon junction.
Collector–Emitter
Saturation
Voltage (I Cstandards
= 10 mA, I Bof= 0.5 mA)
parts meet
environmental
• Lead-free
MIL-STD-19500
/228
Collector–Emitter Saturation
Voltage (I C = 100 mA, I B = 5.0 mA)
product Saturation
for packingVoltage
code suffix
• RoHS
Base–Emitter
(I C ="G"
10 mA, I B = 0.5 mA)
Halogen
free
product
for
packing
code
suffix
"H"I = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 100
mA,
B
Mechanical
data
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
: UL94-V0
rated
retardant
• Epoxy
Base–Emitter
Voltage
(I Cflame
= 10 mA,
V CE = 5.0 V)
plastic, SOD-123H
• Case : MoldedCHARACTERISTICS
SMALL–SIGNAL
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
Current–Gain
— Bandwidth
Product
Symbol
Min
Typ
h FE
—
—
—
110
200
420
—
—
—
—
580
—
90
150
270
180
290
520
—
—
0.7
0.9
660
—
V CE(sat)
V
f = 1.0 kHz, BW = 200 Hz)
BE(sat)
V BE(on)
Max
SOD-123H
Unit
—
—
—
220
450
800
0.25
0.6
—
—
700
770
—
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
V
mV
0.031(0.8) Typ.
,
fT
2026
(I C = 10 mA,Method
V CE = 5.0
Vdc, f = 100 MHz)
Polarity
:
Indicated
by CB
cathode
Output Capacitance (V
= 10 V, band
f = 1.0 MHz)
•
Noise Figure
(I C = 0.2
mA,
Position
: Any
• Mounting
V
CE = 5.0 Vdc, R S = 2.0 kΩ,
• Weight : Approximated 0.011 gram
outline
0.031(0.8) Typ.
100
—
—
MHz
— Dimensions
— in inches
4.5and (millimeters)
pF
dB
—
—
10
—
—
4.0
Cobo
NF
BC846A, BC847A, BC848A
0.040(1.0)
0.024(0.6)
BC846B, BC847B, BC848B
BC847C, BC848C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
hFE, NORMALIZED DC CURRENT GAIN
0.9
0.8
V BE(sat) @ I C /I B=10
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
RATINGS
1.0
0.8
Maximum Recurrent
Peak Reverse Voltage
VRRM
12
20
0.6 Voltage
Maximum RMS
VRMS
14
21
VDC
20
30
Maximum DC Blocking Voltage
0.4
Maximum Average Forward Rectified Current
0.3
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
0.2 on rated load (JEDEC method)
0.2
0.5
1.0
2.0
5.0
IO
IFSM
20
50
100
200
VCE, COLLECTOR– EMITTER VOLTAGE (V)
T A = 25°CTSTG
CHARACTERISTICS
I C= 200 mA
VF
1.2
I C = ICurrent
Maximum Average Reverse
=
I Cat
= [email protected]
mAA=25℃I C = 100 mA
C
NOTES:
@T A=125℃
IR
0.8
1- Measured0.4
at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0
0.02
0.1
1.0
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
2012-06
2012-
0.4
0.3
15
50
16
18
10
V BE(on) @ V CE = 10 V
60
80
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
1.0
0.2
V CE(sat) @ I C /I B = 10
0.1
30
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
CURRENT (mAdc)
I C , COLLECTOR40
50 70 100
120and “On” Voltages
Figure 2. “Saturation”
-55 to +150
- 65 to +175
–55°C to +125°C
1.2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
0.5
-55 to +125
1.0
TJ
Operating Temperature
Range
2.0
10 mA 20 mA
Rated DC Blocking Voltage
14
40
0.6
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
Typical Junction Capacitance
1)
Figure 1. (Note
Normalized
DC Current Gain CJ
1.6
0.7
C
Storage Temperature Range
13
30
0
10
Typical Thermal Resistance
(Note 2) CURRENT (mAdc)RΘJA
I , COLLECTOR
T A = 25°C
T A = 25°C
Marking Code
1.0
V, VOLTAGE (VOLTS)
Ratings at 25℃ ambient temperature unless otherwise specified.
2.0
Single phase half wave, 60Hz, resistive of inductive load.
V CE = 10 V
1.5
For capacitive
load, derate current by 20%
10
20
1.6
0.50
0.70
0.85
0.9
0.92
0.5
10
2.0
2.4
2.8
0.2
1.0
10
100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
FM120-M+
BC846A/BWT1
THRU
BC847A/B/CWT1
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
BC848A/B/CWT1
SOD-123+ PACKAGE
Pb Free Produc
WILLAS
Package outline
Features
• Batch process design, excellent power dissipation offers
BC847
/ BC848
better reverse leakage current
and thermal
resistance.
• Low profile surface mounted application in order to
SOD-123H
drop.
• High current capability, low forward voltage
T A = 25°C
• High surge capability.
protection.
• Guardring for overvoltage
5.0
C ib
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
3.0
• Lead-free parts meet environmental standards of
7.0
C ob
MIL-STD-19500 /228
RoHS
product
for
packing
code
suffix "G"
•
2.0
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
1.0
Case
Molded plastic,
SOD-123H
• 0.4
0.6: 0.81.0
2.0
4.0 6.0 8.010
20
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
V, VOLTAGE (VOLTS)
optimize board space.
10.0
• Low power loss, high efficiency.
