BC85xxWT1(SOT 323)

WILLAS
Low VF Chip Schottky Barrier Diodes
BC856A/BWT1
BC857A/B/CWT1
1.0A Surface Mount Schottky Barrier
Rectifiers
- 20V-40V
General
Purpose TransistorsPackage outline
BC858A/B/CWT1
SL12-N THRU SL14-N
Features
• Batch process design, excellent power dissipation offers
SOD-323-L
better reverse leakage current and thermal resistance.
surface mounted application in order to
• Low profile
PNP
Silicon
optimize board space.
0.106 (2.7)
0.091 (2.3)
These
transistors
areefficiency.
designed for general purpose
power
loss, high
• Low
applications.
Theyvery
are housed
in the SOT–323
High current
capability,
low forward
voltage drop.
• amplifier
High surge
capability.
• which
is designed
for low power surface mount applications.
Guardring for overvoltage protection.
•Features
Sensitivity
1
y• Moisture
Very tiny plastic
SMD Level
package.
suited for automatic
Ultra high-speed
switching. insertion
y• Ideally
y• For
Switching
and
AF Amplifier
Applications
Silicon
epitaxial
planar
chip, metal
silicon junction.
RoHS
product
for
packing
code
suffix
"G"
•
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
SOT– 323
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
Mechanical data
•
•
•
Rating
Symbol
BC856
BC857
Epoxy : UL94-V0 rated flame retardant
–65
–45
Collector–Emitter Voltage
V CEO
Case : Molded plastic, SOD-323-L
Collector–Base Voltage
V CBO
–80
–50
Terminals :Plated terminals, solderable per MIL-STD-750,
–5.0
–5.0
Emitter–Base
Voltage
V EBO
Method
2026
• Polarity
cathode band
Collector: Indicated
Current — by
Continuous
IC
• Mounting Position : Any
• Weight : Approximated
0.008 gram
THERMAL
CHARACTERISTICS
–100
Characteristic
BC858
–100
–30
3
COLLECTOR
V
0.016(0.4) Typ.
0.016(0.4) Typ.
1
BASE
–30
V
–5.0
V Dimensions in inches and (millimeters)
–100
Symbol
0.047 (1.2)
0.031 (0.8)
Unit
2
EMITTER
mAdc
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
Maximum
ratings (AT T A=25 oC unless otherwise noted)
TA = 25°C
mW
ThermalPARAMETER
Resistance, Junction to Ambient
Junction and Storage Temperature
Forward rectified current
See Fig.2
Forward surge current
DEVICE MARKING
R θJA
833
CONDITIONS
T J , T stg
–55 to +150
°C/W
°C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R BC857AWT1
= V RRM T J = =25
BC856AWT1
= 3A; BC856BWT1 = 3B;
3E;C BC857BWT1 = 3F;
Reverse
current
O
BC858BWT1=
3K; BC858CWT1 = 3L
BC857CWT1=
3G; BC858AWT1 = 3J;
Thermal
resistance
Junction
to ambient
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
ELECTRICAL
CHARACTERISTICS
(T
A = 25°C unless otherwise noted.)
Storage temperature
Characteristic
Symbol
Min
Symbol
TYP.
MAX.
UNIT
IO
1.0
A
I FSM
30
A
IR
0.5
R θJA
CJ
130
T STG
Typ
MIN.
