BAS16LT1(SOT 23)

WILLAS
FM120-M+
BAS16LT1 THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile
surface is
mounted
application in order to
ƽ • Pb-Free
package
available
optimize board space.
RoHS product for packing code suffix ”G”
• Low power loss, high efficiency.
freecapability,
product for
suffix
“H”
High current
lowpacking
forwardcode
voltage
drop.
• Halogen
ƽ Moisture Sensitivity Level 1
• High surge capability.
for overvoltage
protection.
• Guardring
DEVICE
MARKING
AND ORDERING
INFORMATION
• Ultra high-speed switching.
Device
Marking
Package
Shipping
• Silicon epitaxial planar chip, metal silicon junction.
SOT-23
Lead-free parts meet A6
environmental
standards3000/Tape&Reel
of
•BAS16LT1
MIL-STD-19500 /228
MAXIMUM
RATINGS
for packing code suffix "G"
• RoHS product
Halogen free product for packing code suffix "H"
Rating
Symbol
Value
Unit
Mechanical data
Continuous Reverse Voltage
VR
75
• Epoxy : UL94-V0 rated flame retardant
Peak Forward Current
IF
200
Case
: Molded
plastic,
SOD-123H
•Peak
Forward
Surge
Current
I FM(surge)
500
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Vdc
mAdc
mAdc
SOD-123H
0.146(3.7)
0.130(3.3)
3
0.012(0.3) Typ.
1
0.071(1.8)
0.056(1.4)
2
SOT–23
0.040(1.0)
0.024(0.6)
3
CATHODE
1
ANODE
0.031(0.8) Typ.
0.031(0.8) Typ.
THERMAL CHARACTERISTICS
Method 2026
• Polarity : Characteristic
Indicated by cathode band
DevicePosition
Dissipation
FR– 5 Board, (1)
Mounting
: Any
•Total
T
A = 25°C
• Weight : Approximated 0.011 gram
Symbol
Max
Unit Dimensions in inches and (millimeters)
PD
225
mW
Derate above 25°C
1.8
mW/°C
Thermal MAXIMUM
Resistance, Junction
to
Ambient
R
556
°C/W
θJA
RATINGS AND ELECTRICAL CHARACTERISTICS
Total
Device
Dissipation
P
300
mW
D
Ratings at 25℃ ambient temperature unless otherwise specified.
Alumina
Substrate,
(2)
T
A = 25°C
Single phase half wave, 60Hz, resistive of inductive load.
Derate load,
abovederate
25°C current by 20%
2.4
mW/°C
For capacitive
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Operating/Junction and Storage Temperature
–55 to +150
°C
TJ , Tstg
Marking Code
12
13
14
15
16
18
10
115
120
30noted) 40
50
60
80
100
150
200
Maximum
Recurrent Peak
Reverse Voltage
V
VRRMunless20
ELECTRICAL
CHARACTERISTICS
(T A = 25°C
otherwise
Maximum RMS Voltage Characteristic
Maximum
Blocking Voltage
OFF DC
CHARACTERISTICS
VRMS
VDC
14
Symbol 21
20
30
28
Min
40
35
50
Max42
60
56
Unit
80
70
105
140
V
100
150
200
V
IO
1.0
IR
µAdc
(V R = 75Vdc)
—
1.0 Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
(V R = 75 Vdc, T J = 150°C)
—
50
superimposed on rated load (JEDEC method)
(V R = 25 Vdc, T J = 150°C)
—
30
40
Typical Thermal Resistance (Note 2)
RΘJA
Reverse Breakdown Voltage
120
V (BR)
75
—
Vdc
Typical Junction Capacitance (Note 1)
CJ
(I BR = 100 µAdc)
-55 to +125
-55 to +150
Operating Temperature Range
TJ
Forward Voltage
VF
mV
- 65 to +175
Storage Temperature Range
TSTG
(I F = 1.0 mAdc)
—
715
(I F = 10 mAdc)
—
855
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(I F = 50 mAdc)
—
1000
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
(I F = 150 mAdc)
—
1250
0.5
Maximum Average Reverse Current at @T A=25℃
IR
Diode Capacitance
CD
—
2.0
pF
10
@T A=125℃
Rated DC Blocking Voltage
(V R = 0, f = 1.0 MHz)
NOTES: Forward Recovery Voltage
V FR
–1.75
Vdc
mAdc,
t r = 20ns
) voltage of 4.0 VDC.
(I at
1- Measured
1 10
MHZ
and applied
reverse
F=
Timeto Ambient
2- Thermal Reverse
ResistanceRecovery
From Junction
t rr
—
6.0
ns
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
QS
—
45
pC
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)
Maximum Reverse
Average Forward
Rectified Current
Voltage Leakage
Current
A
A
℃
U
V
m
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS16LT1THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage
2.0 k current and thermal resistance.