400
300
0.146(3.7)
0.130(3.3)
200
0.071(1.8)
V CE =0.056(1.4)
10V
T A = 25°C
100
80
60
40
30
0.040(1.0)
0.024(0.6)
20
0.5 0.7 1.0
40
• Terminals
terminals,
solderable
V R ,:Plated
REVERSE
VOLTAGE
(VOLTS) per MIL-STD-750
I C , COLLECTOR CURRENT (mAdc)
T A = 25°C
12
20
0.2 RMS Voltage
Maximum
VRMS
VDC
Maximum DC Blocking Voltage
0.2 Forward
1.0 Rectified Current
10
Maximum0.1
Average
I C , COLLECTOR
(mA)
Peak Forward Surge Current
8.3 ms singleCURRENT
half sine-wave
Figure
7. DC
Current
superimposed on rated load
(JEDEC
method)
Gain
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
14
40
14
21
28
V
20
30 0
CJ
T
TAJ= 25°C
50mA
100mA
IR
@T A=125℃
0.4
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
0.2
0.5 1.0
2.0
120
200
@ I35
/I B= 10 42
C
56
70
105
140
100
150
50 100 200
200
50
1.0 2.0
60
80
5.0
1.0 10 20
40
120
–1.0
-55 to +125
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.05 0.1
115
150
NOTES:
0
0.02
10
100
-55 to +150
- 65 to +175
–1.4
200mA
SYMBOL FM120-MH FM130-MH
–1.8 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse
at @T A=25℃
I Current
=
18
80
Figure 8.30
“On” Voltage
VF
Maximum Forward Voltage at 1.0A DC
16
60
I C , COLLECTOR
CURRENT (mA)
TSTG
CHARACTERISTICS
40
0.5
IFSM
Operating Temperature Range
Storage
Temperature Range
1.6
15
50
CE(sat)
0.2
Typical2.0
Junction Capacitance (Note 1)
Rated DC Blocking Voltage10 mA
VBE @ VCE = 5.0 V
13
30
0.2
RΘJA
Typical Thermal Resistance (Note 2)
0.6
IO
100
C
V BE(sat) @ I C /I B = 10
0.4
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VRRM
0.8
V, VOLTAGE (VOLTS)
RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
1.2
50
0.031(0.8) Typ.
0.8
RATINGS
20mA
30
1.0
Marking Code
20
Dimensions in inches and (millimeters)
Ratings
2.0at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
1.0
For capacitive
load, derate current by 20%
0.5
5.0 7.010
Figure 6. Current–Gain – Bandwidth Product
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
θVB , TEMPERATURE COEFFICIENT (mV/°C)
hFE , DC CURRENT GAIN (NORMALIZED)
2.0 3.0
0.031(0.8) Typ.
,
Method5.2026
Figure
Capacitances
V CE = 5V
T AMAXIMUM
= 25°C
0.012(0.3) Typ.
5.0
10
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20
0.50
θ VB for V 0.70
BE
–2.2
0.85
–55°C to 125°C
0.5
0.9
0.92
10
–2.6
–3.0
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
FM120-M+
BC846A/BWT1
THRU
BC847A/B/CWT1
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
BC848A/B/CWT1
SOD-123+ PACKAGE
Pb Free Produc
WILLAS
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
application in order to
• Low profile surface mounted BC846
SOD-123H
10
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
6.0
Mechanical
data
• Epoxy : UL94-V0 rated flameCretardant
4.0
ob
0.146(3.7)
0.130(3.3)
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
C, CAPACITANCE (pF)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
40
• High surge capability.
• Guardring for overvoltage protection. T A= 25°C
• Ultra high-speed switching.
20
• Silicon epitaxial planar chip, metal silicon junction.
C ib
standards of
• Lead-free parts meet environmental
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
2.0
Method
0.5
1.02026
2.0
5.0 10 20
V
,
REVERSE
VOLTAGE
(VOLTS)
Polarity : Indicated
by cathode band
R
0.1 0.2
50
500
0.012(0.3) Typ.
V CE= 5 V
T A= 25°C
0.071(1.8)
0.056(1.4)
200
100
50
0.040(1.0)
0.024(0.6)
20
0.031(0.8) Typ.
1.0
100
0.031(0.8) Typ.
5.0 10
50 100
I C , COLLECTOR CURRENT (mA)
•
Figure: Any
11. Capacitance
• Mounting Position
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Figure 12. Current–Gain – Bandwidth Product
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC846A/BWT1
FM120-M+
THRU
BC847A/B/CWT1
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- BC848A/B/CWT1
200V
General
Purpose
Transistors
SOD-123+ PACKAGE
WILLAS
Pb Free Produc
Package outline
Features
offers
• Batch process design, excellent power dissipation
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
.004(0.10)MIN.
• Low profile surface mounted application in order to
optimize board space.
.054(1.35)
.045(1.15)
• Low power loss, high efficiency.
.087(2.20)
drop.
• High current capability, low forward voltage
• High surge capability.
.070(1.80)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
.056(1.40)
Method 2026
• Polarity : Indicated by cathode
band
.047(1.20)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
.016(0.40)
VRMS
.008(0.20)
VDC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
12
20
14
20
13
30
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
14
40
15
50
16
60
18
80
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
120
200
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
IO
IFSM
RΘJA
115
150
21
1.0
30
Dimensions in inches and (millimeters)
Typical Thermal Resistance (Note 2)
10
100
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
BC846A/BWT1
FM120-M+
THRU
BC847A/B/CWT1
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
BC848A/B/CWT1
SOD-123+ PACKAGE
WILLAS
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low power Device PN 0.130(3.3)
Packing low forward voltage drop.
• High current capability,(1)
‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• HighPart Number G
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single
phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
which may be included on WILLAS data sheets and/ or specifications can VRRM
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
life‐saving implant or other applications intended for life‐sustaining or other related Operating
Temperature Range
TJ
65
to
+175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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