BCW65ALT1(SOT 23)

WILLAS
FM120-M+
BC:$LT1THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
NPN
Silicon
process design, excellent power dissipation offers
• Batch
better reverse leakage current and thermal resistance.
Featrues
SOD-123H
• Low profile surface mounted application in order to
We declare
that
the material
optimize
board
space. of product
compliance
with
RoHS
requirements.
efficiency.
• Low power loss, high
Pb-Free package is available
• High current capability, low forward voltage drop.
RoHS product for packing code suffix ”G”
• High surge capability.
Halogen
free product
for packing code
suffix “H”
for overvoltage
protection.
• Guardring
Moisture Sensitivity Level 1
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• SiliconRATINGS
MAXIMUM
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
Rating
Symbol
Value
• RoHS product for packing code suffix "G"
Collector–Emitter
Voltagefor packing
V CEO
Halogen free product
code suffix "H"32
Collector–Base
Voltagedata
Mechanical
V CBO
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Unit
Vdc
SOT–23
60
Vdc
• Epoxy : UL94-V0
Emitter–Base
Voltage rated flameVretardant
EBO
5.0
Vdc
: Molded
SOD-123H
• Case Current
Collector
—plastic,
Continuous
IC
800
mAdc
,
0.040(1.0)
0.024(0.6)
ry
3
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
• Terminals :Plated terminals, solderable per MIL-STD-750
THERMAL CHARACTERISTICS
1
BASE
Method 2026
im
ina
Pr
el
Characteristic
Symbol
Max
Unit Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Total
Device
Dissipation
FR–
5
Board,
(1)
2
• Mounting Position : Any
PD
225
mW
EMITTER
TA = 25°C
• Weight : Approximated 0.011 gram
1.8
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Total Device Dissipation
300
mW
PD
Ratings at 25℃ ambient temperature unless otherwise specified.
Alumina Substrate, (2) TA = 25°C
Single phase half wave, 60Hz, resistive of inductive load.
2.4
mW/°C
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
FM130-MH
FM140-MH°C
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
RATINGS
Junction and Storage
Temperature
TJ ,FM120-MH
Tstg
–55 to +150
Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
DEVICE MARKING
Maximum RMS Voltage
BCW65ALT1
EA
Maximum
DC Blocking=Voltage
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
Maximum
Average Forward
Rectified Current (T = 25°CIunless
O
ELECTRICAL
CHARACTERISTICS
otherwise noted.)
A
Peak Forward Surge Current
8.3 ms single half sine-wave
Characteristic
Symbol
IFSM
Min
Typ
1.0
30
Max
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Breakdown
TypicalCollector–Emitter
Junction Capacitance
(Note 1) Voltage
Operating
(IC =Temperature
10mAdc, I BRange
=0)
CJ
V (BR)CEO
TJ
Storage Temperature Range
Collector–Emitter Breakdown Voltage
(IC = 10 µAdc,
V EB = 0 )
CHARACTERISTICS
V
Maximum
Reverse
(I E=Average
10 µAdc,
I C = 0)Current at @T A=25℃
Rated DC Blocking Voltage
Collector Cutoff Current
-55 to +125
—
—
@T A=125℃
60
—
—
40
120
Vdc
-55 to +150
- 65 to +175
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
(BR)EBO
IR
0.50
5.0
—
0.70
—
(VCE = 32 Vdc, IE = 0 , TA = 150°C)
2- Thermal Resistance From Junction to Ambient
0.85
0.5
0.9
0.92
Vdc
10
I CES
NOTES:(VCE = 32 Vdc, IE = 0 )
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
32
TSTG
V (BR)CES
Maximum
Forward Voltage
at 1.0AVoltage
DC
Emitter–Base
Breakdown
RΘJA
Typical Thermal Resistance (Note 2)
Unit
—
—
20
nAdc
—
—
20
µAdc
—
—
20
nAdc
Emitter Cutoff Current
(V EB= 4.0 Vdc, I C = 0)
I EBO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:$LT1 THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application
orderotherwise
to
• Low profile
ELECTRICAL
CHARACTERISTICS
(TA = 25°C in
unless
noted) (Continued)
optimize boardCharacteristic
space.
