WILLAS Low VF Chip Schottky Barrier Diodes BC856A/BWT1 BC857A/B/CWT1 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V General Purpose TransistorsPackage outline BC858A/B/CWT1 SL12-N THRU SL14-N Features • Batch process design, excellent power dissipation offers SOD-323-L better reverse leakage current and thermal resistance. surface mounted application in order to • Low profile PNP Silicon optimize board space. 0.106 (2.7) 0.091 (2.3) These transistors areefficiency. designed for general purpose power loss, high • Low applications. Theyvery are housed in the SOT–323 High current capability, low forward voltage drop. • amplifier High surge capability. • which is designed for low power surface mount applications. Guardring for overvoltage protection. •Features Sensitivity 1 y• Moisture Very tiny plastic SMD Level package. suited for automatic Ultra high-speed switching. insertion y• Ideally y• For Switching and AF Amplifier Applications Silicon epitaxial planar chip, metal silicon junction. RoHS product for packing code suffix "G" • 0.012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) SOT– 323 Halogen free product for packing code suffix "H" MAXIMUM RATINGS Mechanical data • • • Rating Symbol BC856 BC857 Epoxy : UL94-V0 rated flame retardant –65 –45 Collector–Emitter Voltage V CEO Case : Molded plastic, SOD-323-L Collector–Base Voltage V CBO –80 –50 Terminals :Plated terminals, solderable per MIL-STD-750, –5.0 –5.0 Emitter–Base Voltage V EBO Method 2026 • Polarity cathode band Collector: Indicated Current — by Continuous IC • Mounting Position : Any • Weight : Approximated 0.008 gram THERMAL CHARACTERISTICS –100 Characteristic BC858 –100 –30 3 COLLECTOR V 0.016(0.4) Typ. 0.016(0.4) Typ. 1 BASE –30 V –5.0 V Dimensions in inches and (millimeters) –100 Symbol 0.047 (1.2) 0.031 (0.8) Unit 2 EMITTER mAdc Max Unit Total Device Dissipation FR– 5 Board, (1) PD 150 Maximum ratings (AT T A=25 oC unless otherwise noted) TA = 25°C mW ThermalPARAMETER Resistance, Junction to Ambient Junction and Storage Temperature Forward rectified current See Fig.2 Forward surge current DEVICE MARKING R θJA 833 CONDITIONS T J , T stg –55 to +150 °C/W °C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R BC857AWT1 = V RRM T J = =25 BC856AWT1 = 3A; BC856BWT1 = 3B; 3E;C BC857BWT1 = 3F; Reverse current O BC858BWT1= 3K; BC858CWT1 = 3L BC857CWT1= 3G; BC858AWT1 = 3J; Thermal resistance Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Storage temperature Characteristic Symbol Min Symbol TYP. MAX. UNIT IO 1.0 A I FSM 30 A IR 0.5 R θJA CJ 130 T STG Typ MIN. Max -65 mA O C/W pF +175 O C Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) BC856 Series *1 *3 *2 Collector–Emitter Breakdown V RRMVoltage V RMS BC856VSeries SYMBOLS R Series (IC = –10 µA, VEB = 0) (V) (V) BC857(V) *4 VF (V) SL12-N 14 20 Collector–Base Breakdown Voltage SL13-N 21 30 (IC = – 10 µA) SL14-N 40 28 20 0.38 30 0.40 Emitter–Base Breakdown Voltage (IE = – 1.0 µA) BC858 Series BC856 Series BC857 Series BC85840 Series BC856 Series BC857 Series BC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 201.1 – 65 – 45 – 30 Operating – 80 temperature V (BR)CEST J, ( OC)– 50 – 30 – 80 -55 to +100 V (BR)CBO – 50 – 30 – 5.0 V (BR)EBO – 5.0 – 5.0 — I CBO — V BC857 Series BC858 Series 0.40 (BR)CEO — — — — — — — — — — — — — — — — v — *1 — Repetitive peak reverse voltage — v *2 RMS voltage — *3 — Continuous reverse voltage — v *4 Maximum forward voltage@I F=1.0A — — — v — – 15 nA – 4.0 µA WILLAS ELECTRONIC CORP. 1.FR–5=1.0 x 0.75 x 0.062in 2012- WILLAS ELECTRONIC CORP. BC856A/BWT1 FM120-M+ THRU BC857A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC858A/B/CWT1 WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H ELECTRICAL (TA = 25°C unlesstootherwise noted) (Continued) surface mounted application in order • Low profileCHARACTERISTICS optimize board space. Characteristic Symbol • Low power loss, high efficiency. ON•CHARACTERISTICS High current capability, low forward voltage drop. surge capability. BC856A, BC857A, BC858A • High DC Current Gain Guardring for overvoltage protection. • BC856B, BC857B, BC858B (I C = –10 µA, V CE = –5.0 V) • Ultra high-speed