Max
-65
mA
O
C/W
pF
+175
O
C
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
*1
*3
*2
Collector–Emitter
Breakdown
V RRMVoltage V RMS BC856VSeries
SYMBOLS
R
Series
(IC = –10 µA, VEB = 0) (V)
(V) BC857(V)
*4
VF
(V)
SL12-N
14
20
Collector–Base Breakdown Voltage
SL13-N
21
30
(IC = – 10 µA)
SL14-N
40
28
20
0.38
30
0.40
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
BC858 Series
BC856 Series
BC857 Series
BC85840
Series
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
201.1
– 65
– 45
– 30
Operating
– 80
temperature
V (BR)CEST J, ( OC)– 50
– 30
– 80
-55 to +100
V (BR)CBO
– 50
– 30
– 5.0
V (BR)EBO
– 5.0
– 5.0
—
I CBO
—
V
BC857 Series
BC858 Series
0.40
(BR)CEO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
v
—
*1 —
Repetitive peak reverse voltage
—
v
*2 RMS voltage
—
*3 —
Continuous reverse voltage
—
v
*4 Maximum forward [email protected] F=1.0A
—
—
—
v
—
– 15
nA
– 4.0
µA
WILLAS ELECTRONIC CORP.
1.FR–5=1.0 x 0.75 x 0.062in
2012-
WILLAS ELECTRONIC CORP.
BC856A/BWT1
FM120-M+
THRU
BC857A/B/CWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
BC858A/B/CWT1
WILLAS
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
ELECTRICAL
(TA = 25°C
unlesstootherwise noted) (Continued)
surface mounted application
in order
• Low profileCHARACTERISTICS
optimize board space. Characteristic
Symbol
• Low power loss, high efficiency.
ON•CHARACTERISTICS
High current capability, low forward voltage drop.
surge
capability. BC856A, BC857A, BC858A
• High
DC
Current
Gain
Guardring
for
overvoltage
protection.
•
BC856B,
BC857B, BC858B
(I C = –10 µA, V CE = –5.0
V)
• Ultra high-speed switching.
BC857C, BC858C
metal silicon junction.
• Silicon epitaxial planar chip,
BC856A, BC857A, BC858A
(I C = –2.0 mA, V CE = –5.0 V)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Min
Typ
h FE
—
—
—
125
220
420
—
V CE(sat)
—
—
V BE(sat)
—
0.031(0.8) Typ.
– 0.6
V BE(on)
—
BC856B, BC857B, BC858B
BC857C,
BC858C,
suffix
"G"
• RoHS product for packing code
Collector–Emitter
Saturation
Voltage code
(I C = suffix
–10 mA,
Halogen free product
for packing
"H" I B = – 0.5 mA)
Collector–Emitter
Saturation
Mechanical
dataVoltage (I C = –100 mA, I B = – 5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
• Epoxy : UL94-V0 rated flame retardant
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
• Case : Molded plastic, SOD-123H
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
,
•
Terminals Voltage
:Plated (Iterminals,
solderable per MIL-STD-750
Base–Emitter
C = –10 mA, V CE = –5.0 V)
Method 2026
Max
Unit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
90
150
270
180
290
520
—
—
– 0.7
– 0.9
—
—
—
—
250
475
800
– 0.3
– 0.65
—
—
– 0.75
—
– 0.82
—
0.071(1.8)
0.056(1.4)
V
V
V
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
SMALL–SIGNAL CHARACTERISTICS
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Current–Gain — Bandwidth Product
fT
100
—
—
MHz
• Mounting Position : Any
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
• Weight
: Approximated
Output
Capacitance
(V CB = –0.011
10 V, gram
f = 1.0 MHz)
Cob
—
—
4.5
pF
Noise Figure
NF
––
––
10
dB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
Ratings at 25℃ ambient temperature unless otherwise specified.
SingleORDERING
phase half wave,
60Hz, resistive (ofPb
inductive
INFORMATION
– Free ) load.