Symbol
Min
• Low power loss, high efficiency.
ON CHARACTERISTICS
• High current capability, low forward voltage drop.
DC Current
hFE
surge Gain
capability.
• High
(
I
=
100
µAdc,
V
=
10
Vdc
)
C
CE
• Guardring for overvoltage protection.
( IC= 10
mAdc, VCE switching.
= 1.0 Vdc )
high-speed
• Ultra
( IC= 100epitaxial
mAdc, Vplanar
Vdc )metal silicon junction.
CE = 1.0chip,
• Silicon
( IC= 500 mAdc,
Vdc )
partsVmeet
environmental
standards of
• Lead-free
CE = 2.0
MIL-STD-19500
/228
Collector–Emitter Saturation
Voltage
Unit
0.012(0.3) Typ.
—
35
75
100
35
—
—
—
—
—
220
250
—
—
—
0.7
0.3
—
—
—
—
2.0
0.071(1.8)
0.056(1.4)
Vdc
Halogen free product for packing code suffix "H"
( IC = 100 mAdc, IB = 10 mAdc )
Mechanical
data
Base–Emitter Saturation Voltage
V
Vdc0.040(1.0)
BE(sat)
fT
(I C = 20mAdc,
V CE =2026
10 Vdc, f = 100 MHz)
Method
0.031(0.8) Typ.
100
—
0.031(0.8) Typ.
—
MHz
C obo
—
Dimensions in inches and (millimeters)
—
12
pF
C ibo
—
—
80
pF
—
—
CHARACTERISTICS
10
dB
im
ina
Output Capacitance
• Polarity
: Indicated by cathode band
(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
• Mounting Position : Any
Input Capacitance
• Weight
: Approximated 0.011 gram
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
0.024(0.6)
ry
: UL94-V0
flame) retardant
• Epoxy
( IC = 500
mAdc, IB rated
= 50 mAdc
SOD-123H
• Case : Molded plastic,
SMSMALL–SIGNAL
CHARACTERISTICS
,
Current–Gain
— Bandwidth
Product
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
C
Max
0.146(3.7)
0.130(3.3)
V CE(sat)
product for packing code suffix "G"
• RoHS
( IC = 500 mAdc, IB = 50 mAdc )
EB
Typ
Noise Figure
NF
MAXIMUM RATINGS AND ELECTRICAL
(V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Ratings at 25℃ ambient temperature unless otherwise specified.
SWITCHING CHARACTERISTICS
Pr
el
Single phase half wave, 60Hz, resistive of inductive load.
Turn–On Time
—
—
100
ns
t on
For capacitive load, derate current by 20%
(I B1= I B2= 15 mAdc)
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-M
SYMBOL FM120-MH
RATINGS
Turn–Off Time
—
—
400
ns
t off
Marking Code
12
13
14
15
16
18
10
115
120
(I C= 150 mAdc, R L = 150 Ω )
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
Ordering
Information
Maximum
RMS Voltage
14
21
28
35
42
56
70
105
140
20
VDC
Device
Marking
Shipping
Maximum Average Forward Rectified Current
IO
BCW65ALT1
EA
3000/Tape&Reel
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
30
40
50
60
80
100
150
200
VRMS
Maximum DC Blocking Voltage
1.0
30
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:$LT1THRU
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-23
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
standards of
• Lead-free parts meet environmental.122(3.10)
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
.110(2.80)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
im
ina
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.080(2.04)
.070(1.78)
RATINGS
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
.020(0.50)
TSTG
.012(0.30)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
1.0
30
.055(1.40)
.035(0.89)
0.031(0.8) Typ.
.083(2.10)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.012(0.3) Typ.
IR
0.50
0.70
0.85
0.9
0.92
0.5
@T A=125℃
Dimensions
in inches and (millimeters)
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:$LT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability, low
(1) forward voltage drop.
BCW65ALT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or A
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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