Rev. 1.0 SIPMOS Power-Transistor BSP125 Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP125 SOT-223 Q62702-S654 E6327: 3000 pcs/reel BSP125 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value A ID TA=25°C 0.12 TA=70°C 0.1 Pulsed drain current Unit ID puls 0.48 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.12A, VDS =480V, di/dt=200A/µs, T jmax=175°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1 Ptot 1.8 W -55... +150 °C TA=25°C, T A=25 Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2003-02-26 Rev. 1.0 BSP125 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 600 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=0.25mA Gate threshold voltage, V GS = VDS ID=94µA Zero gate voltage drain current µA I DSS VDS=600V, VGS=0, Tj =25°C - - 0.1 VDS=600V, VGS=0, Tj =125°C - - 5 I GSS - 10 100 nA RDS(on) - 26 60 Ω RDS(on) - 25 45 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.11A Drain-source on-state resistance VGS=10V, ID=0.12A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-02-26 Rev. 1.0 BSP125 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.06 0.18 - S pF Dynamic Characteristics Transconductance g fs VDS≥2*ID*RDS(on)max, ID=0.1A Input capacitance C iss VGS=0, VDS=25V, - 100 150 Output capacitance C oss f=1MHz - 8.2 12.3 Reverse transfer capacitance C rss - 3.2 4.8 Turn-on delay time td(on) VDD=300V, VGS =10V, - 7.7 11.6 Rise time tr ID=0.13A, RG =6Ω - 14.4 21 Turn-off delay time td(off) - 20 30 Fall time tf - 110 165 - 0.27 0.3 - 2.3 3.5 - 4.4 6.6 V(plateau) VDD =400V, ID =0.13A - 3.44 - V IS - - 0.12 A - - 0.48 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =400V, ID =0.13A VDD =400V, ID =0.13A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=0.12A - 0.8 1.2 V Reverse recovery time trr VR=300V, IF=lS, - 156 235 ns Reverse recovery charge Qrr diF/dt=100A/µs - 165 250 nC Page 3 2003-02-26 Rev. 1.0 BSP125 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V 1.9 BSP125 0.13 BSP125 A W 0.11 1.6 0.1 1.4 1.2 ID Ptot 0.09 0.08 0.07 1 0.06 0.8 0.05 0.6 0.04 0.03 0.4 0.02 0.2 0 0 0.01 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 parameter : D = tp /T 10 160 °C TA 1 BSP125 10 2 A BSP125 K/W 10 1 ID t = 270.0µs p /ID 10 -1 = R V Z thJC 10 0 1 ms DS 10 0 D = 0.50 ) (on DS 10 ms 0.20 0.10 10 -2 0.05 10 -1 0.02 single pulse 0.01 DC 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 4 2003-02-26 Rev. 1.0 BSP125 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 100 10V 6.0V A 5.0V 4.0V 3.8V 3.6V 3.2V 0.2 3.0V 2.8V 2.6V 2.6V 2.8V 3.0V 3.2V 3.6V 4.0V 5.0V 6.0V 10V Ω R DS(on) ID 0.3 60 0.15 40 0.1 20 0.05 0 0 1 2 3 4 5 6 7 8 V 0 0 10 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 VDS A 0.5 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.5 0.4 S A gfs ID 0.3 0.3 0.25 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 0.1 0.2 0.3 A 0.5 ID VGS Page 5 2003-02-26 Rev. 1.0 BSP125 9 Drain-source on-state resistance (.) Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.12 A, VGS = 10 V parameter: VGS = VDS ; ID =94µA 170 BSP125 2.8 Ω Ω 98% 2 VGS(th) RDS(on) 140 120 100 1.6 typ. 80 1.2 60 2% 98% 0.8 40 typ 0.4 20 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 0 pF BSP125 A 10 -1 C IF 10 2 10 1 10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 8 16 24 32 40 52 V VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-02-26 Rev. 1.0 BSP125 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , ID = 0.12 A pulsed, Tj = 25 °C V(BR)DSS = f (Tj ) 16 BSP125 BSP125 720 V V(BR)DSS V VGS 12 10 0.2 VDS max 8 680 660 640 0.5 VDS max 620 6 0.8 VDS max 600 4 580 2 0 0 560 1 2 3 4 5 nC 6.5 QG 540 -60 -20 20 60 100 °C 180 Tj Page 7 2003-02-26 Rev. 1.0 BSP125 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-02-26