For capacitive load, derate current by 20%
Device
Package
RATINGS
Shipping
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SOT-323
3000/Tape & Reel
BC85xx WT1
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
ELECTRONIC
WILLASWILLAS
ELECTRONIC
CORP.CORP
BC856A/BWT1
FM120-M+
THRU
BC857A/B/CWT1
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
General
Purpose
Transistors
BARRIER RECTIFIERS -20V- BC858A/B/CWT1
200V
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
BC857
/ BC858offers
dissipation
• Batch process design, excellent power
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
–1.0
optimize board space.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.3Halogen free product for packing code suffix "H"
T A = 25°C
–0.9
V BE(on) @ V CE = –10 V
–0.6
–0.4
–0.3
Mechanical data
V CE(sat) @ I C /I B = 10
–0.1
•0.2Epoxy : UL94-V0 rated flame retardant
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
• Case : Molded plastic, SOD-123H
I C , :Plated
COLLECTOR
CURRENT
(mAdc) per MIL-STD-750 ,
• Terminals
terminals,
solderable
0.040(1.0)
0.024(0.6)
0
–0.1
–0.2
–0.8
I C= –200 mA
C
C
–10 mA
RATINGS
–2.0
–5.0
–10
–20
–50
–100
0.031(0.8) Typ.
I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
Dimensions in inches and (millimeters)
1.0
–55°C to +125°C
1.2
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
–20
I C= –20 mA
–0.4
0
–0.02
1.6
2.0
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
2.4
SYMBOL FM120-MH FM130-MH
I C= –100 mA
Maximum DC Blocking Voltage
–0.1
–1.0
–10
13
302.8
14
40
10.0
C
CJ
TJ
ib
7.0
C, CAPACITANCE(pF)
Storage Temperature Range
TSTG
T A=25°C
5.0
CHARACTERISTICS
Maximum Forward
Voltage at 1.0A DC
3.0
VF
C ob
@T A=125℃
2.0
IR
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
2012-2012-06
10
100
115
150
120
200
28
35
42
56
70
105
140
40
–0.2
50 –1.0
60
80
–10
100
150
200
–100
1.0
CURRENT (mA)
I C , COLLECTOR
Figure 4. Base–Emitter Temperature
Coefficient
30
40
120
400
-55 to300
+125
-55 to +150
- 65 to +175
200
V CE = –10V
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
T = 25°C FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
18
80
30
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
16
60
21
I B , BASE CURRENT (mA)
Peak Forward Surge Current 8.3 ms single half sine-wave
Figure 3. Collector Saturation Region IFSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
15
50
IO
Maximum Average Forward Rectified Current
–1.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
–1.2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiveI load,
derate current Iby= 20%
–50 mA
=
Marking Code
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE, COLLECTOR– EMITTER VOLTAGE (V)
–1.6
–0.5
0.031(0.8) Typ.
Method 2026
0.071(1.8)
0.056(1.4)
–0.5
–0.2
• Polarity : Indicated by cathode band
Mounting Position : Any
•–2.0
• Weight : Approximated 0.011 gramT A = 25°C
0.012(0.3) Typ.
–0.7
Figure 1. Normalized DC Current Gain
0.146(3.7)
0.130(3.3)
V BE(sat) @ I C /I B=10
–0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
high efficiency.
•1.5Low power
VCE= –10loss,
V
capability, low forward voltage drop.
• High Tcurrent
=
25°C
A
• High surge capability.
1.0
• Guardring for overvoltage protection.
•0.7Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
•0.5Lead-free parts meet environmental standards of
–20 –30 –40
100
0.50
0.70
0.85
A
0.9
0.5
80
0.92
10
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
ELECTRONIC
WILLASWILLAS
ELECTRONIC
CORP.COR
BC856A/BWT1
FM120-M+
BC857A/B/CWT1
THRU
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
BC858A/B/CWT1
WILLAS
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
dissipation offers
• Batch process design, excellent power
BC856
better reverse leakage current and thermal resistance.
SOD-123H
optimize board space.
• Low power loss, high efficiency.
V CE = –5.0V
capability, low forward voltage drop.
• High current
T A = 25°C
capability.
• High surge
• Guardring for overvoltage protection.
2.0
• Ultra high-speed switching.