switching. BC857C, BC858C metal silicon junction. • Silicon epitaxial planar chip, BC856A, BC857A, BC858A (I C = –2.0 mA, V CE = –5.0 V) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Min Typ h FE — — — 125 220 420 — V CE(sat) — — V BE(sat) — 0.031(0.8) Typ. – 0.6 V BE(on) — BC856B, BC857B, BC858B BC857C, BC858C, suffix "G" • RoHS product for packing code Collector–Emitter Saturation Voltage code (I C = suffix –10 mA, Halogen free product for packing "H" I B = – 0.5 mA) Collector–Emitter Saturation Mechanical dataVoltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) • Epoxy : UL94-V0 rated flame retardant Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) • Case : Molded plastic, SOD-123H Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) , • Terminals Voltage :Plated (Iterminals, solderable per MIL-STD-750 Base–Emitter C = –10 mA, V CE = –5.0 V) Method 2026 Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 90 150 270 180 290 520 — — – 0.7 – 0.9 — — — — 250 475 800 – 0.3 – 0.65 — — – 0.75 — – 0.82 — 0.071(1.8) 0.056(1.4) V V V 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. SMALL–SIGNAL CHARACTERISTICS Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Current–Gain — Bandwidth Product fT 100 — — MHz • Mounting Position : Any (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) • Weight : Approximated Output Capacitance (V CB = –0.011 10 V, gram f = 1.0 MHz) Cob — — 4.5 pF Noise Figure NF –– –– 10 dB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) Ratings at 25℃ ambient temperature unless otherwise specified. SingleORDERING phase half wave, 60Hz, resistive (ofPb inductive INFORMATION – Free ) load. For capacitive load, derate current by 20% Device Package RATINGS Shipping SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SOT-323 3000/Tape & Reel BC85xx WT1 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- ELECTRONIC WILLASWILLAS ELECTRONIC CORP.CORP BC856A/BWT1 FM120-M+ THRU BC857A/B/CWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY General Purpose Transistors BARRIER RECTIFIERS -20V- BC858A/B/CWT1 200V WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features BC857 / BC858offers dissipation • Batch process design, excellent power better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to –1.0 optimize board space. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.3Halogen free product for packing code suffix "H" T A = 25°C –0.9 V BE(on) @ V CE = –10 V –0.6 –0.4 –0.3 Mechanical data V CE(sat) @ I C /I B = 10 –0.1 •0.2Epoxy : UL94-V0 rated flame retardant –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 • Case : Molded plastic, SOD-123H I C , :Plated COLLECTOR CURRENT (mAdc) per MIL-STD-750 , • Terminals terminals, solderable 0.040(1.0) 0.024(0.6) 0 –0.1 –0.2 –0.8 I C= –200 mA C C –10 mA RATINGS –2.0 –5.0 –10 –20 –50 –100 0.031(0.8) Typ. I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages Dimensions in inches and (millimeters) 1.0 –55°C to +125°C 1.2 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 –20 I C= –20 mA –0.4 0 –0.02 1.6 2.0 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 2.4 SYMBOL FM120-MH FM130-MH I C= –100 mA Maximum DC Blocking Voltage –0.1 –1.0 –10 13 302.8 14 40 10.0 C CJ TJ ib 7.0 C, CAPACITANCE(pF) Storage Temperature Range TSTG T A=25°C 5.0 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 3.0 VF C ob @T A=125℃ 2.0 IR NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 2012-2012-06 10 100 115 150 120 200 28 35 42 56 70 105 140 40 –0.2 50 –1.0 60 80 –10 100 150 200 –100 1.0 CURRENT (mA) I C , COLLECTOR Figure 4. Base–Emitter Temperature Coefficient 30 40 120 400 -55 to300 +125 -55 to +150 - 65 to +175 200 V CE = –10V 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH T = 25°C FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 18 80 30 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range 16 60 21 I B , BASE CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave Figure 3. Collector Saturation Region IFSM superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) 15 50 IO Maximum Average Forward Rectified Current –1.