INFINEON BF775A

BF 775A
NPN Silicon RF Transistor
• Especially suitable for amplifiers
and TV-sat tuners
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BF 775A
SOT-23
LGs
Q62702-F1250
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
16
Collector-emitter voltage
VCES
25
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2
Collector current
IC
30
Base current
IB
4
Total power dissipation
Ptot
TS ≤ 59 °C
Values
Unit
V
mA
mW
280
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 325
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BF 775A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
16
100
nA
-
-
100
IEBO
µA
-
-
10
hFE
IC = 15 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 2 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 25 V, VBE = 0
Collector-base cutoff current
V
50
2
120
200
Dec-12-1996
BF 775A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
4.5
pF
-
0.39
0.6
-
0.19
-
-
0.9
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
5.8
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 5 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
-
1.45
-
f = 1.8 GHz
-
2.2
-
f = 900 MHz
-
16
-
f = 1.8 GHz
-
10.5
-
f = 900 MHz
-
13
-
f = 1.8 GHz
-
7.5
-
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996