INFINEON SPB80N04S2-H4

SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
OptiMOS Power-Transistor
Product Summary
Feature
• N-Channel
VDS
• Enhancement mode
R DS(on)
ID
• 175°C operating temperature
• Avalanche rated
40
P- TO262 -3-1
V
4
mΩ
80
P- TO263 -3-2
A
P- TO220 -3-1
• dv/dt rated
Type
SPP80N04S2-H4
Package
P- TO220 -3-1
Ordering Code
Q67060-S6014
Marking
SPB80N04S2-H4
P- TO263 -3-2
Q67060-S6013
2N04H4
SPI80N04S2-H4
P- TO262 -3-1
Q67060-S6014
2N04H4
2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
Value
Unit
A
ID
80
TC=25°C
80
ID puls
320
EAS
660
Repetitive avalanche energy, limited by Tjmax 2)
EAR
25
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
300
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=80 A , V DD=25V, RGS=25Ω
kV/µs
IS=80A, VDS=32V, di/dt=200A/µs, T jmax=175°C
TC=25°C
Operating and storage temperature
T j , Tstg
55/175/56
IEC climatic category; DIN IEC 68-1
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2003-05-08
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.35
0.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
-
-
62
-
-
40
@ min. footprint
@ 6 cm2 cooling area
3)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
40
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain-source breakdown voltage
V
V GS=0V, ID=1mA
Gate threshold voltage, VGS = V DS
ID=250µA
Zero gate voltage drain current
µA
IDSS
V DS=40V, VGS=0V, Tj=25°C
-
0.01
1
V DS=40V, VGS=0V, Tj=125°C 2)
-
1
100
IGSS
-
1
100
nA
RDS(on)
-
3.4
4
mΩ
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=10V, I D=80A
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2003-05-08
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
53
105
-
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID *RDS(on)max,
S
ID =80A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
4430
5890 pF
Output capacitance
Coss
f=1MHz
-
1580
2100
Reverse transfer capacitance
Crss
-
400
600
Turn-on delay time
td(on)
VDD =20V, VGS =10V,
-
14
21
Rise time
tr
ID =80A,
-
36
54
Turn-off delay time
td(off)
RG =1.3Ω
-
46
69
Fall time
tf
-
35
53
-
22
29
-
47
70
-
111
148
V(plateau) VDD = 32 V , ID =80A
-
5.2
-
V
IS
-
-
80
A
-
-
320
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =32V, ID =80A
VDD =32V, ID =80A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0V, IF =80A
-
0.9
1.3
V
Reverse recovery time
trr
VR =20V, IF =lS ,
-
195
240
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
370
460
nC
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2003-05-08
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
1 Power dissipation
2 Drain current
Ptot = f (TC)
ID = f (T C)
parameter: VGS≥ 6 V
parameter: VGS≥ 10 V
SPP80N04S2-H4
320
SPP80N04S2-H4
90
A
W
70
60
ID
P tot
240
200
50
160
40
120
30
80
20
40
10
0
0
20
40
60
80
0
100 120 140 160 °C 190
0
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
Z thJC = f (t p)
parameter : D = 0 , TC = 25 °C
parameter : D = t p/T
10
3 SPP80N04S2-H4
10
1 SPP80N04S2-H4
K/W
A
10
0
Z thJC
100 µs
R
2
ID
10
DS
(on
)
=
V
DS
/I
D
t = 29.0µs
p
1 ms
10
-1
10
-2
D = 0.50
0.20
10
1
10
-3
0.10
0.05
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-5
0.02
single pulse
0.01
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
tp
VDS
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2003-05-08
0
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (V DS); T j=25°C
RDS(on) = f (I D)
parameter: tp = 80 µs
parameter: VGS
SPP80N04S2-H4
190
Ω
A
hg f
VGS [V]
e
140
120
100
d
a
4.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
10.0
d
e
11
10
R DS(on)
160
ID
SPP80N04S2-H4
13
Ptot = 300W
9
8
7
6
80
f
5
60
g
4
h
40
3
c
2
20
b
a
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS [V] =
d
5.5
1
4
V
e
6.0
f
6.5
g
h
7.0 10.0
40
60
0
5
0
20
80
100 120 140
A
180
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max
g fs = f(I D); T j=25°C
parameter: tp = 80 µs
parameter: g fs
160
140
A
S
120
g fs
ID
100
100
80
80
60
60
40
40
20
20
0
0
1
2
3
4
0
V
6
VGS
Page 5
0
20
40
60
80
100
120
A 160
ID
2003-05-08
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (T j)
parameter : ID = 80 A, VGS = 10 V
parameter: VGS = VDS
SPP80N04S2-H4
12
3.5
Ω
V
1.25 mA
9
V GS(th)
R DS(on)
10
8
7
250 µA
2.5
2
6
5
1.5
98%
4
typ
1
3
2
0.5
1
0
-60
-20
20
60
140 °C
100
0
-60
200
-20
20
60
°C
100
180
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (V DS)
IF = f (V SD)
parameter: VGS=0V, f=1 MHz
parameter: T j , tp = 80 µs
10
5
10
pF
A
4
C iss
C
10
2
10
1
IF
10
3 SPP80N04S2-H4
C oss
10
3
C rss
T j = 25 °C typ
T j = 175 °C typ
T j = 25 °C (98%)
T j = 175 °C (98%)
10
2
0
10
5
10
15
20
V
30
0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
V DS
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SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
13 Typ. avalanche energy
14 Typ. gate charge
E AS = f (T j)
VGS = f (QGate)
par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω
parameter: ID = 80 A pulsed
SPP80N04S2-H4
16
700
mJ
V
600
12
500
VGS
E AS
550
450
0,2 VDS max
10
0,8 VDS max
400
8
350
300
6
250
200
4
150
100
2
50
0
25
45
65
85
105
125
145
°C 185
Tj
0
0
20
40
60
80
100 120
140 nC 170
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
48
SPP80N04S2-H4
V
V(BR)DSS
46
45
44
43
42
41
40
39
38
37
36
-60
-20
20
60
100
140 °C
200
Tj
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2003-05-08
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N04S2-H4 and BSPB80N04S2-H4, for simplicity the device is referred
to by the term SPP80N04S2-H4 and SPB80N04S2-H4 throughout this documentation.
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2003-05-08