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. –1.2 Single phase half wave, 60Hz, resistive of inductive load. For capacitiveI load, derate current Iby= 20% –50 mA = Marking Code θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE, COLLECTOR– EMITTER VOLTAGE (V) –1.6 –0.5 0.031(0.8) Typ. Method 2026 0.071(1.8) 0.056(1.4) –0.5 –0.2 • Polarity : Indicated by cathode band Mounting Position : Any •–2.0 • Weight : Approximated 0.011 gramT A = 25°C 0.012(0.3) Typ. –0.7 Figure 1. Normalized DC Current Gain 0.146(3.7) 0.130(3.3) V BE(sat) @ I C /I B=10 –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 high efficiency. •1.5Low power VCE= –10loss, V capability, low forward voltage drop. • High Tcurrent = 25°C A • High surge capability. 1.0 • Guardring for overvoltage protection. •0.7Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. •0.5Lead-free parts meet environmental standards of –20 –30 –40 100 0.50 0.70 0.85 A 0.9 0.5 80 0.92 10 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product ELECTRONIC WILLASWILLAS ELECTRONIC CORP.COR BC856A/BWT1 FM120-M+ BC857A/B/CWT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BC858A/B/CWT1 WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features dissipation offers • Batch process design, excellent power BC856 better reverse leakage current and thermal resistance. SOD-123H optimize board space. • Low power loss, high efficiency. V CE = –5.0V capability, low forward voltage drop. • High current T A = 25°C capability. • High surge • Guardring for overvoltage protection. 2.0 • Ultra high-speed switching. •1.0Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 •0.5RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.2 Mechanical data –1.0 –0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) • Low profile surface mounted application in order to –0.4 –0.2 VCE(sat) @ I C /I B= 10 0.040(1.0) 0.024(0.6) 0 –0.2 –0.5 –1.0 –2.0 –50mA RATINGS –0.4 Maximum DC Blocking Voltage VRRM 12 20 VRMS 14 20 –10 –20 VDC –5.0 Maximum Average Forward Rectified Current IO I B , BASE CURRENT (mA) Peak Forward Surge Current ms single half sine-wave Region Figure 9. 8.3 Collector Saturation IFSM –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) 40 CJ Typical Junction Capacitance (Note 1) TJ T J= 25°C C, CAPACITANCE (pF) Operating Temperature Range Storage20 Temperature Range TSTG C ib 6.0 Blocking Voltage Rated DC VF @TCA=125℃ IR ob NOTES:4.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.0 Resistance From Junction to Ambient 2- Thermal 2012-06 2012- θ VB for V BE –55°C to 125°C –2.2 –1.0 –2.0 –5.0 13 30–2.6 14 40 15 50 16 60 115 150 120 200 21 28 35 42 56 70 105 –3.0 30 40 50 60 80 100 150 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 1.0 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter 30Temperature Coefficient 140 18 80 40 120 -55 500 to +125VCE= –5.0V 10 100 200 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ –0.1 –0.2 –0.5 –1.8 200 CHARACTERISTICS 10 Forward Voltage at 1.0A DC Maximum –1.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH TJVoltage = 25°C Maximum RMS 0.031(0.8) Typ. Figure 8. “On” Voltage θVB , TEMPERATURE COEFFICIENT (mV/°C) –20mA Ratings at 25℃ ambient temperature unless otherwise specified. –1.2 –10mA Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% –0.8 Maximum Recurrent Peak Reverse Voltage –50 –100 –200 Dimensions in inches and (millimeters) Marking Code –10 –20 –1.4 MAXIMUM RATINGS AND–100mA ELECTRICAL CHARACTERISTICS –200mA IC = 0 –0.02 –5.0 0.031(0.8) Typ. I C , COLLECTOR CURRENT (mA) fT, CURRENT– GAIN – BANDWIDTH PRODUCT T V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 0.071(1.8) 0.056(1.4) VBE @VCE= –5.0 V Method Figure2026 7. DC Current Gain –1.6 0.012(0.3) Typ. VBE(sat) @ I C/I B=10 –0.6 • Epoxy : UL94-V0 rated flame retardant –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 : Molded plastic, SOD-123H • Case , I C , COLLECTOR (mA) • Terminals :Plated terminals,CURRENT solderable per MIL-STD-750 • Polarity : Indicated by cathode band Mounting Position : Any • –2.0 • Weight : Approximated 0.011 gram 0.146(3.7) 0.130(3.3) T J= 25°C –10 –20 –50 –100 100 0.50 0.70 0.85 0.9 0.92 0.5 50 10 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BWT1 FM120-M+ BC857A/B/CWT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- BC858A/B/CWT1 200V WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) • Low profile surface mounted application in order to 1.0 optimize board space. power loss, high efficiency. • LowD=0.5 0.7 • High current capability, low forward voltage drop. 0.5 0.2surge capability. • High 0.3 • Guardring for overvoltage protection. 