MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • BVDSS=400V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 2.0 A Drain Current -Continuous (TC=100°C) 1.8 A IDM Drain Current Pulsed 5.4 A EAS Single Pulsed Avalanche Energy 100 mJ EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns ID Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014 MSF2N40 400V N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter TL TPKG PD Value Unit 300 °C 260 °C Total Power Dissipation(@TC = 25 °C) 44 W 24 W Derating Factor above 25 °C 0.3 W/°C -55 to +150 °C 150 °C Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds TSTG Operating and Storage Temperature Range TJ Storage Temperature Note: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=5.5A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C. 3. ISD≤5.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Max. Rthjc Typical thermal resistance 2.87 RθJA Typical thermal resistance 62.5 Units °C/W * When mounted on the minimum pad size recommended (PCB Mount) Static Characteristics Symbol Test Conditions Min Typ. Max. Units VGS VDS = VGS,ID = 250μA 2.0 -- 4.0 V *RDS(ON) VGS = 10 V,ID = 1.0 A -- 1.0 1.5 Ω BVDSS VGS = 0 V , ID = 250μA 400 -- -- V △BVDSS /△TJ ID = 250μA, Referenced to 25°C -- 0.4 -- -- -- IDSS VDS = 400 V , VGS = 0 V VDS = 320 V , VGS = 0 V , TC= 125°C 1 10 μA IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 670 870 pF -- 95 125 pF -- 16 21 pF Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 25 V, VGS = 0 V, f = 1.0MHz CRSS Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014 MSF2N40 400V N-Channel MOSFET Dynamic Characteristics Symbol Test Conditions td(on) Min Typ. Max. Units -- 20 50 ns tr VDS = 200 V, ID = 5.5 A, -- 50 110 ns td(off) RG = 25 Ω -- 90 190 ns -- 55 120 ns -- 25 33 nC -- 5.0 -- -- 10.0 -- Min Typ. Max. IS -- -- 2 ISM -- -- 2.5 tf Qg Qgs VDS = 320 V,ID = 5.5 A, VGS = 10 V Qgd Source-Drain Diode Characteristics Symbol Test Conditions Units A VSD IS = 2 A , VGS = 0 V -- -- 1.5 V trr IS = 2 A , VGS = 0 V -- 220 -- ns Qrr diF/dt = 100A/μs -- 2 -- μC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=2A, VDD=50V, RG=25W, Starting TJ=25℃ 3. ISD≦2A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014 MSF2N40 400V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014 MSF2N40 400V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014 MSF2N40 400V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF2N40] © Bruckewell Technology Corporation Rev. A -2014