MMBD3004A(SOT 23)

WILLAS
FM120-M+
MMBD3004A THRU
HIGH VOLTAGE SURFACE MOUNT
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SWITCHING DIODE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
• FEATURE
SOD-123H
• Low power loss, high efficiency.
Conductance
·High
z current
capability, low forward voltage drop.
• High
capability.
• High
·High
Breakdown Voltage Rating
z surgeReverse
for overvoltage
protection.
• Guardring
that the material
of product
z We declare
with RoHS requirements.
high-speed switching.
• Ultra compliance
Level
1 junction.
epitaxial Sensitivity
planar chip, metal
silicon
• Silicon
z Moisture
partsInformation(Pb-free)
meet environmental standards of
• Lead-free
Ordering
0.146(3.7)
0.130(3.3)
optimize
board
space.Speed
z
·Fast
Switching
3
MIL-STD-19500 /228
for packing code
suffix "G"
Device
Marking
• RoHS product
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
SOT –23
Shipping
Halogen free product for packing code suffix "H"
KAD
MMBD3004A
Mechanical data
3000/Tape&Reel
Pb-Free package is available
• Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
0.040(1.0)
0.024(0.6)
: Molded plastic, SOD-123H
• Case
Halogen free product for packing code suffix “H”
,
• Terminals :Plated terminals, solderable per MIL-STD-750
ANODE
3
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Maximum
Ratings
@ TA=25℃ unless otherwise specified
Position
: Any
• Mounting
Characteristic
Symbol
• Weight : Approximated
0.011 gram
Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
RATINGS
Forward Continuous
Marking Code
Current(Note 2)
Value
Unit
350
V
300
V
212
V
Non-Repetitive
Peak
Maximum RMS
Voltage
VR(RMS)
12
20
VRRM
Forward Surge Current
14
VRMS @t=1.0µs
20
VDC @t=1.0s
Maximum DC Blocking Voltage
VR
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
IF
225
mA
Peak Repetitive Forward Current(Note 2)
Maximum Recurrent Peak Reverse Voltage
13
IFRM
30
14
40
15
50
62560
16
18
80
mA
100
10
115
150
120
200
28
35
4.0 42
Vo
21
56
70
105
140
Vo
30
40
50
1.0 60
80
100
150
200
Vo
IFSM
IO
Peak ForwardThermal
Surge Current
8.3 ms single
half to
sine-wave
Resistance
Junction
Ambient Air(Note
2)
IFSM
Pd
350
R0JA
357
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Maximum Average
Rectified Current
Power Forward
Dissipation(Note
2)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
to +125 specified, per element
Electrical Characteristics @ TAT=25℃
unless-55otherwise
J
Operating Temperature Range
Storage Temperature RangeCharacteristic
ReverseCHARACTERISTICS
Breakdown Voltage(Note 1)
TSTGSymbol
Min
V(BR)R
350
Maximum Average
Reverse
Current at1) @T A=25℃
Forward
Voltage(Note
Rated DC Blocking Voltage
@T A=125℃
Reverse
Current(Note
1) voltage of 4.0 VDC.
1- Measured at
1 MHZ and
applied reverse
2- Thermal Resistance From Junction to Ambient
℃/W
Am
℃
℃/
P
-55 to +150
℃
Unit- 65 to +175
Test Condition
V
0.50
0.78
IR
VF
NOTES:
MAX
Am
mW
℃
IR=100µA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Typ
A
1.0
30
40
120
CJ
Typical Junction Capacitance (Note 1)
CATHODE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
1
CATHODE
Method 2026
Ratings at 25℃ ambient temperature unless otherwise specified.
DChalf
Blocking
Voltage
Single phase
wave, 60Hz,
resistive of inductive load.
For capacitive
load,
derate
current
RMS Reverse Voltage by 20%
0.031(0.8) Typ.
IR
Total Capacitance
CT
Reverse Recovery Time
Trr
0.87
0.70
V
IF=20mA 0.85
I0.5
F=100mA
0.93
1.0
1.03
1.25
30
100
nA
VR=240V
35
100
µA
VR=240V, Tj=150℃
1.0
5.0
Pf
VR=0V, f=1.0MHZ
50
ns
0.9
0.92
Vo
10
mA
IF=200mA
IF=IR=30mA
Irr=3.0mA, RL=100Ω
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD3004A THRU
HIGH VOLTAGE SURFACE MOUNT
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SWITCHING DIODE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
better reverse leakage current and thermal resistance.