SOD-123H
820
Ω
surface
mounted application in order to
• Low
+10 profile
V
optimize board space.
0.1µF
• Low power loss, high efficiency.
IF
100 µH
low forward
voltage drop.
• High current capability,
• High surge capability.
• Guardring for overvoltage protection.
µF
D.U.T.
switching.
• Ultra high-speed0.1
50 Ω OUTPUT
Ω INPUT
epitaxial planar chip, metal silicon50
junction.
• Silicon
PULSE
SAMPLING
parts meet environmental standards
of
• Lead-free
GENERATOR
OSCILLOSCOPE
tp
tr
IF
t
0.146(3.7)
0.130(3.3)
10%
90%
t
0.012(0.3) Typ.
0.071(1.8)
i R(REC) = 1.0 mA
0.056(1.4)
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
IR
V R INPUT SIGNAL
t rr
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
Notes:
2. retardant
Input pulse is adjusted so I R(peak) is equal to 10 mA.
flame
• Epoxy : UL94-V0 rated
Notes:
3.
t p » t rr
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Figure 1. Recovery Time Equivalent
• Terminals :Plated terminals, solderable per MIL-STD-750 Test Circuit
) of 10 mA.
F
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
A
T A = 150°C
T A = 125°C
1.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
10
TA= – 40°C
Ratings at 25℃ ambient temperature unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
T A= 25°C
RATINGS
0.1
0.2
0.4
Maximum DC Blocking Voltage
0.6
12
20
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
T A = 85°C
0.1
T A = 55°C
SYMBOL FM120-MH FM130-MH
0.01FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Dimensions in inches and (millimeters)
10
I R , REVERSE CURRENT (µA)
I F , FORWARD CURRENT (mA)
• Polarity : Indicated by cathode band
100
• Mounting Position : Any
• Weight : Approximated
0.011 gram
T = 85°C
0.8
VRMS
14
VDC
20
1.0
1.2
13
30
21
14
40
0.001
0
30
15
50
28
Storage Temperature Range
C D , DIODE CAPACITANCE (pF)
Operating Temperature Range
NOTES:
70
80
100
40
115
150
120
200
Vo
105
140
Vo
150
200
Vo
50
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
0.64
30
40
120
-55 to +125
TJ
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.60
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
56
20
CJ
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
42
60
RΘJA
0.68
35
50
A
10
100
V R , REVERSE
1.0 VOLTAGE (VOLTS)
Figure 3. Leakage Current
30
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
18
80
10
40
V F Rectified
, FORWARD
VOLTAGE (VOLTS)
Maximum Average Forward
Current
IO
Figure 2. Forward Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Typical Thermal Resistance (Note 2)
16
T60= 25°C
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
0.56
Vo
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS16LT1 THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
SOT-23
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.122(3.10)
.063(1.60)
.047(1.20)
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS.070(1.78)
.008(0.20)
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
.020(0.50)
TSTG
.012(0.30)
Storage Temperature Range
CHARACTERISTICS
Maximum Average Reverse Current at @T Dimensions
A=25℃
Rated DC Blocking Voltage
40
120
-55 to +125
A
A
℃
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
1.0
30
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current
by 20%
.080(2.04)
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
@T A=125℃
IR
0.50
in inches and (millimeters)
0.70
0.85
0.9
0.92
0.5
10
V
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS16LT1THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
FeaturesInformation: Ordering
• Batch process design, excellent power dissipation offers
better reverse Device PN leakage current and thermal resistance.
application in order to
• Low profile surface mounted
(1)
BAS16LT1
optimize board
space.
G ‐WS Package outline
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
power loss, high efficiency.
• Low(1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” Note:
0.130(3.3)
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra
high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
***Disclaimer*** Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
WILLAS reserves the right to make changes without notice to any product • Mounting Position : Any
specification herein, to make corrections, modifications, enhancements or other • Weight
: Approximated 0.011 gram
changes. WILLAS or anyone on its behalf assumes no responsibility or liability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
for any errors or inaccuracies. Data sheet specifications and its information Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
contained are intended to provide a product description only. "Typical" parameters For
capacitive
load, derate current by 20%
which may be included on WILLAS data sheets and/ or specifications can SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
and do vary in different applications and actual performance may vary over time. Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum WILLAS does not assume any liability arising out of the application or Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
use of any product or circuit. VDC
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed on rated load (JEDEC method)
life‐saving implant or other applications intended for life‐sustaining or other related ℃/
40
Typical Thermal Resistance (Note 2)
RΘJA
applications where a failure or malfunction of component or circuitry may directly PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating or indirectly cause injury or threaten a life without expressed written approval Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
of WILLAS. Customers using or selling WILLAS components for use in CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
such applications do so at their own risk and shall agree to fully indemnify WILLAS Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 0.5
Maximum Average
Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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