BAW56DW(SOT 363)

WILLAS
FM120-M+
THRU
BAW56DW
FM1200-M+
SOT-363
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiode
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SWITCHING
DIODE
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z
Fast
Switching
Speed
optimize
board space.
Low power loss,
high efficiency.
• Ultra-Small
z
Surface
Mount Package
• High current capability, low forward voltage drop.
z • For
Purpose Switching Applications
HighGeneral
surge capability.
Guardring
for overvoltage protection.
z • High
Conductance
Ultra high-speed switching.
z • Pb-Free
package is available
• Silicon epitaxial planar chip, metal silicon junction.
product
for packing
code suffix
”G” of
Lead-free
parts meet
environmental
standards
• RoHS
z
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500
/228 for packing code suffix “H”
Halogen
free product
• RoHS product for packing code suffix "G"
Moisture Sensitivity Level 1
Halogen free product for packing code suffix "H"
Mechanical data
MAKING: KJC
: UL94-V0 rated flame retardant
• Epoxy
Maximum
Ratings
@TA=25℃
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals,
solderable per MIL-STD-750
Parameter
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
Method 2026
Peak Repetitive Peak
reverse voltage
•
Polarity
:
Indicated
by cathode band
Working Peak Reverse Voltage
DC Blocking
Position : Any
• MountingVoltage
VRRM
VRWM
VR
• Weight
: Approximated
Forward
Continuous
Current0.011 gram
Limits
Dimensions in75
inches and (millimeters)
V
IFM
IO
Average Rectified
Output RATINGS
Current
MAXIMUM
AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient
temperature
unless
otherwise specified.@ t = 1.0µs
Non-Repetitive
Peak Forward
Surge
Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Power Dissipation RATINGS
Marking
Code
Thermal
Resistance
12
20
13
30
14
40
RθJA15
Maximum RMS Voltage
VRMS
14
21
28
TJ 35
Maximum
Blocking Voltage
Storage DC
temperature
VDC
20
30
40 TSTG50
superimposed on rated load (JEDEC method)
Typical ThermalParameter
Resistance (Note 2)
CJ
Reverse
breakdown
voltage
Operating
Temperature
Range
TVJ (BR) R
Storage Temperature Range
TSTG
Reverse voltage leakage current
CHARACTERISTICS
IR
70 ℃
60-55-15080
100 ℃
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IR V
F
NOTES:
1- Junction
Measured at capacitance
1 MHZ and applied reverse voltage of 4.0 VDC.
CT
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
conditions
150
Vol
105
140
Vol
150
200
Vol
Am
Am
MAX
120
75
-55 to +150
- 65 to +175
VR=75V
120
200
1.0
30
MIN
40
to +125
IR=-55
2.5µA
115
150
UNIT
℃/W
PF
2.5
V
℃
℃
µA
0.025
VRFM130-MH
=20V FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH
VF
Maximum Forward Voltage at 1.0A DC
Test
10℃/W
100
56
42
IFSM
RSymbol
ΘJA
Typical Junction Capacitance (Note 1)
Reveres recovery time
mW
16 625 18
60
80
50
IO
Maximum Average Forward Rectified Current
A
200
VRRM
Junction to Ambient Air
Forward voltage
mA
1
P
Maximum Recurrent Peak Reverse Voltage
Rated DC Blocking Voltage
150
2
ELECTRICAL
CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
mA
D
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Operating Junction Temperature
300
IFSM
@ t = 1.0s
Unit
trr
IF=1mA 0.50
IF=10mA
IF=50mA
IF=150mA
VR=0, f=1MHz
IF=IR=10mA,Irr=0.1×IR,
RL=100Ω
0.70
0.5
10
0.85
715
855
1000
1250
0.9
0.92
Vol
mV
2
pF
4
nS
mAm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAW56DW
FM1200-M+
SOT-363
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiode
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAW56DW
THRU
FM1200-M+
SOT-363
Plastic-Encapsulate Diode
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-363
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.087(2.20)
Mechanical data
0.012(0.3) Typ.
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.071(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.071(1.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.030(0.75)
.021(0.55)
RATINGS
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
.010(0.25)
18
10
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
20
13
30
14
40
15
50
16
60
80
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
.056(1.40)
.047(1.20)
Maximum Average Forward Rectified
Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.016(0.40)
IR
.004(0.10)
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.9
0.92
0.5
10
Vo
mA
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAW56DW
FM1200-M+
SOT-363
Plastic-Encapsulate
Diode -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Product
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
Low profile surface
mounted application in order to
•Ordering
Information:
optimize board space.
Packing 0.146(3.7)
high efficiency.
• Low power loss, Device PN 0.130(3.3)
(1) forward
(2)
capability,
low
voltage
drop.
• High current
BAW56DW‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability.
Packing code, Tape&Reel Packing
Guardring
for overvoltage protection.
•Note: (1)
high-speed switching.
• Ultra(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
data
Mechanical
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at specification herein, to make corrections, modifications, enhancements or other 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
Volts
Maximum DC
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Amp
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
Amp
use of any product or circuit. IFSM
superimposed on rated load (JEDEC method)
℃/W
Resistance (Note 2)
40
Typical Thermal
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
. 1- Measured Inc and its subsidiaries harmless against all claims, damages and expenditures
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Marking Code
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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