WILLAS FM120-M+ BAS16LT1 THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface is mounted application in order to ƽ • Pb-Free package available optimize board space. RoHS product for packing code suffix ”G” • Low power loss, high efficiency. freecapability, product for suffix “H” High current lowpacking forwardcode voltage drop. • Halogen ƽ Moisture Sensitivity Level 1 • High surge capability. for overvoltage protection. • Guardring DEVICE MARKING AND ORDERING INFORMATION • Ultra high-speed switching. Device Marking Package Shipping • Silicon epitaxial planar chip, metal silicon junction. SOT-23 Lead-free parts meet A6 environmental standards3000/Tape&Reel of •BAS16LT1 MIL-STD-19500 /228 MAXIMUM RATINGS for packing code suffix "G" • RoHS product Halogen free product for packing code suffix "H" Rating Symbol Value Unit Mechanical data Continuous Reverse Voltage VR 75 • Epoxy : UL94-V0 rated flame retardant Peak Forward Current IF 200 Case : Molded plastic, SOD-123H •Peak Forward Surge Current I FM(surge) 500 , • Terminals :Plated terminals, solderable per MIL-STD-750 Vdc mAdc mAdc SOD-123H 0.146(3.7) 0.130(3.3) 3 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 2 SOT–23 0.040(1.0) 0.024(0.6) 3 CATHODE 1 ANODE 0.031(0.8) Typ. 0.031(0.8) Typ. THERMAL CHARACTERISTICS Method 2026 • Polarity : Characteristic Indicated by cathode band DevicePosition Dissipation FR– 5 Board, (1) Mounting : Any •Total T A = 25°C • Weight : Approximated 0.011 gram Symbol Max Unit Dimensions in inches and (millimeters) PD 225 mW Derate above 25°C 1.8 mW/°C Thermal MAXIMUM Resistance, Junction to Ambient R 556 °C/W θJA RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation P 300 mW D Ratings at 25℃ ambient temperature unless otherwise specified. Alumina Substrate, (2) T A = 25°C Single phase half wave, 60Hz, resistive of inductive load. Derate load, abovederate 25°C current by 20% 2.4 mW/°C For capacitive Thermal Resistance, Junction to Ambient RθJA 417 °C/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Operating/Junction and Storage Temperature –55 to +150 °C TJ , Tstg Marking Code 12 13 14 15 16 18 10 115 120 30noted) 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRMunless20 ELECTRICAL CHARACTERISTICS (T A = 25°C otherwise Maximum RMS Voltage Characteristic Maximum Blocking Voltage OFF DC CHARACTERISTICS VRMS VDC 14 Symbol 21 20 30 28 Min 40 35 50 Max42 60 56 Unit 80 70 105 140 V 100 150 200 V IO 1.0 IR µAdc (V R = 75Vdc) — 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM (V R = 75 Vdc, T J = 150°C) — 50 superimposed on rated load (JEDEC method) (V R = 25 Vdc, T J = 150°C) — 30 40 Typical Thermal Resistance (Note 2) RΘJA Reverse Breakdown Voltage 120 V (BR) 75 — Vdc Typical Junction Capacitance (Note 1) CJ (I BR = 100 µAdc) -55 to +125 -55 to +150 Operating Temperature Range TJ Forward Voltage VF mV - 65 to +175 Storage Temperature Range TSTG (I F = 1.0 mAdc) — 715 (I F = 10 mAdc) — 855 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (I F = 50 mAdc) — 1000 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 (I F = 150 mAdc) — 1250 0.5 Maximum Average Reverse Current at @T A=25℃ IR Diode Capacitance CD — 2.0 pF 10 @T A=125℃ Rated DC Blocking Voltage (V R = 0, f = 1.0 MHz) NOTES: Forward Recovery Voltage V FR –1.75 Vdc mAdc, t r = 20ns ) voltage of 4.0 VDC. (I at 1- Measured 1 10 MHZ and applied reverse F= Timeto Ambient 2- Thermal Reverse ResistanceRecovery From Junction t rr — 6.0 ns (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge QS — 45 pC (I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω) Maximum Reverse Average Forward Rectified Current Voltage Leakage Current A A ℃ U V m 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16LT1THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage 2.0 k current and thermal resistance. SOD-123H 820 Ω surface mounted application in order to • Low +10 profile V optimize board space. 0.1µF • Low power loss, high efficiency. IF 100 µH low forward voltage drop. • High current capability, • High surge capability. • Guardring for overvoltage protection. µF D.U.T. switching. • Ultra high-speed0.1 50 Ω OUTPUT Ω INPUT epitaxial planar chip, metal silicon50 junction. • Silicon PULSE SAMPLING parts meet environmental standards of • Lead-free GENERATOR OSCILLOSCOPE tp tr IF t 0.146(3.7) 0.130(3.3) 10% 90% t 0.012(0.3) Typ. 0.071(1.8) i R(REC) = 1.0 mA 0.056(1.4) OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) IR V R INPUT SIGNAL t rr MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I Notes: 2. retardant Input pulse is adjusted so I R(peak) is equal to 10 mA. flame • Epoxy : UL94-V0 rated Notes: 3. t p » t rr • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Figure 1. Recovery Time Equivalent • Terminals :Plated terminals, solderable per MIL-STD-750 Test Circuit ) of 10 mA. F 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 A T A = 150°C T A = 125°C 1.