BC807 40WT1(SOT 323)

WILLAS
FM120-M+
BC807-40WT1
THRU
FM1200-M+
General
Purpose
Transistors
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
PNP
Silicon
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
RoHS
for packing code suffix "G"
current capability, low forward voltage drop.
• Highproduct
Halogen
freecapability.
product for packing code suffix "H"
• High surge
Moisture
Sensitivity
Level
1
for overvoltage
protection.
• Guardring
• Ultra high-speed switching.
DEVICE MARKING AND ORDERING INFORMATION
• Silicon epitaxial planar chip, metal silicon junction.
Marking
Package
Lead-free parts meet
environmental
standards ofShipping
•Device
z
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
SOT–323
code suffix "G"
• RoHS product for packing
BC807-40WT1
SOT-323
YL
Halogen free product for packing code suffix "H"
3000/Tape&Reel
Mechanical data
MAXIMUM RATINGS
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
• Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V CEO
–45
V,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector–BaseMethod
Voltage 2026
V CBO
–50
V
Emitter–Base
Voltage by cathode
V EBO
• Polarity : Indicated
band
–5.0
V
Position
: Any
• Mounting
Collector
Current
— Continuous
IC
• Weight : Approximated 0.011 gram
–500
mAdc
3
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
THERMAL CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Ratings at 25℃ ambient temperature unless otherwise specified.
Total Device Dissipation FR– 5 Board, (1)
PD
Single phase half wave, 60Hz, resistive of inductive load.
TA = 25°C
For capacitive load, derate current by 20%
Derate above 25°C
RATINGS
Thermal Resistance,
Junction to Ambient
225
1.8
mW
mW/°C
VRRM
R θJA
P D 12
20
VRMS
14
556
13
30
300
212.4
30417
°C/W
15
50
mW
28 mW/°C
35
40 °C/W50
14
40
VDC R θJA 20
IO T J , T stg
–55 to +150
(TA = 25°C unless otherwise noted.)
ELECTRICAL
CHARACTERISTICS
Peak
Forward Surge Current
8.3 ms single half sine-wave
IFSM
superimposed on rated load (JEDEC method)
Characteristic
Typical Thermal Resistance (Note 2)
Symbol
RΘJA
OFFJunction
CHARACTERISTICS
Typical
Capacitance (Note 1)
CJ
Operating
Temperature Range
Collector–Emitter
Breakdown Voltage
TJ
Storage Temperature Range
(IC = –10 mA)
Collector–Emitter
Breakdown Voltage
CHARACTERISTICS
10
100
115
150
120
200
42
56
70
105
140
80
100
150
200
60
1.0
30
Typ
Max
40
120
–45
18
80
Unit
-55 to +150
-—
65 to +175V
—
IR
V (BR)CES
–50
0.50
—
0.70
—
V
— 10
(VCB = –20 V)
—
—
–100
nA
(VCB = –20 V, T J = 150°C)
—
—
–5.0
µA
@T A=125℃
NOTES:Collector Cutoff Current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.9
0.92
—
(IE = –1.0 µA)
0.85
0.5
–5.0
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
Average Reverse
Current
at @T A=25℃
Emitter–Base
Breakdown
Voltage
Min
16
60
°C
-55 to +125
TSTGV (BR)CEO
VF
Maximum
at 1.0A DC
(VEBForward
= 0, I CVoltage
= –10µA)
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Total Device Dissipation
Maximum Recurrent Peak Reverse Voltage
Alumina Substrate, (2) TA = 25°C
Maximum
RMSabove
Voltage
Derate
25°C
Maximum
DC Blocking
Voltage
Thermal
Resistance,
Junction to Ambient
Junction
and
Storage
Temperature
Maximum
Average
Forward
Rectified
Current
Max
V (BR)EBO
V
I CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC807-40WT1
THRU
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage current and
resistance.
ELECTRICAL
CHARACTERISTICS
(TAthermal
= 25°C unless
otherwise noted) (Continued)
SOD-123H
• Low profile surface mounted application in order to
optimize board Characteristic
space.
Symbol
• Low power loss, high efficiency.
High current capability, low forward voltage drop.
ON •CHARACTERISTICS
• High surge capability.
DC Current Gain
• Guardring for overvoltage protection.
(IC= –100 mA, VCE = –1.0 V)
high-speed switching.
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
(IC = –500 mA, VCE = –1.0 V)
parts meet environmental standards of
• Lead-free
Min
Typ
Max
Unit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
h FE
—
250
—
600
40
—
—
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
product for packing code suffix "G"
• RoHS
Collector–Emitter Saturation Voltage
V CE(sat)
Halogen free product for packing code suffix "H"
(I = –500 mA, I = –50 mA)
Mechanical
data
C
—
—
–0.7
—
—
–1.2
V
B
Base–Emitter
On Voltage
: UL94-V0
rated flame retardant
• Epoxy
V BE(on)
mA, Vplastic,
CE= –1.0 V)
(IC = –500
: Molded
SOD-123H
• Case
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
V
0.031(0.8) Typ.
0.031(0.8) Typ.
SMALL–SIGNAL
CHARACTERISTICS
Method 2026
Current–Gain
— Bandwidth
Product
• Polarity
: Indicated
by cathode
band
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
• Mounting Position : Any
Output Capacitance
• Weight
: Approximated 0.011 gram
in inches and (millimeters)
100 Dimensions—
—
MHz
fT
—
C obo
(VCB = –10 V, f = 1.0 MHz)
10
—
pF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC807-40WT1THRU
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
SOT−323
offers
• Batch process design, excellent power dissipation
better reverse leakage current and thermal resistance.
SOD-123H
.004(0.10)MIN.
• Low profile surface mounted application in order to
optimize board space.
.054(1.35)
.045(1.15)
• Low power loss, high efficiency.
voltage drop.
• High current capability, low forward.087(2.20)
• High surge capability.
.070(1.80)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Method .056(1.40)
2026
• Polarity : Indicated.047(1.20)
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
.016(0.40)
VRMS
.008(0.20)VDC
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
12
20
14
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half
wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
1.0
30
IFSM
Dimensions in inches and (millimeters)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
BC807-40WT1THRU
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(1)
surge capability. ‐WS • HighBC807-40WT1 G
Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single
phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
V
RRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum
Average Forward Rectified Current
IO
1.0
Peak use of any product or circuit. Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature
Range
T
J
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage
NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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