•1.0Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•0.5RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.2
Mechanical
data
–1.0
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
• Low profile surface mounted application in order to
–0.4
–0.2
VCE(sat) @ I C /I B= 10
0.040(1.0)
0.024(0.6)
0
–0.2
–0.5 –1.0 –2.0
–50mA
RATINGS
–0.4
Maximum DC Blocking Voltage
VRRM
12
20
VRMS
14
20
–10 –20
VDC
–5.0
Maximum Average Forward Rectified Current
IO
I B , BASE CURRENT (mA) Peak Forward Surge
Current
ms single half
sine-wave Region
Figure
9. 8.3
Collector
Saturation
IFSM
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
40
CJ
Typical Junction Capacitance (Note 1)
TJ
T J= 25°C
C, CAPACITANCE (pF)
Operating Temperature Range
Storage20
Temperature Range
TSTG
C ib
6.0 Blocking Voltage
Rated DC
VF
@TCA=125℃
IR
ob
NOTES:4.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2.0 Resistance From Junction to Ambient
2- Thermal
2012-06
2012-
θ VB for V BE
–55°C to 125°C
–2.2
–1.0 –2.0
–5.0
13
30–2.6
14
40
15
50
16
60
115
150
120
200
21
28
35
42
56
70
105
–3.0
30
40
50
60
80
100
150
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
1.0
I C , COLLECTOR
CURRENT (mA)
Figure 10. Base–Emitter
30Temperature Coefficient
140
18
80
40
120
-55 500
to +125VCE= –5.0V
10
100
200
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
–0.1 –0.2 –0.5
–1.8
200
CHARACTERISTICS
10 Forward Voltage at 1.0A DC
Maximum
–1.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
TJVoltage
= 25°C
Maximum RMS
0.031(0.8) Typ.
Figure 8. “On” Voltage
θVB , TEMPERATURE COEFFICIENT (mV/°C)
–20mA
Ratings at 25℃
ambient temperature unless otherwise specified.
–1.2 –10mA
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
–0.8
Maximum Recurrent Peak Reverse Voltage
–50 –100 –200
Dimensions in inches and (millimeters)
Marking Code
–10 –20
–1.4
MAXIMUM RATINGS AND–100mA
ELECTRICAL
CHARACTERISTICS
–200mA
IC =
0
–0.02
–5.0
0.031(0.8) Typ.
I C , COLLECTOR CURRENT (mA)
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
0.071(1.8)
0.056(1.4)
VBE @VCE= –5.0 V
Method
Figure2026
7. DC Current Gain
–1.6
0.012(0.3) Typ.
VBE(sat) @ I C/I B=10
–0.6
• Epoxy : UL94-V0 rated flame retardant
–0.1–0.2
–1.0
–2.0 –5.0
–10 –20 –50 –100–200
: Molded
plastic,
SOD-123H
• Case
,
I C , COLLECTOR
(mA)
• Terminals :Plated
terminals,CURRENT
solderable
per MIL-STD-750
• Polarity : Indicated by cathode band
Mounting Position : Any
•
–2.0
• Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
T J= 25°C
–10 –20
–50 –100
100 0.50
0.70
0.85
0.9
0.92
0.5
50
10
20
–1.0
–10
–100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BWT1
FM120-M+
BC857A/B/CWT1
THRU
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- BC858A/B/CWT1
200V
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
• Low profile surface mounted application in order to
1.0 optimize board space.
power loss, high efficiency.
• LowD=0.5
0.7
• High current capability, low forward voltage drop.
0.5
0.2surge capability.
• High
0.3
• Guardring for overvoltage protection.
0.2
• Ultra high-speed switching.
SINGLE PULSE
0.05
epitaxial planar chip, metal silicon junction.