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 10 TA= – 40°C Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 T A= 25°C RATINGS 0.1 0.2 0.4 Maximum DC Blocking Voltage 0.6 12 20 VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage T A = 85°C 0.1 T A = 55°C SYMBOL FM120-MH FM130-MH 0.01FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Dimensions in inches and (millimeters) 10 I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) • Polarity : Indicated by cathode band 100 • Mounting Position : Any • Weight : Approximated 0.011 gram T = 85°C 0.8 VRMS 14 VDC 20 1.0 1.2 13 30 21 14 40 0.001 0 30 15 50 28 Storage Temperature Range C D , DIODE CAPACITANCE (pF) Operating Temperature Range NOTES: 70 80 100 40 115 150 120 200 Vo 105 140 Vo 150 200 Vo 50 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG 0.64 30 40 120 -55 to +125 TJ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF 0.60 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 56 20 CJ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 42 60 RΘJA 0.68 35 50 A 10 100 V R , REVERSE 1.0 VOLTAGE (VOLTS) Figure 3. Leakage Current 30 superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) 18 80 10 40 V F Rectified , FORWARD VOLTAGE (VOLTS) Maximum Average Forward Current IO Figure 2. Forward Voltage Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Typical Thermal Resistance (Note 2) 16 T60= 25°C @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 0.56 Vo mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16LT1 THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. SOT-23 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .122(3.10) .063(1.60) .047(1.20) 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant .106(2.70) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS.070(1.78) .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range .020(0.50) TSTG .012(0.30) Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T Dimensions A=25℃ Rated DC Blocking Voltage 40 120 -55 to +125 A A ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 1.0 30 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .083(2.10) .110(2.80) Dimensions in inches and (millimeters) @T A=125℃ IR 0.50 in inches and (millimeters) 0.70 0.85 0.9 0.92 0.5 10 V mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16LT1THRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE FeaturesInformation: Ordering • Batch process design, excellent power dissipation offers better reverse Device PN leakage current and thermal resistance. application in order to • Low profile surface mounted (1) BAS16LT1 optimize board space. G ‐WS Package outline Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) power loss, high efficiency. • Low(1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” Note: 0.130(3.3) • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. ***Disclaimer*** Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band WILLAS reserves the right to make changes without notice to any product • Mounting Position : Any specification herein, to make corrections, modifications, enhancements or other • Weight : Approximated 0.011 gram changes. WILLAS or anyone on its behalf assumes no responsibility or liability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS for any errors or inaccuracies. Data sheet specifications and its information Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. contained are intended to provide a product description only. "Typical" parameters For capacitive load, derate current by 20% which may be included on WILLAS data sheets and/ or specifications can SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS and do vary in different applications and actual performance may vary over time. Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum WILLAS does not assume any liability arising out of the application or Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS use of any product or circuit. VDC Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 Am Maximum Average Forward Rectified Current IO 1.0 WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) life‐saving implant or other applications intended for life‐sustaining or other related ℃/ 40 Typical Thermal Resistance (Note 2) RΘJA applications where a failure or malfunction of component or circuitry may directly PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating or indirectly cause injury or threaten a life without expressed written approval Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ of WILLAS. Customers using or selling WILLAS components for use in CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN such applications do so at their own risk and shall agree to fully indemnify WILLAS Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Inc and its subsidiaries harmless against all claims, damages and expenditures . 0.5 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.