MSF4N60

MSF4N60
MSF4N60 600V N-Channel MOSFET
Description
The MSF4N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
•RoHS compliant package
Application (500V-600V)
• Open Framed Power Supply
• Adapter
Graphic symbol
• STB
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
4.5
A
Drain Current -Continuous (TC=100°C)
2.6
A
IDM
Drain Current Pulsed
18
A
IAR
Avalanche Current
4.0
A
EAS
Single Pulsed Avalanche Energy
33
mJ
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
300
°C
ID
TL
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
Absolute Maximum Ratings
TPKG
PD
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25°C)
Derating Factor above 25 °C
TSTG
Operating and Storage Temperature Range
TJ
Storage Temperature
260
°C
31
W
0.25
W/°C
-55 to +150
°C
150
°C
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=4A, VDD=50V, L=8mH, VG=10V, Starting TJ=25℃
3. ISD≦4A, di/dt≦100A/μs,VDD≦BVDSS, Starting TJ=25℃
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
RθJC
Thermal Resistance, Junction-to-Case
3.7
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Static Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID = 250μA
600
--
--
V
--
0.6
--
V/°C
2.0
--
4.0
V
--
--
1
μA
VGS = ±30
--
--
±100
nA
VGS = 10 V,ID = 2.25 A
--
2.0
2.5
Ω
Min
Typ.
Max.
Units
--
10
30
ns
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID = 250μA
Zero Gate Voltage Drain
VDS = 600 V , VGS = 0 V
Current
VDS = 480 V , TC= 125°C
IDSS
IGSS
RDS(ON)
Units
Gate-Body Leakage
Forward
Static Drain-Source
On-Resistance
Dynamic Characteristics
Symbol
Parameter
ID = 250μA, Referenced to 25°C
Test Conditions
10
td(on)
Turn-On Time
tr
Turn-On Time
VDS = 300 V, ID = 4.5 A,
--
40
80
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω , VGS = 10 V
--
40
100
ns
tf
Turn-Off Fall Time
--
50
90
ns
Qg
Total Gate Charge
--
16
--
nC
--
2.5
--
nC
--
6.5
--
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Publication Order Number: [MSF4N60]
VDS = 480 V,ID = 4.5 A,
VGS =10 V
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
CISS
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
Parameter
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Test Conditions
IS
ISM
VD = VG = 0
Min
Typ.
Max.
Units
--
560
--
pF
--
55
--
pF
--
7
--
pF
Min
Typ.
Max.
Units
--
--
4.0
--
--
16
A
VSD
IS = 3 A , VGS = 0 V
--
--
1.4
V
trr
IS = 3 A , VGS = 0 V
--
270
--
ns
Qrr
diF/dt=100A/μs
--
18
--
μC
Notes;
1. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60
MSF4N60 600V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
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(ii) Any and all liability, including without limitation special, consequential or incidental damages.
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non-infringement and merchantability.
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Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF4N60]
© Bruckewell Technology Corporation Rev. A -2014