• Silicon 0.1
0.1
• Lead-free parts meet environmental standards of
SINGLE PULSE
0.07 MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.05
Halogen free product for packing code suffix "H"
0.03
Mechanical data
0.02
• Epoxy : UL94-V0 rated flame retardant
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
0.040(1.0)
T J(pk) – T C = P (pk) R θJC0.024(0.6)
(t)
P(pk)
t1
t2
DUTY CYCLE, D = t 1 /t 2
• Case : Molded plastic, SOD-123H
0.01
,
0.2 :Plated
0.5terminals,
1.0 solderable
2.0
5.0
10
20
•0.1
Terminals
per MIL-STD-750
0.031(0.8) Typ.
50
100
Method 2026
t, TIME (ms)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Figure 13. Thermal Response
–200
0.031(0.8) Typ.
200
500
1.0k 2.0k
5.0k
10k
Dimensions in inches and (millimeters)
The safe operating area curves indicate I C –V CE limits of the
1s AND ELECTRICAL
3 ms
MAXIMUM RATINGS
CHARACTERISTICS
transistor that must be observed for reliable operation. Collector
I C , COLLECTOR CURRENT (mA)
–100
Ratings
at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz,
resistive Tof=inductive
load.
25°C
TA= 25°C
–50
J
For capacitive load, derate current by 20%
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is
variable
depending
upon conditions.
Pulse curves
are valid
for
FM150-MH
FM160-MH FM180-MH
FM1100-MH
FM1150-MH
SYMBOL FM120-MH FM130-MH FM140-MH
FM1200-MH
RATINGS
BC558
duty
cycles
to
10%
provided
T
<
150°C.
T
may
be
calcuJ(pk)
J(pk) 10
Marking Code
12
13
14
15
16
18
115
120
BC557
lated
the data50in Figure
or ambient
20
30 from40
60 13. At high
80 case100
150
200
Maximum
VRRM
–10 Recurrent Peak Reverse Voltage
BC556
temperatures,
14
21
28 thermal
35 limitations
42 will reduce
56 the power
70 that can
105
140
Maximum RMS Voltage
VRMS
be handled to values less than the limitations imposed by the sec–5.0
BONDING WIRE LIMIT
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
THERMAL LIMIT
ondary breakdown.
Maximum Average Forward
Rectified
Current LIMIT
IO
1.0
SECOND
BREAKDOWN
–2.0
Peak Forward
ms single–10
half sine-wave
–1.0 Surge Current 8.3
–0.5
–30 IFSM
–45 –65 –100
30
superimposed on rated load (JEDEC method)
, COLLECTOR–EMITTER
VOLTAGE
(V)
Typical ThermalVResistance
(Note 2)
RΘJA
CE
Typical Junction
Capacitance
(Note
1)
CJ Area
Figure
14. Active
Region
Safe Operating
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BWT1
FM120-M+
BC857A/B/CWT1
THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- BC858A/B/CWT1
200V
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT-323
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
.087(2.20)
• High surge capability.
• Guardring for overvoltage protection. .070(1.80)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
.054(1.35)
.045(1.15)
.004(0.10)MIN.
SOD-123H
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Method 2026.056(1.40)
• Polarity : Indicated by cathode
band
.047(1.20)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
.016(0.40)
VRMS
.008(0.20)
VDC
12
20
14
20
13
30
14
40
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
15
50
16
60
18
80
superimposed on rated load (JEDEC method)
28
35
42
56
70
105
140
40
50
60
80
100
150
200
1.0
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
120
200
30
Dimensions
in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
115
150
21
IO
Maximum Average Forward Rectified Current
10
100
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
WILLAS ELECTRONIC CORP.
BC856A/BWT1
FM120-M+
BC857A/B/CWT1
THRU
General
Transistors
FM1200-M
1.0A
SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V-BC858A/B/CWT1
200V
WILLAS
Features
SOD-123+ PACKAGE
Pb Free Produ
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
Packing loss, high efficiency.
• Low powerDevice PN 0.130(3.3)
• High current capability,(1)low forward voltage drop.
Part Number G
‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability.
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
40
Typical
Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage
Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-2012-06
ELECTRONIC
WILLASWILLAS
ELECTRONIC
CORP.COR
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