SMD Type MOSFET MOSFET Product specification KE3587-G (ME3587-G) ( SOT-23-6 ) ■ Features Unit: mm ● RDS(ON) ＜0.045Ω @VGS=4.5V ● RDS(ON) ＜0.068Ω @VGS=2.5V ● RDS(ON) ＜0.12Ω @VGS=1.8V D1 ０．３ｍｉｎ ● N-channel:VDS=20V ID=4A D2 S1 ● P-channel:VDS=-20V ID=-2A ０ｔｏ０．１ ● R DS(ON) ＜0.11Ω @VGS=-4.5V ● R DS(ON) ＜0.13Ω @VGS=-2.5V ● R DS(ON) ＜0.17Ω @VGS=-1.8V G1 S2 G2 D2 D1 G1 G2 S1 S2 n-channel p-channel ■ Ａｂｓｏｌｕｔｅ Ｍａｘｉｍｕｍ Ｒａｔｉｎｇｓ Ｔａ ＝ ２５℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current Symbol Max N-Channel Max P-Channel VDS 20 -20 ±8 VGS -Continuous -Pulsed Power Dissipation Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range http://www.twtysemi.com ID 4 -2 IDM +15 -10 Unit V A PD 1.15 W RθJA 110 ℃/W Tj.Tstg –55 to +150 ℃ [email protected] 4008-318-123 1 of 2 SMD Type MOSFET MOSFET Product specification KE3587-G (ME3587-G) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Gate Threshold Voltage (NOTE 1) Drain- Source on-state Resistance (NOTE 1) IGSS VGS(th) RDS(ON) Forward Transconductance (NOTE 1) gFS Total Gate Charge Qg Gate-S ource Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage http://www.twtysemi.com Qgs ID=-250uA,VGS=0 P-Ch -20 VDS=20V,VGS=0V N-Ch 1 VDS=-20V,VGS=0V P-Ch -1 VGS=±10V,VDS=0V N-Ch ±100 P-Ch ±100 VGS=VDS,ID=250uA N-Ch 0.5 0.75 1 VGS=VDS,ID=-250uA P-Ch -0.5 -0.75 -1 VGS=4.5V,ID=4A N-Ch 0.045 VGS=-4.5V,ID=-2.8A P-Ch 0.11 VGS=2.5V,ID=3A N-Ch 0.068 VGS=-2.5V,ID=-2.4A P-Ch 0.13 VGS=1.8V,ID=2A N-Ch 0.12 VGS=-1.8V,ID=-1.7A P-Ch 0.17 VDS=5V,ID=4A N-Ch 5 VDS=-5V,ID=-2.3A P-Ch 4 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4A P-Channel VDS = – 6V, VGS = – 4.5 V, ID = –2.8 A N-Channel VDS = 10 V, VGS = 0 V, f = 1MHz P-Channel VDS = – 10V, VGS = 0 V, f = 1MHz 11.2 14 P-Ch 9 11 N-Ch 1.4 P-Ch 2.3 N-Ch 2.2 P-Ch 2.0 N-Ch 650 700 P-Ch 650 680 N-Ch 175 P-Ch 120 V Ω N-Ch 85 P-Ch 38 PF 9 25 45 N-Ch 17 60 P-Ch 25 30 N-Ch 46 70 P-Ch 43 50 N-Ch 2.7 20 P-Ch 5 7 VGS=0V,IS=1A N-Ch 0.8 1.0 VGS=0V,IS=-1A P-Ch -0.85 -1.0 [email protected] nA nC 38 tf VSD N-Ch P-Ch N-Channel VDS = 10 V, RL = 10 Ω ,ID = 1 A VGS = 4.5 V, RG = 6 Ω P-Channel VDS = - 6 V, RL = 3.6 Ω, ID = - 1 A VGS = - 4.5 V, RG = 6 Ω µA S N-Ch tD(on) Unit V VGS=±10V,VDS=0V Crss tD(off) Max +20 Ciss tr Typ N-Ch Qgd Coss Min ID=+250uA,VGS=0 4008-318-123 ns V 2 of 2