500
• Low profile surface mounted application in order to
optimize board space.
Pd, POWER DISSIPATION (mW)
• Low power loss, high efficiency.
High current capability, low forward voltage drop.
•400
• High surge capability.
• Guardring for overvoltage protection.
Ultra high-speed switching.
•300
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
200
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
100
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0
• Terminals
:Plated terminals, solderable per MIL-STD-750
0
100
Method 2026
TA, AMBIENT TEMPERATURE, (°C)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
• Batch process design, excellent power dissipation offers
Tj = 75°C
10
0.071(1.8)
0.056(1.4)
Tj = 25°C
1.0
0.1
0.040(1.0)
0.024(0.6)
0.01
0.031(0.8) Typ.
0
0.031(0.8) Typ.
400
1600
1200
800
2000
1.1
CHARACTERISTICS
CT, TOTAL CAPACITANCE (pF)
RATINGS
0.012(0.3) Typ.
Tj = 150°C
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
inches and (millimeters)
Fig. 2 TypicalDimensions
Forward in
Characteristics,
per element
Tj = 150°CAND ELECTRICAL
MAXIMUM RATINGS
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
10
For capacitive load, derate current by 20%
1.0
0.146(3.7)
0.130(3.3)
100
200
• PolarityFig.
: Indicated
cathode
band
1 Power by
Derating
Curve,
total package
• Mounting Position : Any
1000
• Weight : Approximated 0.011 gram
SOD-123H
1000
1.0
SYMBOL FM120-MH FM130-MH
0.9FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum0.1
RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
0.01
Maximum
Average Forward Rectified Current
IO
IFSM
Tj = 25°C
Peak Forward Surge Current 8.3 ms single half sine-wave
0.001
superimposed on rated load (JEDEC method)
0
100
150
300 350
RΘJA
VRCapacitance
, INSTANTANEOUS
Typical Junction
(Note 1) REVERSE VOLTAGE
CJ (V)
Fig.
3
Typical
Reverse
Characteristics,
per
Operating Temperature Range
TJelement
50
200
Typical Thermal Resistance (Note 2)
250
Storage Temperature Range
0.8
1.0
30
0.7
0.01
0.1
Am
10
1.0
Am
100
℃
40 VOLTAGE (V)
VR, REVERSE
120Total Capacitance
Fig. 4 Typical
vs. Reverse
element
Voltage, per -55
to +150
-55 to +125
P
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD3004A THRU
HIGH VOLTAGE SURFACE MOUNT
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SWITCHING DIODE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.106(2.70)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.110(2.80)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.083(2.10)
.063(1.60)
.047(1.20)
Halogen free product for packing code suffix
"H"
.122(3.10)
Mechanical data
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
.008(0.20)
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.020(0.50)
TJ
TSTG
.012(0.30)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
Dimensions in inches and (millimeters)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz,
resistive of inductive load.
.080(2.04)
For capacitive load, derate current
by 20%
.070(1.78)
@T A=125℃
IR
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD3004A THRU
HIGH VOLTAGE SURFACE MOUNT
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SWITCHING DIODE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
high efficiency. • Low power loss,
Ordering
Information:
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
Device PN Packing • High surge capability.
(1)
(2)
for
overvoltage
protection.
• Guardring
MMBD3004A‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Ultra high-speed switching.
Note: (1)
Packing code, Tape&Reel Packing
planar chip, metal silicon junction.
• Silicon epitaxial
parts meet environmental standards of
• Lead-free
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
WILLAS reserves the right to make changes without notice to any product For capacitive load, derate current by 20%
specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
changes. WILLAS or anyone on its behalf assumes no responsibility or liability 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
VRRM
for any errors or inaccuracies. Data sheet specifications and its information Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volt
Maximum contained are intended to provide a product description only. "Typical" parameters DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximum which may be included on WILLAS data sheets and/ or specifications can Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave
and do vary in different applications and actual performance may vary over time. 30
IFSM
Am
superimposed on rated load (JEDEC method)
WILLAS does not assume any liability arising out of the application or ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction
Capacitance
(Note
1)
C
J
use of any product or circuit. -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Volt
0.9
Maximum life‐saving implant or other applications intended for life‐sustaining or other related Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum applications where a failure or malfunction of component or circuitry may directly Average Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
or indirectly cause injury or threaten a life without expressed written approval NOTES:
of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal such applications do so at their own risk and shall agree to fully indemnify WILLAS Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.