MSF6N70

MSF6N70
700V N-Channel MOSFET
Description
The MSF6N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
6.0
A
Drain Current -Continuous (TC=100°C)
3.5
A
IDM
Drain Current Pulsed
22
A
EAS
Single Pulsed Avalanche Energy
350
mJ
EAR
Repetitive Avalanche Energy
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
Power Dissipation (TC=25°C)
48
W
Power Dissipation (TC=100°C)
0.38
W/°C
ID
PD
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
TJ,TSTG
Operating and Storage Temperature Range
Value
Unit
-55 to +150
°C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=5.5A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤5.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
4.0
V
VGS
VDS = VGS, ID = 250μA
2.0
*RDS(ON)
VGS = 10 V , ID = 2.8 A
--
1.5
1.8
Ω
BVDSS
VGS = 0 V , ID = 250μA
700
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 700 V , VGS = 0 V
VDS = 560 V , VGS = 0 V , Tj = 125°C
IGSSF
VDS = 30 V, VDS =0 V
IGSSR
VDS = -30 V, VDS =0 V
0.7
--
--
1
10
uA
100
nA
--
--
-100
nA
Min
Typ.
Max.
Units
--
1100
1500
pF
--
110
150
pF
CRSS
--
12
16
pF
td(on)
--
10
30
ns
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
tr
VDS = 350 V, ID = 5.5 A,
--
35
80
ns
td(off)
RG = 25 Ω
--
45
100
ns
--
40
90
ns
--
29
37
nC
--
5
--
--
11
--
tf
Qg
Qgs
VDS = 560 V,ID = 5.5 A,
VGS = 10 V
Qgd
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
Source-Drain Diode Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
IS
--
--
5.5
ISM
--
--
22
--
--
1.5
V
--
390
--
ns
--
3.6
--
uC
VSD
trr
Qrr
Units
A
IF = 5.5 A , VGS = 0
IF = 5.5 A , VGS = 0 , dIF/dt = 100A/μs
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N70
700V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF6N70]
© Bruckewell Technology Corporation Rev. A -2014