0.2 • Ultra high-speed switching. SINGLE PULSE 0.05 epitaxial planar chip, metal silicon junction. • Silicon 0.1 0.1 • Lead-free parts meet environmental standards of SINGLE PULSE 0.07 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.05 Halogen free product for packing code suffix "H" 0.03 Mechanical data 0.02 • Epoxy : UL94-V0 rated flame retardant 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 0.040(1.0) T J(pk) – T C = P (pk) R θJC0.024(0.6) (t) P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 • Case : Molded plastic, SOD-123H 0.01 , 0.2 :Plated 0.5terminals, 1.0 solderable 2.0 5.0 10 20 •0.1 Terminals per MIL-STD-750 0.031(0.8) Typ. 50 100 Method 2026 t, TIME (ms) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Figure 13. Thermal Response –200 0.031(0.8) Typ. 200 500 1.0k 2.0k 5.0k 10k Dimensions in inches and (millimeters) The safe operating area curves indicate I C –V CE limits of the 1s AND ELECTRICAL 3 ms MAXIMUM RATINGS CHARACTERISTICS transistor that must be observed for reliable operation. Collector I C , COLLECTOR CURRENT (mA) –100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive Tof=inductive load. 25°C TA= 25°C –50 J For capacitive load, derate current by 20% load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH FM130-MH FM140-MH FM1200-MH RATINGS BC558 duty cycles to 10% provided T < 150°C. T may be calcuJ(pk) J(pk) 10 Marking Code 12 13 14 15 16 18 115 120 BC557 lated the data50in Figure or ambient 20 30 from40 60 13. At high 80 case100 150 200 Maximum VRRM –10 Recurrent Peak Reverse Voltage BC556 temperatures, 14 21 28 thermal 35 limitations 42 will reduce 56 the power 70 that can 105 140 Maximum RMS Voltage VRMS be handled to values less than the limitations imposed by the sec–5.0 BONDING WIRE LIMIT Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC THERMAL LIMIT ondary breakdown. Maximum Average Forward Rectified Current LIMIT IO 1.0 SECOND BREAKDOWN –2.0 Peak Forward ms single–10 half sine-wave –1.0 Surge Current 8.3 –0.5 –30 IFSM –45 –65 –100 30 superimposed on rated load (JEDEC method) , COLLECTOR–EMITTER VOLTAGE (V) Typical ThermalVResistance (Note 2) RΘJA CE Typical Junction Capacitance (Note 1) CJ Area Figure 14. Active Region Safe Operating Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BWT1 FM120-M+ BC857A/B/CWT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- BC858A/B/CWT1 200V WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-323 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. .087(2.20) • High surge capability. • Guardring for overvoltage protection. .070(1.80) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) .054(1.35) .045(1.15) .004(0.10)MIN. SOD-123H Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) Method 2026.056(1.40) • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM .016(0.40) VRMS .008(0.20) VDC 12 20 14 20 13 30 14 40 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 15 50 16 60 18 80 superimposed on rated load (JEDEC method) 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 120 200 30 Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave 115 150 21 IO Maximum Average Forward Rectified Current 10 100 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012- WILLAS ELECTRONIC CORP. BC856A/BWT1 FM120-M+ BC857A/B/CWT1 THRU General Transistors FM1200-M 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-BC858A/B/CWT1 200V WILLAS Features SOD-123+ PACKAGE Pb Free Produ Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Packing loss, high efficiency. • Low powerDevice PN 0.130(3.3) • High current capability,(1)low forward voltage drop. Part Number G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-2012-06 ELECTRONIC WILLASWILLAS ELECTRONIC CORP.COR